ETC 1999SHORTFORMCAT

1999 SHORT FORM CATALOG
ADVANCED POWER
TECHNOLOGY
MIL-PRF-19500
ISO9001 Certified
POWER
DISCRETE SEMICONDUCTORS
TECHNOLOGY TO THE NEXT POWER.
1
Advanced Power Technology
Technology .... Beginning in 1984 with the introduction of Power MOS IV®, APT has
maintained a position at the forefront of power semiconductor technology. Our focus is on
the high voltage, high power and high performance segments of this market. Our
commitment is to maintain and enhance this position as a technological leader in MOS
controlled devices and FREDs and to deliver products which contribute to our customers’
success in delivering higher performance power systems.
Service .... Outstanding technology is only part of the story. A global network of stocking
distributors, representatives and applications engineers are in place to support all phases
of your product design, evaluation and procurement activities. In a world which demands
superior execution, we’ve won awards as a service leader.
Quality .... Our commitment is to excellence in all things we do. Whether you are evaluating
the quality of our products, our technical assistance, our customer service or the quality of
our internal communications systems, excellence is our standard. We understand that
ISO9001, MIL-PRF-19500 and 8D are only the beginning.
What’s New
•
•
•
•
•
•
•
•
Power MOS V® MOSFETs and FREDFETs
Thunderbolt IGBT™ .... Capable of replacing MOSFETs up to 150kHz Operation
Fast IGBT .... for up to 40kHz Operation
Center-Tap FREDs .... 200V - 1000V
High Frequency FREDs .... Replacement for GaAs Rectifiers
New Packages .... Tape and reel D3 PAK, T-MAX™ and TO-267
RF MOSFETs .... Operation up to 100MHz
Expanded Hermetic Product Offering
2
Table of Contents
4-5
FAST RECOVERY
EPITAXIAL DIODES
(FREDs)
14-16
6-11
HERMETIC PACKAGED
PRODUCTS
17-19
LOW GATE CHARGE
POWER MOS IV®
MOSFETs
12
CUSTOM PRODUCTS
19
RF MOSFETS
13
SALES OFFICES
IGBT
NEW GENERATION
POWER MOS V®
MOSFETs & FREDFETs
Back Cover
Packaging Information
Package
Quantity Per Tube
TO-247
T-MAX™
TO-220
ISOTOP®
TO-3
TO-264
D3 PAK
30 UNITS
30 UNITS
50 UNITS
10 UNITS
21 UNITS
25 UNITS
30 UNITS
D3 PAK T/R
400/REEL
Visit APT’s Website to Download Datasheets
http://www.advancedpower.com
3
IGBT Technology
Easy Paralleling .... A positive temperature
coefficient of VCE(SAT) makes paralleling of NPT IGBTs
as easy as with MOSFETs.
NPT Technology .... Non-Punch-Through IGBTs
are manufactured by fabricating the MOSFET
structure on the surface of a lightly doped,
n-substrate. No epi layer needs to be grown on the
substrate. The wafer is thinned to 100µm after all
high temperature processes are completed to reduce
the n-drift region. The pn junction required on the
back of the wafer is formed using a p+ implant and
a light diffusion. Making the p+ region only a few
µm thick keeps the voltage drop low in this region
and controllable within very tight tolerances
throughout the wafer. This construction provides
an optimal tradeoff between VCE(SAT), switching
speed and ruggedness. At full rated current, the
VCE(SAT) may be higher than PT technologies, but
under normal operating currents the difference is
negligible.
Tighter Electrical Parameters Distribution.... NPT
technology has fewer and more easily controlled
processing steps than with PT technologies. The end
user can expect less lot-to-lot variation of electrical
parameters than is possible with PT devices.
Low Leakage Current .... No lifetime control is used
in producing NPT IGBTs, eliminating the major cause
of leakage current in alternative technologies.
NPT Technology
vs
PT Technology
Faster Switching .... Faster turn-off speeds and
lower tail currents are key advantages of NPT
technology. This is primarily due to the generation
of fewer minority carriers during operation in NPT
devices.
MOS Structure
PASSIVATION
AL SOURCE
OXIDE
PASSIVATION
METAL
AL SOURCE
DIELECTRIC
POLY
OXIDE
EMITTER
n+
p
p+
n-
METAL
DIELECTRIC
POLY
EMITTER
n+
p
p+
n-
n- Substrate
Improved High Temperature Operation .... The
turn-off speed and tail current of an NPT IGBT is
not as temperature dependent as PT devices. These
parameters remain relatively constant over the
entire operating temperature range, resulting in
approximately 50% less dynamic losses at high
temperatures.
n- epi Layer
n++ epi Layer
p+ Collector
p++ Substrate/
Collector
Thickness: NPT=100µm
PT=400µm
Improved Ruggedness .... NPT technology IGBTs
are avalanche energy, SCSOA and RBSOA rated.
Thunderbolt IGBT™ Family .... Designated
by the “GT” in the part number, these devices
are designed for operation up to 150kHz hard
switching and 300kHz in resonant
applications.
Fast IGBT Family .... Designated by the “GF”
in the part number, these devices are designed
for operation up to 40kHz in hard switching applications.
