ETC 5962-9314001HPC

90 V/1.0 Ω, Hermetically Sealed,
Power MOSFET Optocoupler
Technical Data
HSSR-7110
HSSR-7111
HSSR-7112
5962-9314001
5962-9314002
Features
Applications
• Dual Marked with Device
Part Number and DSCC
Standard Microcircuit
Drawing
• ac/dc Signal & Power
Switching
• Compact Solid-State
Bidirectional Switch
• Manufactured and Tested on
a MIL-PRF-38534 Certified
Line
• QML-38534
• MIL-PRF-38534 Class H
• Space Level Processing
Available
• Hermetically Sealed 8-Pin
Dual In-Line Package
• Small Size and Weight
• Performance Guaranteed
over -55°C to +125°C
• Connection A
0.8 A, 1.0 Ω
• Connection B
1.6 A, 0.25 Ω
• 1500 Vdc Withstand Test
Voltage
• High Transient Immunity
• 5 Amp Output Surge Current
• Military and Space
• High Reliability Systems
• Standard 28 Vdc and 48 Vdc
Load Driver
• Standard 24 Vac Load Driver
• Aircraft Controls
• ac/dc Electromechanical and
Solid State Relay
Replacement
• I/O Modules
• Harsh Industrial
Environments
constructed in eight-pin,
hermetic, dual-in-line, ceramic
packages. The devices operate
exactly like a solid-state relay.
The products are capable of
operation and storage over the
full military temperature range
and may be purchased as a
standard product (HSSR-7110),
with full MIL-PRF-38534 Class H
testing (HSSR-7111 and HSSR7112), or from the DSCC
Standard Microcircuit Drawing
(SMD) 5962-93140.
These devices may be purchased
with a variety of lead bend and
plating options. See Selection
Guide Table for details. Standard
Microcircuit (SMD) parts are
available for each lead style.
Description
The HSSR-7110, HSSR-7111,
HSSR-7112 and SMD 596293140 are single channel power
MOSFET optocouplers,
Functional Diagrams
CONNECTION B
DC CONNECTION
CONNECTION A
AC/DC CONNECTION
IO
IO
1 NC
8
1 NC
+
8
IF
IF
+ 2
7
VF
+ 2
VO
– 3
4 NC
6
5
VF
– 3
–
7
4 NC
6
+
VO
–
TRUTH TABLE
INPUT
OUTPUT
H
CLOSED
L
OPEN
5
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component
to prevent damage and/or degradation which may be induced by ESD.
2
All devices are manufactured and
tested on a MIL-PRF-38534 certified line and are included in the
DSCC Qualified Manufacturers
List, QML-38534 for Hybrid
Microcircuits. Each device
contains an AlGaAs light emitting
diode optically coupled to a
photovoltaic diode stack which
drives two discrete power
MOSFETs. The device operates
as a solid-state replacement for
single-pole, normally open,
(1 Form A) relays used for
general purpose switching of
signals and loads in high
reliability applications.
The devices feature logic level
input control and very low output
on-resistance, making them
suitable for both ac and dc loads.
Connection A, as shown in the
Functional Diagram, allows the
device to switch either ac or dc
loads. Connection B, with the
polarity and pin configuration as
shown, allows the device to
Selection Guide–Package Styles and Lead
Configuration Options
Agilent Part # and Options
Commercial
MIL-PRF-38534 Class H
Standard Lead Finish
Solder Dipped
Butt Joint/Gold Plate
Gull Wing/Soldered
Crew Cut/Gold Plate
SMD Part #
Prescript for all below
Either Gold or Soldered
Gold Plate
Solder Dipped
Butt Joint/Gold Plate
Butt Joint/Soldered
Gull Wing/Soldered
Crew Cut/Gold Plate
Crew Cut/Soldered
HSSR-7110
HSSR-7111
Gold
Option #200
Option #100
Option #300
Option #600
59629314001HPX
9314001HPC
9314001HPA
9314001HYC
9314001HYA
9314001HXA
9314001HZC
9314001HZA
HSSR-7112
Gold
Option -200
Option -100
Option -300
8-pin DIP Through Hole
The devices are convenient
replacements for mechanical and
solid state relays where high
component reliability with
standard footprint lead configuration is desirable. Devices may
be purchased with a variety of
lead bend and plating options.
