CYPRESS CY7C1471V25

CY7C1471V25
CY7C1473V25
CY7C1475V25
72-Mbit (2M x 36/4M x 18/1M x 72)
Flow-Through SRAM with NoBL™ Architecture
Functional Description[1]
Features
• No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
• Supports up to 133 MHz bus operations with zero wait states
• Data is transferred on every clock
• Pin compatible and functionally equivalent to ZBT™ devices
• Internally self timed output buffer control to eliminate the
need to use OE
• Registered inputs for flow through operation
• Byte Write capability
• 2.5V/1.8V IO supply (VDDQ)
• Fast clock-to-output times
— 6.5 ns (for 133-MHz device)
• Clock Enable (CEN) pin to enable clock and suspend
operation
• Synchronous self timed writes
• Asynchronous Output Enable (OE)
• CY7C1471V25, CY7C1473V25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-Ball FBGA package. CY7C1475V25
available in Pb-free and non-Pb-free 209-Ball FBGA
package.
• Three Chip Enables (CE1, CE2, CE3) for simple depth
expansion.
• Automatic power down feature available using ZZ mode or
CE deselect.
• IEEE 1149.1 JTAG Boundary Scan compatible
• Burst Capability - linear or interleaved burst order
• Low standby power
The CY7C1471V25, CY7C1473V25, and CY7C1475V25 are
2.5V, 2M x 36/4M x 18/1M x 72 synchronous flow through burst
SRAMs designed specifically to support unlimited true
back-to-back read or write operations without the insertion of
wait states. The CY7C1471V25, CY7C1473V25, and
CY7C1475V25 are equipped with the advanced No Bus
Latency (NoBL) logic required to enable consecutive read or
write operations with data transferred on every clock cycle.
This feature dramatically improves the throughput of data
through the SRAM, especially in systems that require frequent
write-read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by two or four Byte Write Select
(BWX) and a Write Enable (WE) input. All writes are conducted
with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Selection Guide
133 MHz
100 MHz
Unit
Maximum Access Time
6.5
8.5
ns
Maximum Operating Current
305
275
mA
Maximum CMOS Standby Current
120
120
mA
Note
1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.
Cypress Semiconductor Corporation
Document #: 38-05287 Rev. *I
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised July 04, 2007
CY7C1471V25
CY7C1473V25
CY7C1475V25
Logic Block Diagram – CY7C1471V25 (2M x 36)
ADDRESS
REGISTER
A0, A1, A
A1
D1
A0
D0
MODE
CLK
CEN
CE
C
ADV/LD
C
BURST
LOGIC
Q1 A1'
A0'
Q0
WRITE ADDRESS
REGISTER
ADV/LD
BW A
WRITE
DRIVERS
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BW B
BW C
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
BW D
WE
INPUT
REGISTER
OE
CE1
CE2
CE3
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
DQs
DQP A
DQP B
DQP C
DQP D
E
E
READ LOGIC
SLEEP
CONTROL
ZZ
Logic Block Diagram – CY7C1473V25 (4M x 18)
ADDRESS
REGISTER
A0, A1, A
A1
D1
A0
D0
MODE
CLK
CEN
CE
C
ADV/LD
C
BURST
LOGIC
A1'
Q1
A0'
Q0
WRITE ADDRESS
REGISTER
ADV/LD
BW A
BW B
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
WE
OE
CE1
CE2
CE3
ZZ
Document #: 38-05287 Rev. *I
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
DQs
DQP A
DQP B
E
INPUT
E
REGISTER
READ LOGIC
SLEEP
CONTROL
Page 2 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Logic Block Diagram – CY7C1475V25 (1M x 72)
ADDRESS
REGISTER 0
A0, A1, A
MODE
CLK
ADV/LD
C
C
CEN
A1
A1'
D1
Q1
A0
A0'
D0 BURST Q0
LOGIC
WRITE ADDRESS
REGISTER 2
WRITE ADDRESS
REGISTER 1
ADV/LD
BW a
BW b
BW c
BW d
BW e
BW f
BW g
BW h
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
E
O
U
T
P
U
T
B
U
F
F
E
R
S
E
DQ s
DQ Pa
DQ Pb
DQ Pc
DQ Pd
DQ Pe
DQ Pf
DQ Pg
DQ Ph
WE
INPUT
E
REGISTER 1
OE
CE1
CE2
CE3
ZZ
Document #: 38-05287 Rev. *I
INPUT
E
REGISTER 0
READ LOGIC
Sleep Control
Page 3 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Pin Configurations
Document #: 38-05287 Rev. *I
A
40
41
42
43
44
45
46
47
48
49
50
A
A
A
A
A
A
A
A
A
37
A0
VSS
36
A1
VDD
35
A
39
34
A
NC/144M
33
A
38
32
NC/288M
31
81
A
82
A
83
A
84
ADV/LD
85
OE
86
90
CEN
VSS
91
WE
VDD
92
88
CE3
93
CLK
BWA
94
89
BWC
96
BWB
BWD
97
95
CE2
98
A
CE1
87
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
CY7C1471V25
A
BYTE D
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
BYTE C
DQPC
DQC
DQC
VDDQ
VSS
DQC
DQC
DQC
DQC
VSS
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSS
DQD
DQD
DQD
DQD
VSS
VDDQ
DQD
DQD
DQPD
99
100
A
100-Pin TQFP Pinout
DQPB
DQB
DQB
VDDQ
VSS
DQB
DQB
DQB
DQB
VSS
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSS
DQA
DQA
DQA
DQA
VSS
VDDQ
DQA
DQA
DQPA
BYTE B
BYTE A
Page 4 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Pin Configurations (continued)
Document #: 38-05287 Rev. *I
A
40
41
42
43
44
45
46
47
48
49
50
A
A
A
A
A
A
A
A
A
37
A0
VSS
36
A1
VDD
35
A
39
34
A
NC/144M
33
A
38
32
NC/288M
31
81
A
82
A
83
A
84
ADV/LD
85
OE
86
90
CEN
VSS
91
WE
VDD
92
88
CE3
93
CLK
BWA
94
89
NC
BWB
95
NC
97
96
CE2
98
A
CE1
87
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
CY7C1473V25
A
BYTE B
VDDQ
VSS
NC
NC
DQB
DQB
VSS
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSS
DQB
DQB
DQPB
NC
VSS
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
NC
NC
NC
99
100
A
100-Pin TQFP Pinout
A
NC
NC
VDDQ
VSS
NC
DQPA
DQA
DQA
VSS
VDDQ
DQA
DQA
VSS
NC
VDD
ZZ
BYTE A
DQA
DQA
VDDQ
VSS
DQA
DQA
NC
NC
VSS
VDDQ
NC
NC
NC
Page 5 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Pin Configurations (continued)
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1471V25 (2M x 36)
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/576M
1
A
CE1
BWC
BWB
CE3
CEN
ADV/LD
A
A
NC