4
NPT IGBT
BVCES
Volts
Max
VCE(ON)
Volts
IC1
(25°C)
Amps
IC2
Amps
PD
Watts
Part
Number
Package
Fast
1200
3.0
3.2
22
32
11
20
125
200
APT11GF120KR
APT20GF120KR
Thunderbolt
DISCRETE (IGBT ONLY)
600
2.5
2.5
2.5
2.5
2.5
17
25
31
40
58
8
12
15
20
30
70
125
135
175
250
APT8GT60KR
APT12GT60KR
APT15GT60KR
APT20GT60KR
APT30GT60KR
TO-220
*TO-220[K]
TO-220
Fast
TO-247
1200
600
600
3.2
3.2
2.5
2.5
2.5
2.5
2.5
2.5
2.7
2.5
32
52
25
31
40
58
80
116
75**
90
20
33
12
15
20
30
40
60
50
60
200
300
125
135
175
250
350
500
300
375
APT20GF120BR
APT33GF120BR
APT12GT60BR
APT15GT60BR
APT20GT60BR
APT30GT60BR
APT40GT60BR
APT60GT60BR
APT50GF60BR
APT60GT60JR
1200
600
3.4
2.7
80
100**
50
100
390
390
APT50GF120B2R
APT100GF60B2R
T-MAX™
1200
600
3.4
2.7
80
100**
50
100
390
390
APT50GF120LR
APT100GF60LR
TO-264
11
20
125
200
APT11GF120BRD
APT20GF120BRD
Fast
Thunderbolt
600
TO-247
*TO-247[B]
ISOTOP®
TO-264
*TO-264[L]
Fast
COMBI (IGBT + FRED)
Fast
Thunderbolt
1200
3.0
3.2
22
32
T-Max
TO-247
600
2.5
2.5
3.2
2.7
3.2
2.7
30
55
52
80
52
80
15
30
33
50
33
50
125
200
300
300
300
300
APT15GT60BRD
APT30GT60BRD
APT33GF120B2RD
APT50GF60B2RD
APT33GF120LRD
APT50GF60LRD
600
3.4
3.4
3.4
2.7
60
75
100
140
40
50
60
100
390
460
520
390
APT40GF120JRD
APT50GF120JRD
APT60GF120JRD
APT100GF60JRD
600
2.5
90
60
375
APT60GT60JRD
1200
600
1200
600
1200
** IC1 limited by package
5
*T-MAX™[B2]
T-MAX™
TO-264
E
E
G
ISOTOP®
27
2
T-
C
SO
*ISOTOP®[J]
*Not to Scale
Power MOS V® MOSFETs
Avalanche Energy Rated .... All Power MOS V®
devices are 100% tested and guaranteed for avalanche
energy.
A new generation of high power, high voltage
Power MOSFETs .... Based on a patented self aligned
interdigitated open cell structure, this new generation
of MOSFETs offers many advantages over our
previous MOS IV® generation and over industry
standard, closed cell devices.
Low Leakage Current .... Process improvements
have made possible a substantial decrease over our
previous generation. Maximum values for most
products are now specified at 25µA at 25°C and
250µA at 125°C.
Lower RDS(ON) .... A 25% reduction in on-resistance
is gained by employing shallower junctions and
“overactive area” bonding to increase the channel
packing density per unit of silicon. The packing
density has been optimized to minimize the JFET
resistance and capacitances.
Rugged Gate .... Improvements in gate oxide
processing allow for specification of a high gate
rupture voltage. All Power MOS V® MOSFETs are
specified for ± 30V continuous operation and ± 40V
transient operation.
Faster Switching .... Power MOS V® utilizes a low
resistance aluminum metal gate structure. This allows
for faster gate signal propagation than is possible with
conventional polysilicon gate structures. Power MOS
V® employs shorter gate fingers and a more efficient
gate bus structure than our previous generation to
further reduce the series gate resistance. Multiple
bond pads and wires for both source and gate contacts
have also reduced impedances. The result is
decreased on, rise, delay and fall times. Total
switching time has been reduced by up to 60% over
our previous generation.
Lower Cost .... A less complex fabrication process,
improved manufacturing yields and reduced cycle
times have all contributed to a more cost-effective
device.
Comparison of Lowest RDS(ON) in TO-247 Package Between New Generation Power MOS V®
and Previous Generation Power MOS IV®
Breakdown
Voltage (V)
New Generation
Power MOS V®
RDS(ON) (mΩ)
Previous Generation
Power MOS IV®
RDS(ON) (mΩ)
Improvement
1200
1000
800
600
500
400
300
200
100
1500
860
560
250
150
120
70
38
19
--1000
750
300
200
160
85
45
25
New
14%
25%
17%
25%
25%
18%
16%
24%
6
POWER MOS V® MOSFETs
1234567890
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1234567890
1234567890
1234567890
1234567890
BVDSS
RDS(ON)
ID(Cont.)
PD
Ciss(pF)
EAS
APT
1234567890
1234567890
1234567890
Volts
Ohms
Amps
Watts
Typ
mJ
Part No.
1234567890
1234567890
1234567890
1200
1.600
8
280
3050
1210
APT1201R6BVR
1234567890
1234567890
1234567890
1.500
10
370
3700
1300
APT1201R5BVR
1234567890
1234567890
1234567890
1234567890
1000
1.000
11
280
3050
1210
APT1001RBVR
1234567890
1234567890
1234567890
0.860
13
370
3700
1300
APT10086BVR
1234567890
1234567890
1234567890
800
0.750
12
260
2700
960
APT8075BVR
1234567890
1234567890
1234567890
1234567890
0.650
13
280
3050
1210
APT8065BVR
1234567890
1234567890
1234567890
0.560
16
370
3700
1300
APT8056BVR
1234567890
1234567890
1234567890
1234567890
600
0.450
15
250
2600
960
APT6045BVR
1234567890
1234567890
1234567890
0.350
18
280
3450
1210
APT6035BVR
1234567890
1234567890
1234567890
0.300
21
300
3750
1300
APT6030BVR
1234567890
1234567890
1234567890
0.250
25
370
4300
1300
APT6025BVR
1234567890
1234567890
1234567890
500
0.280
20
250
2650
960
APT5028BVR
1234567890
1234567890
1234567890
0.240
22
280
3600
1210
APT5024BVR
1234567890
1234567890
1234567890
0.200
26
300
3700
1300
APT5020BVR
1234567890
1234567890
1234567890
0.170
30
370
4400
1300
APT5017BVR
1234567890
1234567890
1234567890
0.150
32
370
4400
1300
APT5015BVR
1234567890
1234567890
1234567890
400
0.200
23
250
2650
960
APT4020BVR
1234567890
1234567890
1234567890
0.160
27
280
3350
1210
APT4016BVR
1234567890
1234567890
1234567890
0.140
28
300
3600
1300
APT4014BVR
1234567890
1234567890
1234567890
0.120
37
370
4500
1300
APT4012BVR
1234567890
1234567890
1234567890
300
0.085
40
300
4100
1300
APT30M85BVR
1234567890
1234567890
1234567890
1234567890
0.070
48
370
4890
1300
APT30M70BVR
1234567890
1234567890
1234567890
200
0.045
56
300
4050
1300
APT20M45BVR
1234567890
1234567890
1234567890
1234567890
0.040
59
300
4050
1300
APT20M40BVR
1234567890
1234567890
1234567890
0.038
67
370
5100
1300
APT20M38BVR
1234567890
1234567890
1234567890
100
0.025
75 **
300
4300
1500
APT10M25BVR
1234567890
1234567890
1234567890
1234567890
0.019
75 **
370
5100
1500
APT10M19BVR
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
Any devices1234567890
offered in the TO-264 package can be made available in the T-MAX™.
