Automotive Series EEPROMs 125℃ SPI BUS ICs BR35□□□□ Family No.10001EAT09 BD35H□□□-WC Series ●Description BR35H□□□-WC Series is a SPI BUS interface method serial EEPROM. ●Features 1） High speed clock operation up to 5MHz(Max.) 2） 2.5V to 5.5V single power source operation most suitable for battery use. 3） Page write mode useful for initial value at factory shipment. 4） Highly reliable connection by Au pad and Au wire. 5） For SPI bus interface(CPOL,CPHA)=(0,0),(1,1) 6） Auto erase and auto end function at data rewrite. 7） Low operating current At write operation(5V): 0.6mA(Typ.) At read operation(5V): 1.3mA(Typ.) At standby operation(5V): 0.1μA(Typ.) 8） Address auto increment function at read operation. 9） Write mistake prevention function Write prohibition at power on. Write prohibition by command code(WRDI) Write mistake prevention function at low voltage. 10） MSOP8 / TSSOP-B8 / SOP8 / SOP-J8 Package. 11） Data at shipment Memory array:FFh. 12） Data Retention : 20 years(Ta≦125℃) 13） Endurance : 300,000 cycles(Ta≦125℃) ●Page Write Number of pages Product number 32Byte BR35H160-WC BR35H320-WC BR35H640-WC 64Byte BR35H128-WC ●BR35H Series Capacity Bit Format Product Name 16Kbit 32Kbit 64Kbit 128Kbit 2K×8 4K×8 8K×8 16Kx8 BR35H160-WC BR35H320-WC BR35H640-WC BR35H128-WC www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Supply Voltage 2.5～5.5V 2.5～5.5V 2.5～5.5V 2.5～5.5V 1/16 MSOP8 TSSOP-B8 SOP8 SOP-J8 ● ● - ● ● ● - ● ● ● ● ● ● ● ● 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ●Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Impressed Voltage Vcc -0.3 to +6.5 560(SOP8) Permissible 560(SOP-J8) Pd Dissipation 410(TSSOP-B8) 380(MSOP8) Storage Tstg -65 to +150 Temperature Range Operating Topr -40 to +125 Temperature Range Terminal Voltage -0.3 toVcc+0.3 ●Recommended Operating Conditions Symbol Limits Parameter Supply Voltage Vcc 2.5 to 5.5 Input Voltage Vin 0 to Vcc Unit V *1 *2 *3 *4 Unit V mw ℃ ℃ V ＊When using at Ta=25℃ or higher, 4.5mW (*1,*2), 3.3mW (*3) , 3.1 mW (*4)to be reduced per 1℃ ●Memory Cell Characteristics (Vcc=2.5V to 5.5V) Limits Parameter Unit Min. Typ. Max. Endurance *5 Data *5 Retention 1,000,000 500,000 300,000 40 25 - - 20 - - ●Input / Output Capacitance (Ta=25°C, frequency=5MHz) Parameter Condition Cycle Cycle Years Years Conditions Min. Max. CIN VIN=GND － 8 COUT VOUT=GND － 8 Input *6 Capacitance Output *6 Capacitance Ta≦85℃ Ta≦105℃ Ta≦125℃ Ta≦25℃ Ta≦105℃ Cycle Symbol Unit pF * 6:Not 100% TESTED Ta≦125℃ Years * 5:Not 100% TESTED ●Electrical Characteristics (Unless otherwise specified, Ta=-40 to +125°C, Vcc=2.5 to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. 0.7x Vcc － 2.5V≦Vcc≦5.5V VIH V “H” Input Voltage Vcc +0.3 0.3x － 2.5V≦Vcc≦5.5V VIL -0.3 V “L” Input Voltage Vcc － VOL 0 0.4 V IOL=2.1mA “L” Output Voltage Vcc － VOH Vcc V IOH=-0.4mA “H” Output Voltage -0.5 － ILI -10 10 μA VIN=0V to Vcc Input Leakage Current － ILO -10 10 μA VOUT=0V to Vc, CSB=Vcc Output Leakage Current － ICC1 － Operating Current (Write) － ICC2 － ICC3 － 2.0 *7 Vcc=2.5V,fSCK=5MHz, tE/W=5ms,VIH/VIL=0.9Vcc/0.1Vcc 2.5 *8 3.0 SO=OPEN Byte Wrte, Page Write *7 Vcc=5.5V,fSCK=5MHz, tE/W=5ms,VIH/VIL=0.9Vcc/0.1Vcc 5.5 *8 － mA 1.5 mA SO=OPEN Byte Wirte, Page Write Vcc=2.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc SO=OPEN mA Read, Read Status Register Operating Current (Read) － ICC4 － 2.0 Vcc=5.