NC/1G
A
CE2
A
A
VDDQ
VSS
VSS
VSS
VDD
VDDQ
VDDQ
VSS
VSS
WE
VSS
OE
NC
DQC
BWA
VSS
CLK
DQPC
DQC
BWD
VSS
VDD
VDDQ
NC
DQB
DQPB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
R
NC
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
NC
DQD
DQC
NC
DQD
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
DQB
NC
DQA
DQB
ZZ
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQPD
DQD
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
NC/144M
A
A
A
MODE
A
A
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
DQA
DQPA
TDI
NC
A1
TDO
A
A
A
NC/288M
TMS
A0
TCK
A
A
A
A
CY7C1473V25 (4M x 18)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
4
5
6
7
8
9
10
11
NC/576M
A
CE1
BWB
NC
CE3
CEN
ADV/LD
A
A
A
BWA
VSS
CLK
WE
VSS
VSS
OE
VSS
VDD
A
A
VDDQ
DQPA
DQA
NC/1G
A
CE2
NC
NC
NC
NC
DQB
VDDQ
VDDQ
VSS
VDD
VSS
VSS
VSS
VDDQ
NC
NC
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
NC
NC
NC
DQB
DQB
VDDQ
VDDQ
NC
VDDQ
VDD
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
NC
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
NC
NC
DQA
DQA
DQA
ZZ
NC
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
DQPB
NC
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
VDD
VSS
VDDQ
VDDQ
DQA
NC
NC
NC
NC/144M
A
A
A
TDI
NC
A1
VSS
NC
TDO
A
A
A
NC/288M
MODE
A
A
A
TMS
A0
TCK
A
A
A
A
DQB
NC
NC
Document #: 38-05287 Rev. *I
NC
Page 6 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Pin Configurations (continued)
209-Ball FBGA (14 x 22 x 1.76 mm) Pinout
CY7C1475V25 (1M × 72)
1
2
3
4
5
6
7
8
9
10
11
A
DQg
DQg
A
CE2
A
ADV/LD
A
CE3
A
DQb
DQb
B
DQg
DQg
BWSc
BWSg
NC
WE
A
BWSb
BWSf
DQb
DQb
C
DQg
DQg
BWSh
BWSd NC/576M
CE1
NC
BWSe
BWSa
DQb
DQb
D
DQg
DQg
VSS
NC
NC/1G
OE
NC
NC
VSS
DQb
DQb
E
DQPg
DQPc
VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
DQPf
DQPb
F
DQc
DQc
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQf
DQf
G
DQc
DQc
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQf
DQf
H
DQc
DQc
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQf
DQf
J
DQc
DQc
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQf
DQf
K
NC
NC
CLK
NC
VSS
CEN
VSS
NC
NC
NC
NC
L
DQh
DQh
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQa
DQa
M
DQh
DQh
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQa
DQa
N
DQh
DQh
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQa
DQa
P
DQh
DQh
VSS
VSS
VSS
ZZ
VSS
VSS
VSS
DQa
DQa
R
DQPd
DQPh
VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
DQPa
DQPe
T
DQd
DQd
VSS
NC
NC
MODE
NC
NC
VSS
DQe
DQe
U
DQd
DQd
NC/144M
A
A
A
A
A
NC/288M
DQe
DQe
V
DQd
DQd
A
A
A
A1
A
A
A
DQe
DQe
W
DQd
DQd
TMS
TDI
A
A0
A
TDO
TCK
DQe
DQe
Document #: 38-05287 Rev. *I
Page 7 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Pin Definitions
Name
IO
Description
A0, A1, A
InputSynchronous
Address Inputs used to select one of the address locations. Sampled at the rising edge
of the CLK. A[1:0] are fed to the two-bit burst counter.
BWA, BWB,
BWC, BWD,
BWE, BWF,
BWG, BWH
InputSynchronous
Byte Write Inputs, Active LOW. Qualified with WE to conduct writes to the SRAM.
Sampled on the rising edge of CLK.
WE
InputSynchronous
Write Enable Input, Active LOW. Sampled on the rising edge of CLK if CEN is active LOW.
This signal must be asserted LOW to initiate a write sequence.
ADV/LD
InputSynchronous
Advance/Load Input. Used to advance the on-chip address counter or load a new address.
When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When
LOW, a new address can be loaded into the device for an access. After being deselected,
ADV/LD must be driven LOW to load a new address.
CLK
InputClock
CE1
InputSynchronous
Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction
with CE2 and CE3 to select or deselect the device.
CE2
InputSynchronous
Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE3 to select or deselect the device.
CE3
InputSynchronous
Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction
with CE1 and CE2 to select or deselect the device.
OE
InputAsynchronous
Output Enable, Asynchronous Input, Active LOW. Combined with the synchronous logic
block inside the device to control the direction of the IO pins. When LOW, the IO pins are
enabled to behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as
input data pins. OE is masked during the data portion of a write sequence, during the first
clock when emerging from a deselected state, when the device has been deselected.
CEN
InputSynchronous
Clock Enable Input, Active LOW. When asserted LOW the clock signal is recognized by
the SRAM. When deasserted HIGH the clock signal is masked. Because deasserting CEN
does not deselect the device, CEN can be used to extend the previous cycle when required.
ZZ
InputAsynchronous
ZZ “Sleep” Input. This active HIGH input places the device in a non-time-critical “sleep”
condition with data integrity preserved. For normal operation, this pin has to be LOW or left
floating. ZZ pin has an internal pull down.
DQs
IOSynchronous
Bidirectional Data IO Lines. As inputs, they feed into an on-chip data register that is
triggered by the rising edge of CLK. As outputs, they deliver the data contained in the
memory location specified by the addresses presented during the previous clock rise of the
read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the
pins behave as outputs. When HIGH, DQs and DQPX are placed in a tri-state condition.The
outputs are automatically tri-stated during the data portion of a write sequence, during the
first clock when emerging from a deselected state, and when the device is deselected,
regardless of the state of OE.