See Selection Guide table for
details. Standard Microcircuit
Drawing (SMD) parts are
available for each package and
lead style.
The HSSR-7110, HSSR-7111,
HSSR-7112 and SMD 596293140 are designed to switch
loads on 28 Vdc power systems.
They meet 80 V surge and ± 600
V spike requirements.
59629314002HPX
9314002HPC
9314002HPA
9314002HYC
9314002HYA
9314002HXA
9.40 (0.370)
9.91 (0.390)
0.76 (0.030)
1.27 (0.050)
Outline Drawing
switch dc loads only. The
advantage of Connection B is that
the on-resistance is significantly
reduced, and the output current
capability increases by a factor of
two.
8.13 (0.320)
MAX.
7.16 (0.282)
7.57 (0.298)
4.32 (0.170)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
3.81 (0.150)
MIN.
0.51 (0.020)
MAX.
NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
0.20 (0.008)
0.33 (0.013)
7.36 (0.290)
7.87 (0.310)
3
Device Marking
Agilent DESIGNATOR
Agilent P/N
DSCC SMD*
DSCC SMD*
PIN ONE/
ESD IDENT
A QYYWWZ
XXXXXX
XXXXXXX
XXX XXX
50434
COMPLIANCE INDICATOR,*
DATE CODE, SUFFIX (IF NEEDED)
COUNTRY OF MFR.
Agilent CAGE CODE*
* QUALIFIED PARTS ONLY
Absolute Maximum Ratings
Storage Temperature Range ........................................ -65°C to +150°C
Operating Ambient Temperature – TA .......................... -55°C to +125°C
Junction Temperature – TJ ......................................................... +150°C
Operating Case Temperature – TC ......................................... +145°C [1]
Lead Solder Temperature ............................................... 260°C for 10 s
(1.6 mm below seating plane)
Average Input Current – IF ........................................................... 20 mA
Peak Repetitive Input Current – IFPK ............................................ 40 mA
(Pulse Width < 100 ms; duty cycle < 50%)
Peak Surge Input Current – IFPK surge ....................................... 100 mA
(Pulse Width < 0.2 ms; duty cycle < 0.1%)
Reverse Input Voltage – VR ............................................................... 5 V
Average Output Current – Figure 2
Connection A – IO ....................................................................... 0.8 A
Connection B – IO ...................................................................... 1.6 A
Single Shot Output Current – Figure 3
Connection A – IOPK surge (Pulse width < 10 ms) ...................... 5.0 A
Connection B – IOPK surge (Pulse width < 10 ms) ................... 10.0 A
Output Voltage
Connection A – VO ...................................................... -90 V to +90 V
Connection B – VO .......................................................... 0 V to +90 V
Average Output Power Dissipation – Figure 4 ....................... 800 mW[2]
Thermal Resistance
Maximum Output MOSFET Junction to Case – θJC = 15°C/W
ESD Classification
(MIL-STD-883, Method 3015) .......................................... (∆∆ ), Class 2
Recommended Operating Conditions
Parameter
Symbol
Min.
Max.
Units
Input Current (on)
IF(ON)
5
20
mA
Input Voltage (off)
VF(OFF)
0
0.6
V
TA
-55
+125
°C
IF(ON)
10
20
mA
Operating Temperature
Input Current (on)
– reference note 10
– reference note 11
4
Hermetic Optocoupler Options
Option
100
Description
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option
is available on commercial and hi-rel product.
4.32 (0.170)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
1.14 (0.045)
1.40 (0.055)
0.20 (0.008)
0.33 (0.013)
0.51 (0.020)
MAX.
7.36 (0.290)
7.87 (0.310)
200
Lead finish is solder dipped rather than gold plated. This option is available on commercial and
hi-rel product. DSCC Drawing part numbers contain provisions for lead finish.