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc SO=OPEN mA Read, Read Status Register － ISB Standby Current － Vcc=5.5V CSB=Vcc, SCK=SI=Vcc or GND, SO=OPEN μA 10 * This product is not designed for protection against radioactive rays. *7 BR35H160/320-WC *8 BR35H640/128-WC ●Block Diagram CSB VOLTAGE INSTRUCTION DECODE DETECTION CONTROL CLOCK SCK GENERATION SI WRITE HIGH VOLTAGE INHIBITION GENERATOR INSTRUCTION REGISTER STATUS REGISTER ADDRESS 11～14bit *9 REGISTER ADDRESS 11～14bit *9 DECODER *9 11bit: BR35H160-WC 12bit: BR35H320-WC 13bit: BR35H640-WC 14bit: BR35H128-WC 16K～128K EEPROM READ/WRITE DATA SO REGISTER 8bit AMP 8bit Fig.1 Block Diagram www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 2/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ●Pin Assignment and Description Vcc NC SCK SI BR35H160-WC BR35H320-WC BR35H640-WC BR35H128-WC CSB SO NC GND Fig.2 Pin Assignment Diagram Terminal Name Vcc GND CSB SCK SI SO NC Input/Output – – Input Input Input Output – Function Power Supply to be connected All input / output reference voltage, 0V Chip select input Serial clock input Start bit, ope code, address, and serial data input Serial data output Non connection ●Operating Timing Characteristics ●Sync data input / output timing (Ta=-40°C to +125°C, unless otherwise specified, load capacitance CL1=100pF) tCSS tCS 2.5≦Vcc≦5.5V CSB Parameter Symbol Unit tSCKS tSCKWL tSCKWH Min. Typ. Max. SCK SCK frequency fSCK 5 MHz tDIS tDIH SCK high time 85 ns tSCKWH SI SCK low time 85 ns tSCKWL High-Z SO CSB high time tCS 85 ns Fig.3 Input timing CSB setup time tCSS 90 ns CSB hold time SCK setup time SCK hold time SI setup time SI hold time tCSH tDIS tDIH tPD1 85 90 90 20 30 - - 70 ns ns ns ns ns ns tPD2 - - 55 ns tOH tOZ tRC tFC 0 - - 100 1 1 ns ns μs μs tRO - - 50 ns tFO - - 50 ns tE/W - - 5 ms tSCKS tSCKH Data output delay time1 Data output delay time2 (CL2=30pF) Output hold time Output disable time SCK rise time SCK fall time OUTPUT rise time OUTPUT fall time Write time *1 ＊ tRC tFC Data through SI enters the IC in sync with the data rise edge of SCK. Please input address and data starting from the most significant bit MSB. tCS tCSH tSCKH CSB SCK SI tPD tRO,tFO tOH tOZ High-Z SO Fig.4 Input / Output timing Data through SO is output in sync with the data fall edge of SCK. Data is output starting from the most significant bit MSB. 1 NOT 100% TESTED ●AC measurement conditions Parameter Symbol CL1 CL2 - Load capacitance 1 Load capacitance 2 Input rise time Input fall time Input voltage Input / Output judgment voltage - Min. - Limits Typ. Max. 100 30 50 50 0.2Vcc / 0.8Vcc 0.3Vcc / 0.7Vcc Unit pF pF ns ns V V ●tOZ measurement condition IL is the load current that changes the SO voltage to 0.5×Vcc. IL = ±1mA. After CSB starts to rise, the time needed for SO to change to High-Z is defined with 10% changing point from SO=High or SO=Low. 0.8Vcc Signal Input CSB Vcc SO NC NC SCK 0.7Vcc CSB 0.2Vcc Signal Input IL=±1mA CL1=100pF GND SI High Signal Input 0.9Vcc SO Fig.5 tOZ measurement circuit www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Fig.6 3/16 0.5Vcc 0.1Vcc Low tOZ measurement timing 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ● Characteristic Data (The following characteristic data are Typ. value.) 6 5 Ta=-40℃ Ta=25℃ Ta=125℃ 5 4 VOL1[V] SPEC 3 Ta=-40℃ Ta=25℃ Ta=125℃ 0.8 4 VIL[V] VIH[V] 1 6 Ta=-40℃ Ta=25℃ Ta=125℃ 3 0.6 SPEC 0.4 2 2 1 1 0.2 SPEC 0 0 0 1 2 3 Vcc[V] 4 5 0 0 6 Fig.7 "H" input voltage VIH(CSB,SCK,SI) 3 Vcc[V] 4 5 0 6 8 1.5 1.0 Ta=-40℃ Ta=25℃ Ta=125℃ 0.5 0.0 -1 -0.8 -0.6 -0.4 IOH[mA] -0.2 6 4 2 2 Fig.10 "H" output voltage VOH1 (Vcc=2.5V) 1 2 3 Vcc[V] 4 5 6 0 2.0 SPEC 1.0 3 VOUT[V] 4 5 6 Fig.12 Output leak current ILO(SO) 6.0 Ta=-40℃ Ta=25℃ Ta=125℃ DATA=00h SPEC 2.0 ICC READ [mA] SPEC 2 2.5 Ta=-40℃ Ta=25℃ Ta=125℃ DATA=00h ICC WRITE [mA] 3.0 Ta=-40℃ Ta=25℃ Ta=125℃ 1 Fig.11 Input leak current ILI(CSB,SCK,SI) 8.0 DATA=00h 6 0 0 4.0 5 Ta=-40℃ Ta=25℃ Ta=125℃ 6 4 0 4 SPEC 8 Ta=-40℃ Ta=25℃ Ta=125℃ 0 -1.2 3 IOL[mA] 10 ILO[μA] ILI[μA] SPEC 2 12 SPEC 10 2.0 1 Fig.9 "L" output voltage VOL1 (Vcc=2.5V) 12 2.5 VOH1[V] 2 Fig.8 "L" input voltage VIL(CSB,SCK,SI) 3.0 ICC WRITE [mA] 1 4.0 SPEC 2.0 SPEC 1.5 SPEC 1.0 0.5 