DQPX
IOSynchronous
Bidirectional Data Parity IO Lines. Functionally, these signals are identical to DQs. During
write sequences, DQPX is controlled by BWX correspondingly.
MODE
Input Strap Pin
Mode Input. Selects the burst order of the device.
When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects
interleaved burst sequence.
VDD
Power Supply
Power supply inputs to the core of the device.
VDDQ
VSS
TDO
IO Power Supply
Ground
Clock Input. Captures all synchronous inputs to the device. CLK is qualified with CEN.
CLK is only recognized if CEN is active LOW.
Power supply for the IO circuitry.
Ground for the device.
JTAG serial output Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the
Synchronous
JTAG feature is not used, this pin must be left unconnected. This pin is not available on
TQFP packages.
Document #: 38-05287 Rev. *I
Page 8 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Pin Definitions (continued)
Name
IO
Description
TDI
JTAG serial input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature
is not used, this pin can be left floating or connected to VDD through a pull up resistor. This
pin is not available on TQFP packages.
TMS
JTAG serial input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature
is not used, this pin can be disconnected or connected to VDD. This pin is not available on
TQFP packages.
TCK
JTAG-Clock
NC
-
Clock input to the JTAG circuitry. If the JTAG feature is not used, this pin must be
connected to VSS. This pin is not available on TQFP packages.
No Connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are address
expansion pins and are not internally connected to the die.
Functional Overview
The CY7C1471V25, CY7C1473V25, and CY7C1475V25 are
synchronous flow through burst SRAMs designed specifically
to eliminate wait states during write-read transitions. All
synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock signal is qualified with
the Clock Enable input signal (CEN). If CEN is HIGH, the clock
signal is not recognized and all internal states are maintained.
All synchronous operations are qualified with CEN. Maximum
access delay from the clock rise (tCDV) is 6.5 ns (133-MHz
device).
Accesses are initiated by asserting all three Chip Enables
(CE1, CE2, CE3) active at the rising edge of the clock. If CEN
is active LOW and ADV/LD is asserted LOW, the address
presented to the device is latched. The access can either be
a read or write operation, depending on the status of the Write
Enable (WE). Byte Write Select (BWX) can be used to conduct
Byte Write operations.
Write operations are qualified by the WE. All writes are
simplified with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) simplify depth expansion.
All operations (reads, writes, and deselects) are pipelined.
ADV/LD must be driven LOW after the device is deselected to
load a new address for the next operation.
Single Read Accesses
A read access is initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are ALL asserted active, (3) WE is deasserted HIGH,
and (4) ADV/LD is asserted LOW. The address presented to
the address inputs is latched into the Address Register and
presented to the memory array and control logic. The control
logic determines that a read access is in progress and allows
the requested data to propagate to the output buffers. The data
is available within 6.5 ns (133-MHz device) provided OE is
active LOW. After the first clock of the read access, the output
buffers are controlled by OE and the internal control logic. OE
must be driven LOW to drive out the requested data. On the
subsequent clock, another operation (read/write/deselect) can
be initiated. When the SRAM is deselected at clock rise by one
of the chip enable signals, the output is tri-stated immediately.
Document #: 38-05287 Rev. *I
Burst Read Accesses
The CY7C1471V25, CY7C1473V25, and CY7C1475V25 has
an on-chip burst counter that enables the user the ability to
supply a single address and conduct up to four reads without
reasserting the address inputs. ADV/LD must be driven LOW
to load a new address into the SRAM, as described in the
Single Read Access section. The sequence of the burst
counter is determined by the MODE input signal. A LOW input
on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in
the burst sequence, and wraps around when incremented
sufficiently. A HIGH input on ADV/LD increments the internal
burst counter regardless of the state of chip enable inputs or
WE. WE is latched at the beginning of a burst cycle. Therefore,
the type of access (read or write) is maintained throughout the
burst sequence.
Single Write Accesses
Write accesses are initiated when these conditions are
satisfied at clock rise:
• CEN is asserted LOW
• CE1, CE2, and CE3 are ALL asserted active
• WE is asserted LOW.
The address presented to the address bus is loaded into the
Address Register. The write signals are latched into the
Control Logic block. The data lines are automatically tri-stated
regardless of the state of the OE input signal. This allows the
external logic to present the data on DQs and DQPX.
On the next clock rise the data presented to DQs and DQPX
(or a subset for Byte Write operations, see “Truth Table for
Read/Write” on page 12 for details) inputs is latched into the
device and the write is complete. Additional accesses
(read/write/deselect) can be initiated on this cycle.
The data written during the write operation is controlled by
BWX signals. The CY7C1471V25, CY7C1473V25, and
CY7C1475V25 provide Byte Write capability that is described
in the “Truth Table for Read/Write” on page 12. The input WE
with the selected BWx input selectively writes to only the
desired bytes. Bytes not selected during a Byte Write
operation remain unaltered. A synchronous self timed write
mechanism is provided to simplify the write operations. Byte
Write capability is included to greatly simplify
read/modify/write sequences, which can be reduced to simple
byte write operations.
Page 9 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Because
the
CY7C1471V25,
CY7C1473V25,
and
CY7C1475V25 are common IO devices, data must not be
driven into the device while the outputs are active. The OE can
be deasserted HIGH before presenting data to the DQs and
DQPX inputs. This tri-states the output drivers. As a safety
precaution, DQs and DQPX are automatically tri-stated during
the data portion of a write cycle, regardless of the state of OE.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
Burst Write Accesses
01
00
11
10
The CY7C1471V25, CY7C1473V25, and CY7C1475V25
have an on-chip burst counter that enables the user to supply
a single address and conduct up to four Write operations
without reasserting the address inputs. ADV/LD must be
driven LOW to load the initial address, as described in the
Single Write Access section. When ADV/LD is driven HIGH on
the subsequent clock rise, the Chip Enables (CE1, CE2, and
CE3) and WE inputs are ignored and the burst counter is incremented. The correct BWX inputs must be driven in each cycle
of the Burst Write, to write the correct bytes of data.
10
11
00
01
11
10
01
00
Fourth
Address
A1: A0
Linear Burst Address Table
(MODE = GND)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Sleep Mode
00
01
10
11
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected before entering
the “sleep” mode. CE1, CE2, and CE3, must remain inactive
for the duration of tZZREC after the ZZ input returns LOW.
