256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Dec. 2009 1 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Document Title 256Mbit (16M x16) Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Dec. 2005 Preliminary Apr. 2006 Preliminary Jun. 2006 Preliminary 0.2 Define : Current value (Page 11 ~ 12) 1. Cerrect : 1-1. 4Banks x 2Mbits x32 --> 4Banks x 4Mbits x16(Ordering information; Page 06). 1-2. VDDQ / VSSQ : Power supply for output buffers (Page 08). 2. Remove : Special Power consumption function of Auto TCSR(Temperature Compensated Self Refresh) and PASR(Partial Array Self Refresh). 0.3 3. Define : AC Operating TEST condition and AC / DC Output Load circuit (page 10 & 11). Before : Vtt=1.4V Vtt=1.4V RT=500 Ω Output RT=50 Ω Output Z0 = 50Ω 30pF DC Output Load Circuit Rev 1.2 / Dec. 2009 30pF AC Output Load Circuit 2 Revision No. History Draft Date Remark Jun. 2006 Preliminary Jun. 2006 Preliminary Sep. 2006 Final Apr. 2008 Final Dec. 2009 Final After : VTT = 1.4V VTT = 1.4V RT = 50 Ohom RT = 50 Ohom Output Output Z0 = 50 Ohom 50pF 0.3 DC Output Load Circuit 50pF AC Output Load Circuit 4. Specification change : 4-1. IOH / IOL (Page 11) Before : -2 / 2mA --> After : -4 / 4mA. 4-2. tDH, tAH, tCKH, tCH (Page 13) Before : 1.0ns --> After : 0.8ns. 1. Delete 1-1. COMMAND TRUTH TABLE for Extended Mode Register (Page15) 2. Insert 2-1. DQM TRUTH TABLE (Page16) 0.4 1.0 1.1 3. Specitication change : 3-1. IDD6 Before : 3 / 1.5mA --> After : 2 / 1mA 3-2. IDD3N Before :25mA --> After : 30mA 3-3. tCHW / tCLW Change [HY57V561620F(L)T(P)-6x] Before :2.0ns --> After : 2.5ns Final Ver. 1. Update 1-1. Ordering Information table (Page 5) 200Mhz products added 1-2. DC Characteristics II (Page 11) 200Mhz spec. added 1-3. AC Characteristics I (Page 12) 200Mhz spec. added 1-4 AC Characteristics II (Page 13) 200Mhz spec. added 2. Cerrect HY57V561620FT-6 --> HY57V561620FLT-6 (Ordering Information. Page 5) 1.2 Revise (Command Truth Table / P.15) Burst Read Single Write : /WE H --> L 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series DESCRIPTION The Hynix Synchronous DRAM is suited for advaced-consumer application which use the batteries such as Image displayer application (Digital still camera etc.) and portable applications (portable multimedia player and portable audio player). Also, Hynix SDRAMs is used high-speed consumer applications. Short for Hynix Synchronous DRAM, a type of DRAM that can run at much higher clock speeds memory. The Hynix HY57V561620F(L)T(P) Synchronous DRAM is 268,435,456bit CMOS Synchronous DRAM, ideally suited for the consumer memory applications which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304 x 16 I/O. Synchronous DRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the input clock (CLK). The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x16 Input/ Output bus. All the commands are latched in synchronization with the rising edge of CLK. The Synchronous DRAM provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8 locations or full page. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. The Synchronous DRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compartible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, randon-access operation. Read and write accesses to the Hynix Synchronous DRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and the row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. All inputs are LVTTL compatible. Devices will have a VDD and VDDQ supply of 3.3V (nominal). Rev 1.2 / Dec. 2009 4 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series 256Mb Synchronous DRAM(16M x 16) FEATURES ● Standard SDRAM Protocol ● Internal 4bank operation ● Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V ● All device pins are compatible with LVTTL interface ● Low Voltage interface to reduce I/O power ● 8,192 Refresh cycles / 64ms ● Programmable CAS latency of 2 or 3 ● Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst ● 0oC ~ 70oC Operation ● Package Type : 54_Pin TSOPII (Lead Free, Lead) HY57V561620F(L)TP Series : Lead Free HY57V561620F(L)T Series : Leaded ORDERING INFORMATION Part Number Clock Frequency CAS Latency HY57V561620FT-6 166MHz 3 HY57V561620FT-H 133MHz 3 HY57V561620FT-5 200MHz 3 HY57V561620FLT-6 166MHz 3 HY57V561620FLT-H 133MHz 3 HY57V561620FLT-5 200MHz 3 HY57V561620FTP-6 166MHz 3 HY57V561620FTP-H 133MHz 3 HY57V561620FTP-5 200MHz 3 HY57V561620FLTP-6 166MHz 3 HY57V561620FLTP-H 133MHz 3 HY57V561620FLTP-5 200MHz 3 Power Voltage Organization Interface 54Pin TSOP Normal Leaded Low Power 3.3V 4Banks x 4Mbits x16 LVTTL Normal Lead Free Low Power Note: 1. HY57V561620FT(P) Series: Normal power 2. HY57V561620FLT(P) Series: Low Power 3. HY57V561620F(L)T Series: Leaded 54Pin TSOPII 4. HY57V561620F(L)TP Series: Lead Free 54Pin Rev 1.2 / Dec. 2009 5 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series 54 TSOP II Pin ASSIGNMENTS VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 51 DQ14 DQ2 5 50 DQ13 VSSQ 6 49 VDDQ DQ3 7 48 DQ12 DQ4 8 47 DQ11 VDDQ 9 46 VSSQ DQ5 10 45 DQ10 DQ6 11 44 DQ9 VSSQ 12 43 VDDQ DQ7 13 42 DQ8 VDD 14 41 VSS LDQM 15 40 NC /WE 16 39 UDQM /CAS 17 38 CLK /RAS 18 37 CKE /CS 19 36 A12 BA0 20 35 A11 BA1 21 34 A9 A10/AP 22 33 A8 A0 23 32 A7 A1 24 31 A6 A2 25 30 A5 A3 26 29 A4 VDD 27 28 VSS Rev 1.2 / Dec. 2009 54 Pin TSOPII 400mil x 875mil 0.8mm pin pitch 6 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series 54_TSOPII Pin DESCRIPTIONS SYMBOL TYPE DESCRIPTION CLK INPUT Clock : The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK CKE INPUT Clock Enable: Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh CS INPUT Chip Select: Enables or disables all inputs except CLK, CKE and DQM BA0, BA1 INPUT Bank Address: Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity A0 ~ A12 INPUT Row Address: RA0 ~ RA12, Column Address: CA0 ~ CA8 Auto-precharge flag: A10 RAS, CAS, WE INPUT Command Inputs: RAS, CAS and WE define the operation Refer function truth table for details LDQM, UDQM I/O Data Mask: Controls output buffers in read mode and masks input data in write mode DQ0 ~ DQ15 I/O Data Input / Output: Multiplexed data input / output pin VDD / VSS SUPPLY Power supply for internal circuits and input buffers VDDQ / VSSQ SUPPLY Power supply for output buffers NC - Rev 1.2 / Dec. 2009 No connection : These pads should be left unconnected 7 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series FUNCTIONAL BLOCK DIAGRAM 4Mbit x 4banks x 16 I/O Synchronous DRAM Self refresh logic & timer Internal Row Counter 4M x16 Bank3 CLK Column Pre Decoder LDQM, UDQM DQ0 I/O Buffer & Logic Memory Cell Array Sense AMP & I/O Gate X Decoders Column Active WE 4M x16 Bank0 X Decorders Refresh 4M x16 Bank1 X Decorders CAS X Decorders RAS State Machine CS 4M x16 Bank2 Row Pre Decoder Row Active CKE DQ15 Y decoerders Column Add Counter Bank Select A0 BA1 Address Register Burst Counter Burst Length A12 Address Buffers A1 Mode Register CAS Latency Data Out Control Pipe Line Control BA0 Rev 1.2 / Dec. 2009 8 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series ABSOLUTE MAXIMUM RATING Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 oC Storage Temperature TSTG -55 ~ 125 oC Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD supply relative to VSS VDD, VDDQ -1.0 ~ 4.