VISHAY DG221B

DG221B
New Product
Vishay Siliconix
Quad SPST CMOS Analog Switch with Latches
FEATURES
D
D
D
D
BENEFITS
APPLICATIONS
Accepts 150-ns Write Pulse Width
D Compatible with Most mP Buses
5-V On-Chip Regulator
D Allows Wide Power Supply Tolerance
Without Affecting TTL Compatibility
Latches Are Transparent with WR Low
D Reduced Power Consumption
Low On-Resistance: 60 W
D Allows Flexibility of Design
D
D
D
D
D
D
mP Based Systems
Automatic Test Equipment
Communication Systems
Data Acquisition Systems
Medical Instrumentation
Factory Automation
DESCRIPTION
The DG221B is a monolithic quad single-pole, single-throw
analog switch designed for precision switching applications in
communication, instrumentation and process control systems.
Featuring independent onboard latches and a common WR
pin, each DG221B can be memory mapped, and addressed as
a single data byte for simultaneous switching.
The DG221B combines low power and low on-resistance (60
W typical) while handling continuous currents up to 20 mA. An
epitaxial layer prevents latchup.
The device features true bidirectional performance in the on
condition.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Four Latchable SPST Switches per Package
Dual-In-Line and SOIC
TRUTH TABLE
IN1
1
16
IN2
D1
2
15
D2
3
14
S2
V–
4
13
V+
GND
5
12
WR
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Input Latch
S1
INX
WR
0
0
ON
1
0
OFF
Control data latched-in,
switches on or off as selected
by last INX
X
X
1
Document Number: 71616
S-03627—Rev. A, 23-Apr-01
Maintains previous state
Logic “0” v 0.8 V
Logic “1” w 2.4 V
ORDERING INFORMATION
Temp Range
Top View
Switch
–40_C
_ to 85_C
_
Package
Part Number
16-Pin Plastic DIP
DG221BDJ
16-Pin Narrow SOIC
DG221BDY
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1
DG221B
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 V
(DJ and DY Suffix) . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 25_C
d. Derate 7.7 mW/_C above 75_C
or 20 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . 70 mA
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5V
Reg
S
GND
INX
V–
–
+
Latch
V–
V+
WR
Level
Shift/
Drive
V+
–
+
D
V–
FIGURE 1.
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2
Document Number: 71616
S-03627—Rev. A, 23-Apr-01
DG221B
New Product
Vishay Siliconix
SPECIFICATIONSa
Limits
Test Conditions
Unless Otherwise Specified
Parameter
–40 to 85_C
V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8f V, WR = 0
Tempb
Mind
VANALOG
Full
–15
rDS(on)
IS = –10 mA, VD = "10 V
Room
Full
Symbol
Typc
Maxd
Unit
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Source Off
Leakage Current
IS(off)
Drain Off
Leakage Current
ID(off)
Drain On
Leakage Current
ID(on)
IINL , IINH
15
V
60
90
135
W
Room
Full
–5
–100
"0.01
5
100
Room
Full
–5
–100
"0.02
5
100
VS = VD = "14 V
Room
Full
–5
–200
"0.01
5
200
VIN = 0 V or = 2.4 V
Room
Full
–1
–10
–0.0004
1
10
VS = "14
" V, VD = #14
# V
nA
Digital Control
Input Current
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Turn-On Time Write
Turn-Off Time Write
tON
tOFF
tON, WR
tOFF, WR
Write Pulse Width
tW
Input Setup Time
tS
Input Hold Time
tH
Charge Injection
See Figure 2
Q
Source-Off Capacitance
CS(off)
Drain-Off Capacitance
CD(off)
Channel-On Capacitance
CD(on)
Off Isolation
OIRR
Interchannel Crosstalk
XTALK
See Figure 3
See Figure 4
CL = 1000 pF
VGEN = 0 V, RGEN = 0 W
f = 1 MHz, VS, VD = 0 V
VS = 1 Vp-p, f = 100 kHz
CL = 15 pF, RL = 1 kW
Room
550
Room
340
Room
550
Room
340
Room
150
120
Room
180
130
Room
20
18
Room
20
Room
8
Room
9
Room
29
Room
70
Room
90
ns
pC
pF
dB
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I–
All Channels On or Off
VIN = 0 V or 2.4 V
Full
Room
0.8
–1
–0.4
1.5
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
Document Number: 71616
S-03627—Rev. A, 23-Apr-01
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3
DG221B
New Product
Vishay Siliconix
TEST CIRCUITS
+15 V
V+
2V
S
Logic
Input
D
VO
IN
GND
WR
V–
Switch
Input
CL
35 pF
RL
1 kW
3V
50%
tr < 10 ns
tf < 10 ns
0V
VS
90%
Switch
Output
VO
tOFF
tON
–15 V
CL (includes fixture and stray capacitance)
RL
VO = VS
RL + rDS(on)
FIGURE 2.
