1,310nm MQW-DFB CATV Laser FLD3F8CZ FEATURES • • • • BENEFITS Direct Modulation MQW DFB Laser • 78 Channel NTSC Loading Built-in TEC, Thermistor and Monitor PD (112 Channel device available) Optical Isolator • Low Residual CSO & CTB 14-Pin Butterfly Type Module • 5.5 dB Link Budget Available • Suitable for Narrow Cast Configuration APPLICATIONS This MQW DFB laser is intended for application in analog AM, CATV at 1,310nm. Transmission spans of 15 km are possible without amplification. DESCRIPTION This MQW (Multiple Quantum Well) DFB laser for analog AM application is a middle power laser capable of carrying 78 channels with excellent CSO, CTB, and CNR performance. It is packaged in a ‘butterfly’ type module. The module employs a cost effective optical coupling system, coupling the laser output through a built-in optical isolator into a single mode fiber pigtail. The module also includes a monitor photodiode, a thermoelectric cooler (TEC) and a thermistor. ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Symbol Ratings Unit Storage Temperature Tstg -40 to +70 °C Operating Case Temperature Top -20 to +65 °C Optical Output Power Pf 8 mW Laser Forward Current IF 150 mA Laser Reverse Voltage VR 2 V VDR 20 V TEC Voltage Vc 2.5 V TEC Current Ic 1.4 A Parameter Photodiode Reverse Voltage Edition 1.1 February 2000 1 1,310nm MQW-DFB CATV Laser FLD3F8CZ TEC AND THERMISTOR CHARACTERISTICS (TL=25±1°C) Limit Symbol Min. Max. Unit Test Conditions TEC Current Ic - 1.0 A ∆T=40°C TEC Voltage Vc - 2.0 V ∆T=40°C TEC Capacity ∆T 40 - °C Ic=1A Thermistor Resistance Rtr 9.5 10.5 kΩ - Thermistor B Constant B K - Parameter typ. 3,900 Tc=Case Temperature, TL=Laser Temperature OPTICAL AND ELECTRICAL CHARACTERISTICS (TL=25±1°C) Parameter Symbol Limits Min. Max. Unit Conditions CW Threshold Current Ith - 20 mA Forward Voltage (pin 3-13) VF - 1.5 V Optical Output Power Pf 2 4 mW CW, IF=Iop Slope Efficiency S 0.08 - mW/mA CW, IF=Iop Monitor Current Im 30 900 µA CW, IF=Iop, VDR=5V Photodiode Dark Current Id - 100 nA VDR=5V Photodiode Capacitance Ct - 12 pF VDR=5V, f=1MHz Peak Wavelength λp 1,290 1,330 nm CW, IF=Iop SSR 25 - dB CW, IF=Iop Bandwidth (-1dB) fc 1.5 - GHz Note (2) Isolation Is 25 - dB Tc=0 to 65°C Relative Intensity Noise RIN - -155 dB/Hz Note (3) Composite Second Power Composite Triple Beat Carrier to Noise Ratio CSO CTB CNR - -57 -65 - dBc dBc dB Note (4) SideMode Suppression Ratio (1) (2) (3) (4) 50 CW, IF=Iop Total change in Pf over -20<Tc<+65°C, Test conditions: Pf=4mW at TL=Tc=25°C. Constant current operation with TEC operating. Test condition: Pf=4mW, No matching network is used in the measurement. Test condition: Pf; same power of Note 4, measuring bandwidth: 45-600MHz, Optical reflection=-40dB (no long-haul fiber is used in the measurement.) Test condition: Pf=2mW (minimum) to 4mW (maximum), Optical Modulation, Index=3.2% channel (minimum), 78 unmodulated carriers (55.25 to 547.25 MHz; ch. 2 to 78 plus A-1), Optical link loss=5.5 dB (15 km singlemode fiber), Noise equivalent current of 1st stage of the receiver=7pA/ Hz, Receiver responsivity=0.86m/W, Optical