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
See page 191234567890
for details.
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
1234567890
1234567890
1234567890
1000
0.500
21
520
6600
2500
APT10050B2VR
1234567890
1234567890
1234567890
800
0.300
27
520
6600
2500
APT8030B2VR
1234567890
1234567890
1234567890
600
0.150
38
520
7500
2500
APT6015B2VR
1234567890
1234567890
1234567890
1234567890
500
0.140
37
450
5600
1600
APT5014B2VR
1234567890
1234567890
1234567890
0.100
47
520
7400
2500
APT5010B2VR
1234567890
1234567890
1234567890
1234567890
200
0.022
100**
520
8500
2500
APT20M22B2VR
1234567890
1234567890
1234567890
100
0.011
100**
520
8600
2500
APT10M11B2VR
1234567890
1234567890
** IDmax limited by package
7
Package
Style
TO-247
*TO-247[B]
T-Max
*T-MAX™ [B2]
*Not to Scale
POWER MOS V® MOSFETs
BVDSS
Volts
1200
1000
800
600
500
400
300
200
100
1200
1000
800
600
500
400
300
200
100
123456789
123456789
123456789
123456789
123456789
123456789
RDS(ON)
123456789
123456789
123456789
Ohms
123456789
123456789
123456789
0.800
123456789
123456789
123456789
123456789
0.500
123456789
123456789
123456789
123456789
0.300
123456789
123456789
123456789
123456789
0.200
123456789
123456789
123456789
123456789
0.150
123456789
123456789
123456789
123456789
0.140
123456789
123456789
123456789
123456789
0.100
123456789
123456789
123456789
123456789
0.070
123456789
123456789
123456789
123456789
0.040
123456789
123456789
123456789
123456789
0.022
123456789
123456789
123456789
123456789
0.011
123456789
123456789
123456789
123456789
123456789
123456789
123456789
0.800
123456789
123456789
123456789
0.400
123456789
123456789
123456789
0.500
123456789
123456789
123456789
0.430
123456789
123456789
123456789
0.250
123456789
123456789
123456789
123456789
0.300
123456789
123456789
123456789
0.280
123456789
123456789
123456789
0.150
123456789
123456789
123456789
0.150
123456789
123456789
123456789
0.130
123456789
123456789
123456789
0.075
123456789
123456789
123456789
0.100
123456789
123456789
123456789
0.085
123456789
123456789
123456789
123456789
0.050
123456789
123456789
123456789
0.070
123456789
123456789
123456789
0.035
123456789
123456789
123456789
0.040
123456789
123456789
123456789
0.019
123456789
123456789
123456789
0.022
123456789
123456789
123456789
0.019
123456789
123456789
123456789
0.011
123456789
123456789
123456789
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0.011
123456789
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0.007
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ID(Cont.)
Amps
PD
Watts
Ciss(pF)
Typ
EAS
mJ
APT
Part No.
16
520
6500
2500
APT12080LVR
21
520
6600
2500
APT10050LVR
27
520
6600
2500
APT8030LVR
30
450
5600
1600
APT6020LVR
38
520
7500
2500
APT6015LVR
37
450
5600
1600
APT5014LVR
47
520
7400
2500
APT5010LVR
57
520
7410
2500
APT40M70LVR
76
520
8500
2500
APT30M40LVR
100**
520
8500
2500
APT20M22LVR
100 **
520
8600
2500
APT10M11LVR
15
450
6500
2500
APT12080JVR
26
700
15000
3600
APT12040JVR
19
450
6600
2500
APT10050JVR
22
500
7500
1300
APT10043JVR
34
700
15000
3600
APT10025JVR
25
450
6600
2500
APT8030JVR
28
500
7700
1300
APT8028JVR
44
700
14715
3600
APT8015JVR
35
450
7500
2500
APT6015JVR
40
500
8800
1300
APT6013JVR
62
700
16500
3600
APT60M75JVR
44
450
7400
2500
APT5010JVR
50
500
9000
1300
APT50M85JVR
77
700
16800
3600
APT50M50JVR
53
450
7410
2500
APT40M70JVR
93
700
16000
3600
APT40M35JVR
70
450
8500
2500
APT30M40JVR
130
700
18000
3600
APT30M19JVR
97
450
8500
2500
APT20M22JVR
112
500
9700
1300
APT20M19JVR
175
700
18000
3600
APT20M11JVR
144
450
8600
2500
APT10M11JVR
225
700
18000
3600
APT10M07JVR
8
Package
Style
TO-264
*TO-264[L]
S
S
G
27
2
T-
D
SO
*ISOTOP®[J]
(ISOLATED BASE)
*Not to Scale
POWER MOS V® MOSFETs
1234567890
1234567890
1234567890
1234567890
BVDSS
RDS(ON)
ID(Cont.)
PD
Ciss(pF)
EAS
APT
1234567890
1234567890
1234567890
Volts
Ohms
Amps
Watts
Typ
mJ
Part No.
