ONSEMI BZX84C2V4LT1

BZX84B4V7LT1,
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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3
Cathode
1
Anode
Features
•
•
•
•
•
•
•
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
Pb−Free Packages are Available
MARKING
DIAGRAM
3
1
2
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
SOT−23
CASE 318
STYLE 8
xxx M G
G
1
xxx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
* Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
MAXIMUM RATINGS
Rating
Symbol
Total Power Dissipation on FR−5 Board,
(Note 1) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
Junction and Storage Temperature Range
TJ, Tstg
Package
Shipping†
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10,000/Tape & Reel
SOT−23
(Pb−Free)
10,000/Tape & Reel
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
BZX84BxxxLT3
SOT−23
10,000/Tape & Reel
BZX84BxxxLT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
Device
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
300
2.4
417
mW
mW/°C
°C/W
BZX84CxxxLT3G
−65 to
+150
°C
BZX84BxxxLT1G
BZX84CxxxLT1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
BZX84CxxxLT1G
BZX84CxxxLT3
BZX84BxxxLT1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
July, 2009 − Rev. 13
1
Publication Order Number:
BZX84C2V4LT1/D
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
I
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Parameter
Symbol
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
QVZ
C
IF
VZ VR
Maximum Temperature Coefficient of VZ
IR VF
IZT
Zener Voltage Regulator
Max. Capacitance @ VR = 0 and f = 1 MHz
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2
V
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Device
Marking
Min
Nom
Max
ZZT1
(W)
@ IZT1 =
5 mA
BZX84C2V4LT1, G
Z11
2.2
2.4
2.6
BZX84C2V7LT1, G
Z12
2.5
2.7
2.9
BZX84C3V0LT1, G
Z13
2.8
3
BZX84C3V3LT1, G
Z14
3.1
BZX84C3V6LT1, G
Z15
3.4
BZX84C3V9LT1, G
Z16
BZX84C4V3LT1, G
BZX84C4V7LT1, G
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min
Max
ZZT2
(W)
@ IZT2 =
1 mA
100
1.7
2.1
100
1.9
2.4
3.2
95
2.1
3.3
3.5
95
3.6
3.8
90
3.7
3.9
4.1
W9
4
4.3
Z1
4.4
4.7
BZX84C5V1LT1, G
Z2
4.8
BZX84C5V6LT1, G
Z3
5.2
BZX84C6V2LT1, G
Z4
BZX84C6V8LT1, G
BZX84C7V5LT1, G
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Min
Max
ZZT3
(W)
@ IZT3 =
20 mA
600
2.6
3.2
50
600
3
3.6
50
2.7
600
3.3
3.9
2.3
2.9
600
3.6
2.7
3.3
600
3.9
90
2.9
3.5
600
4.6
90
3.3
4
5
80
3.7
4.7
5.1
5.4
60
4.2
5.3
5.6
6
40
4.8
6
5.8
6.2
6.6
10
5.6
Z5
6.4
6.8
7.2
15
Z6
7
7.5
7.9
15
BZX84C8V2LT1, G
Z7
7.7
8.2
8.7
BZX84C9V1LT1, G
Z8
8.5
9.1
BZX84C10LT1, G
Z9
9.4
10
BZX84C11LT1, G
Y1
10.4
11
BZX84C12LT1, G
Y2
11.4
BZX84C13LT1, G
Y3
12.4
BZX84C15LT1, G
Y4
BZX84C16LT1, G
BZX84C18LT1, G
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT1 = 5 mA
VR
Volts
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
50
1
−3.5
0
450
20
1
−3.5
0
450
50
10
1
−3.5
0
450
4.2
40
5
1
−3.5
0
450
4.5
40
5
1
−3.5
0
450
4.1
4.7
30
3
1
−3.5
−2.5
450
600
4.4
5.1
30
3
1
−3.5
0
450
500
4.5
5.4
15
3
2
−3.5
0.2
260
480
5
5.9
15
2
2
−2.7
1.2
225
400
5.2
6.3
10
1
2
−2.0
2.5
200
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7
4.5
8.0
130
11.6
20
10.2
11.6
150
10.4
11.8
10
0.1
8
5.4
9.0
130
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8
6.0
10.0
130
13
14.1
30
12.3
14
170
12.5
14.2
15
0.1
8
7.0
11.0
120
13.8
15
15.6
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13.0
110
Y5
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14.0
105
Y6
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16.0
100
BZX84C20LT1, G
Y7
18.8
20
21.2
55
18.7
21.1
225
18.9
21.4
20
0.05
14
14.4
18.0
85
BZX84C22LT1, G
Y8
20.8
22
23.3
55
20.7
23.2
250
20.9
23.4
25
0.05
15.4
16.4
20.0
85
BZX84C24LT1, G
Y9
