NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE(on) 2.1 V @ IC = 10 A, VGE 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. • Ideal for Coil−on−Plug Applications • DPAK Package Offers Smaller Footprint and Increased Board Space • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) C RG G RGE E 4 DPAK CASE 369C STYLE 2 1 2 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCES 440 VDC Collector−Gate Voltage VCER 440 VDC Gate−Emitter Voltage VGE 15 VDC IC 15 50 ADC AAC Rating Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V PD 107 0.71 Watts W/°C −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range 4 1 2 3 4 kV TO−220AB CASE 221A STYLE 9 8.0 TJ, Tstg D2PAK CASE 418B STYLE 4 1 2 3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking section on page 8 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 March, 2004 − Rev. 5 1 Publication Order Number: NGD15N41CL/D NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Symbol Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TJ = 125°C Value Unit EAS mJ 250 200 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJC 1.4 °C/W DPAK (Note 1) RθJA 100 D2PAK RθJA 50 RθJA 62.5 TL 275 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) TO−220 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds °C ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40 −40°C C to 150°C 380 410 440 VDC IC = 10 mA TJ = −40°C to 150°C 380 410 440 TJ = 25°C − 2.0 20 TJ = 150°C − 10 40* TJ = −40°C − 1.0 10 TJ = 25°C − 0.7 2.0 TJ = 150°C − 12 25* TJ = −40°C − 0.1 1.0 TJ = 25°C 27 33 37 TJ = 150°C 30 36 40 TJ = −40°C 25 31 35 OFF CHARACTERISTICS Collector−Emitter Clamp Clam Voltage Zero Gate Voltage g Collector Current ICES VCE = 350 V V, VGE = 0 V Reverse Collector−Emitter Leakage g Current IECS VCE = −24 24 V Reverse Collector−Emitter Clamp Voltage g BVCES(R) IC = −75 75 mA A Gate−Emitter Clamp Voltage µADC µ mA VDC BVGES IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC IGES VGE = 10 V TJ = −40°C to 150°C 384 640 1000 µADC Gate Resistor (Optional) RG − TJ = −40°C to 150°C − 70 − Ω Gate Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kΩ TJ = 25°C 1.1 1.4 1.9 VDC TJ = 150°C 0.75 1.0 1.4 TJ = −40°C 1.2 1.6 2.1* − − 3.4 − Gate−Emitter Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage g VGE(th) IC = 1 1.0 0 mA, A VGE = VCE Threshold Temperature Coefficient (Negative) − − 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 2 mV/°C NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.0 1.6 1.8 VDC TJ = 150°C 0.9 1.5 1.8 TJ = −40°C 1.1 1.65 1.9* TJ = 25°C 1.3 1.8 2.0* TJ = 150°C 1.2 1.7 1.9 TJ = −40°C 1.4 1.8 2.0* TJ = 25°C 1.4 2.0 2.2 TJ = 150°C 1.5 2.0 2.3* TJ = −40°C 1.4 2.0 2.2 TJ = 25°C 1.3 1.9 2.1 TJ = 150°C 1.3 1.9 2.1 ON CHARACTERISTICS (continued) (Note 3) Collector−to−Emitter On−Voltage g VCE(on) IC = 6 6.0 0A A, VGE = 4.0 V IC = 8 8.0 0A A, VGE = 4.0 V IC = 10 A A, VGE = 4.0 V IC = 10 A A, VGE = 4.5 V Forward Transconductance gfs TJ = −40°C 1.4 1.95 2.1* VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 15 25 Mhos 400 650 1000 pF VCC = 25 V V, VGE = 0 V f = 1.0 MHz TJ = −40°C 40°C to 150°C DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS 30 55 100 3.0 4.5 8.0 TJ = 25°C − 4.0 10 TJ = 150°C − 4.5 10 TJ = 25°C − 6.0 12 TJ = 150°C − 10 12 SWITCHING CHARACTERISTICS Turn−Off Delayy Time (Inductive) ( ) Fall Time (Inductive) ( ) Turn−Off Delayy Time (Resistive) ( ) Fall Time ((Resistive)) Turn−On Delay y Time Rise Time td(off) VCC = 300 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ L = 300 µH H tf VCC = 300 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ L = 300 µH H td(off) VCC = 300 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ RL = 46 Ω, Ω tf VCC = 300 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ RL = 46 Ω, Ω td(on) VCC = 10 V,, IC = 6.5 A 1 0 kΩ, kΩ RL = 1 5Ω RG = 1.0 1.5 tr VCC = 10 V,, IC = 6.5 A RG = 1.0 1 0 kΩ, kΩ RL = 1 1.5 5Ω 3. