ETC HHS88T1608L

HMS88T1608L/16L
HMS88T1608L/16L
8-BIT CMOS MCU BASED SAFEGUARDED SMARTCARD IC
WITH 8176/16384 BYTES EEPROM
FEATURES
• Extended voltage Operation
- VCC Range: 2.7V ~ 5.5V
• 8 Bit Architecture CPU
HMS88T1608L/16L
• 16K Bytes User ROM, Sector Combinative
VCC
C1
C5
GND
• 384 Bytes RAM
RST
C2
C6
RFU
/VPP
• 8176/16384 Bytes EEPROM, Sector Combinative:
CLK
C3
C7
IO1
IO2
C4
C8
RFU
• 2.7K Bytes System ROM
- Highly Reliable CMOS EEPROM Technology
- 10 Years Data Retention
- 300,000 Erase/Write Cycles Endurance
- Protected One Time Programmable Block
(32 or 64 Bytes)
- 1 to 32 Bytes Block Erase or Write in a Single
Cycle Programming
(OPTION)
Figure 1. Pin Configuration
VCC
Supply Voltage
• Serial Access, ISO 7816-3 Compatible
RST
Reset
• Standby Mode for Power Saving
CLK
Clock
• Up to 5 MHz Internal Operating Frequency
RFU
Reserved for future
• Very High Security Features Including EEPROM flash erase
GND
Ground
I/O1
Data Input/Output
I/O2
Data Input/Output(Option)
• Contact Assignment Compatible ISO7816-2
• ESD Protection Greater than 5,000V
• 2 Operating Configurations
Table 2. Contact Format
- Issuer
- User
• Meets GSM 11.11 and 11.12 Specifications
MAY 2001
1/2
2001 Hynix Semiconductor Inc. All right reserved.
HMS88T1608L/16L
INTRODUCTION
The HMS88T1608L/16L, a member of the standard
HMS88T16XYZ family, are a serial access microcontrollers especially designed for very large volume and
cost competitive smart cards applications.
The HMS88T1608L/16L are based on an 8 bit CPU
core and include on chip memories: 384 bytes RAM,
16K bytes ROM, 8176/16384 bytes EEPROM structured in two main sectors to be used in different combinations, as described below.
As all the other HMS88T16XYZ family members, the
HMS88T1608L/16L are fully compatible with the ISO
standards for smart card applications.
The HMS88T1608L/16L can be delivered as:
either in sawn or un-sawn 6inch wafers, 180 micron
thickness as well as in micromodule package.
Reliability data related to the HMS88T1608L/16L
products manufactured using Hynix 0.7µm CMOS
EEPROM technology guarantees data retention up to
10 years and endurance up to 300,000 erase/write
cycles.
VPP GENERATION
8 BIT CPU
SYSTEM U S E R R O M
ROM
16K BYTES
RAM
384 BYTES
2.7K BYTES
Sector S ector
A
B
EEPROM 8176/16384 BYTES
SECTOR COMBINATIVE
S ector
S ector
A
B
MEMORY ACCESS CONTROL MATRIX
INTERNAL BUS
SERIAL I/O’s
INTERFACE
I/O 1
RANDOM NUMBER
GENERATOR
SECURITY LOGIC
I/O 2
CLK
RST
VCC
GND
Figure 3. HMS88T1608L/16L Block Diagram
2/2
MAY 2001
2001 Hynix Semiconductor Inc. All right reserved.