reflection=-40dB (excluding reflection from long-haul fiber). Edition 1.1 February 2000 2 1,310nm MQW-DFB CATV Laser FLD3F8CZ Fig. 2 Forward Current vs. Forward Voltage Fig. 1 Optical Output Power and Monitor Current vs. Laser Forward Current 10 100 1.0 TL=25°C If=Im 0.4 Forward Current, IF(mA) 0.6 6 4 Pin 3-13 0.8 Monitor Current, Im(mA) 8 Optical Output Power, Pf(mW) TL=25°C If=Pf 0.2 2 80 60 40 20 0 0 0 20 40 60 0 80 0.5 1.0 1.5 2.0 2.5 Forward Voltage, VF (V) Forward Current, IF(mA) Fig. 4 Lasing Spectrum 10 50 Relative Intensity (dB) Threshold Current, Ith(mA) Fig. 3 Temperature Dependence of Threshold Current 20 10 5 IF = Iop TL = 25°C 0 -20 -40 -60 -40 -20 0 20 40 60 1300 80 Laser Temperature, TL (°C) 1310 Wavelength (nm) Edition 1.1 February 2000 3 1320 1,310nm MQW-DFB CATV Laser FLD3F8CZ Fig. 6 Frequency Response 6 Relative Response (dB) 0.5 TL = 25°C 0.4 I = I F op 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -20 0 20 40 60 80 3 0 -3 0 1.0 2.0 Case Temperature, Tc (°C) Frequency (GHz) Fig. 7 RIN Characteristics Fig. 8 Thermistor Resistance vs. Temperature Thermistor Resistance, Rtr (KΩ) -110 Pf = 3mW, CW BR<-40dB TL=25°C -120 RIN (dB/Hz) Tracking Error (dB) Fig. 5 Tracking Characteristics -130 -140 -150 -160 200 100 50 20 10 5 2 1 -40 -170 0 1 -20 0 20 40 60 80 Temperature (°C) 2 Frequency (GHz) Edition 1.1 February 2000 4 1,310nm MQW-DFB CATV Laser FLD3F8CZ 3.0 3.0 2.0 2.0 VC 1.0 1.0 IC 0.0 0.0 -1.0 0 10 20 30 40 50 60 70 Cooler Current, Ic (A) Cooler Voltage, Vc (V) Fig. 9 Cooler voltage and Cooler Current vs. Case Temperature -1.0 80 Case Temperature, Tc (°C) Fig. 10 CNR vs. Output Power Fig. 11 CSO and CTB vs. Output Power -40 55 54 CSO, CTB (dBc) 53 CNR (dB) 52 51 50 49 -50 NTSC-78ch Optical modulation index=4.0%/ch (Typ.) [email protected] -60 [email protected] -70 48 [email protected] 47 -80 0 46 45 0 2 4 2 4 6 Optical Output Power (mW) 6 Optical Output Power, Pf (mW) NTSC-78ch OMI=4.0%/ch (Typ.) Link Loss=5.5dB (15km Single Mode Fiber) Noise Equivalent Current of Receiver, Ieq=7pA/ Hz Sensitivity of PIN=0.86A/W Edition 1.1 February 2000 5 8 1,310nm MQW-DFB CATV Laser FLD3F8CZ Fig. 12 Output Power vs. CTB -40 78 ch. (55.25-547.25 MHz) m=3.5%/ch. 15 km SMF (5.5dB Link) CTB (dBc) -50 -60 548.5 MHz -70 313 MHz -80 1 2 3 4 Pf (mW) UNIT: mm “CZ” PACKAGE 17.24 15.24 5.41 TOP VIEW 14-0.1 PIN 1 7 5 4 3 2 1 10 11 12 13 14 5.08 TEC 5.25 5.08 ø0.9 ø5.2 8.25 5.4 6 15.2 2.54 14-0.5 8.89 12.7 PIN 7 20.83 26.04 8 0.4 4-ø2.67 PIN 8 9 10.2 PIN 14 # PIN DESIGNATIONS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 TEMPERATURE MONITOR TEMPERATURE MONITOR LASER DC BIAS (-) MONITOR (ANODE) MONITOR (CATHODE) TEHP (+) TEHP (-) GROUND GROUND NC LASER GROUND LASER MODULATION (-) GROUND NC 29.97 0.4 4.15 5.8 L 31 21 15.5 * Note Fiber length (L) shall be specified in the detail (individual) specification, if it is special. L=1000±200 for standard. Edition 1.1 February 2000 6 1,310nm MQW-DFB CATV Laser FLD3F8CZ For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FME, QDD Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 Edition 1.1 February 2000 7