EIA1414-6 14.00-14.50 GHz 6-Watt Internally Matched Power FET UPDATED 12/5/2005 FEATURES • • • • • • .060 MIN. 14.00– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package .650±.008 .512 Excelics .060 MIN. EIA1414-6 .319 DRAIN GATE .022 YM SN .045 .094 .382 .004 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) P1dB G1dB ∆G PAE MIN TYP 36.5 37.5 dBm 7.0 8.0 dB Output Power at 1dB Compression f = 14.00-14.50GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 14.00-14.50GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f = 14.00-14.50GHz VDS = 8 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 14.00-14.50GHz VDS = 8 V, IDSQ ≈ 1600mA Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 SYMBOL MAX UNITS ±0.6 dB 33 f = 14.00-14.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 28mA 3 Thermal Resistance 2) S.C.L. = Single Carrier Level. % 1800 2100 mA 2800 3500 mA -1.0 -2.5 4.5 Note: 1) Tested with 100 Ohm gate resistor. .070 ±.008 5.0 V o C/W 3) Overall Rth depends on case mounting. 1,2 ABSOLUTE MAXIMUM RATING SYMBOLS Vds Vgs Ids Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage ABSOLUTE1 CONTINUOUS2 12 8V Gate-Source Voltage -5 -3V Drain Current IDSS 3.5A Forward Gate Current 43.2mA 14.4mA Reserve Gate Current -7.2mA -2.4mA Input Power 36.5dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 30W 30W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2005