300
Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This
option is available on commercial and hi-rel product. This option has solder dipped leads.
4.57 (0.180)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
600
1.40 (0.055)
1.65 (0.065)
5° MAX.
0.51 (0.020)
MAX.
4.57 (0.180)
MAX.
0.20 (0.008)
0.33 (0.013)
9.65 (0.380)
9.91 (0.390)
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option
is available on commercial and hi-rel product.
3.81 (0.150)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
Note: Dimensions in millimeters (inches).
0.20 (0.008)
0.33 (0.013)
1.02 (0.040)
TYP.
7.36 (0.290)
7.87 (0.310)
5
Electrical Specifications
TA =-55°C to +125°C, unless otherwise specified. See note 9.
Parameter
Output Withstand
Voltage
Output On-Resistance
Connection A
Sym.
Group
A, Subgroup
|VO(OFF)|
1, 2, 3
VF = 0.6 V, IO = 10 µA
R(ON)
1, 2, 3
IF = 10 mA, IO = 800 mA,
(pulse duration ≤ 30 ms
IF = 5 mA, IO = 800 mA,
(pulse duration ≤ 30 ms
0.40
IF = 10 mA, IO = 1.6 A,
(pulse duration ≤ 30 ms)
IF = 5 mA, IO = 1.6 A,
(pulse duration ≤ 30 ms)
0.12
10-4
10
µA
8
1.24
1.7
V
9
Connection B
Output Leakage
Current
Input Forward
Voltage
Test Conditions
IO(OFF)
1, 2, 3
VF = 0.6 V, VO = 90 V,
VF
1, 2, 3
IF = 10 mA
Min. Typ.* Max. Units
90
1.0
110
1.0
Fig.
V
5
Ω
6,7
VR
1, 2, 3
Input-Output
Insulation
II-O
1
Turn On Time
tON
IR = 100 µA
3, 10
0.25
3, 11
0.25
3, 10
tOFF
11
10
5.0
V
RH ≤ 45%, t = 5 s,
VI-O = 1500 Vdc,
TA = 25°C
9, 10, 11 IF = 10 mA, VDD = 28 V,
IO = 800 mA
1.25
IF = 5 mA, VDD = 28 V,
IO = 800 mA
Turn Off Time
3, 11
1.0
IF = 5 mA
Input Reverse
Breakdown Voltage
Notes
1.0
µA
6.0
ms
4, 5
1,10,
11, 12,
13
6.0
9,10,11 IF = 10 mA,
VDD = 28 V, IO = 800 mA
0.02
IF = 5 mA, VDD = 28 V,
IO = 800 mA
0.25
10
ms
1,10,
14,15
0.25
11
10
Output Transient
Rejection
dVo
dt
9
VPEAK = 50 V,
CM = 1000 pF,
CL = 15 pF, R M ≥ 1 MΩ
1000
V/µs
17
Input-Output
Transient Rejection
dVio
dt
9
VDD = 5 V,
VI–O(PEAK) = 50 V,
RL = 20 kΩ, CL = 15 pF
500
V/µs
18
*All typical values are at TA = 25°C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specified.
11
6
Typical Characteristics
All typical values are at TA = 25°C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specified.
Parameter
Output Off-Capacitance
Output Offset Voltage
Input Diode Temperature
Coefficient
Input Capacitance
Input-Output Capacitance
Input-Output Resistance
Symbol
CO(OFF)
|VOS|
∆VF/∆TA
Test Conditions
VO = 28 V, f = 1 MHz
IF = 10 mA, IO = 0 mA
IF = 10 mA
Typ.
145
2
-1.4
Units
pF
µV
mV/C
CIN
CI-O
RI-O
VF = 0 V, f = 1 MHz
VI-O = 0 V, f = 1 MHz
VI-O = 500 V, t = 60 s
20
1.5
1013
pF
pF
Ω
tON
IFPK = 100 mA,
IFSS = 10 mA
VDD = 28 V, IO = 800 mA
0.22
ms
Turn On Time
With Peaking
Fig.