Switching Time
+15 V
3V
0V
WR
2V
WR
S
50%
0V
V+
D
IN
VO
3V
tr < 10 ns
tf < 10 ns
0V
IN
GND
V–
RL
1 kW
CL
35 pF
VS
VOUT
90%
VO
–15 V
tOFF , WR
tON, WR
CL (includes fixture and stray capacitance)
VO = VS
RL
RL + rDS(on)
FIGURE 3.
WR Switching Time
3V
50%
IN
tS
tH
tS
tH
3V
50%
WR
tW
tH = Hold Time
tS = Setup Time
tW = WR Pulse Width
VOUT
The latches are level sensitive. When WR is held low the latches are transparent and the switches respond to the digital inputs. The digital inputs are latched on the rising edge of WR.
FIGURE 4.
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WR Setup Conditions
Document Number: 71616
S-03627—Rev. A, 23-Apr-01
DG221B
New Product
Vishay Siliconix
TEST CIRCUITS
+15 V
DVO
V+
Rg
S
Vg
VO
D
VO
CL
1000 pF
IN
3V
WR
OFF
INX
V–
ON
OFF
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
–15 V
FIGURE 5. Charge Injection
+15 V
+15 V
C
C
V+
S
VS
S1
VS
V+
VO
D
Rg = 50 W
Rg = 50 W
NC
GND
WR
V–
50 W
IN1
0V
RL
IN
2.4 V
D1
C
0V
S2
D2
VO
RL
IN2
GND
WR
V–
C
–15 V
Off Isolation = 20 log
–15 V
VS
VO
C = RF bypass
XTALK Isolation = 20 log
VS
VO
C = RF bypass
FIGURE 7. Channel-to-Channel Crosstalk
FIGURE 6. Off Isolation
APPLICATION HINTSa
V+
Positive Supply
Voltage
(V)
V–
Negative Supply
Voltage
(V)
GND
(V)
WR
(V)
VIN
Logic Input
Voltage
VINH(min)/VINL(max)
(V)
VS or VD
Analog Voltage
Range
(V)
15
–15
0
2.4/0.8
2.4/0.8
–15 to 15
10
–10
0
2.4/0.8
2.4/0.8
–10 to 10
10
–5
0
2.4/0.8
2.4/0.8
–5 to 10
Notes:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
Document Number: 71616
S-03627—Rev. A, 23-Apr-01
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DG221B
New Product
Vishay Siliconix
APPLICATIONS
VIN
+15 V
V+
9 MW
S1
DG221B
IN1
D
900 kW
Q
C
D1
S2
IN2
D
90 kW
Q
C
D2
Data Bus
S3
IN3
D
9 kW
Q
C
D3
S4
IN4
D
1 kW
Q
C
WR
D4
WR
V–
GND
CS
Address
Decoder
Address Bus
+
TL081
–
–15 V
The TL081 is used as an output buffer while
the voltage divider provides attenuation.
VO
FIGURE 8. mP-Controlled Analog Signal Attenuator
TRUTH TABLE
OUTPUT ATTENUATION FOR FIGURE 8
IN1
IN2
IN3
IN4
WRA
ON SWITCH
WR
IN1
IN2
IN3
IN4
0
0
0
0
0
All
0
0
1
1
1
0.1
1
1
1
1
0
None
0
1
0
1
1
0.01
0
1
1
1
0
1
0
1
1
0
1
0.001
1
0
1
1
0
2
0
1
1
1
0
0.0001
1
1
0
1
0
3
1
1
1
0
0
4
Gain
Notes:
a. WR may be held at “0” for temporary operation similar to DG201A/DG201B. With WR at “0” SW1 will remain on as long as IN1 is held at “0”.
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Document Number: 71616
S-03627—Rev. A, 23-Apr-01