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 1 W Note : Operation at above absolute maximum rating can adversely affect device reliability DC OPERATING CONDITION Parameter Symbol Min Max Unit Note VDD, VDDQ 3.0 3.6 V 1 Input High Voltage VIH 2.0 VDDQ + 0.3 V 1, 2 Input Low Voltage VIL -0.3 0.8 V 1, 3 Power Supply Voltage Note: 1. All voltages are referenced to VSS = 0V. 2. VIH(Max) is acceptable VDDQ + 2V for a pulse width with <= 3ns of duration. 3. VIL(min) is acceptable -2.0V for a pulse width with <= 3ns of duration. AC OPERATING TEST CONDITION (TA= 0 to 70oC, VDD=3.3±0.3V / VSS=0V) Parameter Symbol Value Unit VIH / VIL 2.4 / 0.4 V Vtrip 1.4 V Input Rise / Fall Time tR / tF 1 ns Output Timing Measurement Reference Level Voltage Voutref 1.4 V CL 50 pF AC Input High / Low Level Voltage Input Timing Measurement Reference Level Voltage Output Load Capacitance for Access Time Measurement Note 1 Note: 1. See Next Page Rev 1.2 / Dec. 2009 9 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series VTT = 1.4V VTT = 1.4V RT = 50 Ohom RT = 50 Ohom Output Output Z0 = 50 Ohom 50pF 50pF DC Output Load Circuit AC Output Load Circuit CAPACITANCE (f=1MHz) Parameter Input capacitance Data input / output capacitance Pin Symbol Min Max Unit CLK CI1 2.0 4.0 pF A0 ~ A12, BA0, BA1, CKE, CS, RAS, CAS, WE CI2 2.0 4.0 pF LDQM, UDQM CI3 2.0 4.0 pF DQ0 ~ DQ15 CI/O 3.5 6.5 pF DC CHARACTERRISTICS I (TA= 0 to 70oC) Parameter Symbol Min Max Unit Note Input Leakage Current ILI -1 1 uA 1 Output Leakage Current ILO -1 1 uA 2 Output High Voltage VOH 2.4 - V IOH = -4mA Output Low Voltage VOL - 0.4 V IOL = +4mA Note: 1. VIN = 0 to 3.6V, All other balls are not tested under VIN =0V 2. DOUT is disabled, VOUT=0 to 3.6 Rev 1.2 / Dec. 2009 10 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series DC CHARACTERISTICS II (TA= 0 to 70oC) Parameter Operating Current Symbol Speed Test Condition 5 6 H 110 100 90 Unit Note mA 1 IDD1 Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA IDD2P CKE ≤ VIL(max), tCK = 15ns 1.0 mA IDD2PS CKE ≤ VIL(max), tCK = ∞ 1.0 mA IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 15 IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 8 IDD3P CKE ≤ VIL(max), tCK = 15ns 3 IDD3PS CKE ≤ VIL(max), tCK = ∞ 3 IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 30 IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 20 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 110 100 90 mA 1 Auto Refresh Current IDD5 tRC ≥ tRC(min), All banks active 190 180 170 mA 2 Self Refresh Current IDD6 CKE ≤ 0.2V mA 3 Precharge Standby Current in Power Down Mode Precharge Standby Current in Non Power Down Mode Active Standby Current in Power Down Mode Active Standby Current in Non Power Down Mode mA mA mA Normal 2.0 Low Power 1.0 Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open. 2. Min. of tRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3. HY57V561620FT(P) Series: Normal, HY57V561620FLT(P) Series: Low Power Rev 1.2 / Dec. 2009 11 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) Parameter Symbol 5 Min 6 Max H Unit Min Max Min Max 6.0 1000 7.5 1000 ns 7.5 1000 10 1000 ns Note CL = 3 tCK3 5.0 CL = 2 tCK2 10 Clock High Pulse Width tCHW 2.0 - 2.5 - 2.5 - ns 1 Clock Low Pulse Width tCLW 2.0 - 2.5 - 2.5 - ns 1 CL = 3 tAC3 - 4.5 - 5.4 - 5.4 ns 2 CL = 2 tAC2 - 6.0 - 6 - 6 ns 2 Data-out Hold Time tOH 2.0 - 2.0 - 2.5 - ns Data-Input Setup Time tDS 1.5 - 1.5 - 1.5 - ns 1 Data-Input Hold Time tDH 0.8 - 0.8 - 0.8 - ns 1 Address Setup Time tAS 1.5 - 1.5 - 1.5 - ns 1 Address Hold Time tAH 0.8 - 0.8 - 0.8 - ns 1 CKE Setup Time tCKS 1.5 - 1.5 - 1.5 - ns 1 CKE Hold Time tCKH 0.8 - 0.8 - 0.8 - ns 1 Command Setup Time tCS 1.5 - 1.5 - 1.5 - ns 1 Command Hold Time tCH 0.8 - 0.8 - 0.8 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1.0 - 1.0 - 1.0 - ns System Clock Cycle Time Access Time From Clock CLK to Data Output in High-Z Time 1000 CL = 3 tOHZ3 - 4.5 2.7 5.4 2.7 5.4 ns CL = 2 tOHZ2 - 6.0 2.7 5.4 3 6 ns Note: 1. Assume tR / tF (input rise and fall time) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter. 2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 0.2V. If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter. Rev 1.2 / Dec. 2009 12 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series AC CHARACTERISTICS II Parameter (AC operating conditions unless otherwise noted) Symbol 5 6 H Min Max Min Max Min Max Unit Operation tRC 55 - 60 - 63 - ns Auto Refresh tRRC 55 - 60 - 63 - ns RAS to CAS Delay tRCD 15 - 18 - 20 - ns RAS Active Time tRAS 38.7 100K 42 100K 42 100K ns RAS Precharge Time tRP 15 - 18 - 20 - ns RAS to RAS Bank Active Delay tRRD 10 - 12 - 15 - ns CAS to CAS Delay tCCD 1 - 1 - 1 - CLK Write Command to Data-In Delay tWTL 0 - 0 - 0 - CLK Data-in to Precharge Command tDPL 2 - 2 - 2 - CLK Data-In to Active Command tDAL DQM to Data-Out Hi-Z tDQZ 2 - 2 - 2 - CLK DQM to Data-In Mask tDQM 0 - 0 - 0 - CLK MRS to New Command tMRD 2 - 2 - 2 - CLK CL = 3 tPROZ3 3 - 3 - 3 - CLK CL = 2 tPROZ2 2 - 2 - 2 - CLK Power Down Exit Time tDPE 1 - 1 - 1 - CLK Self Refresh Exit Time tSRE 1 - 1 - 1 - CLK Refresh Time tREF - 64 - 64 - 64 ms RAS Cycle Time Precharge to Data Output High-Z Note tDPL + tRP 1 Note: 1. A new command can be given tRC after self refresh exit. Rev 1.2 / Dec. 2009 13 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 BA0 A12 A11 A10 A9 A8 A7 0 0 0 0 0 OP Code 0 0 A6 A5 A4 A3 CAS Latency OP Code BT A2 A1 A0 Burst Length Burst Type A9 Write Mode 0 Burst Read and Burst Write 1 