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 3 TJ = 25°C − 3.0 10 TJ = 150°C − 3.5 10 TJ = 25°C − 8.0 15 TJ = 150°C − 12 15 TJ = 25°C − 0.7 4.0 TJ = 150°C − 0.7 4.0 TJ = 25°C − 4.0 7.0 TJ = 150°C − 5.0 7.0 µSec µ µSec µ µSec µ NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 VGE = 10 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 60 5V 50 4.5 V 40 4V 30 TJ = 25°C 3.5 V 20 3V 10 2.5 V 0 4.5 V 50 5V 4V 40 30 1 2 3 4 5 7 6 8 20 3V 10 2.5 V 1 0 3 2 5 4 7 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics Figure 2. Output Characteristics 30 IC, COLLECTOR CURRENT (AMPS) 60 VGE = 10 V 50 5V 4.5 V TJ = 150°C 40 4V 3.5 V 30 3V 20 2.5 V 10 VCE = 10 V 25 20 15 10 TJ = 25°C 5 TJ = 150°C TJ = −40°C 0 0 0 1 2 3 4 5 7 6 0 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3.5 IC = 25 A 3.0 IC = 20 A 2.5 IC = 15 A 2.0 IC = 10 A 1.5 IC = 5 A 1.0 0.5 0.0 −50 −25 0 25 50 75 100 1 1.5 2 2.5 3 3.5 4 4.5 5 Figure 4. Transfer Characteristics 4.0 VGE = 5 V 0.5 VGE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3.5 V TJ = −40°C 0 0 IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 125 150 3 TJ = 25°C 2.5 IC = 15 A IC = 10 A 2 IC = 5 A 1.5 1 0.5 0 3 4 TJ, JUNCTION TEMPERATURE (°C) 5 6 7 8 9 GATE TO EMITTER VOLTAGE (VOLTS) Figure 5. Collector−to−Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage http://onsemi.com 4 10 10000 3 TJ = 150°C IC = 15 A 2.5 C, CAPACITANCE (pF) COLLECTOR TO EMITTER VOLTAGE (VOLTS) NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL IC = 10 A 2 IC = 5 A 1.5 1 0.5 3 4 5 6 7 8 Coss 10 Crss 1 0 10 9 20 40 60 80 100 120 140 160 180 200 GATE TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage Figure 8. Capacitance Variation 30 1.8 Mean + 4 σ Mean IL, LATCH CURRENT (AMPS) THRESHOLD VOLTAGE (VOLTS) 100 0 0 2 1.6 1.4 Mean − 4 σ 1.2 1 0.8 0.6 0.4 VCC = 50 V VGE = 5 V RG = 1000 Ω 25 20 L = 2 mH L = 3 mH 15 10 L = 6 mH 5 0.2 0 −50 −30 −10 10 30 50 70 90 0 −50 −25 110 130 150 0 25 50 75 100 125 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. Gate Threshold Voltage versus Temperature Figure 10. Minimum Open Secondary Latch Current versus Temperature 175 12 30 VCC = 50 V VGE = 5 V RG = 1000 Ω 20 10 SWITCHING TIME (µs) 25 IL, LATCH CURRENT (AMPS) Ciss 1000 L = 2 mH 15 L = 3 mH 10 L = 6 mH 8 VCC = 300 V VGE = 5 V RG = 1000 Ω IC = 10 A L = 300 µH tf 6 td(off) 4 2 5 0 −50 −25 0 25 50 75 100 125 150 0 −50 −30 −10 175 10 30 50 70 90 110 130 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 11. Typical Open Secondary Latch Current versus Temperature Figure 12. Inductive Switching Fall Time versus Temperature http://onsemi.com 5 NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 10 Duty Cycle = 0.5 0.2 1 0.1 0.05 0.02 0.1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 P(pk) t1 Single Pulse t2 TJ(pk) − TA = P(pk) RθJA(t) RθJC ≅ R(t) for t ≤ 0.2 s DUTY CYCLE, D = t1/t2 0.01 0.00001 0.0001 0.001 0.1 0.01 1 10 t,TIME (S) Figure 13. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on fixture in Figure 14) 1.5″ 4″ 4″ 0.125″ 4″ Figure 14. Test Fixture for Transient Thermal Curve (48 square inches of 1/8 thick aluminum) http://onsemi.com 6 100 1000 NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 DC 10 100 µs 1 ms 1 10 ms 100 ms 0.1 0.01 1 10 100 100 µs 0.1 1 ms 10 ms 100 ms 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 25C) Figure 16. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 125C) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 1 COLLECTOR−EMITTER VOLTAGE (VOLTS) t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 I(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.01 1 DC 0.01 1 1000 100 0.1 10 10 100 t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 I(pk) t1 0.1 t2 DUTY CYCLE, D = t1/t2 0.01 1 1000 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 17. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 25C) Figure 18. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 125C) http://onsemi.com 7 NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL ORDERING INFORMATION Device Package Type Shipping NGD15N41CL DPAK 75 Units/Rail NGD15N41CLT4 DPAK 2500/Tape & Reel NGB15N41CLT4 D2PAK 800/Tape & Reel NGP15N41CL TO−220 50 Units/Rail MARKING DIAGRAMS D2PAK CASE 418B STYLE 4 DPAK CASE 369C STYLE 7 3 Emitter 4 Collector 4 Collector 1 Gate 2 Collector TO−220AB CASE 221A STYLE 9 Gx15N41 YWW 4 Collector Gx15N41 YWW 1 Gate 2 Collector Gx15N41 x Y WW Gx15N41 YWW 3 Emitter = Device Code = D, B, or P = Year = Work Week http://onsemi.com 8 1 Gate 3 Emitter 2 Collector NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA SEATING PLANE −T− B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 9: PIN 1. 2. 3. 4. http://onsemi.com 9 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− C B V SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 10 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− K SEATING PLANE W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R M STYLE 4: PIN 1. 2. 3. 4. P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 6.096 0.24 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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