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22.0
80
Device*
VZ1 Below
@ IZT1 = 2 mA
VZ2 Below
@ IZT2 = 0.1 mA
VZ3 Below
@ IZT3 = 10 mA
Device
Marking
Min
Nom
Max
ZZT1
Below
@ IZT1 =
2 mA
Min
Max
ZZT2
Below
@ IZT4 =
0.5 mA
Min
Max
ZZT3
Below
@ IZT3 =
10 mA
BZX84C27LT1, G
Y10
25.1
27
28.9
80
25
28.9
300
25.2
29.3
45
BZX84C30LT1, G
Y11
28
30
32
80
27.8
32
300
28.1
32.4
BZX84C33LT1, G
Y12
31
33
35
80
30.8
35
325
31.1
BZX84C36LT1, G
Y13
34
36
38
90
33.8
38
350
34.1
BZX84C39LT1, G
Y14
37
39
41
130
36.7
41
350
BZX84C43LT1, G
Y15
40
43
46
150
39.7
46
375
BZX84C47LT1, G
Y16
44
47
50
170
43.7
50
BZX84C51LT1, G
Y17
48
51
54
180
47.6
BZX84C56LT1, G
Y18
52
56
60
200
51.5
BZX84C62LT1, G
Y19
58
62
66
215
BZX84C68LT1, G
Y20
64
68
72
BZX84C75LT1, G
Y21
70
75
79
Device
IR
mA
@
Max Reverse
Leakage
Current
qVZ
(mV/k) Below
@ IZT1 = 2 mA
VR
(V)
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
0.05
18.9
21.4
25.3
70
50
0.05
21
24.4
29.4
70
35.4
55
0.05
23.1
27.4
33.4
70
38.4
60
0.05
25.2
30.4
37.4
70
37.1
41.5
70
0.05
27.3
33.4
41.2
45
40.1
46.5
80
0.05
30.1
37.6
46.6
40
375
44.1
50.5
90
0.05
32.9
42.0
51.8
40
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
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3
IR
mA
@
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device
Device
Marking
VZ (Volts) @ IZT = 5 mA
(Note 4)
Max Reverse
Leakage
Current
ZZT (W) @
IZT = 5 mA
(Note 4)
IR
mA
Min
Nom
Max
Max
@
qVZ
(mV/k)
@ IZT = 5 mA
Volts
Min
Max
C (pF)
@ VR =0,
f = 1 MHz
VR
BZX84B4V7LT1, G
T10
4.61
4.7
4.79
80
3
2
−3.5
0.2
260
BZX84B5V1LT1, G
T11
5.00
5.1
5.20
60
2
2
−2.7
1.2
225
BZX84B5V6LT1, G
T12
5.49
5.6
5.71
40
1
2
−2
2.5
200
BZX84B6V2LT1, G
T13
6.08
6.2
6.32
10
3
4
0.4
3.7
185
BZX84B6V8LT1, G
T14
6.66
6.8
6.94
15
2
4
1.2
4.5
155
BZX84B7V5LT1, G
T15
7.35
7.5
7.65
15
1
5
2.5
5.3
140
BZX84B8V2LT1, G
T16
8.04
8.2
8.36
15
0.7
5
3.2
6.2
135
BZX84B9V1LT1, G
T17
8.92
9.1
9.28
15
0.5
6
3.8
7
130
BZX84B12LT1, G
T18
11.8
12
12.2
25
0.1
8
6
10
130
BZX84B15LT1, G
T22
14.7
15
15.3
30
0.05
10.5
9.2
13
110
BZX84B16LT1, G
T19
15.7
16
16.3
40
0.05
11.2
10.4
14
105
BZX84B18LT1, G
T20
17.6
18
18.4
45
0.05
12.6
12.4
16
100
BZX84B22LT1, G
T24
21.6
22
22.4
55
0.05
15.4
16.4
20
85
BZX84B24LT1, G
T25
23.5
24
24.5
70
0.05
16.8
18.4
22
80
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
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4
BZX84B4V7LT1, BZX84C2V4LT1 Series
8
100
7
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
2
1
0
-1
-2
-3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
TYPICAL TC VALUES
VZ @ IZT
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
IZ = 1 mA
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE ( Ω )
1000
100
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0.6
0°C
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
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5
1.1
1.2
BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
I R , LEAKAGE CURRENT (μA)
TA = 25°C
100
BIAS AT
50% OF VZ NOM
10
1
1
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
100
10
1
+150°C
0.1
0.01
0.001
+25°C
0.0001
-55°C
0.00001
0
10
Figure 5. Typical Capacitance
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
100
100
TA = 25°C
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
TA = 25°C
10
1
0.1
0.01
80
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
1
0.1
0.01
12
10
10
10
30
50
70
VZ, ZENER VOLTAGE (V)
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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6
90
BZX84B4V7LT1, BZX84C2V4LT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
SEE VIEW C
3
HE
E
c
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
http://onsemi.com
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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