Burst Read and Single Write CAS Latency A3 Burst Type 0 Sequential 1 Interleave Burst Length A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 0 1 0 1 1 0 1 0 A2 A1 A0 Reserved 0 0 0 2 0 1 3 0 Reserved 1 Burst Length A3 = 0 A3=1 0 1 1 0 1 2 2 0 1 0 4 4 0 1 1 8 8 Reserved 1 0 0 Reserved Reserved 1 Reserved Reserved 1 1 0 Reserved 1 0 1 1 1 Reserved 1 1 0 Reserved Reserved 1 1 1 Full page Reserved Rev 1.2 / Dec. 2009 14 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series COMMAND TRUTH TABLE Function ADDR A10 /AP CKEn-1 CKEn CS RAS CAS WE DQM Mode Register Set H X L L L L X Op Code No Operation H X L H H H X X Device Deselect H X H X X X X X Bank Active H X L L H H X Row Address BA V Column L V Read H X L H L H Read with Autoprecharge H X L H L H X Column H V Write H X L H L L X Column L V Write with Autoprecharge H X L H L L X Column H V Precharge All Banks H X L L H L X X H X Precharge selected Bank H X L L H L X X L V Burst stop H X L H H L X X DQM H X V X Auto Refresh H H L L L H X X Burst-Read Single-Write H X L L L L X A9 Pin High (Other Pins OP code) Self Refresh Entry H L X X X X X X X X X X X X Self Refresh Exit L H Precharge Power Down Entry H L Precharge Power Down Exit L H Clock Suspend Entry H L Clock Suspend Exit L H X L L L H H X X X L H H H H X X X L H H H H X X X L H H H H X X X L V V V X Note 2 1 Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high. 2. see to Next page (DQM TRUTH TABLE) Rev 1.2 / Dec. 2009 15 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series DQM TRUTH TABLE Function CKEn-1 CKEn LDQM UDQM Data Write/Output enable H X L L Data Mask/Output disable H X H H Lower byte write/Output enable, Upper byte mask/Output disable H X L H Lower byte Mask/Output disable, Upper byte write/Output enable H X H L Note 1. H: High Level, L: Low Level, X: Don't Care 2. Write DQM Latency is 0 CLK and Read DQM Latency is 2 CLK Rev 1.2 / Dec. 2009 16 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series CURRENT STATE TRUTH TABLE (Sheet 1 of 4) Current State idle Row Active Read Command CS RAS CAS WE BA0/ BA1 L L L L L L L H X L L H L L L H L H L Amax-A0 Notes Mode Register Set Set the Mode Register X Auto or Self Refresh Start Auto or Self Refresh BA X Precharge No Operation H BA Row Add. Bank Activate Activate the specified bank and row L L BA Col Add. A10 Write/WriteAP ILLEGAL 4 H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4 L H H H X X No Operation No Operation 3 H X X X X X Device Deselect No Operation or Power Down 3 L L L L Mode Register Set ILLEGAL 13 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge Precharge 7 L L H H BA Row Add. Bank Activate ILLEGAL 4 L H L L BA Col Add. A10 Write/WriteAP Start Write : optional AP(A10=H) 6 L H L H BA Col Add. A10 Read/ReadAP Start Read : optional AP(A10=H) 6 L H H H X X No Operation No Operation H X X X X X Device Deselect No Operation L L L L Mode Register Set ILLEGAL 13 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge Termination Burst: Start the Precharge L L H H BA Row Add. Bank Activate ILLEGAL L H L L BA Col Add. A10 Write/WriteAP Termination Burst: Start Write(optional AP) 8,9 L H L H BA Col Add. A10 Read/ReadAP Termination Burst: Start Read(optional AP) 8 L H H H X X No Operation Continue the Burst Rev 1.2 / Dec. 2009 OP CODE Action Description OP CODE OP CODE 5 4 17 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series CURRENT STATE TRUTH TABLE Current State Read Write Read with Auto Precharge Write with Auto Precharge (Sheet 2 of 4) Command CS RAS CAS WE BA0/ BA1 Amax-A0 X X H X X X L L L L L L L H X L L H L L L H L H L Action Description Notes Device Deselect Continue the Burst Mode Register Set ILLEGAL 13 X Auto or Self Refresh ILLEGAL 13 BA X Precharge Termination Burst: Start the Precharge 10 H BA Row Add. Bank Activate ILLEGAL 4 L L BA Col Add. A10 Write/WriteAP Termination Burst: Start Write(optional AP) 8 H L H BA Col Add. A10 Read/ReadAP Termination Burst: Start Read(optional AP) 8,9 L H H H X X No Operation Continue the Burst H X X X X X Device Deselect Continue the Burst L L L L Mode Register Set ILLEGAL 13 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 4,12 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 12 L H H H X X No Operation Continue the Burst H X X X X X Device Deselect Continue the Burst L L L L Mode Register Set ILLEGAL 13 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 4,12 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 12 L H H H X X No Operation Continue the Burst H X X X X X Device Deselect Continue the Burst Rev 1.2 / Dec. 2009 OP CODE OP CODE OP CODE 18 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series CURRENT STATE TRUTH TABLE Current State Precharging Row Activating Write Recovering (Sheet 3 of 4) Command CS RAS CAS WE BA0/ BA1 L L L L L L L H X L L H L L L H L H L Amax-A0 13 X Auto or Self Refresh ILLEGAL 13 BA X Precharge No Operation: Bank(s) idle after tRP H BA Row Add. Bank Activate ILLEGAL 4,12 L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12 H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,12 L H H H X X No Operation No Operation: Bank(s) idle after tRP H X X X X X Device Deselect No Operation: Bank(s) idle after tRP L L L L Mode Register Set ILLEGAL 13 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 4,12 L L H H BA Row Add. Bank Activate ILLEGAL 4,11,1 2 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,12 L H H H X X No Operation No Operation: Row Active after tRCD H X X X X X Device Deselect No Operation: Row Active after tRCD L L L L Mode Register Set ILLEGAL 13 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 4,13 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP Start Write: Optional AP(A10=H) L H L H BA Col Add. A10 Read/ReadAP Start Read: Optional AP(A10=H) L H H H X X No Operation No Operation: Row Active after tDPL OP CODE OP CODE Mode Register Set Notes ILLEGAL Rev 1.2 / Dec. 2009 OP CODE Action Description 9 19 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series CURRENT STATE TRUTH TABLE Current State Write Recovering Write Recovering with Auto Precharge Refreshing Mode Register Accessing (Sheet 4 of 4) Command CS RAS CAS WE BA0/ BA1 Amax-A0 X X Action Description Notes Device Deselect No Operation: Row Active after tDPL Mode Register Set ILLEGAL 13 X Auto or Self Refresh ILLEGAL 13 BA X Precharge ILLEGAL 4,13 H BA Row Add. Bank Activate