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
IDDZZ
Sleep mode standby current
Test Conditions
ZZ > VDD – 0.2V
tZZS
Device operation to ZZ
ZZ > VDD – 0.2V
tZZREC
ZZ recovery time
ZZ < 0.2V
tZZI
ZZ active to sleep current
This parameter is sampled
tRZZI
ZZ Inactive to exit sleep current
This parameter is sampled
Document #: 38-05287 Rev. *I
Min
Max
Unit
120
mA
2tCYC
ns
2tCYC
ns
2tCYC
0
ns
ns
Page 10 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Truth Table
The truth table for CY7C1471V25, CY7C1473V25, and CY7C1475V25 follows.[2, 3, 4, 5, 6, 7, 8]
Operation
Address CE CE
1
2 CE3 ZZ
Used
ADV/LD
WE
BWX
OE
CEN
CLK
DQ
Deselect Cycle
None
H
X
X
L
L
X
X
X
L
L->H
Tri-State
Deselect Cycle
None
X
X
H
L
L
X
X
X
L
L->H
Tri-State
Deselect Cycle
None
X
L
X
L
L
X
X
X
L
L->H
Tri-State
Tri-State
Continue Deselect Cycle
None
X
X
X
L
H
X
X
X
L
L->H
External
L
H
L
L
L
H
X
L
L
L->H Data Out (Q)
Next
X
X
X
L
H
X
X
L
L
L->H Data Out (Q)
External
L
H
L
L
L
H
X
H
L
L->H
Tri-State
Next
X
X
X
L
H
X
X
H
L
L->H
Tri-State
External
L
H
L
L
L
L
L
X
L
L->H
Data In (D)
Write Cycle
(Continue Burst)
Next
X
X
X
L
H
X
L
X
L
L->H
Data In (D)
NOP/Write Abort
(Begin Burst)
None
L
H
L
L
L
L
H
X
L
L->H
Tri-State
Write Abort
(Continue Burst)
Next
X
X
X
L
H
X
H
X
L
L->H
Tri-State
Current
X
X
X
L
X
X
X
X
H
L->H
-
None
X
X
X
H
X
X
X
X
X
X
Tri-State
Read Cycle
(Begin Burst)
Read Cycle
(Continue Burst)
NOP/Dummy Read
(Begin Burst)
Dummy Read
(Continue Burst)
Write Cycle
(Begin Burst)
Ignore Clock Edge (Stall)
Sleep Mode
Notes
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW. BWX = L signifies at least one Byte Write Select is active, BWX = Valid signifies that the desired Byte Write
Selects are asserted, see “Truth Table for Read/Write” on page 12 for details.
3. Write is defined by BWX, and WE. See “Truth Table for Read/Write” on page 12.
4. When a write cycle is detected, all IOs are tri-stated, even during byte writes.
5. The DQs and DQPX pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. CEN = H, inserts wait states.
7. Device powers up deselected with the IOs in a tri-state condition, regardless of OE.
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQPX = tri-state when OE
is inactive or when the device is deselected, and DQs and DQPX = data when OE is active.
Document #: 38-05287 Rev. *I
Page 11 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Truth Table for Read/Write
The read-write truth table for CY7C1471V25 follows.[2, 3, 9]
Function
WE
BWA
BWB
BWC
BWD
Read
H
X
X
X
X
Write No bytes written
L
H
H
H
H
Write Byte A – (DQA and DQPA)
L
L
H
H
H
Write Byte B – (DQB and DQPB)
L
H
L
H
H
Write Byte C – (DQC and DQPC)
L
H
H
L
H
Write Byte D – (DQD and DQPD)
L
H
H
H
L
Write All Bytes
L
L
L
L
L
Truth Table for Read/Write
The read-write truth table for CY7C1473V25 follows.[2, 3, 9]
Function
BWb
WE
BWa
Read
H
X
X
Write – No Bytes Written
L
H
H
Write Byte a – (DQa and DQPa)
L
H
L
Write Byte b – (DQb and DQPb)
L
L
H
Write Both Bytes
L
L
L
Truth Table for Read/Write
The read-write truth table for CY7C1475V25 follows.[2, 3, 9]
Function
WE
BWx
Read
H
X
Write – No Bytes Written
L
H
Write Byte X − (DQx and DQPx)
L
L
Write All Bytes
L
All BW = L
Note
9. Table lists only a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write is based on which byte write is active.
Document #: 38-05287 Rev. *I
Page 12 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
IEEE 1149.1 Serial Boundary Scan (JTAG)
Test Access Port (TAP)
The CY7C1471V25, CY7C1473V25, and CY7C1475V25 and
incorporate a serial boundary scan test access port (TAP).
This port operates in accordance with IEEE Standard
1149.1-1990 but does not have the set of functions required
for full 1149.1 compliance. These functions from the IEEE
specification are excluded because their inclusion places an
added delay in the critical speed path of the SRAM. Note that
the TAP controller functions in a manner that does not conflict
with the operation of other devices using 1149.1 fully compliant
TAPs. The TAP operates using JEDEC-standard 2.5V or 1.8V
IO logic levels.
Test Clock (TCK)
The CY7C1471V25, CY7C1473V25, and CY7C1475V25
contain a TAP controller, instruction register, boundary scan
register, bypass register, and ID register.
Test Data-In (TDI)
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull up resistor. TDO must be
left unconnected. During power up, the device comes up in a
reset state, which does not interfere with the operation of the
device.
TAP Controller State Diagram
1
TEST-LOGIC
RESET
0
RUN-TEST/
IDLE
0
1
SELECT
DR-SCA N
1
SELECT
IR-SCAN
0
1
1
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this ball unconnected if the TAP is not used. The ball is
pulled up internally, resulting in a logic HIGH level.
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information about loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) of any register.
(See TAP Controller Block Diagram.)
Test Data-Out (TDO)
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See Tap Controller State Diagram.)
TAP Controller Block Diagram
0
1
CAPTURE-DR
0
CAPTURE-IR
0
Bypass Register
0
SHIFT-DR
0
2 1 0
SHIFT-IR
1
0
TDI
1
EXIT1-DR
1
EXIT1-IR
0
Selection
Circuitry
Instruction Register
Selection
Circuitry
TDO
31 30 29 . . . 2 1 0
1
Identification Register
0
x . . . . . 2 1 0
PAUSE-DR
0
PAUSE-IR
0
Boundary Scan Register
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-DR
UPDATE-IR
TCK
TM S
1
0
1
TAP CONTROLLER
0
The 0/1 next to each state represents the value of TMS at the
rising edge of TCK.
