CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM8208JPT CURRENT 7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT D1 D1 D2 D2 8 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 4 1 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM8208JPT Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V Maximum Drain Current - Continuous 7 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 25 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W 2007-11 RATING CHARACTERISTIC CURVES ( CHM8208JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 1 µA VGS = 12V,VDS = 0 V +10 nA VGS = -12V, VDS = 0 V -10 nA 1.2 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA 0.5 VGS=4.5V, ID=7A 18 22 VGS=2.5V, ID=5.6A 24 32 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 40 VDS = 25V, VGS = 0V, f = 1.0 MHz pF 115 15 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr 4.2 VDS=10V, ID=7A 5.6 nC 1.0 VGS=4.5V 2.4 V DD= 10V 0.34 0.68 Rise Time I D = 1A , 0.68 1.72 t off Turn-Off Time RGEN= 6 Ω 3.58 7.16 tf Fall Time 2 4 VGS = 4.5 V uS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I = 7A , VGS = 0 V (Note 1) S (Note 2) 7 A 1.2 V RATING CHARACTERISTIC CURVES ( CHM8208JPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 10 50 V G S =4.5,3.5,2.5V 8 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 40 30 20 VG S =1 . 5 V 6 4 TJ=-55°C 10 2 0 0 TJ=125°C 0 0.8 0.2 0.4 0.6 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 VGS=4.5V ID=7A 1.9 R DS(on) , NORMALIZED 4 3 2 1 0 0 1 2 3 4 Qg , TOTAL GATE CHARGE (nC) 5 6 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) VDS=48V ID=3.7A THRESHOLD VOLTAGE 2.5 2.2 5 Vth , NORMALIZED GATE-SOURCE 0.5 1.0 1.5 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge 1.3 TJ=25°C 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200