12345678901234567890123456789012123456789012345678901234567890121234567890123456789
1234567890
12345678901234567890123456789012123456789012345678901234567890121234567890123456789
1234567890
12345678901234567890123456789012123456789012345678901234567890121234567890123456789
1234567890
12345678901234567890123456789012123456789012345678901234567890121234567890123456789
Any devices1234567890
offered in the TO-247 package can be made available in D3 PAK. See page 19 for details.
12345678901234567890123456789012123456789012345678901234567890121234567890123456789
1234567890
12345678901234567890123456789012123456789012345678901234567890121234567890123456789
1234567890
12345678901234567890123456789012123456789012345678901234567890121234567890123456789
1234567890
1234567890
1234567890
1000
1.000
11
280
3050
1210
APT1001RSVR
1234567890
1234567890
1234567890
1234567890
0.860
13
370
3700
1300
APT10086SVR
1234567890
1234567890
1234567890
1234567890
800
0.650
13
280
3050
1210
APT8065SVR
1234567890
1234567890
1234567890
1234567890
600
0.450
15
250
2600
960
APT6045SVR
1234567890
1234567890
1234567890
1234567890
0.350
18
280
3450
1210
APT6035SVR
1234567890
1234567890
1234567890
500
0.280
20
250
2650
960
APT5028SVR
1234567890
1234567890
1234567890
1234567890
0.200
26
300
3700
1300
APT5020SVR
1234567890
1234567890
1234567890
1234567890
0.170
30
370
4400
1300
APT5017SVR
1234567890
1234567890
1234567890
1234567890
200
0.045
56
300
4050
1300
APT20M45SVR
1234567890
1234567890
1234567890
1234567890
0.038
67
370
5100
1300
APT20M38SVR
1234567890
1234567890
1234567890
100
0.025
75 **
300
4150
1500
APT10M25SVR
1234567890
1234567890
1234567890
1234567890
0.019
75 **
370
5100
1500
APT10M19SVR
1234567890
1234567890
1234567890
1234567890
Package
Style
D3PAK
*D3 PAK[S]
POWER MOS V® MOSFET/FRED “COMBI” PRODUCTS
POWER FACTOR CORRECTION “BOOST” CONFIGURATION
500
0.100
44
450
7410
2500
APT5010JVRU2
4
3
2
MOTOR DRIVE “BUCK” CONFIGURATION
500
0.100
44
450
7
22
1
OT
S
7410
2500
APT5010JVRU3
*ISOTOP®[J]
(ISOLATED BASE)
“BOOST” CONFIGURATION
“BUCK” CONFIGURATION
• Reduced parts count vs discretes.
• Improved circuit performance due to reduced inductance.
** IDmax limited by package
9
*Not to Scale
Additional MOS V® Products
Preliminary Information
MOSFETs
BVDSS
Volts
RDS(ON) ID (Cont)
Ohms
Amps
600
500
500
200
100
600
500
500
200
100
0.110
0.085
0.080
0.018
0.009
0.100
0.085
0.080
0.018
0.009
PD Ciss(pF)
Watts Typ
49
56
58
100**
100**
49
56
58
100**
100**
625
625
625
625
625
625
625
625
625
625
4100
6700
6700
7600
7600
4100
6700
6700
7600
7600
EAS
mJ
APT
Part Number
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
Samples
Available
APT6011B2VR
APT50M85B2VR
APT50M80B2VR
APT20M18B2VR
APT10M09B2VR
APT6011LVR
APT50M85LVR
APT50M80LVR
APT20M18LVR
APT10M09LVR
Sept 99
Aug 99
Aug 99
Sept 99
Sept 99
Sept 99
Aug 99
Aug 99
Sept 99
Sept 99
Package
Style
T-MAX™
TO-264
FREDFETs
BVDSS
Volts
RDS(ON)
Ohm
ID
(Cont)
Amps
800
600
600
500
500
200
100
600
500
200
100
0.750
0.250
0.110
0.085
0.080
0.018
0.009
0.110
0.085
0.018
0.009
12
25
49
56
58
100**
100**
49
56
100**
100**
Ciss
PD (pF)
Watts Typ
260
370
625
625
625
625
625
625
625
625
625
2700
4300
4100
6700
6700
7600
7600
4100
6700
7600
7600
trr
(nS)
Max
EAS
mJ
250
250
250
250
250
220
220
250
250
220
220
960
1300
3000
3000
3000
3000
3000
3000
3000
3000
3000
APT
Part Number
APT8075BVFR
APT6025BVFR
APT6011B2VFR
APT50M85B2VFR
APT50M80B2VFR
APT20M18B2VFR
APT10M09B2VFR
APT6011LVFR
APT50M85LVFR
APT20M18LVFR
APT10M09LVFR
Samples Package
Available Style
July 99
Now
Sept 99
Aug 99
Aug 99
Sept 99
Sept 99
Sept 99
Aug 99
Sept 99
Sept 99
TO-247
T-MAX™
TO-264
**ID(Cont) limited by package
TO-247
TO-247[B]
TO-264
T-Max
T-MAX™ [B2]
10
TO-264[L]
MOS V® FREDFETs
Applications for FREDFETs .... Power MOS V®
FREDFETs should be specified under the following
conditions:
FREDFET Technology .... Using a proprietary
platinum lifetime control process, the performance
of the intrinsic body drain diode of the Power MOS
V® MOSFET is improved.
• Whenever the intrinsic body drain diode of the
MOSFET is expected to carry forward current.
Examples are Half Bridge, H-Bridge and 3-Phase
Bridge circuit topologies.
Faster Intrinsic Diode Recovery .... The reverse
recovery time has been reduced to 250ns maximum,
eliminating the external FRED and Schottky rectifiers
in certain circuit configurations.
• In soft switched circuits, where the body diode
carries current. Examples are Phase Shift
Controlled H-Bridge or Resonant circuit
topologies.