0.0 0.0 0 1 2 3 4 5 6 0.0 0 Vcc[V] Fig.13 Operating Current (WRITE) ICC1,2 ( BR35H160/320-WC ) 2 4 5 6 0 80 10 tSCKWH [ns] fSCK[MHz] 4 SPEC 1 Ta=-40℃ Ta=25℃ Ta=125℃ 2 2 3 Vcc[V] 4 5 6 1 2 3 Vcc[V] 4 5 0 1 2 40 5 6 Fig.19 SCK low time tSCKWL www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 6 SPEC Ta=-40℃ Ta=25℃ Ta=125℃ 60 40 Ta=-40℃ Ta=25℃ Ta=125℃ 60 40 20 0 0 5 80 20 20 4 100 tCSS[ns] tCS[ns] Ta=-40℃ Ta=25℃ Ta=125℃ 3 Vcc[V] Fig.18 SCK high time tSCKWH 80 4 40 SPEC 80 3 Vcc[V] 60 6 100 SPEC 2 Ta=-40℃ Ta=25℃ Ta=125℃ Fig.17 SCK frequency fSCK 100 1 5 0 0 6 Fig.16 Standby Current ISB 0 4 20 0 0 60 3 Vcc[V] 100 SPEC 6 1 2 SPEC 8 0 1 Fig.15 Operating Current (READ) ICC3,4 Fig.14 Operating Current (WRITE) ICC1,2 ( BR35H640/128-WC ) 100 Ta=-40℃ Ta=25℃ Ta=125℃ 10 tSCKWL [ns] 3 Vcc[V] 12 ISB[μA] 1 0 0 1 2 3 Vcc[V] 4 5 Fig.20 CSB high time tCS 4/16 6 0 1 2 3 Vcc[V] 4 5 6 Fig.21 CSB setup time tCSS 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ● Characteristic Data (The following characteristic data are Typ. value.) 50 50 SPEC 40 80 tDIS[ns] Ta=-40℃ Ta=25℃ Ta=125℃ 60 40 30 SPEC 20 0 1 2 3 Vcc[V] 4 5 0 6 100 3 Vcc[V] 4 5 0 6 60 1 40 3 Vcc[V] 4 5 6 120 Ta=-40℃ Ta=25℃ Ta=125℃ 80 SPEC 2 Fig.24 SI hold time tDIH SPEC 100 Ta=-40℃ Ta=25℃ Ta=125℃ 80 SPEC 60 tHFH [ns] Ta=-40℃ Ta=25℃ Ta=125℃ tOZ [ns] tPD [ns] 2 100 40 60 40 20 20 20 0 0 0 0 1 2 3 Vcc[V] 4 5 0 6 Fig.25 Data output delay time ｔPD1 (CL=100pF) 100 1 2 3 Vcc[V] 4 5 0 6 Fig.26 Data utput delay time tPD2 tFO [ns] SPEC 40 20 1 2 3 Vcc[V] 4 5 6 Fig.28 Output rise time tRO www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 4 5 6 SPEC SPEC 40 4 2 0 0 3 Vcc[V] Ta=-40℃ Ta=25℃ Ta=125℃ 6 60 20 0 2 8 Ta=-40℃ Ta=25℃ Ta=125℃ 80 60 1 Fig.27 Output disable time tOZ 100 Ta=-40℃ Ta=25℃ Ta=125℃ 80 tRO [ns] 1 Fig.23 SI setup time tDIS Fig.22 CSB hold time tCSH 80 20 0 0 0 SPEC 30 10 10 20 Ta=-40℃ Ta=25℃ Ta=125℃ 40 tE/W[ms] tCSH[ns] Ta=-40℃ Ta=25℃ Ta=125℃ tDIH[ns] 100 0 0 1 2 3 Vcc[V] 4 5 Fig.29 Output fall time tFO 5/16 6 0 1 2 3 Vcc[V] 4 5 6 Fig.30 Write cycle time tE/W 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ●Features ○Status registers This IC has status registers. The status register has 8 bits and expresses the following parameters. WEN is set by the write enable command and write disable command. WEN goes into the write disable status when the power source is turned off. The R/B bit is for write confirmation and therefore cannot be set externally. The status register value can be read by use of the read status command. ●Status registers Product Number BR35H160-WC BR35H320-WC BR35H640-WC BR35H128-WC bit Memory location WEN Register R/B Register bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 0 0 0 0 0 0 WEN R/B Function Write and write status register write enable / disable status confirmation bit WEN=0=prohibited WEN=1=permitted Write cycle status (READY / BUSY) status confirmation bit R/B=0=READY R/B=1=BUSY ●Command mode Command Ope code BR35H160-WC BR35H320-WC BR35H640-WC BR35H128-WC 0000 0110 0000 0100 0000 0011 0000 0010 0000 0101 Contents Write enable command WREN Write enable Write disable command WRDI Write disable Read command READ Read Write command WRITE Write RDSR Read status register Status register read command ●Timing chart 1. Write enable (WREN) / disable (WRDI) cycle WREN (WRITE ENABLE): Write enable CSB SCK 0 SI SO 1 0 0 2 0 3 0 4 0 5 6 1 1 7 0 High-Z Fig.31 Write enable command WRDI (WRITE DISABLE): Write disable CSB SCK SI SO 0 0 1 0 2 0 3 0 5 4 0 1 6 0 7 0 High-Z Fig.32 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Write disable 6/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ○This IC has a write enable status and a write disable status. Write enable status is achieved by the write enable command and