FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm (Typ.) High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5803X is a high-gain, wide band 3-stage MMIC amplifier designed for operation in the 27.5-31.5 GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point, and point-to-multi-point(LMDS) communication applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain Voltage VDD 10 V Gate Voltage VGG -3.0 V Input Power Pin 25 dBm Storage Temperature Tstg -65 to +175 °C Operating Backside Temperature Top -40 to +85 °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively. 3. This product should be hermetically packaged ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Frequency Range Symbol Min. f Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Drain Current Conditions Iddrf Limits Typ. Max. GHz 27.5 - 31.5 VDD = 6V f = 27.5 ~ 31.5 GHz *: at f = 27.5-30.0 GHz **: at f = 30.0-31.5 GHz IDD = 650mA (Typ.) ZS = ZL = 50Ω Unit 28 30 - dBm 12* 10** 14* 12** 19* 17** dB - 700 950 mA - 20 - % Power-Added Efficiency ηadd Input Return Loss RLin - -12 - dB RLout - -8 - dB Output Return Loss Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1) G.C.P.: Gain Compression Point Edition 1.1 June 2000 1 FMM5803X 27.5-31.5GHz Power Amplifier MMIC P1dB, G1dB vs. FREQUENCY 34 IDD = 650mA VDD = 6V 32 P1dB 28 24 16 G1dB 22 14 20 12 18 27 28 29 30 31 32 Frequency (GHz) OUTPUT POWER vs. IMD -20 -25 VDD = 6V IDD = 650mA ∆f = +10MHz 28GHz IM3 31GHz IM3 -30 -35 -40 -45 -50 13 15 17 19 21 23 25 27 29 Total Output Power (dBm) BONDING LAYOUT VGG VDD1 VDD2 VDD3 VDD4 VDD5 2 G1dB (dB) 18 26 IM3 (dBc) P1dB (dBm) 30 FMM5803X 27.5-31.5GHz Power Amplifier MMIC ASSEMBLY DRAWING VGG VDD 0.15µF 220pF 0.15µF 220pF RFout RFin 220pF 0.15µF VDD S-PARAMETERS VDD = 6V, IDS = 650mA FREQUENCY S11 (MHZ) MAG ANG 24000 24500 25000 25500 26000 26500 27000 27500 28000 28500 29000 29500 30000 30500 31000 31500 32000 32500 33000 33500 .685 .618 .547 .487 .442 .420 .415 .404 .379 .337 .283 .227 .171 .130 .126 .171 .274 .423 .565 .668 36.1 16.4 -7.8 -37.2 -71.2 -106.9 -138.7 -166.3 169.0 148.9 130.6 113.1 99.3 91.2 80.2 60.5 29.4 -6.5 -38.7 -64.6 S21 MAG 3.270 3.920 4.650 5.380 6.100 6.540 6.620 6.540 6.500 6.520 6.450 6.390 6.310 6.270 6.130 5.800 5.250 4.430 3.310 2.330 S12 ANG -30.4 -59.5 -89.6 -121.0 -155.1 171.1 137.8 107.0 76.5 45.8 15.7 -14.8 -45.0 -77.3 -111.1 -147.2 173.0 133.0 93.7 57.4 S22 MAG ANG MAG .001 .001 .002 .002 .002 .003 .003 .003 .003 .004 .004 .005 .005 .006 .008 .008 .008 .008 .007 .006 53.8 34.9 15.1 -9.3 -35.1 -63.8 -97.3 -120.0 -146.2 -173.6 159.7 136.1 110.3 84.9 54.5 24.3 -11.8 -49.4 -83.8 -117.9 .230 .152 .111 .129 .176 .227 .272 .306 .328 .338 .343 .341 .339 .347 .370 .415 .476 .533 .569 .589 ANG 15.4 -12.0 -57.1 -106.0 -136.9 -157.6 -174.5 170.7 156.0 140.8 124.5 106.4 85.5 61.8 35.9 9.7 -15.7 -39.0 -58.4 -73.2 Download S-Parameters, click here 3 FMM5803X 27.5-31.5GHz Power Amplifier MMIC CHIP OUTLINE VGG 970 VDD3 VDD2 VDD1 270 1230 1500 2950 2010 Unit: µm 2080 1925 1030 990 RFout RFin 155 0 3340 1230 2950 2010 1500 3225 120 VDD5 VDD4 Chip Size: 3340±30µm x 2080±30µm Chip Thickness: 70±20µm Pad Dimensions: 1. DC 80µm x 80µm 2. RF 120µm x 80µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 4