PHILIPS BZX84J-C22

BZX84J series
Single Zener diodes
Rev. 01 — 1 March 2007
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
n Non-repetitive peak reverse power
dissipation: ≤ 40 W
n Total power dissipation: ≤ 550 mW
n Two tolerance series: ±2 % and ±5 %
n Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
n Low differential resistance
n Small plastic package suitable for
surface-mounted design
1.3 Applications
n General regulation functions
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
forward voltage
VF
PZSM
Conditions
IF = 100 mA
non-repetitive peak reverse
power dissipation
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
Min
Typ
Max
Unit
[1]
-
-
1.1
V
[2]
-
-
40
W
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Symbol
[1]
1
2
1
2
006aaa152
[1]
The marking bar indicates the cathode.
BZX84J series
NXP Semiconductors
Single Zener diodes
3. Ordering information
Table 3.
Ordering information
Type number
BZX84J-B2V4 to
BZX84J-C75[1]
[1]
Package
Name
Description
Version
SC-90
plastic surface-mounted package; 2 leads
SOD323F
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Type number
Marking
code
Type number
Marking
code
Type number
Marking
code
Type number
Marking
code
BZX84J-B2V4
SL
BZX84J-B15
SC
BZX84J-C2V4
U3
BZX84J-C15
TV
BZX84J-B2V7
SM
BZX84J-B16
SD
BZX84J-C2V7
U4
BZX84J-C16
TW
BZX84J-B3V0
ST
BZX84J-B18
SE
BZX84J-C3V0
U9
BZX84J-C18
TX
BZX84J-B3V3
SU
BZX84J-B20
SF
BZX84J-C3V3
UA
BZX84J-C20
TY
BZX84J-B3V6
SV
BZX84J-B22
SG
BZX84J-C3V6
UB
BZX84J-C22
TZ
BZX84J-B3V9
SW
BZX84J-B24
SH
BZX84J-C3V9
UC
BZX84J-C24
U1
BZX84J-B4V3
SZ
BZX84J-B27
SK
BZX84J-C4V3
UF
BZX84J-C27
U2
BZX84J-B4V7
TA
BZX84J-B30
SN
BZX84J-C4V7
UG
BZX84J-C30
U5
BZX84J-B5V1
TD
BZX84J-B33
SP
BZX84J-C5V1
UL
BZX84J-C33
U6
BZX84J-B5V6
TE
BZX84J-B36
SR
BZX84J-C5V6
UM
BZX84J-C36
U7
BZX84J-B6V2
TH
BZX84J-B39
SS
BZX84J-C6V2
UR
BZX84J-C39
U8
BZX84J-B6V8
TK
BZX84J-B43
SX
BZX84J-C6V8
US
BZX84J-C43
UD
BZX84J-B7V5
TM
BZX84J-B47
SY
BZX84J-C7V5
UU
BZX84J-C47
UE
BZX84J-B8V2
TN
BZX84J-B51
TB
BZX84J-C8V2
UV
BZX84J-C51
UH
BZX84J-B9V1
TP
BZX84J-B56
TC
BZX84J-C9V1
UW
BZX84J-C56
UK
BZX84J-B10
S8
BZX84J-B62
TF
BZX84J-C10
TR
BZX84J-C62
UN
BZX84J-B11
S9
BZX84J-B68
TG
BZX84J-C11
TS
BZX84J-C68
UP
BZX84J-B12
SA
BZX84J-B75
TL
BZX84J-C12
TT
BZX84J-C75
UT
BZX84J-B13
SB
-
-
BZX84J-C13
TU
-
-
BZX84J_SER_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
2 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IF
forward current
Min
Max
Unit
mA
-
250
-
see
Table 8
and 9
IZSM
non-repetitive peak reverse
current
[1]
PZSM
non-repetitive peak reverse
power dissipation
[1]
-
40
W
Ptot
total power dissipation
[2]
-
550
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Tamb ≤ 25 °C
[1]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
in free air
Min
Typ
Max
Unit
[1]
-
-
230
K/W
[2]
-
-
55
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2]
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
VF
[1]
Parameter
Conditions
Min
Typ
Max
Unit
IF = 10 mA
-
-
0.9
V
IF = 100 mA
-
-
1.1
V
[1]
forward voltage
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BZX84J_SER_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
3 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
Table 8.
Characteristics per type; BZX84J-B2V4 to BZX84J-C24
Tj = 25 °C unless otherwise specified.