write disable status is achieved by the write disable command. As for these commands, set CSB to LOW and then input the respective ope codes. The respective commands are accepted at the 7-th clock rise. The command is also valid with Inputs over 7 clocks. In order to perform a write command it is necessary to use the write enable command to set the IC to the write enable status. If a write command is input during write disable status the command will be cancelled. After a write command is input during write enable status the IC will return to the write disable status. When turning on the power the IC will be in write disable status. 2. Read command (READ) ～ ～ ～ ～ CSB ～ ～ 0 1 2 3 4 5 6 7 8 9 10 11 23 ～ ～ SCK 24 30 ～ ～ 0 0 0 0 0 1 * 1 * A13 A12 A1 ～ ～ 0 ～ ～ SI A0 ～ ～ ～ ～ ～ ～ High-Z SO D6 D7 D2 D1 D0 Product number BR35H160-WC BR35H320-WC Address Length A10-A0 A11-A0 BR35H640-WC BR35H128-WC A12-A0 A13-A0 ＊=Don't Care Fig.33 Read command (BR35H160/320/640/128-WC) By use of the read command, the data of the EEPROM can be read. As for this command, set CSB to LOW, then input the address after the read ope code. EEPROM starts data output of the designated address. Data output is started from the SCK fall of 23 clock and from D7 to D0 sequentially. The IC features an increment read function. After the output of 1 byte (8bits) of data, by continuing input of SCK the next data addresses can be read. Increment read can read all addresses of the EEPROM. After reading the data of the most the significant address, by continuing with the increment read the data of the most insignificant address is read. 3. Write command (WRITE) 1 0 2 3 4 5 6 7 9 8 10 11 ～ ～ SCK ～ ～ ～ ～ ～ ～ CSB 23 24 ～ ～ ～ ～ 0 0 0 0 1 0 A13 * * A12 A1 A0 D7 ～ ～ 0 D6 High-Z D2 D0 D1 ～ ～ ～ ～ SO 0 ～～ ～～ SI 31 30 Product number BR35H160-WC BR35H320-WC Address Length A10-A0 A11-A0 BR35H640-WC BR35H128-WC A12-A0 A13-A0 ＊=Don't Care Fig.34 Write command (BR35H160/320/640/128-WC) 12 * 23 A1 A0 25 24 D7 D6 31 32 32n-7 33 32n-2 32n-1 32n D1 D0 D7 D7 D6 D6 D0 ～ ～ High-Z 30 ～ ～ 0 8 32n-8 ～ ～ 1 7 CSB valid timing ～ ～ 0 6 ～ ～ ～ ～ 0 5 ～ ～ ～ ～ 0 4 ～ ～ ～ ～ 0 3 ～ ～ 0 2 ～ ～ SO 0 1 ～ ～ SI 0 ～ ～ SCK ～ ～ ～ ～ CSB Fig.35 N Byte page write command (BR35H160/320/640-WC) * 23 A1 A0 24 D7 25 D6 30 31 32 64n-7 33 64n-2 64n-1 64n D1 D0 D7 D6 D7 D6 D0 ～ ～ High-Z 12 ～ ～ 0 8 64n-8 ～ ～ 1 7 ～ ～ 0 6 ～ ～ ～ ～ 0 5 CSB valid timing ～ ～ ～ ～ 0 4 ～ ～ ～ ～ 0 3 ～ ～ 0 2 ～ ～ SO 0 1 ～ ～ SI 0 ～ ～ SCK ～ ～ ～ ～ CSB Fig.36 N Byte page write command (BR35H128-WC) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 7/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series With the write command data can be written to the EEPROM. As for this command, set CSB to LOW, then input address and data after inputting the write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time of tE/W (Max 5ms). During tE/W, commands other than the status read command are not accepted. Start CSB after taking the last data (D0) and before the next SCK clock starts. At other timings the write command will not be executed and will be cancelled. The IC has page write functionality. After input 1 byte (8bits) of data, by continuing data *1 *2 input without starting CSB, data up to 32/64 bytes can be written in one tE/W. In page write, the insignificant 5/6 bit of the designated address is incremented internally every time 1 byte of data is input, and data is written to the respective addresses. When data larger then the maximum bytes is input the address rolls over and previously input data is overwritten. Write command is executed when CSB rises between the SCK clock rising edge to recognize the 8th bit’s of data input and the next SCK rising edge. At other timings the write command is not executed and cancelled (Fig.18 valid timing