Performing a TAP Reset
A RESET is performed by forcing TMS HIGH (VDD) for five
rising edges of TCK. This RESET does not affect the operation
of the SRAM and may be performed while the SRAM is
operating.
During power up, the TAP is reset internally to ensure that
TDO comes up in a High-Z state.
Document #: 38-05287 Rev. *I
Page 13 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
TAP Registers
Registers are connected between the TDI and TDO balls and
enable data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the “TAP Controller Block
Diagram” on page 13. During power up, the instruction register
is loaded with the IDCODE instruction. It is also loaded with
the IDCODE instruction if the controller is placed in a reset
state as described in the previous section.
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary ‘01’ pattern to
enable fault isolation of the board-level serial test data path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM.
The boundary scan register is loaded with the contents of the
RAM IO ring when the TAP controller is in the Capture-DR
state and is then placed between the TDI and TDO balls when
the controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions can be used
to capture the contents of the IO ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in “Identification Register Definitions” on page 17.
TAP Instruction Set
Overview
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in “Identification
Codes” on page 18. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
Document #: 38-05287 Rev. *I
The TAP controller used in this SRAM is not fully compliant to
the 1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented.
The TAP controller cannot be used to load address data or
control signals into the SRAM and cannot preload the IO
buffers. The SRAM does not implement the 1149.1 commands
EXTEST or INTEST or the PRELOAD portion of
SAMPLE/PRELOAD; rather, it performs a capture of the IO
ring when these instructions are executed.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction after it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
EXTEST
EXTEST is a mandatory 1149.1 instruction which is to be
executed whenever the instruction register is loaded with all
0s. EXTEST is not implemented in this SRAM TAP controller,
and therefore this device is not compliant to 1149.1. The TAP
controller does recognize an all-0 instruction.
When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction has been loaded. There is one difference between
the two instructions. Unlike the SAMPLE/PRELOAD
instruction, EXTEST places the SRAM outputs in a High-Z
state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and
enables the IDCODE to be shifted out of the device when the
TAP controller enters the Shift-DR state.
The IDCODE instruction is loaded into the instruction register
during power up or whenever the TAP controller is in a test
logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The
PRELOAD portion of this instruction is not implemented, so
the device TAP controller is not fully 1149.1 compliant.
When the SAMPLE/PRELOAD instruction is loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and bidirectional balls
is captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
may undergo a transition. The TAP may then try to capture a
Page 14 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Note that since the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction has the same
effect as the Pause-DR command.
signal while in transition (metastable state). This does not
harm the device, but there is no guarantee as to the value that
is captured. Repeatable results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus
hold time (tCS plus tCH).
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
The SRAM clock input might not be captured correctly if there
is no way in a design to stop (or slow) the clock during a
SAMPLE/PRELOAD instruction. If this is an issue, it is still
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
Reserved
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
1
2
Test Clock
(TCK )
3
t TH
t TM SS
t TM SH
t TDIS
t TDIH
t
TL
4
5
6
t CY C
Test M ode Select
(TM S)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CA RE
Document #: 38-05287 Rev. *I
UNDEFINED
Page 15 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
TAP AC Switching Characteristics
Over the Operating Range[10, 11]
Parameter
Description
Min
Max
Unit
Clock
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH Time
20
ns
tTL
TCK Clock LOW Time
20
ns
50
ns
20
MHz
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
ns
0
ns
5
ns
Setup Times
tTMSS
TMS Setup to TCK Clock Rise
tTDIS
TDI Setup to TCK Clock Rise
5
ns
tCS
Capture Setup to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Hold Times
Notes
10.tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
11.Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document #: 38-05287 Rev. *I
Page 16 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
1.8V TAP AC Test Conditions
2.5V TAP AC Test Conditions
Input pulse levels ..................................... 0.2V to VDDQ – 0.2
Input pulse levels................................................. VSS to 2.5V
Input rise and fall time..................................................... 1 ns
Input rise and fall time .....................................................1 ns
Input timing reference levels ...........................................0.9V
Input timing reference levels......................................... 1.25V
Output reference levels...................................................0.9V
Output reference levels ................................................ 1.25V
Test load termination supply voltage...............................0.9V
Test load termination supply voltage ............................ 1.25V
1.8V TAP AC Output Load Equivalent
2.5V TAP AC Output Load Equivalent
1.25V
0.9V
50Ω
50Ω
TDO
TDO
Z O= 50Ω
Z O= 50Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 2.375 to 2.625 unless otherwise noted)[12]
Parameter
Description
Test Conditions
Min.
Max.
Unit
VOH1
Output HIGH Voltage
IOH = –1.0 mA, VDDQ = 2.5V
2.0
V
VOH2
Output HIGH Voltage
IOH = –100 µA
VDDQ = 2.5V
2.1
V
VDDQ = 1.8V
1.6
V
VOL1
Output LOW Voltage
IOL = 1.0 mA
VDDQ = 2.5V
0.4
V
VOL2
Output LOW Voltage
IOL = 100 µA
VDDQ = 2.5V
0.2
V
0.2
V
VIH
Input HIGH Voltage
VDDQ = 2.5V
1.7
VDD + 0.3
V
VDDQ = 1.8V
1.26
VDD + 0.3
V
VIL
Input LOW Voltage
VDDQ = 2.5V
–0.3
0.7
V
VDDQ = 1.8V
–0.3
0.36
V
IX
Input Load Current
–5
5
µA
VDDQ = 1.8V
GND < VIN < VDDQ
Identification Register Definitions
Instruction Field
Revision Number (31:29)
Device Depth (28:24)
Architecture/Memory Type(23:18)
Bus Width/Density(17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
CY7C1471V25
(2MX36)
CY7C1473V25
(4MX18)
CY7C1475V25
(1MX72)
000
000
000
Description
Describes the version number
01011
01011
01011
001001
001001
001001
Defines memory type and architecture
Defines width and density
100100
010100
110100
00000110100
00000110100
00000110100
1
1
1
Reserved for internal use
Allows unique identification of SRAM
vendor
Indicates the presence of an ID
register
Note
12. All voltages refer to VSS (GND).
Document #: 38-05287 Rev. *I
Page 17 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Scan Register Sizes
Register Name
Instruction
Bit Size (x36)
Bit Size (x18)
Bit Size (x72)
3
3
3
Bypass
1
1
1
ID
32
32
32
Boundary Scan Order – 165FBGA
71
52
-
-
-
110
Boundary Scan Order – 209BGA
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures IO ring contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1
compliant.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operations.
