HY8N70T / HY8N70FT 700V / 8A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=1.2W@VGS=10V, ID=4.0A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives 1 1 2 Mechanical Information 3 • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Marking & Ordering Information 2 3 2 Drain 3 Source 1 TYPE MARKING PACKAGE PACKING HY8N70T 8N70T TO-220AB 50PCS/TUBE HY8N70FT 8N70FT ITO-220AB 50PCS/TUBE Gate Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol HY8N70T HY8N70FT Units Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS +30 V Continuous Drain Current TC=25℃ Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=7A, VDD=95V, L=15.5mH Operating Junction and Storage Temperature Range ID 8 8 A IDM 32 32 A PD 156 1.25 50 0.4 W EAS 500 mJ TJ, TSTG -55 to +150 ℃ Note : 1. Maximum DC current limited by the package Thermal Characteristics Parameter Symbol HY8N70T HY8N70FT Units Junction-to-Case Thermal Resistance RqJC 0.8 2.5 ℃/W Junction-to-Case Thermal Resistance RqJA 50 110 ℃/W COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV 1.0, 25-Sept-2012 PAGE.1 HY8N70T / HY8N70FT Electrical Characteristics ( TC=25℃, Unless otherwise noted ) Paramter Symbol Test Condition Min. Typ. Max. Units Drain-Source Breakdown Voltage BVDSS VGS=0V、ID=250uA 700 - - V Gate Threshold Voltage VGS(th) VDS=VGS、ID=250uA 2.0 - 4.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V、ID=4.0A - 0.95 1.2 W Zero Gate Voltage Drain Current IDSS VDS=700V、VGS=0V - - 10 uA Gate Body Leakage Current IGSS VGS=+30V、VDS=0V - - +100 nA - 32.6 38 - 6.2 - Static Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 7.6 - Turn-On Delay Time td(on) - 28.8 34 - 42.6 52 - 56.2 62 - 24.6 28 - 1250 - - 210 - - 3.5 - Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=560V，ID=8A VGS=10V VDD=350V，ID=8A VGS=10V，RG=25W VDS=25V，VGS=0V f=1.0MHZ nC ns pF Source-Drain Diode Max. Diode Forwad Voltage IS - - - 8.0 A Max. Pulsed Source Current ISM - - - 32 A Diode Forward Voltage VSD IS=5A、VGS=0V - - 1.4 V Reverse Recovery Time trr - 355 - ns Reverse Recovery Charge Qrr VGS=0V、IS=8A di/dt=100A/us - 3.6 - uC NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2% REV 1.0, 25-Sept-2012 PAGE.2 HY8N70T / HY8N70FT Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 100 VGS= 20V~ 8.0V 14 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 16 7.0V 12 10 8 6.0V 6 4 5.0V 2 0 VDS =50V 10 1 -55oC 0.1 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 50 1 Fig.1 Output Characteristric 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 5 RDS(ON) - On Resistance(W) RDS(ON) - On Resistance(W) 2 Fig.2 Transfer Characteristric 3 2.5 2 1.5 VGS=10V 1 VGS = 20V 0.5 ID =4.0A 4 3 2 1 0 0 0 2 4 6 8 4 10 5 ID - Drain Current (A) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.3 On-Resistance vs Drain Current Fig.4 On-Resistance vs Gate to Source Voltage 2500 12 f = 1MHz VGS = 0V 2000 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 25oC TJ = 125oC 1500 Ciss 1000 500 Coss Crss 0 ID =8.0A VDS=400V 10 VDS=250V 8 VDS=100V 6 4 2 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV 1.0, 25-Sept-2012 30 0 5 10 15 20 25 30 35 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE.3 HY8N70T / HY8N70FT Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 1.2 VGS =10 V ID =4.0A BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 2.5 2 1.5 1 0.5 ID = 250mA 1.1 1 0.9 0.8 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) TJ - Junction Temperature (oC) Fig.7 On-Resistance vs Junction Temperature Fig.8 Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 1.4 Fig.9 Body Diode Forward Voltage Characteristic REV 1.0, 25-Sept-2012 PAGE.4