ILLEGAL 4,12 L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12 H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,9,12 L H H H X X No Operation No Operation: Precharge after tDPL H X X X X X Device Deselect No Operation: Precharge after tDPL L L L L Mode Register Set ILLEGAL 13 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 13 L L H H BA Row Add. Bank Activate ILLEGAL 13 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 13 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 13 L H H H X X No Operation No Operation: idle after tRC H X X X X X Device Deselect No Operation: idle after tRC L L L L Mode Register Set ILLEGAL 13 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 13 L L H H BA Row Add. Bank Activate ILLEGAL 13 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 13 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 13 L H H H X X No Operation No Operation: idle after 2 clock cycles H X X X X X Device Deselect No Operation: idle after 2 clock cycles H X X X L L L L L L L H X L L H L L L H L H L Rev 1.2 / Dec. 2009 OP CODE OP CODE OP CODE 20 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Note : 1. H: Logic High, L: Logic Low, X: Don't care, BA: Bank Address, AP: Auto Precharge. 2. All entries assume that CKE was active during the preceding clock cycle. 3. If both banks are idle and CKE is inactive, then in power down cycle 4. Illegal to bank in specified states. Function may be legal in the bank indicated by Bank Address, depending on the state of that bank. 5. If both banks are idle and CKE is inactive, then Self Refresh mode. 6. Illegal if tRCD is not satisfied. 7. Illegal if tRAS is not satisfied. 8. Must satisfy burst interrupt condition. 9. Must satisfy bus contention, bus turn around, and/or write recovery requirements. 10. Must mask preceding data which don't satisfy tDPL. 11. Illegal if tRRD is not satisfied 12. Illegal for single bank, but legal for other banks in multi-bank devices. 13. Illegal for all banks. Rev 1.2 / Dec. 2009 21 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series CKE Enable(CKE) Truth TABLE (Sheet 2 of 1) CKE Command Current State Self Refresh Previous Current Cycle Cycle CS RAS CAS WE Notes H X X X X X X X INVALID 1 L H H X X X X X Exit Self Refresh with Device Deselect 2 L H L H H H X X Exit Self Refresh with No Operation 2 L H L H H L X X ILLEGAL 2 L H L H L X X X ILLEGAL 2 L H L L X X X X ILLEGAL 2 L L X X X X X X Maintain Self Refresh H X X X X X X X INVALID 1 L H H X X X X X L H H H X X Power Down mode exit, all banks idle 2 L X X X X X L X X X ILLEGAL 2 X X L X X X X Power Down L All Banks Idle Action BA0, ADDR BA1 H L L L X X X X H H H X X X H H L H X X H H L L H X H H L L L H X H H L L L L OP CODE H L H X X X H L L H X X H L L L H X H L L L L H X X Entry Self Refresh H L L L L L OP CODE Mode Register Set L X X X X X X Power Down Rev 1.2 / Dec. 2009 Maintain Power Down Mode Refer to the idle State section of the Current State Truth Table X 3 3 Auto Refresh Mode Register Set Refer to the idle State section of the Current State Truth Table X 3 4 3 3 3 4 4 22 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series CKE Enable(CKE) Truth TABLE (Sheet 2 of 2) CKE Command Current State Any State other than listed above Previous Current Cycle Cycle CS RAS CAS WE BA0, ADDR BA1 Action H H X X X X X X Refer to operations of the Current State Truth Table H L X X X X X X Begin Clock Suspend next cycle L H X X X X X X Exit Clock Suspend next cycle L L X X X X X X Maintain Clock Suspend Notes Note : 1. For the given current state CKE must be low in the previous cycle. 2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting power down mode, a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high. 3. The address inputs depend on the command that is issued. 4. The Precharge Power Down mode, the Self Refresh mode, and the Mode Register Set can only be entered from the all banks idle state. 5. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting deep power down mode, a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high and is maintained for a minimum 200usec. Rev 1.2 / Dec. 2009 23 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Mobile SDR SDRAM OPERATION State Diagram Power On ACT : Active Precharge All Bank Auto Refresh MRS : Mode Register Set FA RE MRS PRE : Precharge REFS Mode Register Set IDLE REFX PREALL : Precharge All Banks Self Refresh E CK w Lo E CK igh H REFA : Auto Refresh REFS : Enter Self Refresh Power Down ROW ACTIVE Write C Lo KE w E CK w Lo READA : Read with Auto Precharge WRITE : Write w/o Auto Precharge WRITEA : Write with Auto Precharge PR E PR E Automatic Sequence Rev 1.2 / Dec. 2009 WRITE READ : Read w/o Auto Precharge WRITE SUSPEND PRE READ SUSPEND Manual input Write E CK igh H C H i KE gh C Lo KE w Read W RI TE A CK EL ow A READ WRITE with AP igh AD RE Read CK EH READ with AP WRITEA SUSPEND C Hi KE gh E CK igh H Active Power Down ACT E CK w Lo READA SUSPEND REFSX : Exit Self Refresh Precharge All 24 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series DESELECT The DESELECT function (CS = High) prevents new commands from being executed by the SDRAM, the SDRAM ignore command input at the clock. However, the internal status is held. The Synchronous DRAM is effectively deselected. Operations already in progress are not affected. NO OPERATION The NO OPERATION (NOP) command is used to perform a NOP to a SDRAM that is selected (CS = Low, RAS = CAS = WE = High). This command is not an execution command. However, the internal operations continue. This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. (see to next figure) ACTIVE The Active command is used to activate a row in particular bank for a subsequent Read or Write access. The value of the BA0,BA1 inputs selects the bank, and the address provided on A0-A12(or the highest address bit) selects the row. This row remains active (or open) for accesses until a PRECHARGE command is issued to that bank. (see to next figure) CLK CKE CLK CKE High-Z CS CS RAS RAS CAS CAS WE WE A0~A9, A11, A12 A0~A9, A11, A12 BA0,1 BA0,1 High-Z RA Row Address BA Bank Address Don't Care NOP command Rev 1.2 / Dec. 2009 Don't Care ACTIVATING A SPECIFIC ROW IN A SPECIFIC BANK 25 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series READ / WRITE COMMAND Before executing a read or write operation, the corresponding bank and the row