STMICROELECTRONICS BULK118

BULK118
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
■
■
BULK118 IS REVERSE PINS OUT Vs
STANDARD SOT-82 PACKAGE AND SAME
PINS OUT Vs BULT118 (SOT-32 PACKAGE)
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The devices are manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The devices are designed for use in lighting
applications and low cost switch-mode power
supplies.
SOT-82
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
700
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
2
A
Collector Peak Current (t p < 5 ms)
4
A
Base Current
1
A
I BM
Base Peak Current (t p < 5 ms)
2
A
P tot
Total Dissipation at T c = 25 o C
T stg
Storage Temperature
IC
I CM
IB
Tj
Max. Operating Junction Temperature
September 2003
45
W
-65 to 150
o
C
150
o
C
1/7
BULK118
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
2.77
80
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 700 V
V CE = 700 V
V EBO
Emitter-Base Voltage
I E = 10 mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
L = 25 mH
Unit
100
500
µA
µA
9
V
400
V
I B = 0.1 A
I B = 0.2 A
I B = 0.4 A
0.5
1
1.5
V
V
V
I C = 0.5 A
IC = 1 A
IC = 2 A
I B = 0.1 A
I B = 0.2 A
I B = 0.4 A
1.0
1.2
1.3
V
V
V
I C = 10 mA
I C = 0.5 A
IC = 2 A
V CE = 5 V
V CE = 5 V
V CE = 5 V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
IC = 2 A
V BE(sat) ∗
Base-Emitter
Saturation Voltage
DC Current Gain
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
V CC = 125 V
I B1 = 0.2 A
IC = 1 A
I B2 = -0.2 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1 A
V BE = -5 V
V clamp = 300 V
I B1 = 0.2 A
L = 50 mH
∗ Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
2/7
T j = 125 o C
Max.
µA
V CE = 400 V
h FE ∗
Typ.
250
Collector-Emitter
Leakage Current
I CEO
Min.
10
10
8
50
0.4
3.2
0.25
0.8
0.16
0.7
4.5
0.4
µs
µs
µs
µs
µs
BULK118
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BULK118
Inductive Load Fall Time
Inductive Load Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/7
BULK118
Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
BULK118
SOT-82 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.444
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.04
0.106
c1
1.0
1.3
0.039
0.05
D
15.4
16
0.606
0.629
e
e3
2.2
0.087
4.15
4.65
F
0.163
0.183
3.8
0.150
H
2.54
H2
0.100
2.15
0.084
C
B
F
A
D
H
H2
c1
b
e
b1
e3
6/7
P032A
BULK118
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
7/7