MICROSEMI MXP1005

MXP1005
Photovoltaic By-Pass Diode
120 Volts, 2.25 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
KEY FEATURES
DESCRIPTION
Gold diffused for low forward
voltage
Epitaxial structure minimizes
forward voltage drop
Forward voltage decreases with
radiation exposure
Qualified for space applications
Available in leaded configuration
High voltage for series
applications
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents (see
graph for Vf vs. If). A version with attached leads is
available.
Increases efficiency of
photovoltaic arrays
Protects photovoltaic cells from
reverse voltage
MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED)
Description
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 135°C
Junction Temperature Range
Storage Temperature Range
Symbol
Max.
Unit
VRRM
VRWM
VR
IF(ave)
Tj
Tstg
120
120
120
2.25
-65 to +150
-65 to +200
Volts
Volts
Volts
Amps
°C
°C
ELECTRICAL PARAMETERS
Description
Symbol
Reverse (Leakage)
Current (in dark)
Copyright  2002
MXP1005.PDF, 2002-05-03
IR25
VR= 96 Vdc, Ta= 25°C
IR150
VR= 96 Vdc, Ta= 150°C
VF1
IF= 2. 25 A, Ta= 25°C
Cj1
BVR
VR= 4 Vdc
IR= 200 µA, Ta= 25°C
Min
120
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Typ.
Max
Unit
2
10
4
8
µA
mA
720
840
mV
300
160
600
pF
V
Page 1
MXP1005
Forward Voltage
pulse test, pw= 300 µs
Junction Capacitance
Breakdown Voltage
Conditions
MXP1005
Photovoltaic By-Pass Diode
120 Volts, 2.25 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
W W W. Microsemi .COM
Mechanical Outline
MXP1005 die
dimensions in mils before sawing
160
147
metal pad
(anode)
13
0
0 13
MECHANICALS
147 160
die thickness is nominal 4.5 to 5.5 mils
Copyright  2002
MXP1005.PDF, 2002-05-03
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
MXP1005
Photovoltaic By-Pass Diode
120 Volts, 2.25 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
W W W. Microsemi .COM
MXP1005 typical capacitance vs. voltage
350
capacitance (pF)
300
250
200
150
100
0
10
20
30
40
50
60
70
80
90
100
Vr (V)
MXP1005 typical reverse current vs. temperature
1.00E-02
Ir @ 96V (A)
1.00E-03
1.00E-04
1.00E-05
25
50
75
100
125
150
Ta (deg. C)
Copyright  2002
MXP1005.PDF, 2002-05-03
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 3
GRAPHS
1.00E-06
MXP1005
Photovoltaic By-Pass Diode
120 Volts, 2.25 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
W W W. Microsemi .COM
MXP1005 typical forward characteristic
0.90
Vf (V)
0.85
0.80
0.75
0.70
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
If (A)
GRAPHS
Copyright  2002
MXP1005.PDF, 2002-05-03
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 4
MXP1005
Photovoltaic By-Pass Diode
120 Volts, 2.25 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
NOTES
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NOTES
Copyright  2002
MXP1005.PDF, 2002-05-03
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 5