Improved Ruggedness .... The ruggedness of the
intrinsic diode has also been improved, allowing for
a commutative dv/dt rating of 5V/ns.
Other Benefits .... The platinum process provides the
added advantages of soft recovery, lower leakage
current, lower recovery charge and more temperature
independent performance than alternative processes
used to improve intrinsic diode performance.
v
MOSFET vs FREDFET Intrinsic Diode trr
FREDFET
MOSFET
POWER MOS V® FREDFETs
BVDSS
RDS(ON)
ID(Cont.)
PD
Ciss(pF)
EAS
trr(nsecs)
APT
Volts
Ohms
Amps
Watts
Typ
mJ
Max
Part No.
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
Any devices offered in standard MOSFETs can be made available as FREDFETs . See page 19 for details.
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1000
800
500
300
200
100
1.100
0.860
0.650
0.560
0.240
0.200
0.170
0.085
0.070
0.045
0.038
0.025
0.019
11
13
13
16
22
26
30
40
48
56
67
75 **
75**
280
370
280
370
280
300
370
300
370
300
370
300
370
3050
3700
3050
3700
3600
3700
4400
4100
4890
4050
5100
4300
5100
1210
1300
1210
1300
1210
1300
1300
1300
1300
1300
1300
1500
1500
11
200
200
200
200
250
250
250
200
225
200
240
200
200
APT1001R1BVFR
APT10086BVFR
APT8065BVFR
APT8056BVFR
APT5024BVFR
APT5020BVFR
APT5017BVFR
APT30M85BVFR
APT30M70BVFR
APT20M45BVFR
APT20M38BVFR
APT10M25BVFR
APT10M19BVFR
Package
Style
TO-247
*TO-247[B]
*Not to Scale
POWER MOS V® FREDFETs
1234567890
1234567890
1234567890
1234567890
BVDSS
RDS(ON)
ID(Cont.)
PD
Ciss(pF)
EAS
trr(nsecs)
APT
Package
1234567890
1234567890
1234567890
Volts
Ohms
Amps
Watts
Typ
mJ
Max
Part
No.
Style
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901
1234567890
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901
1234567890
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901
1234567890
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901
1234567890
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901
1234567890
Any
devices
offered in the TO-264 package can also be made available in T-Max™. See page 19 for details.
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901
1234567890
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901
1234567890
1234567890123456789012345678901212345678901234567890123456789012123456789012345678901
1234567890
1234567890
T-Max
1234567890
1234567890
800
0.300
27
520
6600
2500
300
APT8030B2VFR
1234567890
1234567890
1234567890
1234567890
1234567890
1234567890
1234567890
500
0.100
47
520
7400
2500
250
APT5010B2VFR
1234567890
1234567890
1234567890
1234567890
1234567890
1234567890
*T-MAX™[B2]
1234567890
200
0.022
100 **
520
8500
2500
220
APT20M22B2VFR
1234567890
1234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
Any devices1234567890
offered in the TO-247 package can also be made available in D3 PAK See page 19 for details.
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
123456789012345678901234567890121234567890123456789012345678901212345678901234567890
1234567890
1234567890
D3PAK
1234567890
1234567890
1234567890
500
0.200
26
300
3700
1300
250
APT5020SVFR
1234567890
1234567890
1234567890
1234567890
1234567890
*D3 PAK[S]
200
0.045
56
300
4050
1300
200
APT20M45SVFR
1234567890
1234567890
1234567890
1234567890
1234567890
1000
0.500
21
520
6600
2500
300
APT10050LVFR
1234567890
1234567890
1234567890
1234567890
1234567890
1234567890
1234567890
800
0.300
27
520
6600
2500
300
APT8030LVFR
1234567890
1234567890
1234567890
1234567890
TO-264
1234567890
1234567890
1234567890
500
0.100
47
520
7400
2500
250
APT5010LVFR
1234567890
1234567890
1234567890
1234567890
1234567890
1234567890
1234567890
300
0.040
76
520
8500
2500
240
APT30M40LVFR
1234567890
1234567890
1234567890
1234567890
1234567890
1234567890
**
*TO-264[L]
1234567890
200
0.022
100
520
8500
2500
220
APT20M22LVFR
1234567890
1234567890
1234567890
1234567890
1234567890
1000
0.500
19
450
6600
2500
300
APT10050JVFR
1234567890
1234567890
1234567890
0.250
34
700
15000
3600
300
APT10025JVFR
1234567890
1234567890
1234567890
1234567890
1234567890
800
0.300
25
450
6600
2500
300
APT8030JVFR
1234567890
1234567890
1234567890
0.150
44
700
14715
3600
280
APT8015JVFR
S
1234567890
S
1234567890
1234567890
1234567890
1234567890
27
1234567890
D
-2
500
0.100
44
450
7400
2500
250
APT5010JVFR
G
1234567890
T
1234567890
SO
1234567890
0.085
50
500
9000
1300
300
APT50M85JVFR
1234567890
1234567890
1234567890
0.050
77
700
16300
3600
300
APT50M50JVFR
1234567890
1234567890
1234567890
1234567890
1234567890
300
0.040
70
450
8500
2500
240
APT30M40JVFR
1234567890
1234567890
1234567890
0.019
130
700
18000
3600
300
APT30M19JVFR
1234567890
1234567890
*ISOTOP®[J]
1234567890
1234567890
(ISOLATED BASE)
1234567890
1234567890
200
0.022
97
450
8500
2500
220
APT20M22JVFR
1234567890
1234567890
1234567890
0.011
175
700
18000
3600
250
APT20M11JVFR
1234567890
** IDmax limited by package
12
*Not to Scale
POWER MOS IV® MOSFETs
LOW GATE CHARGE - FAST SWITCHING FAMILY
BVDSS
Volts
RDS(ON)
Ohms
ID(Cont.)
Amps
PD
Watts
Ciss(pF)
Typ
Qg(nC)
Typ
APT
Part No.
