Order this document by MTIL113/D SEMICONDUCTOR TECHNICAL DATA STYLE 1 PLASTIC The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents. • Higher Sensitivity to Low Input Drive Current • Meets or Exceeds All JEDEC Registered Specifications 6 1 Applications • Low Power Logic Circuits • Interfacing and coupling systems of different potentials and impedances • Telecommunications Equipment • Portable Electronics • Solid State Relays STANDARD THRU HOLE SCHEMATIC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating 1 6 2 5 3 Symbol Value 4 Unit INPUT LED Reverse Voltage VR 3 Volts Forward Current — Continuous IF 60 mA LED Power Dissipation @ TA = 25°C Derate above 25°C PD 100 1.41 mW mW/°C Collector–Emitter Voltage VCEO 30 Volts Emitter–Collector Voltage VECO 5 Volts Collector–Base Voltage PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE OUTPUT DETECTOR VCBO 30 Volts Collector Current — Continuous IC 125 mA Detector Power Dissipation @ TA = 25°C Derate above 25°C PD 150 1.76 mW mW/°C VISO 7500 Vac(pk) Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Ambient Operating Temperature Range(3) TA – 55 to +100 °C Tstg – 55 to +150 °C TL 260 °C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16″ from case) 1. All Motorola 6–Pin devices exceed JEDEC specification and are 7500 Vac(pk). 2. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Motorola Device Data Motorola, Inc.Optoelectronics 1997 1 MTIL113 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Symbol Min Typ(1) Max Unit Reverse Leakage Current (VR = 3 V, RL = 1 M ohms) IR — 0.05 100 µA Forward Voltage (IF = 10 mA) VF — 1.34 1.5 Volts Capacitance (VR = 0 V, f = 1 MHz) C — 1.8 — pF ICEO — — 100 nA Collector–Base Breakdown Voltage (IC = 100 µA, IE = 0) V(BR)CBO 30 — — Volts Collector–Emitter Breakdown Voltage (IC = 100 µA, IB = 0) V(BR)CEO 30 — — Volts Emitter–Collector Breakdown Voltage (IE = 100 µA, IB = 0) V(BR)ECO 5 — — Volts hFE — 16K — — IC (CTR)(2) 30 (300) — — mA (%) Isolation Surge Voltage(4,5) (60 Hz ac Peak, 1 Second) VISO 7500 — — Vac(pk) Isolation Resistance(4) (V = 500 V) RISO — 1011 — Ohms VCE(sat) — — 1.25 Volts CISO — 0.2 — pF Turn–On Time(6) (IC = 50 mA, IF = 200 mA, VCC = 10 V) ton — 0.6 5 µs Turn–Off Time(6) (IC = 50 mA, IF = 200 mA, VCC = 10 V) toff — 45 100 µs Characteristic INPUT LED OUTPUT DETECTOR (TA = 25°C and IF = 0, unless otherwise noted) Collector–Emitter Dark Current (VCE = 10 V, Base Open) DC Current Gain (VCE = 5 V, IC = 500 µA) COUPLED (TA = 25°C unless otherwise noted) Collector Output Current (3) (VCE = 1 V, IF = 10 mA) Collector–Emitter Saturation Voltage(3) (IC = 2 mA, IF = 8 mA) Isolation Capacitance(4) (V = 0 V, f = 1 MHz) 1. 2. 3. 4. 5. 6. Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. For test circuit setup and waveforms, refer to Figures 8 and 9. p 1.4 1.2 NCTR CE, NORMALIZED CTR CE V F , FORWARD VOLTAGE (V) 1.3 TA = –55°C 1.2 1.1 TA = 25°C 1.0 TA = 100°C 0.9 0.8 0.8 VCE = 5.0 V 0.6 0.4 0.2 VCE = 1.0 V 0.7 0 0.1 1.0 10 100 IF, FORWARD CURRENT (mA) Figure 1. Forward Voltage versus Forward Current 2 NORMALIZED TO: VCE = 5.0 V IF = 10 mA TA = 25°C 1.0 0.1 1.0 10 100 1000 IF, LED CURRENT (mA) Figure 2. Normalized Non–Saturated and Saturated CTRce versus LED Current Motorola Optoelectronics Device Data MTIL113 1.0 10 NORMALIZED TO: VCE = 5.0 V IF = 10 mA TA = 25°C NORMALIZED TO: VCB = 3.5 V IF = 10 mA TA = 25°C VCE = 5.0 V 1.0 NI CB, NORMALIZED I CB NI CE, NORMALIZED I CE 10 VCE = 1.0 V 0.1 0.01 0.001 0.1 0.01 0.001 0.1 10 1.0 100 1.0 0.1 IF, LED CURRENT (mA) Figure 4. Normalized Collector–Base Photocurrent versus LED Current H FE , FORWARD TRANSFER GAIN TA = 25°C tp LH , LOW/HIGH PROPAGATION DELAY ( m s) 10,000 VCE = 5.0 V 8000 6000 4000 VCE = 1.0 V 2000 0 0.1 1.0 10 80 TA = 25°C VCC = 5.0 V VTH = 1.5 V 60 1.0 KW 220 W 40 470 W 20 100 W 0 100 0 10 5.0 IB, BASE CURRENT (mA) 15 20 IF, LED CURRENT (mA) Figure 5. Non–Saturated and Saturated HFE versus Base Current tp HL , HIGH/LOW PROPAGATION DELAY (m s) 100 IF, LED CURRENT (mA) Figure 3. Normalized Non–Saturated and Saturated Collector–Emitter Current versus LED Current 0.01 10 20 Figure 6. Low to High Propagation Delay versus Collector Load Resistance and LED Current 1.0 KW TA = 25°C VCC = 5.0 V VTH = 1.5 V 15 10 100 W 5.0 0 0 5.0 10 15 20 IF, LED CURRENT (mA) Figure 7. High to Low Propagation Delay versus Collector Load Resistance and LED Current Motorola Optoelectronics Device Data 3 MTIL113 IF VCC RL VO tD VO tR IF tPLH VTH = 1.5 V tPHL tS tF Figure 8. Switching Waveform Figure 9. Switching Schematic Package Dimensions in Inches (mm) 3 2 1 4 5 6 PIN ONE ID. 0.248 (6.30) 0.256 (6.50) ANODE 1 6 BASE CATHODE 2 5 COLLECTOR NC 3 4 EMITTER 0.335 (8.50) 0.343 (8.70) 0.300 (7.62) typ. 0.039 (1.00) min. 0.130 (3.30) 0.150 (3.81) 4_ typ. 0.020 (0.051) min. 0.018 (0.45) 0.022 (0.55) 0.031 (0.80) 0.035 (0.90) 0.010 (0.25) 0.014 (0.35) 18_ typ. 0.110 (2.79) 0.150 (3.81) 0.300 (7.62) 0.347 (8.82) 0.100 (2.54) typ. Motorola reserves the right to make changes without further notice to any products herein. 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