2SC5661 / 2SC4725H / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz) 2SC5661 / 2SC4725H / 2SC4725 / 2SC4082 / 2SC3837K zExternal dimensions (Units : mm) 1.2 0.8 1.2 0.32 0.2 0.2 (2) (3) 0.8 2SC5661 0.4 0.4 zFeatures 1) High transition frequency. (Typ. fT = 1.5GHz) 2) Small rbb’⋅Cc and high gain. (Typ. 6ps) 3) Small NF. 0.13 0to0.1 0.5 0.22 (1) ROHM : VMT3 (1) Base (2) Emitter (3) Collector 0.15Max. z Absolute maximum ratings (Ta = 25°C) 2SC4725 (1) 2SC4082 2SC3837K NP AC∗ NP AC∗ EMT3 NP AC∗ UMT3 NP 1C∗ SMT3 NP AC∗ T2L T2L TL T106 T146 8000 8000 3000 3000 3000 1.6 1.6 ROHM : EMT3 EIAJ : SC-75A 0to0.1 2SC4725 EMT3H 0.1Min. 2SC4082 (1) 2SC4725H VMT3 0.15 2SC5661 1.0 0.2 0.8 Type Package hFE Basic ordering unit (pieces) (2) (3) 0.3 zPackaging specifications and hFE Marking Code 0.5 0.5 Each lead has same dimensions 1.6 °C 1.0 °C 0.5 0.5 −55~+150 (1) Base (2) Emitter (3) Collector (3) (2) ∗ Denotes hFE 0.3 0.7 Tstg ROHM : EMT3 Flat lead EIAJ : SC-89 1.3 2.0 Tj Storage temperature W (1) Emitter (2) Base (3) Collector 1.25 0.1to0.4 0to0.1 ROHM : UMT3 EIAJ : SC-70 0.7 0.15 0.2 2.1 0.9 Junction temperature 0.2 150 (1) Emitter (2) Base (3) Collector Each lead has same dimensions (2) (3) 0.4 (1) 2SC3837K 1.6 0.3to0.6 0.8 0to0.1 ROHM : SMT3 EIAJ : SC-59 0.15 2.8 1.1 0.15 0.7 PC 2SC4082,2SC3837K (2) (1) (3) 0.55 2SC5661,2SC4725H, 2SC4725 Collector power dissipation 0.85 0.65 0.65 VEBO IC 1.6 2SC4725H 0.95 0.95 1.9 2.9 V V V mA 0to0.1 Unit 30 18 3 50 0.2 Limits VCBO VCEO 0.27 Symbol 0.12 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (1) Emitter (2) Base (3) Collector Each lead has same dimensions 2SC5661 / 2SC4725H / 2SC4725 / 2SC4082 / 2SC3837K Transistors zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Parameter BVCBO BVCEO 30 18 3 − − − − V V IC = 10µA IC = 1mA V µA IE = 10µA Emitter cutoff current IEBO VCE(sat) − − − − 0.5 0.5 − 56 600 − − − 1500 0.9 0.5 180 − 1.5 MHz pF − 6 13 ps VCB = 10V , IC = 10mA , f = 31.8MHz − 4.5 − dB VCE = 12V , IC = 2mA , f = 200MHz , Rg = 50Ω Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor BVEBO ICBO hFE fT Cob rbb'·Cc NF − − Conditions VCB = 10V µA VEB = 2V V − IC/IB = 20mA/4mA VCE/IC = 10V/10mA VCB = 10V , IC = 10mA , f = 200MHz VCB = 10V , IE = 0A , f = 1MHz