16
19
Notes
7
8
4
4
1
6
Notes:
1. Maximum junction to case thermal resistance for the device is 15°C/W, where case temperature, TC, is measured at the center of the
package bottom.
2. For rating, see Figure 4. The output power PO rating curve is obtained when the part is handling the maximum average output
current IO as shown in Figure 2.
3. During the pulsed RON measurement (IO duration <30 ms), ambient (TA) and case temperature (T C) are equal.
4. Device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together.
5. This is a momentary withstand test, not an operating condition.
6. For a faster turn-on time, the optional peaking circuit shown in Figure 1 may be implemented.
7. VOS is a function of IF , and is defined between pins 5 and 8, with pin 5 as the reference. VOS must be measured in a stable ambient
(free of temperature gradients).
8. Zero-bias capacitance measured between the LED anode and cathode.
9. Standard parts receive 100% testing at 25°C (Subgroups 1 and 9). SMD and class H parts receive 100% testing at 25°C, 125°C and
-55°C (Subgroups 1 and 9, 2 and 10, 3 and 11 respectively).
10. Applies to HSSR-7112 and 5962-9314002Hxx devices only.
11. Applies to HSSR-7110, HSSR-7111 and 5962-9314001Hxx devices only.
CAUTION: Maximum Switching Frequency – Care should be taken during repetitive switching of
loads so as not to exceed the maximum output current, maximum output power dissipation,
maximum case temperature, and maximum junction temperature.
HSSR-7110
VCC (+5V)
1
8
+ 2
VF
– 3
7
6
4
5
IF
R2
1200 Ω
R1
330 Ω
R3
C
15 µF
IN
1/4 54ACTOO
1/4 54ACTOO*
R1 = REQUIRED CURRENT LIMITING RESISTOR
FOR I
F (ON) = 10 mA.
R2 = PULL-UP RESISTOR FOR VF (OFF) < 600 mV;
IF (V
CC - VOH) < 600 mV, OMIT R2.
R3, C = OPTIONAL PEAKING CIRCUIT.
TYPICAL VALUES
* USE SECOND GATE IF IF (PK) > 50 mA
REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V CC
Figure 1. Recommended Input Circuit.
R3
(Ω)
–
330
100
33
IF (PK)
(mA)
HSSR-7110
tON (ms)
10 (NO PK)
20
40
100
2.0
1.0
0.48
0.22
0.8
0.6
0.4
CONNECTION – A
0.2 IF 10 mA
θCA = 40° C/W
θCA = 80° C/W
-25
5
35
65
95
125 155
IF
11
10
9
CONNECTION–B
8
7
6
5
CONNECTION–A
4
3
10
200
Figure 2. Maximum Average Output
Current Rating vs. Ambient
Temperature.
600
800
1000
NORMALIZED TYPICAL
OUTPUT RESISTANCE
1.06
1.04
1.02
1.00
0.98
0.96
30 ms)
1.2
1.0
0.8
5
35
65
95
0.6
-55
125
Figure 5. Normalized Typical Output
Withstand Voltage vs. Temperature.
CONNECTION A
VF = 0.6 V
VO = 90 V
10-9
-10
10
-11
10
20
35
65
95
TA – TEMPERATURE – °C
Figure 8. Typical Output Leakage
Current vs. Temperature.
125
5
35
65
95
125
Figure 6. Normalized Typical Output
Resistance vs. Temperature.
IF – INPUT FORWARD CURRENT – A
10-7
-25
TA – AMBIENT TEMPERATURE – °C
TA – AMBIENT TEMPERATURE – °C
10-8
0.4
0.2
CONNECTION – A
IF 10 mA
θCA = 40° C/W
θCA = 80° C/W
0
-55 -25
5
35
65
95
125 155
0.8
CONNECTION – A
IF 10 mA
1.6 I = 800 mA
O
(PULSE DURATION
1.4
0.94
-25
0.6
Figure 4. Output Power Rating vs.