1000
1.000
11.0
310
2460
90
APT1001RBN
1.100
10.5
310
2460
90
APT1001R1BN
1.600
8.0
240
1530
66
APT1001R6BN
2.000
7.0
240
1530
66
APT1002RBN
4.000
4.4
180
805
35
APT1004RBN
800
0.750
13.0
310
2410
88
APT8075BN
600
0.300
23.0
360
2905
140
APT6030BN
0.350
19.0
310
2400
87
APT6035BN
0.400
18.0
310
2400
87
APT6040BN
0.200
28.0
360
2890
140
APT5020BN
0.250
23.0
310
2380
83
APT5025BN
0.160
31.0
360
2850
130
APT4016BN
0.200
26.0
310
2380
94
APT4020BN
0.500
20.5
520
5425
235
APT10050JN
0.260
33.0
690
11610
465
APT10026JN
0.300
27.0
520
5780
245
APT8030JN
0.180
40.0
690
11715
468
APT8018JN
500
400
1000
800
Package
Style
TO-247
*TO-247[B]
G
600
500
400
1000
0.150
38.0
520
5540
242
APT6015JN
0.090
57.0
690
11670
446
APT60M90JN
0.100
48.0
520
5570
240
APT5010JN
0.060
71.0
690
11640
475
APT50M60JN
0.075
56.0
520
5630
241
APT40M75JN
0.042
86.0
690
11140
507
APT40M42JN
4.000
3.6
125
805
35
APT1004RKN
S
S
S
*ISOTOP®[J]
(ISOLATED BASE)
TO-220
800
2.400
4.7
125
790
38
APT802R4KN
*TO-220[K]
13
7
22
OT
D
*Not to Scale
RF MOSFETs
Why Higher Voltage .... Higher operating voltage
means higher load impedances. For 300W of RF
output at 50V, the load is less than 4 ohms. At 125V,
the load impedance is 25 ohms. The higher impedance
allows for fewer transformers and combiners. Parallel
devices can still operate into a reasonable and
convenient load impedance. Increasing the operating
voltage also lowers the current required for any given
power output, reducing the size and weight of other
components.
RF Technology.... APT RF MOSFETs are optimized
for high power Class C, D and E operation from 1100 MHz. The die geometry has been designed for
RF high power efficiency and low gate loss. The RF
MOSFETs are mounted on an isolation substrate to
create a TO-247 common source configuration. The
source is directly connected to the center pin and
heatsink tab; no external insulator is necessary. This
provides maximum thermal efficiency without the
added expense and assembly problems of drain
isolation. Internally, symmetric wire bonding
schemes insure that both pinout versions of each
device are perfect mirror image pairs. This
configuration allows for easy layout of push-pull and
parallel pairs for circuit board symmetry and
separation of input and output sections.
Lower Cost ....
• Inexpensive TO-247 plastic package
• No insulators required
• Maximum thermal efficiency. The internal BeO
insulator is more efficient than external insulators.
• Simplified board layout due to symmetric pairs
configuration
High Voltage Operation .... Historically, all RF
MOSFETs operated at a maximum of 50V. By
combining high voltage MOSFET technology with
specific RF die geometries, this limitation has been
removed. RF operation at up to 300V is now possible.
Note: The ARF446 through ARF449 devices are
based on the latest MOS V® RF technology and are
the preferred devices for all new designs. The ARF440
through ARF445 are based on Power MOS IV®
technology and are not recommended for new
designs.
RF MOSFETS - SYMMETRIC PAIRS
VDD
Volts
POUT
Watts
GPS
dB(typ)
°C/W
RθJC
Pin Out
APT
Part No.
50
125
125
21 @ 13.56 MHz
21 @ 13.56 MHz
0.75
0.75
Figure 1
Figure 2
ARF440
ARF441
100
200
200
22 @ 13.56 MHz
22 @ 13.56 MHz
0.75
0.75
Figure 1
Figure 2
ARF442
ARF443
300
300
300
18.7 @ 13.56 MHz
18.7 @ 13.56 MHz
0.60
0.60
Figure 1
Figure 2
ARF444
ARF445
250
250
250
15 @ 40.68 MHz
15 @ 40.68 MHz
0.55
0.55
Figure 1
Figure 2
ARF446
ARF447
150
250
250
15 @ 40.68 MHz
15 @ 40.68 MHz
0.55
0.55
Figure 1
Figure 2
ARF448A
ARF448B
150
150
150
13 @ 81.36 MHz
13 @ 81.36 MHz
0.76
0.76
Figure 1
Figure 2
ARF449A
ARF449B
150
500
13 @ 81.36 MHz
0.35
Figure 1
TO-247
Gate
Source
Drain
Figure 2
ARF450
14
TO-247
Drain
Source
Gate
*TO-247
COMMON SOURCE
*Not to Scale
FRED Technology
FRED Technology .... Our proprietary platinum
lifetime control process results in performance
advantages vs FREDs built with alternative
processes for lifetime control. Use of platinum
produces a “softer” and faster recovery with an
optimal trade-off between VF and trr.
Improved High Temperature Operation .... The
reverse recovery of silicon diodes degrades as
operating temperatures increase. The advantage
of using platinum for lifetime control is less
degradation of performance at high temperatures.
To assist the designer, trr is specified on all
datasheets under operating conditions; i.e., at Tj
= 125°C, maximum rated current and dI/dt and
80% rated voltage.
CENTER-TAP DUAL FREDS
VRMM
Volts
IF(AV)
Amps**
trr2(25°C)
nsec Typ
1000
15
30
60
60
trr3(100°C) VF(25°C)
nsec Typ
Volts
120
120
2.3
2.3
IRM(25°C)
µA
250
250
APT
Part No.
