FDP7030BLS / FDB7030BLS 30V N-Channel PowerTrench SyncFET ™ General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode. • 56 A, 30 V. RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 16.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (15nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability D D G G D S G S TO-220 TO-263AB FDP Series Absolute Maximum Ratings Symbol FDB Series T A =25 oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS ID Gate-Source Voltage Drain Current – Continuous – Pulsed Ratings Units 30 V ±20 V (Note 1) 56 (Note 1) 160 PD Total Power Dissipation @ TC = 25°C TJ, TSTG Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Derate above 25°C TL S A 65 W 0.43 W/°C –65 to +100 °C 275 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 2.3 °C/W 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB7030BLS FDB7030BLS 13’’ 24mm 800 units FDP7030BLS FDP7030BLS Tube n/a 45 2001 Fairchild Semiconductor Corporation FDP7030BLS Rev B(W) FDP7030BLS/FDB7030BLS May 2001 Symbol Parameter T A = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate–Body Leakage, Forward VGS = 20 V, IGSSR Gate–Body Leakage, Reverse VGS = –20 V ID = 1 mA On Characteristics ID = 1 mA 30 V 22 mV/°C 500 µA VDS = 0 V 100 nA VDS = 0 V –100 nA 3 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 1 mA, Referenced to 25°C 1 2.3 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 28 A 47 S VDS = 15 V, f = 1.0 MHz VGS = 0 V, 1708 pF 474 pF 134 pF –4.4 VGS = 10 V, ID = 28 A VGS = 4.5 V, ID = 23 A VGS=10 V, ID = 28A, TJ = 100°C 8.6 13.2 12.4 mV/°C 10.5 16.5 16.5 50 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 11 21 ns 8 16 ns Turn–Off Delay Time 30 48 ns tf Turn–Off Fall Time 16 29 ns Qg Total Gate Charge 15 21 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 10 V, VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 28 A 7 nC 5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 11.5A, diF/dt = 300 A/µs (Note 1) 0.44 0.60 20 (Note 2) 20 (Note 1) 3.5 A 0.7 V ns nC Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. FDP7030BLS Rev B(W) FDP7030BLS/FDB7030BLS Electrical Characteristics FDP7030BLS/FDB7030BLS Typical Characteristics 120 6.0V 5.0V 90 ID, DRAIN CURRENT (A) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 VGS = 10V 4.5V 60 4.0V 30 0 VGS = 4.5V 1.8 1.6 5.0V 1.4 6.0V 7.0V 1.2 8.0V 0.8 0 1 2 3 4 5 0 20 40 VDS, DRAIN-SOURCE VOLTAGE (V) 60 80 100 120 I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.04 1.4 I D = 28A VGS =10V RDS(ON) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 1 1.2 1 0.8 0.6 I D = 14A 0.03 o TA = 100 C 0.02 o TA = 25 C 0.01 -50 -25 0 25 50 75 100 2 4 6 8 10 o T J, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 o TA = 55 C VD S = 5V IS, REVERSE DRAIN CURRENT (A) 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. o 25 C 50 ID, DRAIN CURRENT (A) o 100 C 40 30 20 10 VGS = 0V o TA = 100 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP7030BLS Rev B(W) (continued) 2500 f = 1MHz VGS = 0 V VDS = 5V ID = 28A 10V 2000 8 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 C ISS 1500 1000 COSS 2 500 0 0 C RSS 0 5 10 15 20 25 0 30 5 Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 1000 100 P(pk), PEAK TRANSIENT POWER (W) 5000 10ms 100m 1s R DS(ON) LIMIT 10s 50s 10 DC V GS = 10V SINGLE PULSE o RθJA = 2.3 C/W o TA = 25 C 1 0.1 1 10 VD S, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE R θJA = 2.3°C/W T A = 25°C 4000 3000 2000 1000 0 0.001 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I D, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA (t) = r(t) + R θJA R θJA = 2.3 °C/W 0.2 0.1 0.1 0.05 P(pk 0.02 t1 0.01 t2 TJ - T A = P * R θJA (t) Duty Cycle, D = t 1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. FDP7030BLS Rev B(W) FDP7030BLS/FDB7030BLS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP7030BLS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Time: 10ns/div IDSS, REVERSE LEAKAGE CURRENT (A) Current: 0.8A/div 0.1 o T A = 100 C 0.01 0.001 o TA = 25 C 0.0001 0.00001 0 Figure 12. FDP7030BLS SyncFET body diode reverse recovery characteristic. 10 20 30 V DS, REVERSE VOLTAGE (V) For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP7030BL). Current: 0.8A/div Figure 13. Non-SyncFET (FDP7030BL) body diode reverse recovery characteristic. Time: 10ns/div FDP7030BLS Rev B(W) FDP7030BLS/FDB7030BLS Typical Characteristics TO-220 Tube Packing Data TO-220 Tube Packing Configuration: Figur e 1.0 Packaging Description: TO-220 parts are ship ped normally in tube. The tube is made of PVC plastic treated with anti -stati c agent.These tubes in standard option are placed inside a dissipative plastic bag, barcode labeled, and placed inside a box made of recyclable corrugated pa per. One box contains two ba gs maximum (see fig. 1.0). And one or several o f these boxes are placed inside a labeled shipp ing bo x whic h c omes in different sizes dependi ng on the nu mber of parts ship ped. The other option comes in bulk as described in the Packagin g Information table. The unit s in this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually labeled and placed ins ide a larger box (see fig. 3.0). These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. 