LED - Lamp ELD-950-555 15.11.2007 rev. 04 Radiation Type Technology Case Infrared DH AlGaAs/GaAs 5 mm plastic lens Description High-power, high-speed infrared LED in standard 5 mm package, wide beam angle, housing without standoff leads 9 - 0,5 6 - 0,3 1,1 - 0,1 2,54 5,3 - 0,3 0,8 - 0,4 Anode 2 - 1,0 0,6 - 0,2 32,5 Note: Special packages with standoff available on request Applications Optical communications, safety equipment, automation, optical sensors Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit IF 100 mA IFM 200 mA PD 150 mW Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg -40 to +100 °C Junction temperature TJ 100 °C TSd 260 °C Typ Max Unit Forward current (DC) (tP ≤ 50 µs, tP /T = 1/2) Peak forward current Power dissipation t ≤ 5 s, 3 mm from case Soldering temperature Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 20 mA VF 1,17 Forward voltage* IF = 100 mA VF 1,3 Reverse voltage IR = 100 µA VF 5 Radiant power IF = 20 mA Φe 3,8 5,5 mW Radiant power* IF = 100 mA Φe 20 26 mW Radiant intensity IF = 20 mA Ιe 7,5 10 mW/sr Radiant intensity* IF = 100 mA Ιe 30 45 mW/sr Peak wavelength IF = 50 mA λp 930 950 Spectral bandwidth at 50% IF = 50 mA ∆λ0.5 65 nm Viewing angle IF = 50 mA ϕ 45 deg. Switching time IF = 50 mA tr, tf 35 ns V 1,5 V V 950 nm *measured after 30s current flow Note: All measurements carried out on EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545