Package
Style
APT15D100BCT
APT30D100BCT
TO
-24
7
600
15
30
40
50
80
80
1.8
1.8
150
250
APT15D60BCT
APT30D60BCT
400
15
30
40
45
70
70
1.5
1.5
150
250
APT15D40BCT
APT30D40BCT
200
30
40
60
1.15
250
APT30D20BCT
1000
60
70
130
2.5
250
APT60D100LCT
1
2
3
*TO-247[BCT]
Common Cathode
TO
600
60
70
90
1.8
250
APT60D60LCT
400
60
70
90
1.5
250
APT60D40LCT
200
60
36
71
1.15
250
APT60D20LCT
-26
4
*TO-264[LCT]
Common Cathode
TO
TO
-24
7
1
-24
CONSULT FACTORY FOR THESE OR OTHER
PACKAGE CONFIGURATIONS
7
1
2
Common Anode
**All Ratings Are Per Leg
2
Half Bridge 3or Phase Leg
3
15
*Not to Scale
DISCRETE FREDS
VRMM
Volts
1200
1000
600
400
200
1000
IF(AV)
Amps
trr2(25°C)
nsec Typ
trr3(100°C) VF(25°C)
nsec Typ
Volts
IRM(25°C)
µA
APT
Part No.
30
60
30
60
15
30
60
30
60
30
60
70
70
60
70
40
50
70
45
40
40
36
160
130
120
130
80
80
90
70
65
60
71
2.5
2.5
2.3
2.5
1.8
1.8
1.8
1.5
1.5
1.15
1.15
250
250
250
250
150
250
250
250
250
250
250
APT30D120B
APT60D120B
APT30D100B
APT60D100B
APT15D60B
APT30D60B
APT60D60B
APT30D40B
APT60D40B
APT30D20B
APT60D20B
15
60
120
2.3
250
APT15D100K
Package
Style
TO-247
*TO-247[B]
TO
-22
0
600
15
40
80
1.8
150
APT15D60K
400
15
40
70
1.5
150
APT15D40K
300
15
35
60
1.4
150
APT15D30K
1200
30
60
100
70
70
130
160
130
215
2.5
2.5
2.5
250
250
250
APT2X30D120J
APT2X60D120J
APT2X100D120J
*TO-220[K]
2
K
2
1000
600
400
200
1200
1000
600
400
200
K2
A
A2
7 el
1
22 ll
K
TO - ara
S -P
i
nt A1
A
1
A
30
60
100
30
60
100
30
60
100
60
60
70
80
50
70
60
45
70
60
36
120
130
160
80
90
92
70
90
140
71
2.3
2.5
2.5
1.8
1.8
2.0
1.5
1.5
1.5
1.15
250
250
250
250
250
250
250
250
500
250
APT2X30D100J
K1
APT2X60D100J
APT2X100D100J
APT2X30D60J
*ISOTOP®[J]
APT2X60D60J
Antiparallel Configuration
APT2X100D60J
(ISOLATED BASE)
APT2X30D40J
APT2X60D40J
APT2X100D40J
APT2X60D20J
30
60
100
30
60
100
30
60
100
30
60
100
60
100
70
70
130
60
70
80
50
70
60
45
70
60
36
70
160
130
215
120
130
160
80
90
92
70
90
140
71
150
2.5
2.5
25
2.3
2.5
2.5
1.8
1.8
2.0
1.5
1.5
1.5
1.15
1.1
250
250
250
250
250
250
250
250
250
250
250
500
250
500
APT2X31D120J
APT2X61D120J
APT2X101D120J
APT2X31D100J
APT2X61D100J
APT2X101D100J
APT2X31D60J
APT2X61D60J
APT2X101D60J
APT2X31D40J
APT2X61D40J
APT2X101D40J
APT2X61D20J
APT2X101D20J
16
2
K
A
2
1
K2
K
K1
27 l
-2 le
A
OS T ral
a
P
1
A2
A1
*ISOTOP®[J]
Parallel Configuration
(ISOLATED BASE)
*Not to Scale
DISCRETE SURFACE MOUNT FREDS
VRMM
Volts
600
IF(AV)
Amps
30
trr2(25°C)
nsec Typ
trr3(100°C)
nsec Typ
50
80
VF(25°C)
Volts
1.8
IRM(25°C)
µA
250
APT
Part No.
Package
Style
APT30D60S
D3PAK
400
30
45
70
1.5
250
APT30D40S
200
30
40
60
1.15
250
APT30D20S
*D3 PAK[S]
Higher Frequency FREDs
Standard FRED[1]
vs
Higher Frequency FRED[2]
Extremely Fast Recovery .... These FREDs are
capable of replacing GaAs rectifiers in high
frequency applications up to 2 MHz, at a fraction
of the cost. By using two (2), much heavier
platinum doped 300V FREDs in series, a
considerable decrease in the reverse recovery time
is achieved vs standard 600V FREDs. This heavier
concentration of platinum produces a FRED that
is specifically designed for higher frequency
applications where reduction of switching losses
is most important and a higher VF specification can
be tolerated.
[2]
[1]
ULTRAFAST SOFT RECOVERY DIODE PRODUCTS
HIGHER FREQUENCY FREDS
VRMM
Volts
600
IF(AV)
Amps
30
trr2(25°C)
nsec Typ
20
trr3(100°C) VF(25°C)
nsec Typ
Volts
35
4.0
IRM(25°C)
µA
250
APT
Part No.
Package
Style
TO
APT30DS60B
-24
7
15
12.5
25
4.0
150
APT15DS60B
1
2
17
*TO-247[B]
*Not to Scale
HERMETIC MOSFET PRODUCTS
BVDSS
Volts
RDS(ON)
Ohms
ID(Cont.)
Amps
PD
Watts
Ciss(pF)
Typ
Qg(nC)
Typ
1000
4.000
3.3
100
805
35
APT
Part No.