address must be activated by the bank active (ACT) command. An interval of tRCD is required between the bank active command input and the following read/write command input. The READ command is used to initiate a Burst Read to an active row. The value of BA0 and BA1 selects the bank and address inputs select the starting column location. The value of A10 determines whether or not auto precharge is used. If auto-precharge is selected, the row being accessed will be precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent access. The valid data-out elements will be available CAS latency after the READ command is issued. The WRITE command is used to initiate a Burst Write access to an active row. The value of BA0, BA1 selects the bank and address inputs select the starting column location. The value of A10 determines whether or not auto precharge is used. If auto-precharge is selected, the row being accessed will be precharged at the end of the write burst; if auto precharge is not selected, the row will remain open for subsequent access. /CLK CLK CKE CLK CKE H ig h -Z CS CS RAS RAS CAS CAS WE A0 ~ A8 WE CA E n a b le A u to P re c h a rg e A 0 ~ A 8 CA D isa b le A u to A10 P re c h a rg e A10 B A 0 ,1 H ig h -Z BA Read Com m and O p e ra tio n B A 0 ,1 D o n 't C a re BA W rite C o m m a n d O p e ra tio n READ / WRITE COMMAND Rev 1.2 / Dec. 2009 26 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series READ A read operation starts when a read command is input. Output buffer becomes Low-Z in the (/CAS Latency - 1) cycle after read command set. The SDRAM can perform a burst read operation. The burst length can be set to 1, 2, 4 and 8. The start address for a burst read is specified by the column address and the bank select address at the read command set cycle. In a read operation, data output starts after the number of clocks specified by the /CAS Latency. The /CAS Latency can be set to 2 or 3. When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes High-Z at the next clock after the successive burst-length data has been output. The /CAS latency and burst length must be specified at the mode register. tCK CLK Command REA D NOP NOP tLZ DQ tOH Do0 Do1 Do2 Do3 Do1 Do2 tAC CL = 2 Command REA D NOP NOP NOP tLZ tOH Do0 DQ Do3 tAC CL = 3 Undefined Don't Care Read Burst Showing CAS Latency Rev 1.2 / Dec. 2009 27 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series tCK CLK RE AD CMD N OP N OP tLZ DQ DQ DQ DQ BL=1 tOH Do 0 Do 0 Do 0 Do 0 BL=2 BL4 BL=8 Do 1 Do 1 Do 1 Do 2 Do 2 Do 3 Do 3 Do 4 CL = 2 Do 5 Undefined Do 6 Do 7 Don't Care Read Burst Showing BL Rev 1.2 / Dec. 2009 28 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series READ to READ Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the new burst follows either the last element of a completed burst or the last desired element of a longer burst that is being truncated. When another read command is executed at the same ROW address of the same bank as the preceding read command execution, the second read can be performed after an interval of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid. CLK Command Address READ BA, Col a NOP NOP READ’ BA, Col b CL =2 DQ Do a0 Do a1 Do b0 Do b1 Do a1 Do b0 CL =3 DQ Do a0 Don't Care Consecutive Read Bursts A READ command can be initiated on any clock cycle following a previous READ command. Non-consecutive Reads are shown in Figure. Full-speed random read accesses within a page or pages can be performed as shown in Fig. Rev 1.2 / Dec. 2009 29 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series CLK Command Address READ READ BA, Col BA, Col n b CL =2 DQ Dob Don CL =3 Dob Don DQ Don't Care 1) Don (or b): Data out from column n 2) BA, Col n (b) = Bank A, Column n (b) 3) Burst Length = 4 : 3 subseqnent elements of Data Out appear in the programmed order following Do n (b) Non-Consective Read Bursts CLK Command READ READ READ READ Address BA, Col BA, Col BA, Col BA, Col x n g b CL =2 DQ Don Don' Dox Dox' Dob Dob' Dog Dog' Don Don' Dox Dox' Dob Dob' Dog CL =3 DQ 1) Don, etc: Data out from column n, etc n', x', etc : Data Out elements, accoding to the programmd burst order 2) BA, Col n = Bank A, Column n 3) Burst Length = 1, 2, 4, 8 or full page in cases shown 4) Read are to active row in any banks Dog’ Don't Care Randum Read Bursts Rev 1.2 / Dec. 2009 30 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series READ BURST TERMINATE Data from any READ burst may be truncated with a BURST TERMINATE command. The BURST TERMINATE latency is equal to the read (CAS) latency, i.e., the BURST TERMINATE command should be issued X cycles after the READ command where X equals the desired data-out element. CLK Com m and Address READ BURST BA, Col n CL =2 DQ Do n Do n' CL =3 Do n DQ Do n' 1) Do n : Data out from column n 2) BA, Col n = Bank A, Colum n n 3) Cases shown are bursts of 4, 8, or full page term inated after 2 data elem ents Don't Care Terminating a Read Burst Rev 1.2 / Dec. 2009 31 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series READ to WRITE Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If truncation is necessary, the BURST TERMINATE command must be used, as shown in next fig. CLK Com m and Address READ BURST W RITE BA, Col BA, Col b n CL = 2 DQ Do n Do n' D I b0 D I b1 D I b2 DI b3 D I b0 D I b1 D I b2 DI b3 CL = 3 Do n DQ Do n' 1) DO n = Data O ut from colum n n; DI b = Data In to colum n b Don't Care Read to Write Note : 1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the preceding read command, the write command can be performed after an interval of no less than 1 clock. However, DQM must be set High so that the output buffer becomes High-Z before data input. 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided that the other bank is in the bank active state. However, DQM must be set High so that the output buffer becomes High-Z before data input. Rev 1.2 / Dec. 2009 32 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series READ to PRECHARGE Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. Note that part of the row precharge time is hidden during the access of the last data element(s). In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge. The disadvantage of the PRECHARGEcommand is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts. CLK Com m and READ PRE ACT tRP Address Bank A, All BA, Col n BA, Row CL = 2 DQ Don CL = 3 D on DQ D on't Care 1) D O n = D ata O ut from colum n n 2) Note that Precharge m ay not be issued before tRAS ns after the ACTIVE com m and for applicable banks. 