Ambient Temperature.
1.8
VF = 0.6 V
1.08 I = 10 µA
O
0.92
-55
0.8
TA – AMBIENT TEMPERATURE – °C
Figure 3. Single Shot (non-repetitive)
Output Current vs. Pulse Duration.
1.10
NORMALIZED TYPICAL OUTPUT
WITHSTAND VOLTAGE
400
1.0
PULSE DURATION – ms
TA – AMBIENT TEMPERATURE – °C
IO(OFF) – OUTPUT LEAKAGE CURRENT – A
10 mA
IO – OUTPUT CURRENT – A
0
-55
12
IOPK SURGE – OUTPUT CURRENT – A
IO – OUTPUT CURRENT – A
1.0
PO – OUTPUT POWER DISSIPATION – W
7
10-1
10-2
10-3
TA = 125°C
-4
10
TA = 25°C
10-5
TA = -55°C
10-6
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF – INPUT FORWARD VOLTAGE – V
Figure 9. Typical Input Forward
Current vs. Input Forward Voltage.
CONNECTION – A
0.6 IO 10 mA
IO (PULSE DURATION
30 ms)
0.4
0.2
0
TA = 125°C
-0.2
TA = 25°C
-0.4
TA = -55°C
-0.6
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
VO – OUTPUT VOLTAGE – V
Figure 7. Typical On State Output I-V
Characteristics.
8
VDD
50%
PULSE GEN.
ZO = 50 Ω
tf = tr = 5 ns
50%
IF
RL
HSSR-7110
P.W. = 15 ms
1
8
+ 2
VF
– 3
7
6
4
5
VO
MONITOR NODE
IF
VO
90%
CL = 25 pF
(CL INCLUDES PROBE AND
FIXTURE CAPACITANCE)
IF
MONITOR
10%
R (MONITOR)
200 Ω
tON
tOFF
GND
GND
Figure 10. Switching Test Circuit for tON, tOFF.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-55
-25
5
35
65
95
2.6
2.2
1.4
1.0
0.6
5
15
14.4
14.2
14.0
13.8
13.6
13.4
-25
5
35
65
95
1.0
0.8
0.6
0.4
0
20
0
10 20
Figure 13. Typical Turn On Time vs.
Voltage.
125
TA – TEMPERATURE – °C
Figure 14. Typical Turn Off Time vs.
Temperature.
CONNECTION A
VDD = 28 V
IO = 800 mA
TA = 25°C
40
35
30
25
20
15
10
5
5
10
15
IF – INPUT CURRENT – mA
Figure 15. Typical Turn Off Time vs.
Input Current.
30 40 50 60 70 80 90
VDD – VOLTAGE – V
45
CONNECTION A
IF = 10 mA
VDD = 28 V
IO = 800 mA
TOFF – TURN OFF TIME – µs
TOFF – TURN OFF TIME – µs
10
Figure 12. Typical Turn On Time vs.
Input Current.
15.0
13.2
-55
1.2
IF – INPUT CURRENT – mA
Figure 11. Typical Turn On Time vs.
Temperature.
14.6
1.6
1.4
0.2
TA – TEMPERATURE – °C
14.8
CONNECTION - A
IF = 10 mA
IO = 800 mA
TA = 25°C
1.8
1.8
0.2
125
CONNECTION A
VDD = 28 V
IO = 800 mA
TA = 25°C
20
CO(OFF) – OUTPUT OFF CAPACITANCE – pF
2.2
TON – TURN ON TIME – ms
TON – TURN ON TIME – ms
2.4
2.0
3.0
CONNECTION A
IF = 10 mA
VDD = 28 V
IO = 800 mA
TON – TURN ON TIME – ms
2.6
440
CONNECTION A
f = 1 MHz
TA = 25°C
400
360
320
280
240
200
160
120
0
5
10
15
20
25
VO(OFF) – OUTPUT VOLTAGE – V
Figure 16. Typical Output Off
Capacitance vs. Output Voltage.