SAMPLE Z
010
Captures IO ring contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures IO ring contents. Places the boundary scan register between TDI and
TDO. Does not affect SRAM operation. This instruction does not implement 1149.1
preload function and is therefore not 1149.1 compliant.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect
SRAM operation.
Document #: 38-05287 Rev. *I
Page 18 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Boundary Scan Exit Order (2M x 36)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
C1
21
R3
41
J11
61
B7
2
D1
22
P2
42
K10
62
B6
3
E1
23
R4
43
J10
63
A6
4
D2
24
P6
44
H11
64
B5
5
E2
25
R6
45
G11
65
A5
6
F1
26
R8
46
F11
66
A4
7
G1
27
P3
47
E11
67
B4
8
F2
28
P4
48
D10
68
B3
9
G2
29
P8
49
D11
69
A3
10
J1
30
P9
50
C11
70
A2
11
K1
31
P10
51
G10
71
B2
12
L1
32
R9
52
F10
13
J2
33
R10
53
E10
14
M1
34
R11
54
A9
15
N1
35
N11
55
B9
16
K2
36
M11
56
A10
17
L2
37
L11
57
B10
18
M2
38
M10
58
A8
19
R1
39
L10
59
B8
20
R2
40
K11
60
A7
Boundary Scan Exit Order (4M x 18)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
D2
14
R4
27
L10
40
B10
2
E2
15
P6
28
K10
41
A8
3
F2
16
R6
29
J10
42
B8
4
G2
17
R8
30
H11
43
A7
5
J1
18
P3
31
G11
44
B7
6
K1
19
P4
32
F11
45
B6
7
L1
20
P8
33
E11
46
A6
8
M1
21
P9
34
D11
47
B5
9
N1
22
P10
35
C11
48
A4
10
R1
23
R9
36
A11
49
B3
11
R2
24
R10
37
A9
50
A3
12
R3
25
R11
38
B9
51
A2
13
P2
26
M10
39
A10
52
B2
Document #: 38-05287 Rev. *I
Page 19 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Boundary Scan Exit Order (1M x 72)
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
1
A1
29
T1
57
U10
85
B11
2
A2
30
T2
58
T11
86
B10
3
B1
31
U1
59
T10
87
A11
4
B2
32
U2
60
R11
88
A10
5
C1
33
V1
61
R10
89
A7
6
C2
34
V2
62
P11
90
A5
7
D1
35
W1
63
P10
91
A9
8
D2
36
W2
64
N11
92
U8
9
E1
37
T6
65
N10
93
A6
10
E2
38
V3
66
M11
94
D6
11
F1
39
V4
67
M10
95
K6
12
F2
40
U4
68
L11
96
B6
13
G1
41
W5
69
L10
97
K3
14
G2
42
V6
70
P6
98
A8
15
H1
43
W6
71
J11
99
B4
16
H2
44
V5
72
J10
100
B3
17
J1
45
U5
73
H11
101
C3
18
J2
46
U6
74
H10
102
C4
19
L1
47
W7
75
G11
103
C8
20
L2
48
V7
76
G10
104
C9
21
M1
49
U7
77
F11
105
B9
22
M2
50
V8
78
F10
106
B8
23
N1
51
V9
79
E10
107
A4
24
N2
52
W11
80
E11
108
C6
25
P1
53
W10
81
D11
109
B7
110
A3
26
P2
54
V11
82
D10
27
R2
55
V10
83
C11
28
R1
56
U11
84
C10
Document #: 38-05287 Rev. *I
Page 20 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Maximum Ratings
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch Up Current .................................................... >200 mA
Operating Range
Supply Voltage on VDD Relative to GND........ –0.5V to +3.6V
Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to VDDQ + 0.5V
Ambient
Temperature
Commercial 0°C to +70°C
Industrial
–40°C to +85°C
Range
VDD
VDDQ
2.5V–5%/+5%
1.7V to VDD
Electrical Characteristics
Over the Operating Range [13, 14]
Parameter
Description
VDD
Power Supply Voltage
VDDQ
IO Supply Voltage
Test Conditions
Min
Max
Unit
2.375
2.625
V
For 2.5V IO
2.375
VDD
V
For 1.8V IO
1.7
1.9
V
For 2.5V IO, IOH = –1.0 mA
2.0
For 1.8V IO, IOH = –100 µA
1.6
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
For 2.5V IO, IOL= 1.0 mA
0.2
V
VIH
Input HIGH Voltage[13]
For 2.5V IO
1.7
VDD + 0.3V
V
For 1.8V IO
1.26
VDD + 0.3V
V
VIL
Voltage[13]
IX
Input Leakage Current
except ZZ and MODE
V
For 2.5V IO
–0.3
0.7
V
For 1.8V IO
–0.3
0.36
V
–5
5
µA
GND ≤ VI ≤ VDDQ
µA
–30
Input Current of MODE Input = VSS
Input = VDD
Input Current of ZZ
V
0.4
For 1.8V IO, IOL= 100 µA,
Input LOW
V
5
Input = VDD
µA
µA
–5
Input = VSS
30
µA
IOZ
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
IDD
VDD Operating Supply
Current
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
6.5 ns cycle, 133 MHz
8.5 ns cycle, 100 MHz
275
mA
ISB1
Automatic CE
Power Down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX, inputs switching
6.5 ns cycle, 133 MHz
170
mA
8.5 ns cycle, 100 MHz
170
mA
All speeds
120
mA
–5
5
µA
305
mA
ISB2
Automatic CE
VDD = Max, Device Deselected,
Power Down
VIN ≤ 0.3V or VIN > VDD – 0.3V,
Current—CMOS Inputs f = 0, inputs static
ISB3
Automatic CE
VDD = Max, Device Deselected, or 6.5 ns cycle, 133 MHz
Power Down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
8.5 ns cycle, 100 MHz
Current—CMOS Inputs f = fMAX, inputs switching
170
mA
170
mA
Automatic CE
Power Down
Current—TTL Inputs
135
mA
ISB4
VDD = Max, Device Deselected,
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
All Speeds
Notes
13. Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2). Undershoot: VIL(AC) > –2V (pulse width less than tCYC/2).
14. TPower-up: assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05287 Rev. *I
Page 21 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
100 TQFP
Max.
