PHILIPS BUW85

DISCRETE SEMICONDUCTORS
DATA SHEET
BUW84; BUW85
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
BUW84; BUW85
PINNING
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT82 package.
PIN
APPLICATIONS
DESCRIPTION
1
base
2
collector; connected to mounting base
3
emitter
• Converters
• Inverters
ok, halfpage
• Switching regulators
• Motor control systems
• Switching applications.
2
1
3
MBB008
1
2
3
MBK107
Fig.1 Simplified outline (SOT82) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
PARAMETER
CONDITIONS
collector-emitter peak voltage
TYP.
MAX.
UNIT
VBE = 0
BUW84
−
800
V
BUW85
−
1000
V
BUW84
−
400
V
BUW85
−
450
V
collector-emitter voltage
open base
VCEsat
collector-emitter saturation voltage
IC = 1 A; IB = 200 mA; see Fig.7
−
1
V
IC
collector current (DC)
see Figs 4 and 5
−
2
A
ICM
collector current (peak value)
see Figs 4 and 5
−
3
A
Ptot
total power dissipation
Tmb ≤ 25 °C; see Fig.8
−
50
W
tf
fall time
resistive load; see Fig.11
0.4
−
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
2.1
K/W
Rth j-a
thermal resistance from junction to ambient in free air
100
K/W
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCESM
collector-emitter peak voltage
VCEO
CONDITIONS
MIN.
MAX.
UNIT
VBE = 0
BUW84
−
800
V
BUW85
−
1000
V
BUW84
−
400
V
BUW85
−
450
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
see Figs 4 and 5
−
2
A
ICM
collector current (peak value)
tp = 2 ms; see Figs 4 and 5
−
3
A
IB
base current (DC)
−
0.75
A
IBM
base current (peak value)
−
1
A
IBM
base current (reversed; peak value) turn-off current
−
−1
A
Ptot
total power dissipation
−
50
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tmb ≤ 25 °C; see Fig.8
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VCEOsust
PARAMETER
collector-emitter sustaining voltage
BUW84
CONDITIONS
IC = 100 mA; IBoff = 0;
L = 25 mH; see Figs 2 and 3
collector-emitter saturation voltage
400
TYP.
−
MAX.
UNIT
−
V
450
−
−
V
IC = 0.3 A; IB = 30 mA;
see Fig.7
−
−
0.8
V
IC = 1 A; IB = 200 mA;
see Fig.7
−
−
1
V
BUW85
VCEsat
MIN.
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 200 mA
−
−
1.1
V
ICES
collector-emitter cut-off current
VCEM = VCEMSmax; VBE = 0;
note 1
−
−
200
µA
VCEM = VCEMSmax; VBE = 0;
Tj = 125 °C; note 1
−
−
1.5
mA
−
mA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
1
hFE
DC current gain
VCE = 5 V; IC = 5 A; see Fig.10 15
−
−
VCE = 5 V; IC = 100 mA;
see Fig.10
20
50
100
VCE = 10 V; IC = 200 mA;
f = 1 MHz
−
20
−
fT
transition frequency
1997 Aug 14
2
MHz
Philips Semiconductors
Product specification
Silicon diffused power transistors
SYMBOL
PARAMETER
BUW84; BUW85
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switching times in horizontal deflection circuit (see Fig.11)
ton
turn-on time
ICon = 1 A; IBon = 200 mA;
IBoff = −400 mA; VCC = 250 V
−
0.2
0.5
µs
ts
storage time
ICon = 1 A; IBon = 200 mA;
IBoff = −400 mA; VCC = 250 V
−
2
3.5
µs
tf
fall time
ICon = 1 A; IBon = 200 mA;
IBoff = −400 mA; VCC = 250 V
−
0.4
−
µs
ICon = 1 A; IBon = 200 mA;
IBoff = −400 mA; VCC = 250 V;
Tmb = 95 °C
−
−
1.4
µs
Note
1. Measured with a half-sinewave voltage (curve tracer).
handbook, halfpage
handbook,IC
halfpage
+ 50 V
MGE239
(mA)
100 to 200 Ω
250
L
200
horizontal
oscilloscope
100
vertical
6V
30 to 60 Hz
Fig.2
1997 Aug 14
300 Ω
0
1Ω
MGE252
Test circuit for collector-emitter
sustaining voltage.