APT1004RGN
Alternate
Package
Package
Style
SMD1
*TO-257[G]
(ISOLATED)
1000
2.000
5.5
150
1530
66
APT1002RCN
SMD2
4.000
3.6
125
805
35
APT1004RCN
SMD1
600
0.450
11.8
150
2600
115
APT6045CVR
SMD2
500
0.320
14.0
150
2650
110
APT5032CVR
SMD2
0.400
13.0
150
1430
71
APT5040CNR
SMD2
0.415
12.0
150
2410
103
2N7228/JX/JV
0.300
15.0
150
1500
71
APT4030CNR
0.315
14.0
150
2400
100
2N7227/JX/JV
0.88
11.0
250
3700
185
APT10088HVR
SMD3
1.10
9.0
200
3050
150
APT1001R1HVR
SMD2
0.58
13.5
250
3700
185
APT8058HVR
SMD3
0.67
11.5
200
3050
150
APT8067HVR
SMD2
0.27
20.0
250
4300
185
APT6027HVR
SMD3
0.37
15.5
200
3450
140
APT6037HVR
SMD2
0.19
24.0
250
4400
200
APT5019HVR
SMD3
0.26
18.5
200
3600
140
APT5026HVR
SMD2
0.14
28.0
250
4500
195
APT4014HVR
SMD3
0.18
22.0
200
3350
135
APT4018HVR
SMD2
0.040
45.0
250
5100
148
APT20M40HVR
SMD3
400
1000
800
600
500
400
200
SMD2
*TO-254[C]
(ISOLATED)
*TO-258[H]
(ISOLATED)
CONSULT FACTORY FOR INFORMATION ON FRED, FREDFET AND IGBTS IN ANY HERMETIC
PACKAGE.
18
*Not to Scale
HERMETIC MOSFET PRODUCTS
BVDSS
Volts
RDS(ON)
Ohms
ID(Cont.)
Amps
PD
Watts
Ciss(pF)
Typ
Qg(nC)
Typ
1000
1.10
9.0
200
3050
150
APT1001R1AVR
SMD2
800
0.65
11.5
200
3050
150
APT8065AVR
SMD2
600
0.32
17.5
235
3750
160
APT6032AVR
SMD3
0.35
16.0
200
3450
140
APT6035AVR
SMD2
0.22
21.0
235
3700
150
APT5022AVR
SMD3
0.24
18.5
200
3600
140
APT5024AVR
SMD2
0.30
14.7
155
2650
110
APT5030AVR
SMD2
400
0.15
25.5
235
3600
160
APT4015AVR
SMD3
300
0.090
33.0
235
4100
130
APT30M90AVR
SMD3
1000
0.57
17.3
450
6600
335
APT10057WVR
SMD4
600
0.17
31.5
450
7500
315
APT6017WVR
SMD4
500
0.12
40.0
450
7400
312
APT5012WVR
SMD4
400
0.082
44.0
450
7410
330
APT40M82WVR
SMD4
200
0.026
65.0**
450
8500
290
APT20M26WVR
SMD4
1000
0.250
33.0
625
15000
660
APT10025PVR
600
0.075
60.5
625
16500
700
APT60M75PVR
500
0.05
74.5
625
16300
690
APT50M50PVR
400
0.035
89.0
625
16000
700
APT40M35PVR
200
0.013
146.0
625
18000
630
APT20M13PVR
500
APT
Part No.
Alternate
Package
Package
Style
*TO-3[A]
(NON-ISOLATED)
*TO-267[W]
(ISOLATED)
*P-PACK
(ISOLATED)
CONSULT FACTORY FOR INFORMATION ON FRED, FREDFET AND IGBTS IN ANY HERMETIC
PACKAGE.
*SMD1
*SMD2
*SMD3
*SMD4
CONSULT FACTORY FOR INFORMATION ON SURFACE MOUNT PRODUCTS
** IDmax limited by package
19
*Not to Scale
Hermetic Products
APT is a MIL-PRF-19500 certified supplier and can provide TX, TXV and space level
processing. In addition to the MOSFETs shown in this catalog, other MOSFETs, FREDFETs,
IGBTs, FREDs, or combinations of these products can be provided in hermetic packages.
If you do not see the product you need, or if you have questions concerning processing
capabilities or certification levels, please contact your local representative or APT directly.
Custom, Value-Added Solutions To Meet Your
Specific Power Application Requirements
In addition to the broad line of leading edge products in this catalog, APT is dedicated to
providing innovative solutions for our customers. This means working with our customers
to solve their procurement, manufacturing or application problems. We are known as the
supplier that provides solutions that others cannot, or will not, provide. These include, but
are not limited to:
•
Custom products including special designs, processes, and packaging.
•
Supply chain management requirements.
•
Strategic inventories to allow for unexpected changes in demand.
•
Special testing.
•
Thermal and power management.
•
Hi-Rel Testing/Screening
•
Application Specific Power Modules (ASPM) where power semiconductors are
combined with driver and protection circuits to meet your specific application
requirements.
For additional information contact your local APT Representative
or APT directly.
20
APT USA
405 S. W. COLUMBIA STREET
BEND, OR 97702 U.S.A.
TEL: (541) 382-8028 or 1-800-522-0809
FAX: (541) 388-0364
http://www.advancedpower.com
E-mail: [email protected]
APT EUROPE
PARC CADERA NORD - AV KENNEDY BAT B4
33700 MERIGNAC - FRANCE
TEL: (33) (0)5 57 92 15 15
FAX: (33) (0)5 56 47 97 61
SALES OFFICES
EASTERN USA
TEL: (978) 686-5352
FAX: (978) 686-5441
E-mail: [email protected]
EUROPE
TEL: 33-557 92 15 15
FAX: 33-556 47 97 61
E-mail: [email protected]
ASIA, SOUTH AMERICA, AUSTRALIA
TEL: (541) 382-8028
FAX: (541) 388-0364
E-Mail: [email protected]
WESTERN USA
TEL: (541) 382-8028
FAX: (541) 388-0364
E-Mail: [email protected]
is a registered trademark of Advanced Power Technology, Inc.
© 1998
ISOTOP® is a registered trademark of SGS Thomson
21
APT reserves the right to change, without notice, the specifications and information contained herein.
055-0007 REV H