Test Conditions
CADDRESS
Address Input Capacitance
CDATA
Data Input Capacitance
CCTRL
Control Input Capacitance
CCLK
Clock Input Capacitance
CIO
Input-Output Capacitance
TA = 25°C, f = 1 MHz,
VDD = 2.5V
VDDQ = 2.5V
165 FBGA 209 FBGA
Max.
Max.
Unit
6
6
6
pF
5
5
5
pF
8
8
8
pF
6
6
6
pF
5
5
5
pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Test Conditions
100 TQFP
Package
165 FBGA
Package
209 FBGA
Package
Unit
Test conditions follow
standard test methods
and procedures for
measuring thermal
impedance, according to
EIA/JESD51.
24.63
16.3
15.2
°C/W
2.28
2.1
1.7
°C/W
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
AC Test Loads and Waveforms
2.5V IO Test Load
R = 1667Ω
2.5V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
GND
5 pF
R = 1538Ω
VL = 1.25V
INCLUDING
JIG AND
SCOPE
(a)
1.8V IO Test Load
OUTPUT
RL = 50Ω
Z0 = 50Ω
Document #: 38-05287 Rev. *I
INCLUDING
JIG AND
SCOPE
≤ 1 ns
≤ 1 ns
(c)
ALL INPUT PULSES
VDDQ – 0.2
0.2
5 pF
R = 14 KΩ
(b)
90%
10%
90%
(b)
VL = 0.9V
(a)
10%
R = 14 KΩ
1.8V
OUTPUT
ALL INPUT PULSES
VDDQ
10%
90%
10%
90%
≤ 1 ns
≤ 1 ns
(c)
Page 22 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Switching Characteristics
Over the Operating Range. Timing reference level is 1.25V when VDDQ = 2.5V and is 0.9V when VDDQ = 1.8V. Test conditions
shown in (a) of “AC Test Loads and Waveforms” on page 22 unless otherwise noted.
Parameter
Description
tPOWER
133 MHz
Min
Max
100 MHz
Min
Max
Unit
1
1
ms
Clock
tCYC
Clock Cycle Time
7.5
10
ns
tCH
Clock HIGH
2.5
3.0
ns
tCL
Clock LOW
2.5
3.0
ns
Output Times
tCDV
Data Output Valid After CLK Rise
tDOH
Data Output Hold After CLK Rise
[16, 17, 18]
tCLZ
Clock to Low-Z
tCHZ
Clock to High-Z [16, 17, 18]
tOEV
OE LOW to Output Valid
tOELZ
tOEHZ
OE LOW to Output Low-Z
6.5
2.5
2.5
3.0
[16, 17, 18]
OE HIGH to Output High-Z
ns
ns
3.0
ns
3.8
4.5
ns
3.0
3.8
ns
0
[16, 17, 18]
8.5
0
3.0
ns
4.0
ns
Setup Times
tAS
Address Setup Before CLK Rise
1.5
1.5
ns
tALS
ADV/LD Setup Before CLK Rise
1.5
1.5
ns
tWES
WE, BWX Setup Before CLK Rise
1.5
1.5
ns
tCENS
CEN Setup Before CLK Rise
1.5
1.5
ns
tDS
Data Input Setup Before CLK Rise
1.5
1.5
ns
tCES
Chip Enable Setup Before CLK Rise
1.5
1.5
ns
tAH
Address Hold After CLK Rise
0.5
0.5
ns
tALH
ADV/LD Hold After CLK Rise
0.5
0.5
ns
tWEH
WE, BWX Hold After CLK Rise
0.5
0.5
ns
Hold Times
tCENH
CEN Hold After CLK Rise
0.5
0.5
ns
tDH
Data Input Hold After CLK Rise
0.5
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.5
0.5
ns
Notes
15. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a read or write operation
can be initiated.
16. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of “AC Test Loads and Waveforms” on page 22. Transition is measured ±200 mV
from steady-state voltage.
17. At any supplied voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z before Low-Z under the same system conditions.
18. This parameter is sampled and not 100% tested.
Document #: 38-05287 Rev. *I
Page 23 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Switching Waveforms
Figure 1 shows read-write timing waveform.[19, 20, 21]
Figure 1. Read/Write Timing
1
2
3
t CYC
4
5
6
7
8
9
A5
A6
A7
10
CLK
t CENS
t CENH
t CES
t CEH
t CH
t CL
CEN
CE
ADV/LD
WE
BW X
A1
ADDRESS
t AS
A2
A4
A3
t CDV
t AH
t DOH
t CLZ
DQ
D(A1)
t DS
D(A2)
Q(A3)
D(A2+1)
t OEV
Q(A4+1)
Q(A4)
t OELZ
W RITE
D(A1)
W RITE
D(A2)
D(A5)
Q(A6)
D(A7)
W RITE
D(A7)
DESELECT
t OEHZ
t DH
OE
COM M AND
t CHZ
BURST
W RITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
DON’T CARE
BURST
READ
Q(A4+1)
t DOH
W RITE
D(A5)
READ
Q(A6)
UNDEFINED
Notes
19. For this waveform ZZ is tied LOW.
20. When CE is LOW, CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH, CE1 is HIGH, CE2 is LOW or CE3 is HIGH.
21. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.
Document #: 38-05287 Rev. *I
Page 24 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Switching Waveforms (continued)
[19, 20, 22]
Figure 2 shows NOP, STALL and DESELECT Cycles waveform.
Figure 2. NOP, STALL and DESELECT Cycles
1
2
A1
A2
3
4
5
A3
A4
6
7
8
9
10
CLK
CEN
CE
ADV/LD
WE
BW [A:D]
ADDRESS
A5
t CHZ
D(A1)
DQ
Q(A2)
Q(A3)
D(A4)
Q(A5)
t DOH
COMMAND
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
WRITE
D(A4)
DON’T CARE
STALL
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
UNDEFINED
Note
22. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrates CEN being used to create a pause. A write is not performed during this cycle.
Document #: 38-05287 Rev. *I
Page 25 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Switching Waveforms (continued)
Figure 3 shows ZZ Mode timing waveform.
[23, 24]
Figure 3. ZZ Mode Timing
CLK
t
ZZ
I
t ZZREC
ZZ
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes
23. Device must be deselected when entering ZZ mode. See “Truth Table” on page 11 for all possible signal conditions to deselect the device.
