BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN silicon power transistor, designed 175 MHz applications, especially suited for design of wide-band and semi-wide-band VHF amplifiers. PACKAGE STYLE .380 4L STUD .112x45° A • Common Emitter-Class-A, B or C • PG = 9 dB at 28 W/175 MHz • Omnigold™ Metalization System B C MAXIMUM RATINGS D FEATURES: E ØC B H I J 6.0 A IC E G #8-32 UNC-2A F VCESM 36 V VCEO 18 V E VEBO 4.0 V PDISS 96 W @ TMB = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 MAXIMUM .175 / 4.45 .750 / 19.05 J θJC 1.85 °C/W CHARACTERISTICS SYMBOL TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 18 V BVCES IC = 25 mA 36 V BVEBO IE = 10 mA 4.0 V ICES VCE = 18 V hFE VCE = 5.0 V IC = 3.5 A 10 VCB = 13.5 V 58 f = 1.0 MHz 80 --- pF 2 CCS PG ηC mA 92 CCC CRE 10 VCC = 13.5 V POUT = 28 W f = 175 MHz 9.0 60 9.5 70 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB % REV. B 1/1