INFINEON BSM100GD120DN2

SIGC156T120R2C
IGBT Chip in NPT-technology
FEATURES:
• 1200V NPT technology 200µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
• integrated gate resistor
Chip Type
VCE
ICn
SIGC156T120R2C 1200V 100A
This chip is used for:
• power module
BSM100GD120DN2
C
Applications:
• drives
G
Die Size
Package
12.59 X 12.59 mm2
sawn on foil
E
Ordering Code
Q67041A4661-A003
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
12.59 X 12.59
mm
2
8 x ( 3.98 x 2.38 )
1.46 x 0.8
158.5 / 132.6
Thickness
200
µm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
82 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
SIGC156T120R2C
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
1200
V
1)
A
Collector-emitter voltage, Tj=25 °C
V CE
DC collector current, limited by Tjmax
IC
Pulsed collector current, tp limited by Tjmax
Icpuls
300
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Ts t g
-55 ... +150
°C
1)
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Value
Conditions
min.
Unit
typ.
max.
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V , IC=5mA
1200
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC =100A
2.0
2.5
3.0
Gate-emitter threshold voltage
VGE(th)
IC =4mA , VGE=VCE
4.5
5.5
6.5
Zero gate voltage collector current
ICES
VCE=1200V , VGE=0V
600
µA
Gate-emitter leakage current
IGES
VCE=0V , VGE=20V
600
nA
Integrated gate resistor
RGint
V
Ω
5
ELECTRICAL CHARACTERISTICS (tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
Conditions
Value
min.
typ.
max.
Ci s s
V C E= 2 5 V ,
-
6.5
-
Co s s
V GE= 0 V ,
-
1
-
Cr s s
f =1MHz
-
0.5
-
Unit
nF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Parameter
Symbol
Conditions 1)
Value
min.
typ.
max.
Turn-on delay time
t d(on)
Tj= 1 2 5 ° C
-
160
320
Rise time
tr
V C C =600V,
-
80
160
I C =100A,
Turn-off delay time
td(off)
V G E =+15/ - 1 5 V ,
-
400
520
Fall time
tf
RG = 6 . 8 Ω
-
70
100
1)
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
Unit
ns
SIGC156T120R2C
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
SIGC156T120R2C
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
BSM100GD120DN2
ECONOPACK3
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003