30
9
HSSR-7110
1
8
+ 2
VF
– 3
7
6
4
5
VM
MONITOR
NODE
IF
INPUT OPEN
CM
+
RM
VPEAK
–
PULSE
GENERATOR
CM INCLUDES PROBE AND FIXTURE CAPACITANCE
RM INCLUDES PROBE AND FIXTURE RESISTANCE
90%
90%
VPEAK
10%
10%
tr
VM (MAX)
tf
5V
(0.8) V(PEAK)
dVO (0.8) V(PEAK)
=
OR
tr
tf
dt
OVERSHOOT ON VPEAK IS TO BE
Figure 17. Output Transient Rejection Test Circuit.
10%.
10
VDD
HSSR-7110
RL
VO
1
8
+ 2
VF
– 3
7
CL
6
(CL INCLUDES PROBE PLUS
FIXTURE CAPACITANCE )
4
5
IF
S1
A
B
VIN
VI-O
+
–
PULSE
GENERATOR
90%
90%
VI-O(PEAK)
10%
10%
tf
tr
VO(OFF)
S1 AT A (VF = 0 V)
VO(OFF) (min)
3.25 V
VO(ON) (max)
VO(ON)
S1 AT B (IF = 10 mA)11 OR (IF = 5 mA)10
(0.8) VI-O(PEAK)
dVI-O (0.8) VI-O(PEAK)
=
OR
tf
dt
tr
OVERSHOOT ON VI-O(PEAK) IS TO BE
10%
Figure 18. Input-Output Transient Rejection Test Circuit.
ISOTHERMAL CHAMBER
HSSR-7110
IF
1
8 +
+ 2
7
– 3
6
4
VOS
5 –
Figure 19. Voltage Offset Test Setup.
DIGITAL
NANOVOLTMETER
0.8
11
HSSR-7110
1
8
2
7
3
6
4
5
ROUT
VO (SEE NOTE)
1.0 Ω
VIN
RIN
200 Ω
5.5 V
ROUT
1.0 Ω
NOTE:
IN ORDER TO DETERMINE VOUT CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST
BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING θCA, DETERMINE THE
CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE
DERATING REQUIREMENTS AS SHOWN.
Figure 20. Burn-In Circuit.
Tje
Tjd
Tjf1
104
15
Tjf2
15
15
TC
θCA
TA
Tje = LED JUNCTION TEMPERATURE
Tjf1 = FET 1 JUNCTION TEMPERATURE
Tjf2 = FET 2 JUNCTION TEMPERATURE
Tjd = FET DRIVER JUNCTION TEMPERATURE
TC = CASE TEMPERATURE (MEASURED AT CENTER
OF PACKAGE BOTTOM)
TA = AMBIENT TEMPERATURE (MEASURED 6" AWAY
FROM THE PACKAGE)
θCA = CASE-TO-AMBIENT THERMAL RESISTANCE
ALL THERMAL RESISTANCE VALUES ARE IN °C/W
Figure 21. Thermal Model.
Applications Information
Thermal Model
The steady state thermal model
for the HSSR-7110 is shown in
Figure 21. The thermal resistance
values given in this model can be
used to calculate the temperatures
at each node for a given operating
condition. The thermal resistances
between the LED and other
internal nodes are very large in
comparison with the other terms
and are omitted for simplicity.
The components do, however,
interact indirectly through θCA,
the case-to-ambient thermal
resistance. All heat generated
flows through θCA, which raises
the case temperature TC accordingly. The value of θCA depends on
the conditions of the board design
and is, therefore, determined by
the designer.
The maximum value for each output MOSFET junction-to-case
thermal resistance is specified as
15°C/W. The thermal resistance
from FET driver junction-to-case
is also 15°C/W. The power
dissipation in the FET driver,
however, is negligible in comparison to the MOSFETs.