c). In page write, the CSB valid timing is every 8 bits. If CSB rises at other timings page write is cancelled together with the write command and the input data is reset. This column addresses are Top address of this page This column addresses are *1 BR35H160/320/640-WC = Max 32 Bytes BR35H128-WC = Max 64 Bytes *2 BR35H160/320/640-WC = Lower 5 bits BR35H128-WC = Lower 6 bits Top address of this page 32byte 64byte page0 000h 001h 002h ･･･ 01Eh 01Fh page 0 0000h 0001h 0002h ･･･ 003Eh page 1 020h 021h 022h ･･･ 03Eh 03Fh page 1 0040h 0041h 0042h ･･･ 007Eh 007Fh page 2 ・ ・ ・ 040h ・ ・ ・ 041h ・ ・ ・ 042h ・ ・ ・ ･･･ ・ ・ ・ 05Eh ・ ・ ・ 05Fh ・ ・ ・ page 2 ・ ・ ・ 0080h ・ ・ ・ 0081h ・ ・ ・ 0082h ・ ・ ・ ･･･ ・ ・ ・ 00BEh ・ ・ ・ 00BFh ・ ・ ・ page m-1 n-63 n-62 n-61 ･･･ n-33 page m-1 n-127 n-126 n-125 ･･･ n-65 n-64 n-31 n-30 n-29 ･･･ n-1 n-63 n-62 n-61 ･･･ n-1 page *4 m *3 n=8191d=1FFFh: BR35H640-WC n=4095d=FFFh：BR35H320-WC n=2047d=7FFh：BR35H160-WC *4 m=256 : BR35H640-WC m=127：BR35H320-WC m=63：BR35H160-WC n-32 *3 *6 n page m 003Fh *5 n *5 n=16383d=3FFFh：BR35H128-WC This column addresses are the last address of this page This column addresses are the *6 m=255：BR35H128-WC last address of this page Fig.37 EEPROM physical address for Page write command (32/64Byte) ●Example of Page write command No. Addresses of Page0 ① Previous data ② 2 bytes input data ③ After No.② ④ 34 byte input data ⑤ After No.④ 000h 00h AAh AAh AAh 001h 01h 55h 55h 55h 002h 02h 02h AAh ････ ････ ････ ････ ････ 01Eh 1Eh 1Eh AAh 01Fh 1Fh 1Fh 55h FFh 00h - ････ - - FFh 00h AAh ････ AAh 55h a：In case of input the data of No.② which is 2 bytes page write command for the data of No.①, EEPROM data changes like No.③. b：In case of input the data of No.④ which is 34 bytes page write command for the data of No.①, EEPROM data changes like No.⑤. c：In case of a or b, when write command is cancelled, EEPROM data keep No.①. In page write command, when data is set to the last address of a page (e.g. address “03Fh” of page 1), the next data will be set to the top address of the same page (e.g. address “020h” of page 1). This is why page write address increment is available in the same page. As a reference, if of 32 bytes, page write command is executed for 2 bytes the data of the other 30 bytes without addresses will not be changed. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 8/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series 4.Status register read command CSB SCK SI SO 1 0 0 0 2 0 3 0 4 5 0 7 6 0 1 9 10 11 12 13 14 15 1 High-Z Fig.38 8 bit7 bit6 bit5 bit4 bit3 0 0 0 0 0 bit2 bit1 0 WEN R/B bit0 Status register read command (BR35H160/320/640/128-WC) The EEPROM status can be read by use of the status register read command. For this command set CSB to Low then input the ope code of the status register read command followed by the clock input as shown above. The data of status register will then be read out. This command features increment functionality. When clock input is continued during CSB=Low, 8 bytes of status register data will be continuously read out. When this command is executed from the start of write programming to the end of write programming, the end of write programming can be confirmed by checking the following changes: WEN=Low followed by R/B=Low. After confirming the end of write programming, before inputting the next command CSB first needs to be High and then put back to Low. ●At standby ○Current at standby Set CSB “H”, and be sure to set SCK, SI input “L” or “H”. Do not input intermediate electric potantial. ○Timing As shown in Fig.15, at standby, when SCK is “H”, even if CSB falls, SI status is not read at fall edge. SI status is read at SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status Even if CSB is fallen at SCK=SI=”H”, SI