BZX84J Sel
-xxx
Working
voltage
Differential
resistance
Reverse
current
Temperature
coefficient
VZ (V)
rdif (Ω)
IR (µA)
SZ (mV/K)
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)[1]
d
IZSM (A)[2]
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
Min
Max
Max
Max
Max
VR (V) Min
B
2.35
2.45
400
100
50
1
C
2.2
2.6
450
100
20
500
95
500
B
2.65
2.75
C
2.5
2.9
B
2.94
3.06
C
2.8
3.2
B
3.23
3.37
C
3.1
3.5
B
3.53
3.67
C
3.4
3.8
B
3.82
3.98
C
3.7
4.1
B
4.21
4.39
C
4
4.6
B
4.61
4.79
C
4.4
5
B
5
5.2
C
4.8
5.4
B
5.49
5.71
C
5.2
6
B
6.08
6.32
C
5.8
6.6
B
6.66
6.94
C
6.4
7.2
B
7.35
7.65
C
7
7.9
B
8.04
8.36
C
7.7
8.7
B
8.92
9.28
C
8.5
9.6
B
9.8
10.2
C
9.4
10.6
B
10.8
11.2
C
10.4
11.6
B
11.8
12.2
C
11.4
12.7
IZ = 5 mA
Max
Max
Max
−3.5
0
450
12
1
−3.5
0
440
12
10
1
−3.5
0
425
12
95
5
1
−3.5
0
410
12
500
90
5
1
−3.5
0
390
12
500
90
3
1
−3.5
0
370
12
600
90
3
1
−3.5
0
350
12
500
80
3
2
−3.5
0.2
325
12
480
60
2
2
−2.7
1.2
300
12
400
40
1
2
−2
2.5
275
12
150
10
3
4
0.4
3.7
250
12
80
15
2
4
1.2
4.5
215
12
80
10
1
5
2.5
5.3
170
4
80
10
0.7
5
3.2
6.2
150
4
100
10
0.5
6
3.8
7
120
3
150
10
0.2
7
4.5
8
110
3
150
10
0.1
8
5.4
9
108
2.5
150
10
0.1
8
6
10
105
2.5
BZX84J_SER_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
4 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
Table 8.
Characteristics per type; BZX84J-B2V4 to BZX84J-C24 …continued
Tj = 25 °C unless otherwise specified.
BZX84J Sel
-xxx
Working
voltage
Differential
resistance
Reverse
current
Temperature
coefficient
VZ (V)
rdif (Ω)
IR (µA)
SZ (mV/K)
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)[1]
d
IZSM (A)[2]
13
15
16
18
20
22
24
IZ = 5 mA
IZ = 1 mA IZ = 5 mA
Min
Max
Max
Max
Max
VR (V) Min
Max
Max
Max
170
10
0.1
8
7
11
103
2.5
200
15
0.05
10.5
9.2
13
99
2
200
20
0.05
11.2
10.4
14
97
1.5
225
20
0.05
12.6
12.4
16
93
1.5
225
20
0.05
14
14.4
18
88
1.5
250
25
0.05
15.4
16.4
20
84
1.25
250
30
0.05
16.8
18.4
22
80
1.25
B
12.7
13.3
C
12.4
14.1
B
14.7
15.3
C
13.8
15.6
B
15.7
16.3
C
15.3
17.1
B
17.6
18.4
C
16.8
19.1
B
19.6
20.4
C
18.8
21.2
B
21.6
22.4
C
20.8
23.3
B
23.5
24.5
C
22.8
25.6
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
IZ = 5 mA
BZX84J_SER_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
5 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
Table 9.
Characteristics per type; BZX84J-B27 to BZX84J-C75
Tj = 25 °C unless otherwise specified.