On-Resistance and Rating
Curves
The output on-resistance, RON,
specified in this data sheet, is the
resistance measured across the
output contact when a pulsed
current signal (IO = 800 mA) is
applied to the output pins. The use
of a pulsed signal (≤ 30 ms)
implies that each junction
temperature is equal to the ambient
and case temperatures. The steadystate resistance, RSS, on the other
hand, is the value of the resistance
measured across the output contact
when a DC current signal is applied
to the output pins for a duration
sufficient to reach thermal
equilibrium. RSS includes the effects
of the temperature rise of each
element in the thermal model.
Rating curves are shown in Figures
2 and 4. Figure 2 specifies the
maximum average output current
allowable for a given ambient
temperature. Figure 4 specifies the
output power dissipation allowable
for a given ambient temperature.
Above 55°C (for θCA = 80°C/W) and
107°C (for θCA = 40°C/W), the
maximum allowable output current
and power dissipation are related
by the expression RSS = PO (max)/
(IO(max))2 from which RSS can be
calculated. Staying within the safe
area assures that the steady-state
junction temperatures remain less
than 150°C. As an example, for TA
= 95°C and θCA = 80°C/W, Figure 2
shows that the output current
should be limited to less than
610 mA. A check with Figure 4
shows that the output power
dissipation at TA = 95°C and IO =
610 mA, will be limited to less
than 0.35 W. This yields an RSS of
0.94 Ω.
Design Considerations
for Replacement of
Electro-Mechanical
Relays
The HSSR-7110 family can
replace electro-mechanical relays
with comparable output voltage
and current ratings. The following
design issues need to be considered in the replacement circuit.
Input Circuit: The drive circuit
of the electro-mechanical relay
coil needs to be modified so that
the average forward current
driving the LED of the HSSR7110 does not exceed 20 mA. A
nominal forward drive current of
10 mA is recommended. A
recommended drive circuit with 5
volt VCC and CMOS logic gates is
shown in Figure 1. If higher VCC
voltages are used, adjust the
current limiting resistor to a
nominal LED forward current of
10 mA. One important consideration to note is that when the LED
is turned off, no more than 0.6
volt forward bias should be
applied across the LED. Even a
few microamps of current may be
sufficient to turn on the HSSR7110, although it may take a
considerable time. The drive
circuit should maintain at least 5
mA of LED current during the ON
condition. If the LED forward
current is less than the 5 mA
level, it will cause the HSSR-7110
to turn on with a longer delay. In
addition, the power dissipation in
the output power MOSFETs
increases, which, in turn, may
violate the power dissipation
guidelines and affect the
reliability of the device.
Output Circuit: Unlike electromechanical relays, the designer
should pay careful attention to the
output on-resistance of solid state
relays. The previous section, ”OnResistance and Rating Curves”
describes the issues that need to
be considered. In addition, for
strictly dc applications the
designer has an advantage using
Connection B which has twice the
output current rating as Connection A. Furthermore, for dc-only
applications, with Connection B
the on-resistance is considerably
less when compared to
Connection A.
MIL-PRF-38534 Class H
and DSCC SMD Test
Program
Agilent Technologies’ Hi-Rel
Optocouplers are in compliance
with MIL-PRF-38534 Class H.
Class H devices are also in
compliance with DSCC drawing
5962-93140.
Testing consists of 100% screening and quality conformance
inspection to MIL-PRF-38534.
Output over-voltage protection is
yet another important design
consideration when replacing
electro-mechanical relays with the
HSSR-7110. The output power
MOSFETs can be protected using
Metal oxide varistors (MOVs) or
TransZorbs against voltage surges
that exceed the 90 volt output
withstand voltage rating.
Examples of sources of voltage
surges are inductive load kickbacks, lightning strikes, and
electro-static voltages that exceed
the specifications on this data
sheet. For more information on
output load and protection refer
to Application Note 1047.
References:
1. Application Note 1047, ”Low
On-Resistance Solid State
Relays for High Reliability
Applications.”
2. Reliability Data for HSSR-7110.
MOV is a registered trademark of GE/RCA
Solid State.
TransZorb is a registered trademark of
General Semiconductor.
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
November 20, 2001
Obsoletes 5968-9399E (2/00)
5988-4451EN