Central CMXT2207 SURFACE MOUNT SUPERmini™ DUAL COMPLEMENTARY SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: X07 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA NPN PNP 75 40 6.0 60 60 5.0 600 350 UNITS V V V mA mW -65 to +150 357 °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=60V 10 ICBO VCB=50V 10 ICBO VCB=60V, TA=125°C 10 ICBO VCB=50V, TA=125°C 10 IEBO VEB=3.0V 10 ICEV VCE=60V, VEB=3.0V 10 ICEV VCE=30V, VBE=0.5V 50 BVCBO IC=10µA 75 60 BVCEO IC=10mA 40 60 BVEBO IE=10µA 6.0 5.0 VCE(SAT) IC=150mA, IB=15mA 0.3 0.4 VCE(SAT) IC=500mA, IB=50mA 1.0 1.6 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 1.3 VBE(SAT) IC=500mA, IB=50mA 2.0 2.6 hFE VCE=10V, IC=0.1mA 35 75 hFE VCE=10V, IC=1.0mA 50 100 hFE VCE=10V, IC=10mA 75 100 hFE VCE=10V, IC=150mA 100 300 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 50 fT VCE=20V, IC=20mA, f=100MHz 300 fT VCE=20V, IC=50mA, f=100MHz 200 UNITS nA nA µA µA nA nA nA V V V V V V V MHz MHz R2 (06-August 2003) Central TM Semiconductor Corp. CMXT2207 SURFACE MOUNT SUPERmini™ DUAL COMPLEMENTARY SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) PNP NPN SYMBOL TEST CONDITIONS MIN MAX MIN MAX Cob VCB=10V, IE=0, f=1.0MHz 8.0 8.0 Cib VEB=0.5V, IC=0, f=1.0MHz 25 Cib VEB=2.0V, IC=0, f=1.0MHz 30 hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 NF VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz 4.0 ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 45 td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 10 tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 40 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ts VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 UNITS pF pF pF kΩ kΩ x10-4 x10-4 µmhos µmhos ps dB ns ns ns ns ns ns ns ns SOT-26 CASE - MECHANICAL OUTLINE 6 5 4 Q2 Q1 1 2 3 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: X07 R2 (06-August 2003)