ETC AP1098

AP1098
2.4~2.5 GHz Power Amplifier
2004.07.19 Preliminary
• Ultra LOW Current (see below specs)
The AP1098 is a linear, low current power
amplifier in ISM band utilizing InGaP /GaAs HBT
process. It features a LOW current of 85mA,
small signal gain of 25 dB, linear power of
19dBm and PAE of 28% for 802.11g under 3.3V.
It can also be adjusted to smaller current(~60mA)
with lower linear power (~16dBm). The AP1098
is housed in a 3 x 3 (mm), 16-pin, and QFN
leadless package. The AP1098 is suitable to be
used in portable, low current 802.11b and
802.11g WLAN applications.
• IEEE 802.11b/g WLAN system
• WLAN Portable Devices
• WLAN USB Devices
• Bluetooth and other 2.4 GHz ISM
Band Application
I
F
R
NC
NC
Vcc1
16
15
14
Vcc1
13
12 RF OUT
1
2
3
Dect_Out
4
• Gain: 25 dB
Under Vc=3.3V, Vref=3V
* 11g
linear power: 19dBm
current: 85mA
* 11b
linear power: 23dBm
current: 165mA
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• Low Idle Current: 25mA
Name
Description
RF_IN
GND
RF input.
DC and RF ground.
Vcc_Bias
Supply voltage for bias circuit.
4
Dect_Out
Power detector output.
5
Vb1
1st-stage control voltage
6
Vb2
2nd-stage control voltage
7
GND
DC and RF ground.
8
9
10
11
12
NC
NC
RF_OUT
RF_OUT
RF_OUT
13
VCC1
14
VCC1
No contact (Connect to ground for better
thermal dissipation.)
RF output. Require external matching.
The detail configuration can be found in
Application Notes
Supply voltage for first stage. Some
bypass capacitors are needed for
system application. The detail
configuration can be found in
Application Notes.
15
NC
16
NC
1
2
Input
Match
11 RF OUT
10 RF OUT
Bias
Detector
5
6
7
8
Vb1
Vb2
GND
NC
9
QFN- 16 pin, 3 x 3 (mm)
NC
3
Package
Base
No contact (Connect to ground for better
thermal dissipation.)
The package ground provides circuit
Center Metal ground as well as heat dissipation path
for the power amplifier.
Vb2 can be connected with Vb1 pin into a single Vref through external resistor. (Please refer to the AP1098 Application note)
For more information,please contact us at:
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: [email protected]
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
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AP1098
Vcc_Bias
Pin Number
e
r
P
C
Functional Block Diagram
GND
PAE>28% @802.11g linear power
Pin Details
Major Applications
RF IN
• Ultra High Efficiency:
AP1098
2.4~2.5 GHz Power Amplifier
2004.07.19 Preliminary
Electrical Characteristics
Under Vc=3.3V, Vref=3V, Ta=25ºC
Parameter
Symbol
Test conditions
Freq.
f
Total current
Icc
@ Pout=19dBm, 64QAM/54Mbps
@ Pout=23dBm, CCK/11Mbps
85
165
mA
Bias control
reference current
Iref
@Icq=25mA
0.7
mA
Power Gain
Gp
@ Pout=19dBm, 64QAM/54Mbps
25
dB
Quiescent current
Icq
25
mA
EVM at Output
power 19dBm
EVM
Output VSWR
I
F
R
PAE @ linear
power
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2.5
GHz
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a
@Pout=23dBm, CCK/11Mbps
-36
dBc
-56
dBc
@Pout=19dBm, 64QAM/54Mbps
@Pout=23dBm, CCK/11Mbps
Absolute Maximum Ratings
%
2
2.5
28
37
%
Important Note:
Rating
Unit
DC Power Supply For
Collector
+5
V
DC Supply Current For
Collector
280
mA
RF Input Power
+5
dBm
Operating Ambient
Temperature
-40 to +85
°C
Storage Temperature
-40 to +125
°C
The information provided in this datasheet is
deemed to be accurate and reliable only at present
time. RF Integrated Corp. reserves the right to make
any changes to the specifications in this datasheet
without prior notice.
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: [email protected]
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
2 of 5
AP1098
Parameter
For more information,please contact us at:
Unit
3
e
r
P
C
PAE
Max.
