Order this document by 4N29/D SEMICONDUCTOR TECHNICAL DATA GlobalOptoisolator [CTR = 100% Min] The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. [CTR = 50% Min] • Higher Sensitivity to Low Input Drive Current • Meets or Exceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix “V” must be included at end of part number. VDE 0884 is a test option. [CTR = 500% Min] *Motorola Preferred Devices Applications • Low Power Logic Circuits • Interfacing and coupling systems of different potentials and impedances • Telecommunications Equipment • Portable Electronics • Solid State Relays STYLE 1 PLASTIC 6 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit INPUT LED Reverse Voltage VR 3 Volts Forward Current — Continuous IF 60 mA LED Power Dissipation @ TA = 25°C Derate above 25°C PD 120 1.41 mW mW/°C 30 Volts OUTPUT DETECTOR Collector–Emitter Voltage VCEO Emitter–Collector Voltage VECO 5 Volts Collector–Base Voltage VCBO 30 Volts Collector Current — Continuous IC 150 mA Detector Power Dissipation @ TA = 25°C Derate above 25°C PD 150 1.76 mW mW/°C VISO 7500 Vac(pk) Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Ambient Operating Temperature Range(3) TA – 55 to +100 °C Tstg – 55 to +150 °C TL 260 °C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16″ from case) 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 1 6 2 5 3 4 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE 1. Difference in 4N32 and 4N33 is JEDEC Registration for VISO only. All Motorola 6–Pin devices exceed JEDEC specification and are 7500 Vac(pk). The same applies for 4N29 and 4N30. 2. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 4 Motorola Device Data Motorola, Inc.Optoelectronics 1995 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Symbol Min Typ(1) Max Unit *Reverse Leakage Current (VR = 3 V, RL = 1 M ohms) IR — 0.05 100 µA *Forward Voltage (IF = 10 mA) VF — 1.34 1.5 Volts Capacitance (VR = 0 V, f = 1 MHz) C — 1.8 — pF ICEO — — 100 nA *Collector–Base Breakdown Voltage (IC = 100 µA, IE = 0) V(BR)CBO 30 — — Volts *Collector–Emitter Breakdown Voltage (IC = 100 µA, IB = 0) V(BR)CEO 30 — — Volts *Emitter–Collector Breakdown Voltage (IE = 100 µA, IB = 0) V(BR)ECO 5 — — Volts hFE — 16K — — IC (CTR)(2) 50 (500) 10 (100) 5 (50) — — — — — — mA (%) VISO 7500 2500 1500 — — — — — — Vac(pk) RISO — 1011 — Ohms VCE(sat) — — — — 1.2 1 Volts CISO — 0.2 — pF Turn–On Time(6) (IC = 50 mA, IF = 200 mA, VCC = 10 V) ton — 0.6 5 µs Turn–Off Time(6) (IC = 50 mA, IF = 200 mA, VCC = 10 V) 4N29, 30, 31 4N32, 33 toff — — 17 45 40 100 Characteristic INPUT LED OUTPUT DETECTOR (TA = 25°C and IF = 0, unless otherwise noted) *Collector–Emitter Dark Current (VCE = 10 V, Base Open) DC Current Gain (VCE = 5 V, IC = 500 µA) COUPLED (TA = 25°C unless otherwise noted) *Collector Output Current (3) 4N32, 4N33 (VCE = 10 V, IF = 10 mA) 4N29, 4N30 4N31 Isolation Surge Voltage(4,5) (60 Hz ac Peak, 1 Second) 4N29/A, 4N30, 31, 32, 33 *4N29, 4N32 *4N30, 4N31, 4N33 Isolation Resistance(4) (V = 500 V) *Collector–Emitter Saturation Voltage(3) (IC = 2 mA, IF = 8 mA) Isolation Capacitance(4) (V = 0 V, f = 1 MHz) 4N31 4N29, 4N30, 4N32, 4N33 µs * Indicates JEDEC Registered Data. All Motorola 6–pin devices have VISO rating of 7500 Vac(pk). 1. Always design to the specified minimum/maximum electrical limits (where applicable). 2. Current Transfer Ratio (CTR) = IC/IF x 100%. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. 4. For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common. 5. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 6. For test circuit setup and waveforms, refer to Figure 11. p 2 Motorola Optoelectronics Device Data VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE OR DC 1.8 1.6 1.4 TA = –55°C 1.2 25°C 100°C 1 1 10 100 IF, LED FORWARD CURRENT (mA) 1000 I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS 2 10 NORMALIZED TO: IF = 10 mA TA = 25°C 1 TA = –55°C THRU +25°C 0.1 +70°C +100°C 0.01 0.5 IF = 10 mA 100 80 5 mA 60 40 2 mA 20 0 1 mA 0 1 2 3 4 5 6 7 8 9 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (NORMALIZED) Figure 3. Collector Current versus Collector–Emitter Voltage NORMALIZED TO TA = 25°C 1.1 1 0.9 0.8 0.7 –60 –40 –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 Figure 5. Collector–Emitter Voltage versus Ambient Temperature Motorola Optoelectronics Device Data 5 10 20 50 10 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5 0.2 0.1 –60 –40 –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 Figure 4. Output Current versus Ambient Temperature 1.3 1.2 10 ICEO, COLLECTOR–EMITTER DARK CURRENT (NORMALIZED) IC , COLLECTOR CURRENT (mA) 120 2 Figure 2. Output Current versus Input Current IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) Figure 1. LED Forward Voltage versus Forward Current 140 1 IF, LED INPUT CURRENT (mA) 105 104 NORMALIZED TO: VCE = 10 V NORMALIZED TO: TA = 25°C 103 102 30 V 10 10 V 1 0 20 40 60 TA, AMBIENT TEMPERATURE (°C) 80 100 Figure 6. Collector–Emitter Dark Current versus Ambient Temperature 3 1000 1000 VCC = 10 V RL = 1000 RL = 1000 t, TIME (µs) t, TIME (µs) 100 100 10 100 100 10 10 10 1 0.1 0.2 0.5 VCC = 10 V 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 1 0.1 100 0.2 Figure 7. Turn–On Switching Times 12 0.6 µA 10 0.5 µA 8 0.4 µA 6 0.3 µA 4 0.2 µA 2 0.1 µA 0 0 2 6 8 10 12 14 16 18 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 4 Figure 9. DC Current Gain (Detector Only) f = 1 MHz CCB 10 CEB 20 1 0.01 0.1 CCE 1 V, VOLTAGE (VOLTS) 10 100 Figure 10. Capacitances versus Voltage WAVEFORMS INPUT PULSE VCC = 10 V IC = 50 mA RL IF = 200 mA PULSE WIDTH < 1 ms 100 CLED TEST CIRCUIT INPUT 50 100 IB = 0.7 µA IF = 0 1 2 5 10 20 IF, LED INPUT CURRENT (mA) Figure 8. Turn–Off Switching Times C, CAPACITANCE (pF) IC, TYPICAL COLLECTOR CURRENT (mA) 14 0.5 10% OUTPUT OUTPUT PULSE 90% tr tf toff ton Figure 11. Switching Time Test Circuit and Waveforms 4 Motorola Optoelectronics Device Data PACKAGE DIMENSIONS –A– 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4 –B– 1 3 F 4 PL C N –T– L K SEATING PLANE J 6 PL 0.13 (0.005) G M E 6 PL D 6 PL 0.13 (0.005) M T A B M M T B M M A M DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 STYLE 1: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 ANODE CATHODE NC EMITTER COLLECTOR BASE CASE 730A–04 ISSUE G –A– 6 4 –B– 1 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 F 4 PL L H C –T– G J K 6 PL E 6 PL 0.13 (0.005) D 6 PL 0.13 (0.005) M T A M B M SEATING PLANE T B M A M CASE 730C–04 ISSUE D Motorola Optoelectronics Device Data M DIM A B C D E F G H J K L S INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 *Consult factory for leadform option availability 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. –A– 6 4 –B– 1 3 L N F 4 PL C –T– SEATING PLANE G J K DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 D 6 PL E 6 PL 0.13 (0.005) M T A M B M *Consult factory for leadform option availability CASE 730D–05 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *4N29/D* Motorola Optoelectronics Device Data 4N29/D