Fig.3
3
VCE (V)
min
VCEOsust
Oscilloscope display for collector-emitter
sustaining voltage.
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, full pagewidth
BUW84; BUW85
MGB938
10
IC
(A)
δ = 0.01
ICM max
tp =
20 µs
IC max
(1)
1
50 µs
II
100 µs
200 µs
500 µs
(2)
10−1
1 ms
2 ms
5 ms
10 ms
DC
I
10−2
III
IV
10−3
10
102
103
VCE (V)
104
BUW84.
Tmb ≤ 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.
IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms.
(1) Ptot max line.
(2) Second breakdown limits.
Fig.4 Forward bias SOAR.
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, full pagewidth
BUW84; BUW85
MGB937
10
IC
(A)
δ = 0.01
ICM max
tp =
10 µs
IC max
20 µs
(1)
1
50 µs
II
100 µs
200 µs
500 µs
(2)
10−1
1 ms
2 ms
I
5 ms
10 ms
DC
10−2
III
IV
10−3
10
102
103
VCE (V)
104
BUW85.
Tmb ≤ 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.
IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms.
(1) Ptot max line.
(2) Second breakdown limits.
Fig.5 Forward bias SOAR.
1997 Aug 14
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
MGB865
10
handbook, full pagewidth
Zth j−mb
(K/W)
δ=1
0.75
0.50
1
0.33
0.20
0.10
10−1
0.05
0.02
0.01
0
δ=
P
tp
T
t
tp
T
10−2
10−2
10−1
1
10
102
103
104
tp (ms)
Fig.6 Transient thermal impedance.
(1)
(2)
(3)
(4)
MGB908
4
handbook, full pagewidth
VCEsat
(V)
3
2
1
0
0
(1) IC = 0.3 A.
0.05
(2) IC = 0.5 A.
0.1
(3) IC = 0.7 A.
0.15
(4) IC = 1 A.
0.2
0.25
IB (A)
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.7 Collector-emitter saturation voltage as a function of base current; typical values.
1997 Aug 14
6
0.3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
MGB904
MGD283
1.0
120
handbook,
halfpage
handbook, halfpage
Ptot max
VBEsat
(V)
(%)
(1)
(2)
(3)
80
0.75
40
0.5
0
0
50
100
Tmb
(oC)
150
0
100
200
300
IB (mA)
Tj = 25 °C.
(1) IC = 1 A.
(2) IC = 0.5 A.
(3) IC = 0.3 A.
Fig.9
Fig.8 Power derating curve.
Base-emitter saturation voltage as a
function of emitter current; typical values.
handbook, halfpage
MGB879
102
handbook, halfpage
MBB731
tr ≤30 ns
IB on
90%
IB
10%
hFE
t
typ
IB off
10
IC on
90%
IC
10%
1
10−2
10−1
1
IC (A)
10
ton
t
Fig.11 Switching time waveforms with
resistive load.
Fig.10 DC current gain; typical values.
1997 Aug 14
tf
ts
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
+25 V
handbook, full pagewidth
BD139
200
Ω
680
µF
T
250
Ω
100
µF
100 Ω
VIM
D.U.T.
tp
Vi
100
Ω
30 Ω
MGE253
50
Ω
BD140
680
µF
Fig.12 Test circuit resistive load.
1997 Aug 14
VCC
250V
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
PACKAGE OUTLINE
Plastic single-ended package; 3 leads (in-line)
SOT82
E
A
q
P
D
L1
Q
L
1
2
3
c
w M
b
e
e1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
b
c
D
E
e
e1
L
L1
max.
P
Q
q
w
mm
2.8
2.3
0.88
0.65
0.58
0.47
11.1
10.5
7.8
7.2
2.29
4.58
16.5
15.3
2.54
3.1
2.5
1.5
0.9
3.9
3.5
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for body and terminal irregularities.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-06-11
SOT82
1997 Aug 14
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 14
10
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 14
Document order number:
9397 750 02722