status is not read at that edge. CSB Command start here. SI is read. SCK 0 1 2 SI Fig.39 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Operating timing 9/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ●Method to cancel each command ○READ ・Cancellation method: cancel by CSB = “H” Ope code 8 bits Address Data 8 bits/16bits 8 bits Cancel available in all areas of read mode Fig.40 READ cancel valid timing ○RDSR ・Cancellation method: cancel by CSB = “H” Data Ope code 8 bits 8 bits Cancel available in all areas of rdsr mode Fig.41 RDSR cancel valid timing ○WRITE, PAGE WRITE a：Ope code, address input area. Cancellation possible by CSB=”H” b：Data input area (D7~D1 input area) Cancellation possible by CSB=”H” c：Data input area (D0 area) Write starts after CSB rise. After CSB rise, cancellation is no longer possible. d：tE/W area. Cancellation is possible by CSB = “H”. However, when write starts (CSB rise) in area c, cancellation is no longer possible. Also, cancellation is not possible by continues inputting of SCK clock. In page write mode, there is a write enable area at every 8 clocks. Ope code 8bits Address Data 16bits 8bits a tE/W b d c SCK SI D7 D6 D5 D4 D3 D2 D1 D0 c b Fig.42 WRITE cancel valid timing Note 1) If Vcc is set to OFF during execution of write the data of the designated address is not guaranteed. Please execute write again. Note 2) If CSB rises at the same timing as that the SCK rises, write execution / cancel will become unstable. Therefore, it is recommended to let CSB rise in the SCK = “L” area. As for SCK rise, ensure a timing of tCSS / tCSH or higher. ○WREN/WRDI a：From ope code to 7-th clock rise, cancel by CSB = “H”. b：Cancellation is not possible when CSB rises after the 7-th clock. 6 SCK 7 8 8 bits a b Fig.43 WREN/WRDI cancel valid timing www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 10/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ●High speed operations In order to realize stable high speed operations, pay attention to the following input / output pin conditions. ○Input pin pull up, pull down resistance When attaching pull up, pull down resistance to the EEPROM input pin, select an appropriate value for the microcontroller VOL, IOL from the VIL characteristics of this IC. ○Pull up resistance VCC-VOLM RPU≥ Microcontroll IOLM EEPROM RPU VOLM VOLM≤ VILE “L” output ･･･① IOLM ･･･② VILE “L” input Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V, IOLM=2mA, from the equation ①, Fig.44 Pull up resistance 5－0.4 RPU≧ -3 2×10 ∴RPU≧ 2.3[kΩ] With the value of Rpu to satisfy the above equation, VOLM becomes 0.4V or lower, and with VILE (=1.5V), the equation ② is also satisfied. ・VILE :EEPROM VIL specifications ・VOLM :Microcontroller VOL specifications ・IOLM :Microcontroller IOL specifications Also, in order to prevent malfunction or erroneous write at power ON/OFF, be sure to make CSB pull up. ○Pull down resistance RPD≧ Microcontroll EEPROM VOHM VIHE “H” output IOHM RPD VOHM≧ VOHM ･･･③ IOHM VIHE ･･･④ Example) When VCC=5V, VOHM=VCC-0.5V, IOHM＝0.4mA, VIHE=VCC×0.7V, from the equation③, “H” input Fig.45 Pull down resistance RPD≧ 5－0.5 0.4×10-3 ∴RPU≧ 11.3[kΩ] The operations speed changes according to the amplitude VIHE, VILE of the signals input to the EEPROM. More stable high speed operations can be realized by inputting signals with Vcc / GND levels of amplitude. On the contrary, when *1 signals with an amplitude of 0.8Vcc / 0.2Vcc are input, operation speed slows down. In order to realize more stable high speed operation, it is recommended to set the values of RPU, RPD as large as possible, and to have the amplitude of the signals input to the EEPROM close to the Vcc / GND amplitude level. * ( 1 In this case, the guaranteed value of operating timing is guaranteed.) ○SO