24. DQs are in high-Z when exiting ZZ sleep mode.
Document #: 38-05287 Rev. *I
Page 26 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
Package
Operating
Part and Package Type
(MHz)
Ordering Code
Diagram
Range
133
CY7C1471V25-133AXC
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Commercial
CY7C1473V25-133AXC
CY7C1471V25-133BZC
51-85165 165-Ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1473V25-133BZC
CY7C1471V25-133BZXC
51-85165 165-Ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1473V25-133BZXC
CY7C1475V25-133BGC
CY7C1475V25-133BGXC
CY7C1471V25-133AXI
51-85167 209-Ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-Ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
lndustrial
CY7C1473V25-133AXI
CY7C1471V25-133BZI
51-85165 165-Ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1473V25-133BZI
CY7C1471V25-133BZXI
51-85165 165-Ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1473V25-133BZXI
CY7C1475V25-133BGI
CY7C1475V25-133BGXI
100
CY7C1471V25-100AXC
51-85167 209-Ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-Ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
Commercial
CY7C1473V25-100AXC
CY7C1471V25-100BZC
51-85165 165-Ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1473V25-100BZC
CY7C1471V25-100BZXC
51-85165 165-Ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1473V25-100BZXC
CY7C1475V25-100BGC
CY7C1475V25-100BGXC
CY7C1471V25-100AXI
51-85167 209-Ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-Ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-Free
lndustrial
CY7C1473V25-100AXI
CY7C1471V25-100BZI
51-85165 165-Ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1473V25-100BZI
CY7C1471V25-100BZXI
51-85165 165-Ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-Free
CY7C1473V25-100BZXI
CY7C1475V25-100BGI
CY7C1475V25-100BGXI
Document #: 38-05287 Rev. *I
51-85167 209-Ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-Ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-Free
Page 27 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Package Diagrams
Figure 4. 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm), 51-85050
16.00±0.20
1.40±0.05
14.00±0.10
100
81
80
1
20.00±0.10
22.00±0.20
0.30±0.08
0.65
TYP.
30
12°±1°
(8X)
SEE DETAIL
A
51
31
50
0.20 MAX.
R 0.08 MIN.
0.20 MAX.
0.10
1.60 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
0.25
NOTE:
1. JEDEC STD REF MS-026
GAUGE PLANE
0°-7°
R 0.08 MIN.
0.20 MAX.
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0.60±0.15
0.20 MIN.
1.00 REF.
DETAIL
Document #: 38-05287 Rev. *I
A
51-85050-*B
Page 28 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Package Diagrams (continued)
Figure 5. 165-Ball FBGA (15 x 17 x 1.4 mm), 51-85165
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
Ø0.05 M C
PIN 1 CORNER
Ø0.25 M C A B
Ø0.45±0.05(165X)
1
2
3
4
5
6
7
8
9
10
11
11
10
9
8
7
6
5
4
3
2
1
A
B
B
C
C
1.00
A
D
D
F
F
G
G
H
J
14.00
E
17.00±0.10
E
H
J
K
L
L
7.00
K
M
M
N
N
P
P
R
R
A
1.00
5.00
0.35
0.15 C
+0.05
-0.10
0.53±0.05
0.25 C
10.00
B
15.00±0.10
0.15(4X)
SEATING PLANE
Document #: 38-05287 Rev. *I
1.40 MAX.
0.36
C
51-85165-*A
Page 29 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Package Diagrams (continued)
Figure 6. 209-Ball FBGA (14 x 22 x 1.76 mm), 51-85167
51-85167-**
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device
Technology, Inc. All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05287 Rev. *I
Page 30 of 32
© Cypress Semiconductor Corporation, 2002-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the
use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to
be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document History Page
Document Title: CY7C1471V25/CY7C1473V25/CY7C1475V25, 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
with NoBL™ Architecture
Document Number: 38-05287
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
114674
08/06/02
PKS
New Data Sheet
*A
121522
01/27/03
CJM
Updated features for package offering
Updated ordering information
Changed Advanced Information to Preliminary
*B
223721
See ECN
NJY
Changed timing diagrams
Changed logic block diagrams
Modified Functional Description
Modified “Functional Overview” section
Added boundary scan order for all packages
Included thermal numbers and capacitance values for all packages
Removed 150MHz speed grade offering
Included ISB and IDD values
Changed package outline for 165FBGA package and 209-Ball BGA package
Removed 119-BGA package offering
*C
235012
See ECN
RYQ
Minor Change: The data sheets do not match on the spec system and
external web
*D
243572
See ECN
NJY
Changed ball H2 from VDD to NC in the 165-Ball FBGA package in page 6
Changed ball R11 in 209-Ball BGA package from DQPa to DQPe in page 7
Modified Capacitance values on page 21
*E
299511
See ECN
SYT
Removed 117-MHz Speed Bin
Changed ΘJA from 16.8 to 24.63 °C/W and ΘJC from 3.3 to 2.28 °C/W for 100
TQFP Package on Page # 22
Added Pb-free information for 100-Pin TQFP, 165 FBGA and 209 BGA
Packages
Added comment of ‘Pb-free BG packages availability’ below the Ordering
Information
*F
323039
See ECN
PCI
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Added Address Expansion pins in the Pin Definitions Table
Modified VOL, VOH Test Conditions
Changed package name from 209-Ball PBGA to 209-Ball FBGA on page# 7
Added Industrial temperature range
Added Pb-free information in the ordering information table
Removed comment of ‘Pb-free BG packages availability’ below the Ordering
Information
Updated Ordering Information Table
*G
416221
See ECN
NXR
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed the description of IX from Input Load Current to Input Leakage
Current on page# 20
Changed the IX current values of MODE on page # 20 from –5 µA and 30 µA
to –30 µA and 5 µA
Changed the IX current values of ZZ on page # 20 from –30 µA and 5 µA
to –5 µA and 30 µA
Changed VIH < VDD to VIH < VDD on page # 20
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information table
Document #: 38-05287 Rev. *I
Page 31 of 32
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document Title: CY7C1471V25/CY7C1473V25/CY7C1475V25, 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
with NoBL™ Architecture
Document Number: 38-05287
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
*H
472335
See ECN
VKN
Corrected the typo in the pin configuration for 209-Ball FBGA pinout
(Corrected the ball name for H9 to VSS from VSSQ).
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND.
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC
Switching Characteristics table.
Updated the Ordering Information table.
*I
1274732
See ECN
VKN/AESA
Document #: 38-05287 Rev. *I
Corrected typo in the “NOP, STALL and DESELECT Cycles” waveform
Page 32 of 32