@ Pout=19dBm, 64QAM/54Mbps
@Pout=23dBm, CCK/11Mbps
Input VSWR
Typ.
2.4
802.11b ACP-1st
Side Lobe
802.11b ACP-2nd
Side Lobe
Min.
AP1098
2.4~2.5 GHz Power Amplifier
2004.07.19 Preliminary
Data Charts
Fig. 1
Fig. 2
EVM & Icc vs. Pout (dBm)@3.3V
Gain, EVM,PAE vs Pout
54Mbps OFDM Signal)
4
60
3
40
2
20
1
0
0
10
11
12
13
14
15
16
17
18
19
7
30
6
25
5
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20
4
15
3
10
2
5
1
0
20
10
Pout (dBm)
Icc(mA)@Vc=3.3V
35
e
r
P
C
EVM(%)@Vc=3.3V, Uncorrected Signal Source (Source EVM
~0.8%)
11
12
13
I
F
R
0.80
0.60
0.00
13 14 15 16 17 18 19 20 21 22 23 24 25 26
Output Power (dBm)
Vdec(V)@3.3V
For more information,please contact us at:
17
18
19
0
20
EVM(%
)
Gain(dB)
Fig. 4
Gain, ACP, PAE, Icc vs Pout_3.3V
(With 11b CCK Modulation)
70
65
60
55
50
45
40
35
30
25
20
15
10
280
260
240
220
200
180
160
140
120
100
80
60
40
17
18
19
20
21
22
23
24
25
Pout (dBm)
1st sidelobe
PAE
2nd sidelobe
Icc
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: [email protected]
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
3 of 5
AP1098
0.40
0.20
ACP(dBc), Gain (dB) &PAE(%)
Detector Output (V)
1.20
1.00
16
PAE(%)
Detector Output vs. Output Power
1.40
15
Pout(dB
m)
Fig. 3
1.60
14
Icc (mA)
80
Gain (dB) & PAE (%)
5
EVM(%)
Icc(mA)
100
EVM(%)
(Vc1=Vc2=Vcc_bias=3.3V, Vref=3V, f=2.447GHz,
AP1098
2.4~2.5 GHz Power Amplifier
2004.07.19 Preliminary
Data Charts
25
Fig.5
Fig. 6
Power Gain vs.
Frequency
Input Return Loss vs. Frequency
0
24
-2
22
-4
21
-6
dB (S11)
Power Gain (dB)
23
20
19
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-8
-10
18
17
-12
16
-14
15
2
2.12
2.24
2.36
2.48
2.6
2.72
2.84
2.96
Frequency (MHz)
e
r
P
C
Gain(dB)@Pout~19dBm, Vc=3.3V
2.00
2.13
2.26
I
F
R
2.78
2.91
Reverse Isolation vs. Frequency
-45
-46
-47
dB (S12)
dB (S22)
-4
2.65
Fig. 8
Output Return Loss vs. Frequency
-2
2.52
Frequency (GHz)
Fig. 7
0
2.39
-6
-49
-50
-10
-51
-12
-52
2
2.12
2.24
2.36
2.48
2.6
Frequency (GHz)
For more information,please contact us at:
2.72
2.84
2.96
2
2.12
2.24
2.36
2.48
2.6
2.72
2.84
2.96
Frequency (MHz)
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: [email protected]m
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
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AP1098
-8
-48
AP1098
2.4~2.5 GHz Power Amplifier
2004.07.19 Preliminary
Package Outline
Top View
Bottom View
3.00 + 0.1
1.50
e
r
P
C
1.50
Unit: mm
0.25
0.50
0.0 ~ 0.05
C
0.5 TYP.
0.75 MAX.
Side View
SEATING PLANE
0.23 TYP.
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0.5TYP.
MARKING
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0.23 TYP.
0.40
3.00 + 0.1
0.40
AP1098
Note:
1.
Dimension and tolerance conform to ASME Y14.5M1994.
2.
Refer to JEDEC STD. MO-220 WEED-2 ISSUE B
For more detailed information, please refer to AP1098 Application Note.
For more information,please contact us at:
© 2003 RF Integrated Corporation. All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: [email protected]
RF integrated Corp. reserves the right to make any changes to the specifications without notice.
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