load capacitance condition The load capacitance of the SO output pin affects the SO output delay characteristic. (Data output delay time, time from HOLDB to High-Z, output rise time, output fall time.). Make the SO load capacitance small to improve the output delay characteristic. EEPROM SO CL Fig.46 SO load dependency of data output delay time tPD www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 11/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ○Other cautions Make all wires from the microcontroller to EEPROM input pin the same length. This in order to prevent setup / hold violation to the EEPROM. ●Equivalent circuit ○Output circuit SO OEint. Fig.47 SO output equivalent circuit ○Input circuit RESETint. CSB Fig.48 CSB input equivalent circuit SCK SI Fig.49 SCK input equivalent circuit www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Fig.50 SI input equivalent circuit 12/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ●Notes on power ON/OFF ○At power ON/OFF set CSB=”H” (=Vcc). When CSB is “L”, the IC goes into input accept status (active). If power is turned on in this status noises, etc. may cause malfunction or erroneous write. To prevent this, set CSB to “H” at power ON. (When CSB is in “H” status, all inputs are canceled.) Vcc Vcc CSB GND Good example Fig.51 Bad example CSB timing at power ON/OFF (Good example) CSB terminal is pulled up to Vcc. After turning power off allow for 10ms or more before turning power on again. If power is turned on without observing this condition, the IC internal circuit may not be reset. (Bad example) CSB terminal is “L” at power ON/OFF. In this case, CSB always becomes “L” (active status), and the EEPROM may malfunction or perform an erroneous write due to noises, etc. This can even occur when CSB input is High-Z. ○LVCC circuit LVCC (Vcc-Lockout) circuit prevents data rewrite action at low power and prevents erroneous write. At LVCC voltage (Typ. =1.9V) or below, it prevents data rewrite. ○P.O.R. circuit This IC has a POR (Power On Reset) circuit as countermeasure against erroneous write. After the POR operation is performed, write disable status is entered. The POR circuit is only valid when power is ON and does not work when power is OFF. When power is ON and the following recommended tR, tOFF, Vbot conditions are not satisfied, write enable status might be entered due to noise etc. tR Recommended conditions for tR, tOFF, Vbot Vcc tOFF Vbot 0 Fig.52 tR tOFF Vbot 10ms or below 10ms or higher 0.3V or below 10ms or below 10ms or higher 0.2V or below Rise waveform ●Noise countermeasures ○Vcc noise (bypass capacitor) When noise or surge gets in the power source line, malfunction may occur. To prevent this, it is recommended to attach a bypass capacitor (0.1μF) between IC Vcc and GND, as close to IC as possible. It is also recommended to attach a bypass capacitor between the board Vcc and GND. ○SCK noise When the rise time of SCK (tRC) is long and a there is a certain degree of noise, malfunction may occur due to clock bit displacement. To avoid this, a Schmitt trigger circuit is built in the SCK input. The hysteresis width of this circuit is set to about 0.2V. If noises exist at the SCK input set the noise amplitude to 0.2Vp-p or below. Also, it is recommended to set the rise time of SCK (tRC) to 100ns or below. In case the rise time is 100ns or higher, sufficient noise countermeasures are needed. Clock rise, fall time should be as small as possible. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 13/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ●Notes for use (1) Described numeric values and data are design representative values and not guaranteed. (2) We believe that the application circuit examples are recommendable. However, in actual use, please sufficiently further characteristics. When changing the fixed number of external parts, make your decision with sufficient margin, in consideration of static characteristics, transition characteristics and fluctuations of external parts and our LSI. (3) Absolute maximum ratings If the absolute maximum ratings such as impressed voltage, operating temperature range, etc. are exceeded, the LSI might be damaged. Please do not impress voltage or temperature exceeding the absolute maximum ratings. In case of fear of exceeding the absolute maximum ratings please take physical safety countermeasures such as fuses and see to it that conditions exceeding the absolute maximum ratings are impressed to LSI. (4) GND electric potential Set the voltage of the GND terminal as low as possible with all action conditions. Ensure that that all terminal voltages are higher than that of the GND terminal. (5) Heat design In consideration of permissible dissipation in actual use condition, please carry out the heat design with sufficient margin. (6) Inter-terminal short circuit and wrong packaging When packaging the LSI onto a board, pay sufficient attention to the LSI direction and displacement. Wrong packaging may damage LSI. Short circuit between LSI terminals, terminals and power source, terminal and GND due to foreign matters may also result in LSI damage. (7) Use in strong electromagnetic fields may cause malfunction. Therefore, please evaluate the design sufficiently. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 14/16 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ●Ordering part number B 3 R Rohm type 5 H 1 6 0 Capacity Operating 160=16K temperature H:-40℃ to +125℃ 320=32K 640=64K 128=128K BUS type 35：SPI W F Double cell Package FVM : MSOP8 FVT : TSSOP-B8 F : SOP8 FJ : SOP-J8 C E 2 Packaging and forming specification E2：Embossed tape and reel TR：Embossed tape and reel (MSOP8 package only) ●Package specifications SOP8 <Tape and Reel information> 5.0±0.2 (MAX 5.35 include BURR) 6 +6° 4° −4° 5 4.4±0.2 6.2±0.3 1 2 3 0.9±0.15 7 0.3MIN 8 Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 4 0.595 1.5±0.1 +0.1 0.17 -0.05 S S 0.11 0.1 1.27 1pin 0.42±0.1 Reel (Unit : mm) Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. SOP-J8 <Tape and Reel information> 4.9±0.2 (MAX 5.25 include BURR) +6° 4° −4° 6 5 0.45MIN 7 3.9±0.2 6.0±0.3 8 1 2 3 Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 4 0.545 0.2±0.1 1.375±0.1 S 0.175 1.27 0.42±0.1 0.1 S 1pin Reel (Unit : mm) Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. TSSOP-B8 <Tape and Reel information> 3.0 ± 0.1 (MAX 3.35 include BURR) 8 7 6 4±4 3000pcs 2 0.525 3 4 1PIN MARK E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1.0±0.2 0.5±0.15 6.4±0.2 4.4±0.1 +0.05 0.145 −0.03 S 0.1±0.05 1.2MAX Embossed carrier tape Quantity Direction of feed 1 1.0±0.05 Tape 5 0.08 S +0.05 0.245 −0.04 0.08 M 1pin 0.65 Reel (Unit : mm) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 15/16 Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. 2010.05 - Rev.A Technical Note BD35H□□□-WC Series ●Package specifications (Continue) MSOP8 <Tape and Reel information> 2.8±0.1 4.0±0.2 8 7 6 5 0.6±0.2 +6° 4° −4° 0.29±0.15 2.9±0.1 (MAX 3.25 include BURR) Tape Embossed carrier tape Quantity 3000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1 2 3 4 1PIN MARK 1pin +0.05 0.145 −0.03 0.475 0.08±0.05 0.75±0.05 0.9MAX S +0.05 0.22 −0.04 0.08 S Direction of feed 0.65 Reel (Unit : mm) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 16/16 ∗ Order quantity needs to be multiple of the minimum quantity. 2010.05 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. 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Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. R1010A