45 unit s per Tube 12 Tubes per Bag 530mm x 130mm x 83mm Intermediate box 2 bags per Box Conduct ive Plasti c B ag TO-220 Packaging Information: Figure 2.0 FSCINT Labe l samp le FAIRCHILD SEMICONDUCTOR CORPORATION TO-220 Packaging Information Packaging Option Packaging type Qty per Tube/Box NSID: Standard CBVK741B019 QTY: FDP7060 HTB:B 1080 SPEC: S62Z (no f l ow code ) Rail/Tube BULK 45 300 D/C1: D9842 SPEC REV: B2 QA REV: 530x130x83 114x102x51 Max qty per Box 1,080 1,500 Weight per unit (gm) 1.4378 1.4378 Box Dimension (mm) LOT: 1080 uni ts maxi mum quant it y per box FSCINT Label (FSCINT) Note/Comments TO-220 bulk Packing Configuration: Figure 3.0 An ti-stati c Bubbl e Sheet s FSCINT Label 530mm x 130mm x 83mm Intermediate box 1500 uni ts maxi mum quant it y per intermediate box 300 units per EO70 box 5 EO70 boxe s per per Interm ediate Bo x 114mm x 102mm x 51mm EO70 Immediate Box FSCINT Label TO-220 Tube Configuration: Figure 4.0 0.123 +0.001 -0.003 0.165 0.080 Note: All dim ensions are in inches F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L 0.275 0.450 ±.030 F 9852 NDP4060L 1.300 ±.015 0.032 ±.003 20.000 +0.031 -0.065 ©2000 Fairchild Semiconductor International 0.160 0.800 0.275 August 1999, Rev. B TO-220 Package Dimensions TO-220 (FS PKG Code 37) 1:1 Scale 1:1 on letter size paper Dimensions shown bel ow are in: inches [millimeters] Part Weight per unit (gram): 1.4378 ©2000 Fairchild Semiconductor International September 1998, Rev. A TO-263AB/D2PAK Tape and Reel Data TO-263AB/D2PAK Packaging Configuration: Figure 1.0 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Packaging Description: TO-263/D2PAK parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 800 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table. Embossed ESD Marking TION NS ATTEE NPRECAUTIO G Antistatic Cover Tape RV HANDLIN OBSEFO R OSTATIC ELECTRNSITIVE SE ES DEVIC These full reels are individually barcode labeled, dry packed, and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains one reel maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. CAUTION Static Dissipative Embossed Carrier Tape Moisture Sensitive Label F63TNR Label F9835 FDB603AL F9835 FDB603AL F9835 FDB603AL Customized Label F9835 FDB603AL TO-263AB/D2PAK Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no flow code) TNR Rail/Tube 800 45 L86Z 13" Dia - 346x346x70 530x130x83 800 1,080 Weight per unit (gm) 1.4378 1.4378 Weight per Reel 1.6050 - Max qty per Box TO-263AB/D2PAK Unit Orientation 346mm x 346mm x 70mm Standard Intermediate box ESD Label Note/Comments Moisture Sensitive Label F63TNR Label sample F63TNR Label LOT: CBVK741B019 QTY: 800 FSID: FDB6320L SPEC: D/C1: D9842AB D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F DRYPACK Bag (F63TNR)3 TO-263AB/D2PAK Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 400mm minimum or 25 empty pockets ©2001 Fairchild Semiconductor Corpooration Leader Tape 1520mm minimum or 95 empty pockets January 2001, Rev. C TO-263AB/D2PAK Tape and Reel Data, continued TO-263AB/D2PAK Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 TO263AB/ D2PAK (24mm) 10.60 +/-0.10 16.70 +/-0.20 W 24.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 F 22.25 min 11.50 +/-0.10 P1 P0 16.0 +/-0.1 4.0 +/-0.1 K0 T 4.90 +/-0.10 0.450 +/-0.150 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 10 deg maximum Typical component cavity center line B0 21.0 +/-0.3 Tc 0.5mm maximum 10 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation 2PAK TO-263AB/D Figure 4.0 Sketch C (Top View) Component lateral movement Sketch B (Top View) Reel Configuration: Component Rotation W1 Measured at Hub Dim A Max B Min Dim C Dim A max Dim D min Dim N DETAIL AA See detail AA W3 13" Diameter Option W2 max Measured at Hub Dimensions are in inches and millimeters Tape Size 24mm Reel Option 13" Dia Dim A Dim B 13.00 330 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 Dim N 4.00 100 Dim W1 0.961 +0.078/-0.000 24.4 +2/0 Dim W2 1.197 30.4 Dim W3 (LSL-USL) 0.941 – 0.1.079 23.9 – 27.4 January 2001, Rev. C TO-263AB/D2PAK Package Dimensions TO-263AB/D2PAK (FS PKG Code 45) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 ©2000 Fairchild Semiconductor International August 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2