3) The ACTIVE com m and m ay be applied if tRC has been m et. READ to PRECHARGE Rev 1.2 / Dec. 2009 33 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Write Input data appearing on the data bus, is written to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered Low, the corresponding data will be written to the memory; if the DM signal is registered High, the corresponding data inputs will be ignored, and a write will not be executed to that byte / column location. During WRITE bursts, the first valild data-in element will be registered coincident with the WRITE command. Subsequent data elements will be registered on each successive positive clock edge. Upon completion of a fixed-length burst, assuming no other commands have been initiated, the DQ will remain High-Z and any additional input data will be ignored. A full-page burst will continue until terminated. Data for any WRITE burst may be truncated with a subsequent WRITE command, and data for a fixed-length WRITE burst may be immediately followed by data for a WRITE command. The new WRITE command can be issued on any clock following the previous WRITE command, and the data provided coincident with the new command applies to the new command. CLK Command WRITE Address BA, Col b DQ D Ib0 DQ D Ib0 D Ib1 DQ D Ib0 D Ib1 D Ib2 D Ib3 DQ D Ib0 D Ib1 D Ib2 D Ib3 BL = 1 BL = 2 BL = 4 D Ib4 D Ib5 D Ib6 D Ib7 BL = 8 CL = 2 or 3 Basic Write timing parameters for Don't Care Write Burst Operation Note : 1. Same bank, same ROW address: When another write command is executed at the same ROW address of the same bank as the preceding write command, the second write can be performed after an interval of no less than 1 clock. In the case of burst writes, the second write command has priority. 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two write commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. In the case of burst write, the second write command has priority. Rev 1.2 / Dec. 2009 34 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series WRITE to WRITE Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case, a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive edge of the clock following the previous WRITE command. The first data-in element from the new burst is applied after either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The new WRITE command should be issued X cycles after the first WRITE command, where X equals the number of desired data-in element. CLK Command WRITE WRITE Address BA, Col BA, Col b DQ D Ib0 n D Ib1 D Ib2 D Ib3 D In0 D In1 D In2 D In3 DM CL = 2 or 3 Don't Care Concatenated Write Bursts CLK Com m and W RITE W RITE W RITE W RITE W RITE Address BA, Col BA, Col BA, Col BA, Col BA, Col DQ b D Ib x D I b' D Ix n D I x’ D In a D I n’ D Ia NOP g D I a’ D Ig D I g’ DM CL = 2 or 3 Don't Care Random Write Cycles Rev 1.2 / Dec. 2009 35 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series WRITE to READ CLK Command WRITE READ Address BA, Col BA, Col b n DIb0 D Ib1 DIb0 D Ib1 DOn0 D On1 D On2 DOn0 DOn1 CL = 2 DOn3 BL = 4 DQ DQ D On2 DOn3 CL = 3 BL = 4 Don't Care The preceding burst write operation can be aborted and a new burst read operation can be started by inputting a new read command in the write cycle. The data of the read command (READ) is output after the lapse of the /CAS latency. The preceding write operation (WRIT) writes only the data input before the read command. The data bus must go into a high-impedance state at least one cycle before output of the latest data. Note: 1. Same bank, same ROW address: When the read command is executed at the same ROW address of the same bank as the preceding write command, the read command can be performed after an interval of no less than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed. 2. Same bank, different ROW address: When the ROW address changes, consecutive read commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the read command can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed (as in the case of the same bank and the same address). Rev 1.2 / Dec. 2009 36 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series WRITE to PRECHARGE Data for any WRITE burst may be followed by a subsequent PRECHARGE command to the same bank (provided Auto Precharge was not activated). When the precharge command is executed for the same bank as the write command that preceded it, the minimum interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data must be masked by means of DQM for assurance of the clock defined by tDPL. To follow a WRITE without truncating the WRITE burst, tDPL should be met as shown in Fig. CLK Command WRITE Address BA, Col DQ PRE b D Ib0 D Ib1 D IO b2 CL = 2 or 3 D Ib3 BL = 4 tDPL Non-Interrupting Write to Precharge Data for any WRITE burst may be truncated by a subsequent PRECHARGE command as shown in Figure. Note that only data-inthat are registered prior to the tDPL period are written to the internal array, and any subsequent data-in should be masked with DM, as shown in next Fig. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. CLK Command WRITE Address BA, Col PRE b DIb0 DIb1 CL = 2 or 3 DIOb2 BL = 4 DQ tDPL Interrupting Write to Precharge Rev 1.2 / Dec. 2009 37 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series BURST TERMINATE The BURST TERMINATE command is used to truncate read bursts (with autoprecharge disabled). The most recently registered READ command prior to the BURST TERMINATE command will be truncated, as shown in the Operation section of this datasheet. Note the BURST TERMINATE command is not bank specific. This command should not be used to terminate write bursts. CLK CKE High-Z CS RAS CAS WE A0 ~ A9 A11, A12 Don't Care BA0, 1 BURST TERMINATE COMMAND Rev 1.2 / Dec. 2009 38 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. Another command to the same bank (or banks) being precharged must not be issued until the precharge time (tRP) is completed. If one bank is to be precharged, the particular bank address needs to be specified. If all banks are to be precharged, A10 should be set high along with the PRECHARGE command. If A10 is high, BA0 and BA1 are ignored. A PRECHARGE command will be treated as a NOP