UMS CHM2179B

CHM2179b
RoHS COMPLIANT
W-band Mixer
GaAs Monolithic Microwave IC
Description
The CHM2179b is a single channel mixer.
The structure is a balanced mixer based on
a six-quarter wave ring. The non-linear
devices are high quality Schottky diodes
providing low conversion loss and very low
1/f noise.
This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode device,
air bridges, via holes through the substrate,
stepper lithography.
It is available in chip form.
LO
RF
IF
Main Features
¦ W-band LO and RF frequency range
¦ Low conversion loss
¦ IF from DC to 100MHz
¦ High LO/RF isolation
¦ High LO/AM noise rejection
¦ Very low IF noise
¦ Low LO input power
¦ Automatic assembly oriented
¦ BCB layer protection
¦ Small chip size: 1.53 x 1.17 x 0.10 mm
Main Characteristics
Tamb. = +25°C
Symbol
Parameter
Min
Typ
Max
Unit
76.5
77
GHz
F_lo, F_rf
LO, RF frequency
76
F_if
IF frequency range
[DC;100]
Lc
Conversion loss
8
dB
I_lo/rf
LO/RF isolation
22
dB
-162
dBm/Hz
N_if
IF noise @ 100kHz
Ref. : DSCHM2179b6013 - 13 Jan 06
1/9
MHz
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
W-band Mixer
CHM2179b
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHM2179b6013 - 13 Jan 06
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Mixer
CHM2179b
Electrical Characteristics
Full operating temperature range, used according to section “Typical assembly and bias
configuration”
Symbol
Parameter
Min
Typ
Unit
77
GHz
F_lo, F_rf
LO, RF frequency
F_if
IF frequency range
Lc
Conversion loss
5
8
10
dB
P_lo
LO input power
3
5.5
8
dBm
P_RF_1dB
RF input power at 1 dB
-3
0
VSWR_lo
LO port VSWR (50Ω)
2:1
2.5:1
VSWR_rf
RF port VSWR (50Ω)
2:1
2.5:1
IMP_if
IF load impedance (1)
200
Ω
I_lo/rf
LO/RF isolation
16
22
dB
R_lo_am
LO AM noise rejection (SSB)
20
27
dB
NF
Noise figure for IF=1kHz (2)
35
40
dB
Noise figure for IF=10kHz (2)
29
34
dB
Noise figure for IF=100kHz (2)
21.5
26.5
dB
Noise figure for IF=200kHz (2)
18
23
dB
+V
Positive supply voltage (3)
4.5
+I
Positive supply current (3)
1.5
Top
76
Max
[DC;100]
Operating temperature range
MHz
dBm
V
-40
2.5
mA
+100
°C
(1) The IF optimum load for conversion loss is 200Ω. For minimum noise figure this load can be lower, the
best results have been obtained on 50Ω.
(2) Measured on 200Ω IF impedance.
(3) An external resistor controls the bias current (see section “Typical Assembly and Bias Configuration”)
Absolute Maximum Ratings (1)
Symbol
Parameter
Values
Unit
+V
Supply voltage
6
V
+I
Supply current
2.5
mA
Maximum peak input power overdrive at LO port (2)
10
dBm
Maximum input power at RF port (3)
3
dBm
-55 to +125
°C
P_lo
P_rf_cw
Tstg
Storage temperature range
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. : DSCHM2179b6013 - 13 Jan 06
3/9
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Mixer
CHM2179b
(3) Continuous wave mode.
Ref. : DSCHM2179b6013 - 13 Jan 06
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
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Specifications subject to change without notice
W-band Mixer
CHM2179b
Chip Mechanical Data and Pin References
3
2
1
4
5
6
11
10 9
8
7
Unit = µm
External chip size = 1530 x 1170
Chip thickness = 100 +/- 10
HF Pads (2,5) = 105 X 86 (BCB opening)
DC/IF Pads = 86 x 83 (BCB opening)
Pin number
Pin name
1,3,4,6
2
LO
5
7
8
9
10
11
RF
GND
IF
C_ext
+V
Ref. : DSCHM2179b6013 - 13 Jan 06
Description
Ground: should not be bonded. If required,
please ask for more information.
LO input
RF input
Ground (optional)
Not Connected
IF output
Bias decoupling
Positive supply voltage
5/9
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
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Specifications subject to change without notice
W-band Mixer
CHM2179b
Typical Bias and IF Configuration
Several external configurations are possible for bias and IF. The objective is to give
flexibility for the integration.
As this component is mainly dedicated to low IF use, there are several possibilities for
interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200Ω,
however depending on the IF amplifier noise characteristic this load can be modified in order to
optimise the noise figure. A series capacitor, between IF output and the load is recommended.
Due to high sensitivity to electrical discharges an integrated resistance is used and two ports
are available for biasing. One is for the connection of a decoupling capacitor (C_ext) and the
other one is for the supply voltage connection through an external series resistance (+V port).
However, in order to keep the compatibility with the CHM2179, only the “C_ext” port can be
used.
+V
+V
R_load_IF
R_load_IF
C_bias
R_bias1
C_ext
+V
C_bias
C_IF
R_bias2
C_IF
IF
C_ext
+V
IF
1k
1k
RF
LO
RF
LO
Other possible configuration
Recommended external bias and
IFconfiguration
(Compatible with the previous version)
The recommended values for external components are:
C_bias
R_bias1
R_bias2
R_load_IF
R_bias*C >> 1/F_IF
2.9kΩ for 1mA current consumption (V = 4.5V, typical LO
power)
R_bias2 = R_bias1 + 1kΩ
From 50 to 200Ω
Notes::
1. R_bias = R_bias1 + 1kΩ when “+V” port is used, otherwize R_bias = R_bias2
2. R_bias can be adjusted if necessary; This allows to optimise the performances when some
parameters are different from recommended ones (Supply voltage, LO power …). However
maximum ratings for the current have to be taken into account.
3. A series capacitor at IF outputs is recommended for DC decoupling.
Ref. : DSCHM2179b6013 - 13 Jan 06
6/9
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Mixer
CHM2179b
Typical Assembly and RF Configuration
In order to use acceptable wire bonding length, compatible with automatic
pick and place and wire bonding equipment, an external matching network is
proposed on low dielectric constant substrate.
Substrate : RO.3003
εr=3
H=127 µm
Substrate : RO.3003
εr=3
H=127 µm
Example of integration using low dielectric constant substrate : Er=3,
heigh=0.127mm (dimensions are in µm)
W=500
L=985
W=250
L=180
W1=330
W2=200
L=120
W=330
L=125
W=330
L=200
W1=330
W2=200
L=200
W=250
L=300
W1=200
W2=330
L=200
Ref. : DSCHM2179b6013 - 13 Jan 06
W=200
L=729
W1=200
W2=330
L=150
W=330
L=200
W=330
L=225
7/9
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Mixer
CHM2179b
Unit =µm
Ref. : DSCHM2179b6013 - 13 Jan 06
8/9
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Mixer
CHM2179b
Ordering Information
Chip form
:
CHM2179b98F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces
all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised
for use as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHM2179b6013 - 13 Jan 06
9/9
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice