PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT129 PH: (561)283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-78 NPN SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING: Collector to Base Emitter to Base Collector to Emitter Collector Current Power Dissipation TA = 25 °C BVCBO BVEBO 45** Vdc 7.0 Vdc BVCEO IC 45 Vdc 50 mA PD PD 0.75 (Both Sides) Watts Tstg -65 to +200 °C Operating Temperature TJ -65 to +200 Lead Temperature From Case TL °C °C Power Dissipation TC = 25 °C Storage Temperature ELECTRICAL CHARACTERISTICS TA @ 25 ° C PARAMETERS SYMBOL Collector to Collector Voltage BVCCO Emitter to Base Voltage BVEBO Collector to Emitter Voltage Collector to Collector Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current BVCEO BVC1C2 ICBO ICBO Collector Cutoff Current ICEX ICEX Emitter Cutoff Current I EBO TEST CONDITIONS Watts MIN 70 TYP MAX UNIT Vdc IE = 10µA 7.0 Vdc IC=1.0mA 45 Vdc IC=1.0µA VCB =30V 100 Vdc VCB =30V, TA =150°C 0.1 nA 0.1 µA µA VEB=5.0V 0.1 µA nA D.C. Current Gain Pulsed* h FE D.C. Current Gain Pulsed* h FE D.C. Current Gain Pulsed* h FE D.C. Current Gain Pulsed* h FE IC=1.0mA, VCE =5.0V, TA = -55°C IC=10mA, VCE =5.0V D.C. Current Gain Pulsed* h FE IC=50mA, VCE =5.0V VCE(sat) VCE(sat) IC=10mA, IB =1.0mA 0.3 Vdc IC=50mA, IB =5.0mA 0.6 Vdc IC=10mA, VCE =5.0V 0.9 Vdc IC=50mA, VCE =5.0V 1.0 Vdc Saturation Voltage* Saturation Voltage* Base Emitter Voltage* Base Emitter Voltage* Base Emitter Voltage* Current Gain at F = Emitter Transition Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Output Capacitance Frequency Cutoff Transition Frequency VBE(sat) VBE(on) VBE(on) h FE IC=10µA, VCE =5.0V IC=1.0mA, VCE =5.0V 70 - 100 - 40 - 115 - 50 - Vdc - CTE CC1-C2 pF IC1-C2 Cob nA f&b fT pF VCB =20V IC=10µA, VCE =5.0V IC=1.0mA, VCE =5.0V Notes: *Pulse Width ≤300usec 2% Duty Cycle, ** IC=10µA 3.0 pF MHz MHz 10 220 Page 1 of 2 TYPE: IT129 SMALL SIGNAL CHARACTERISTICS Input Impedance SYMBOL UNITS Ohms Voltage Feedback Ratio X10-4 Base Current Differential IC =10µA, VCE =5.0V Base Current Differential IC = 1.0mA VCE = 5.0V DC Current Gain Ratio Base-Emitter Voltage Differential IC =1.0mA, VCE =5.0V Base-Emitter Voltage Differential Change Due to Temp IC =1.0mA, VCE =5.0V TA = -55°C to +125°C MIN TYP MAX | IB1 – IB2 | 20 nA | IB1 – IB2 | 2.0 µA VBE1 -VBE2 5.0 mV ∆(VBE1-VBE2) 20 µV/°C MAX UNITS h FE1/h FE2 SWITCHING CHARACTERISTICS Turn-On Time SYMBOL ton MIN TYP Turn-Off Time toff ns ns Delay Time td ns Rise Time tr ns Storage Time ts ns Fall Time tf ns FUNCTIONAL TEST Common-Emitter Amplifier Power Gain Power Output Collector Efficiency Power Output SYMBOL GPE MIN TYP MAX UNITS dB Pout Watt η % Pout Watt Page 2 of 2