if there is no open row in that bank, or if the previously open row is already in the process of precharging. CKE High-Z A10 defines the precharge mode when a precharge command, a read command or a write command is issued. CS RAS If A10 = High when a precharge command is issued, all banks are precharged. CAS If A10 = Low when a precharge command is issued, only the bank that is selected by BA1/BA0 is precharged. WE A0~A9 A11, A12 If A10 = High when read or write command, autoprecharge function is enabled. While A10 = Low, autoprecharge function is disabled. A10 BA0,1 BA Bank Address Don't Care PRECHARGE command AUTO PRECHARGE Auto Precharge is a feature which performs the same individual bank precharge function as described above, but without requiring an explicit command. This is accomplished by using A10 (A10=high), to enable auto precharge in conjunction with a specific Read or Write command. This precharges the bank/row after the Read or Write burst is complete. Auto precharge is non persistent, so it should be enabled with a Read or Write command each time auto precharge is desired. Auto precharge ensures that a precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to the same bank until the precharge time (tRP) is completed. Rev 1.2 / Dec. 2009 39 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series AUTO REFRESH AND SELF REFRESH Hynix SDR SDRAM devices require a refresh of all rows in any rolling 64ms interval. Each refresh is generated in one of two ways: by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode: - AUTO REFRESH. This command is used during normal operation of the Hynix SDR SDRAM. It is non persistent, so must be issued each time a refresh is required. The refresh addressing is generated by the internal refresh controller.The Hynix SDR SDRAM requires AUTO REFRESH commands at an average periodic interval of tREF. To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of eight AUTO REFRESH commands can be posted to any given SDR SDRAM, and the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is 8*tREF. -SELF REFRESH. The Self Refresh command is initiated like an Auto Refresh command except CKE is disabled(Low). This state retains data in the SDR SDRAM, even if the rest of the system is powered down. Note refresh interval timing while in Self Refresh mode is scheduled internally in the SDR SDRAM and may vary and may not meet tREF time. After executing a self-refresh command, the self-refresh operation continues while CKE is held Low. During selfrefresh operation, all ROW addresses are refreshed by the internal refresh timer. A self-refresh is terminated by a self-refresh exit command. Before and after self-refresh mode, execute auto-refresh to all refresh addresses in or within tREF (max.) period on the condition 1 and 2 below. 1. Enter self-refresh mode within time as below* after either burst refresh or distributed refresh at equal interval to all refresh addresses are completed. 2. Start burst refresh or distributed refresh at equal interval to all refresh addresses within time as below*after exiting from self-refresh mode. Note: tREF (max.) / refresh cycles. The use of SELF REFRESH mode introduces the possibility that an internally timed event can be missed when CKE is raised for exit from self refresh mode. Upon exit from SELF REFRESH an extra AUTO REFRESH command is recommended. The Self Refresh command is used to retain cell data in the SDR SDRAM. In the Self Refresh mode, the SDR SDRAM operates refresh cycle asynchronously. Rev 1.2 / Dec. 2009 40 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series CLK CLK CKE CKE High-Z CS CS RAS RAS CAS CAS WE WE A0 ~ A9 A11, 12 A0 ~ A9 A11, 12 Don't Care BA0, 1 Low-Z Don't Care BA0, 1 AUTO REFRESH COMMAND SELF REFRESH ENTRY COMMAND Note 1: If all banks are in the idle status and CKE is inactive (low level), the self refresh mode is set. Function CKEn-1 CKEn CS RAS CAS WE DQM Auto Refresh H H L L L H X X Self Refresh Entry H L L L L H X X Rev 1.2 / Dec. 2009 ADDR A10/AP BA 41 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series MODE REGISTER SET The mode registers are loaded via the address bits. BA0 and BA1 are used to select the Mode Register. See the Mode Register description in the register definition section. The MODE REGISTER SET command can only be issued when all banks are idle and no bursts are in progress, and a subsequent executable command cannot be issued until tMRD is met. CLK CKE H ig h -Z CS RAS CAS WE Code A0 ~ A9 A11, A12 D o n 't C a re Code BA0, 1 MODE REGISTER SET COMMAND Note: BA0=BA1=Low loads the Mode Register. CLK Command MRS NOP Valid tMRD Address Code Valid Don't Care Code = Mode Register / Extended Mode Register selection (BA0, BA1) and op-code (A0 - An) tMRD DEFINITION Rev 1.2 / Dec. 2009 42 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series POWER DOWN Power down occurs if CKE is set low coincident with Device Deselect or NOP command and when no accesses are in progress. If power down occurs when all banks are idle, it is Precharge Power Down. If Power down occurs when one or more banks are Active, it is referred to as Active power down. The device cannot stay in this mode for longer than the refresh requirements of the device, without losing data. The power down state is exited by setting CKE high while issuing a Device Deselect or NOP command. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CKE, for maximum power savings while in standby. CLK CKE CKE_Low CS RAS CAS WE A0 ~ A9 A11, 12 BA0, 1 D o n 't C a r e POWER-DOWN COMMAND NOTE: This case shows CKE low coincident with NO OPERATION. Alternately POWER DOWN entry can be achieved with CKE low coincident with Device DESELECT. CLK CKE COMMAND NOP NOP All banks idle ACTIVE tRCD Input buffers gated off Enter power-down mode. Exit power-down mode. tRAS tRC DON’T CARE Rev 1.2 / Dec. 2009 43 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Power Up and Initialization Like a Synchronous DRAM, Low Power SDRAM(Mobile SDRAM) must be powered up and initialized in a predefined manner. Power must be applied to VDD and VDDQ(simultaneously). The clock signal must be started at the same time. After power up, an initial pause of 200 usec is required. And a precharge all command will be issued to the Mobile SDRAM. Then, 8 or more Auto refresh cycles will be provided. After the Auto refresh cycles are completed, a