INFINEON HYM328000GD-50

8M × 32-Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE
HYM 328000GD-50/-60
Preliminary Information
•
8 388 608 words by 32-bit organization
•
Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
•
Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
•
Single + 3.3 V (± 0.3 V) supply
•
Low power dissipation
max. 2016 mW active (-50 version)
max. 1728 mW active (-60 version)
LVCMOS – 3.6 mW standby
LVTTL – 28.8 mW standby
•
CAS-before-RAS refresh, RAS-only-refresh, Self Refresh
•
4 decoupling capacitors mounted on substrate
•
All inputs, outputs and clock fully TTL compatible
•
72 pin, dual read-out, one bank, Small Outline DIMM Module
•
Utilizes four 8M × 8 -DRAMs (HYB 3165800T)
•
4096 refresh cycles / 64 ms
•
Gold contact pad
Semiconductor Group
187
11.94
HYM328000GD-50/-60
8M x 32 SO-DIMM
The HYM 328000GD -50/-60 is a 32 MByte DRAM module organized as 8 388 608 words by 32-bit
in a 72-pin, dual read-out, small outline package comprising four HYB 3165800T 8M × 8 DRAMs
in 500 mil wide TSOPII-34 - packages mounted together with four 0.2 µF ceramic decoupling
capacitors on a PC board. Each HYB 3165800T is described in the data sheet and is fully
electrically tested and processed according to Siemens standard quality procedure prior to module
assembly. After assembly onto the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
These modules are ideal for portable systems applications where high memory capacity is needed.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYM 328000GD -50
on request
L-DIM-72-2
50 ns DRAM module
HYM 328000GD -60
on request
L-DIM-72-2
60 ns DRAM module
Pin Names
A0-A11
A0-A10
DQ0 - DQ31
RAS0, RAS2
CAS0 - CAS3
WE
Vcc
Vss
PD1 - PD7
N.C.
Row Address Input
Column Address Inputs
Data Input/Output
Row Address Strobe
Column Address Strobe
Read / Write Input
Power (+3.3 Volt)
Ground
Presence Detect Pins
No Connection
Presence-Detect and ID-pin Thruth Table *:
Module
PD1
PD2
PD3
PD4
PD5
PD6
PD7
HYM 328000GD -50
VSS
VSS
NC
NC
VSS
VSS
NC
HYM 328000GD -60
VSS
VSS
NC
NC
NC
NC
NC
note: PD1 .. PD4 : configuration
PD5 .. PD6 : speed
PD7
: refresh mode (NC = normal refresh)
* acccording to JEDEC letter ballot JC-42.5-95 Item #646/651
Semiconductor Group
188
HYM328000GD-50/-60
8M x 32 SO-DIMM
Pin Configuration
PIN
Name
PIN
NAME
PIN
NAME
PIN
NAME
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
VSS
DQ1
DQ3
DQ5
DQ7
PD1
A1
A3
A5
A10
DQ8
DQ10
DQ12
DQ14
A11
A8
NC
DQ15
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
DQ16
VSS
CAS2
CAS1
NC
WRITE
DQ18
DQ20
DQ22
NC
DQ25
DQ28
VCC
DQ30
NC
PD3
PD5
PD7
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
DQ0
DQ2
DQ4
DQ6
VCC
A0
A2
A4
A6
NC
DQ9
DQ11
DQ13
A7
VCC
A9
RAS2
NC
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
DQ17
CAS0
CAS3
RAS0
NC
NC
DQ19
DQ21
DQ23
DQ24
DQ26
DQ27
DQ29
DQ31
PD2
PD4
PD6
VSS
Front Side
Semiconductor Group
Back Side
189
Pin2
Pin1
Pin72
Pin71
HYM328000GD-50/-60
8M x 32 SO-DIMM
RAS0
RAS
CAS0
I/O1-I/O8
CAS
OE
D1
RAS
CAS1
DQ0-DQ7
I/O1-I/O8
DQ8-DQ15
CAS
OE
D2
RAS2
RAS
CAS2
I/O1-I/O8
CAS
OE
D3
RAS
CAS3
I/O1-I/O8
CAS
OE
WE
A0-A11
VCC
D4
D1 - D4
D1 - D4
C1-C4
D1 - D4
VSS
Block Diagramm
Semiconductor Group
DQ16-DQ23
190
DQ24-DQ32
HYM328000GD-50/-60
8M x 32 SO-DIMM
Absolute Maximum Ratings 1)
Operating temperature range..............................................................................................0 to 70 ˚C
Storage temperature range.........................................................................................– 55 to 150 ˚C
Soldering temperature.............................................................................................................260 ˚C
Soldering time..............................................................................................................................10 s
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
DC Characteristics
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V
Parameter
Symbol
Limit Values
min.
max.
Unit Note
Input high voltage
VIH
2.0
Vcc+0.3
V
2)
Input low voltage
VIL
– 0.3
0.8
V
2)
Output high voltage (LVTTL)
Output „H“ level voltage (Iout = -2mA)
VOH
2.4
–
V
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
VOL
–
0.4
V
Output high voltage (LVCMOS)
Output „H“ level voltage (Iout = -100uA)
VOH
Vcc-0.2 -
V
6)
Ouput low voltage (LVCMOS)
Output „L“ level voltage (Iout = +100uA)
VOL
-
0.2
V
6)
Input leakage current,any input
II(L)
– 10
10
µA
IO(L)
– 10
10
µA
–
–
560
480
mA
mA
3) 4) 5)
ICC2
–
8
mA
–
ICC3
Average Vcc supply current, during RAS-only
refresh cycles:
-50 ns version
-60 ns version
–
–
560
480
mA
mA
3) 5)
(0 V < Vin < Vcc , all other pins = 0 V
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
Average Vcc supply current:
ICC1
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS= Vih)
(RAS cycling: CAS = VIH: tRC = tRC min.)
Semiconductor Group
191
HYM328000GD-50/-60
8M x 32 SO-DIMM
DC Characteristics (cont’d)
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V
Parameter
Symbol
Limit Values
Unit Note
min.
max.
–
–
340
300
mA
mA
3) 4) 5)
ICC5
–
800
A
–
Average Vcc supply current, during CAS-before- ICC6
RAS refresh mode:
-50 ns version
-60 ns version
–
–
560
480
mA
mA
3) 4)
–
800
A
Average Vcc supply current,
during fast page mode:
ICC4
-50 ns version
-60 ns version
(RAS = VIL, CAS, address cycling: tPC=tPC min.)
Standby Vcc supply current
(RAS=CAS= Vcc-0.2V)
(RAS, CAS cycling: tRC = tRC min.)
ICC7
Self Refresh Current
Average Power Supply Current during Self Refresh.
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
Semiconductor Group
192
HYM328000GD-50/-60
8M x 32 SO-DIMM
SO-DIMM PACKAGE OUTLINES
56.69
3.81
25.40
17.78
FRONT SIDE
1
71
E
44.45
7.62
R 2.0
1.0 +/- 0.1
8.255
2
72
R 2.0
BACK SIDE
1.0
note:
mechanical key for supply voltage
5 V E = 6.35
3.3V E = 3.175
1.27
L-DIM-72-2
Preliminary Drawing
Semiconductor Group
193
VAKAT
((194))