BZX84J- Sel
xxx
Working
voltage
Differential
resistance
Reverse
current
Temperature
coefficient
VZ (V)
rdif (Ω)
IR (µA)
SZ (mV/K)
Diode
Non-repetitive
capacitance peak reverse
current
C (pF)[1]
d
IZSM (A)[2]
27
30
33
36
39
43
47
51
56
62
68
75
IZ = 2 mA
IZ = 0.5 mA IZ = 2 mA
Min
Max
Max
Max
Max
VR (V) Min
Max
Max
Max
B
26.5
27.5
250
40
0.05
18.9
21.4
25.3
73
1
C
25.1
28.9
250
40
0.05
21
24.4
29.4
66
1
275
40
0.05
23.1
27.4
33.4
60
0.9
300
60
0.05
25.2
30.4
37.4
59
0.8
300
75
0.05
27.3
33.4
41.2
58
0.7
325
80
0.05
30.1
37.6
46.6
56
0.6
325
90
0.05
32.9
42
51.8
55
0.5
350
110
0.05
35.7
46.6
57.2
52
0.4
375
120
0.05
39.2
52.2
63.8
49
0.3
400
140
0.05
43.4
58.8
71.6
44
0.3
400
160
0.05
47.6
65.6
79.8
40
0.25
400
175
0.05
52.5
73.4
88.6
35
0.2
B
29.4
30.6
C
28
32
B
32.3
33.7
C
31
35
B
35.3
36.7
C
34
38
B
38.2
39.8
C
37
41
B
42.1
43.9
C
40
46
B
46.1
47.9
C
44
50
B
50
52
C
48
54
B
54.9
57.1
C
52
60
B
60.8
63.2
C
58
66
B
66.6
69.4
C
64
72
B
73.5
76.5
C
70
79
[1]
f = 1 MHz; VR = 0 V
[2]
tp = 100 µs; square wave; Tj = 25 °C prior to surge
IZ = 2 mA
BZX84J_SER_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
6 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
mbg801
103
PZSM
(W)
mbg781
300
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
10
tp (ms)
(1) Tj = 25 °C (prior to surge)
0
0.6
0.8
1
VF (V)
Tj = 25 °C
(2) Tj = 150 °C (prior to surge)
Fig 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
mld444
0.5
SZ
(mV/K)
Fig 2. Forward current as a function of forward
voltage; typical values
mld445
12
15
SZ
(mV/K)
4V7
13
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
0
8
4V3
−0.5
2V4
4
2V7
3V9
−1
3V6
−1.5
−2
10−1
0
3V3
3V0
1
102
10
−4
10−1
1
IZ (mA)
BZX84J-B/C2V4 to BZX84J-B/C4V7
BZX84J-B/C5V1 to BZX84J-B/C15
Tj = 25 °C to 150 °C
Tj = 25 °C to 150 °C
Fig 3. Temperature coefficient as a function of
working current; typical values
Fig 4. Temperature coefficient as a function of
working current; typical values
BZX84J_SER_1
Product data sheet
102
10
IZ (mA)
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
7 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
006aaa996
50
VZ(nom) (V) = 2.7
IZ
(mA)
3.3
3.9
40
4.7
5.6
6.8
12
20
8.2
006aaa997
30
VZ(nom) (V) = 10
IZ
(mA)
25
30
15
15
20
10
18
10
22
27
33 36
5
0
0
0
2
4
6
8
10
0
10
20
30
40
VZ (V)
VZ (V)
Tj = 25 °C
Tj = 25 °C
BZX84J-B/C2V7 to BZX84J-B/C8V2
BZX84J-B/C10 to BZX84J-B/C36
All curves have a test current IZ = 5 mA.
For the curves VZ(nom) = (10, 12, 15, 18, 22) V the
test current IZ = 5 mA.
For the curves VZ(nom) = (27, 33, 36) V the test
current IZ = 2 mA.
Fig 5. Working current as a function of working
voltage; typical values
Fig 6. Working current as a function of working
voltage; typical values
BZX84J_SER_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
8 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
8. Package outline
1.35
1.15
0.80
0.65
0.5
0.3
1
2.7
2.3
1.8
1.6
2
0.25
0.10
0.40
0.25
Dimensions in mm
04-09-13
Fig 7. Package outline SOD323F (SC-90)
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
BZX84J-B2V4 to SOD323F
BZX84J-C75
[1]
Description
Packing quantity
4 mm pitch, 8 mm tape and reel
3000
10000
-115
-135
For further information and the availability of packing methods, see Section 13.
10. Soldering
3.05
2.80
2.10
1.60
solder lands
solder resist
1.65
0.95
0.50
0.60
occupied area
solder paste
0.50
(2×)
msa433
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 8. Reflow soldering footprint SOD323F (SC-90)
BZX84J_SER_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
9 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BZX84J_SER_1
20070301
Product data sheet
-
-
BZX84J_SER_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
10 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BZX84J_SER_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 1 March 2007
11 of 12
BZX84J series
NXP Semiconductors
Single Zener diodes
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 1 March 2007
Document identifier: BZX84J_SER_1