mode register set(MRS) command will be issued to program the specific mode of operation (Cas Latency, Burst length, etc.) And a extended mode register set command will be issued to program specific mode of self refresh operation(PASR). The following these cycles, the Mobile SDRAM is ready for normal opeartion. Programming the registers Mode Register The mode register contains the specific mode of operation of the SDR SDRAM. This register includes the selection of a burst length(1, 2, 4, 8, Full Page), a cas latency(1, 2 or 3), a burst type. The mode register set must be done before any activate command after the power up sequence. Any contents of the mode register be altered by re-programming the mode register through the execution of mode register set command. Bank(Row) Active The Bank Active command is used to activate a row in a specified bank of the device. This command is initiated by activating CS, RAS and deasserting CAS, WE at the positive edge of the clock. The value on the BA1 and BA0 selects the bank, and the value on the A0-A12 selects the row. This row remains active for column access until a precharge command is issued to that bank. Read and write opeartions can only be initiated on this activated bank after the minimum tRCD time is passed from the activate command. Read The READ command is used to initiate the burst read of data. This command is initiated by activating CS, CAS, and deasserting WE, RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A8-A0 address inputs select the sarting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at the end of the READ burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses. The length of burst and the CAS latency will be determined by the values programmed during the MRS command. Write The WRITE command is used to initiate the burst write of data. This command is initiated by activating CS, CAS, WE and deasserting RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A8-A0 address inputs select the starting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at the end of the WRITE burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses. Rev 1.2 / Dec. 2009 44 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Precharge The Precharge command is used to close the open row in a particular bank or the open row in all banks. When the precharge command is issued with address A10, high, then all banks will be precharged, and If A10 is low, the open row in a particular bank will be precharged. The bank(s) will be available when the minimum tRP time is met after the precharge command is issued. Auto Precharge The Auto Precharge command is issued to close the open row in a particular bank after READ or WRITE operation. If A10 is high when a READ or WRITE command is issued, the READ or WRITE with Auto Precharge is initiated. Burst Termination The Burst Termination is used to terminate the burst operation. This function can be accomplished by asserting a Burst Stop command or a Precharge command during a burst READ or WRITE operation. The Precharge command interrupts a burst cycle and close the active bank, and the Burst Stop command terminates the existing burst operation leave the bank open. Data Mask The Data Mask comamnd is used to mask READ or WRITE data. During a READ operation, When this command is issued, data outputs are disabled and become high impedance after two clock delay. During a WRITE operation, When this command is issued, data inputs can't be written with no clock delay. If data mask is initiated by asserting low on DQM during the read cycle, the data outputs are enabled. If DQM is asserted to High. the data outputs are masked (disabled) and become Hi-Z state after 2 cycle later. During the write cycle, DQM mask data input with zero latency CK W RIT CM D DM Data M asking H i- Z D0D IN0 D 1 DQ Data M asking 0 Latency D0 MK D1 0 Latency D 0D IN2 D1 D0 M K D 1 W rite Data M asking CK CMD READ DM D ata M askin g 2 Laten cy H i- Z DQ D0 D O U T 0D 1 D0 D O U T1D 1 D0 D D O T 2D 1 D0 MK D1 R ea d D ata M askin g Rev 1.2 / Dec. 2009 45 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Clock Suspend The Clock Suspend command is used to suspend the internal clock of SDR SDRAM. The clock suspend operation stops transmission of the clock to the internal circuits of the device during burst transfer of data to stop the operation of the device. During normal access mode, CKE is keeping High. When CKE is low, it freezes the internal clock and extends data Read and Write operations. (See examples in next Figures) CLK Command RD CKE Masked by CKE Internal CLK Frozen Int. CLK by CKE (CKE = Fixed Low) Q1 DQ Q2 Q3 Q4 Clock Suspend Mode Command WR CKE Masked by CKE Internal CLK Frozen Int. CLK by CKE (CKE = Fixed Low) DQ D1 D2 D3 D4 Clock Suspend Mode Rev 1.2 / Dec. 2009 46 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Power Down The Power Down command is used to reduce standby current. Before this command is issued, all banks must be precharged and tRP must be passed after a precharge command. Once the Power Down command is initiated by keeping CKE low, all of the input buffer except CKE are gated off. Auto Refresh The Auto Refresh command is used during normal operation and is similar to CBR refresh in Coventional DRAMs. This command must be issued each time a refresh is required. When an Auto Refresh command is issued , the address bits is ''Don't care'', because the specific address bits is generated by internal refresh address counter. Self Refresh The Self Refresh command is used to retain cell data in SDRAM. In the Self Refresh mode, the SDRAM operates refresh cycle asynchronously. The Self Refresh command is initiated like an Auto Refresh command except CKE is disabled(Low). Rev 1.2 / Dec. 2009 47 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series CP DIE E E1 C 28 27 B 54 1 e PACKAGE INFORMATION L1 D1 A2 A1 Symbol millimeters A α L inches Min Typ Max Min A 0.991 - 1.194 0.0390 A1 0.050 0.100 0.150 0.0020 0.0039 0.0059 A2 0.950 1.000 1.050 0.0374 0.0394 0.0413 B 0.300 - 0.400 0.012 - 0.016 C 0.120 - 0.210 0.0047 - 0.0083 CP 0.10 Typ Max 0.0470 0.0039 D1 22.149 22.22 22.327 0.8720 0.8748 0.8790 E 11.735 11.76 11.938 0.4620 0.4630 0.4700 E1 10.058 10.16 10.262 0.3950 0.4 0.4040 e - 0.8 - - 0.0315 - L 0.406 - 0.597 0.0160 - 0.0235 L1 - 0.8 - - 0.0315 - alpha Rev 1.2 / Dec. 2009 0 / 5 (min / max) 48