EMD22 / UMD22N Transistors General purpose (dual digital transistors) EMD22 / UMD22N zExternal dimensions (Unit : mm) 0.22 (5) (6) (2) 1.6 (3) (4) 0.5 0.5 1.0 EMD22 (1) 1.2 1.6 0.5 0.13 zFeatures 1) Both the DTA143Z chip and DTC143Z chip in an EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT6 2.0 1.3 (3) (2) (1) 0.65 (5) (6) 0.2 (4) UMD22N 0.65 Abbreviated symbol : D22 zStructure A PNP and NPN digital transistor (each with a single built in resistor) 1.25 0to0.1 0.1Min. 0.9 0.7 0.15 2.1 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : D22 zEquivalent circuit zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol DTr 1 Unit VCC VIN IO 50 −5 to +30 100 100 150 150 −55 to +150 V V IC (MAX) Pd Tj Tstg ∗120mW per element must not be exceeded EMD22 / UMD22N (3) mA Supply voltage Input voltage Output current mW ∗ °C °C DTr1 DTr2 R2 Power dissipation Junction temperature Storage temperature Symbol DTr 2 Unit VCC VIN IO −50 −30 to +5 −100 −100 150 150 −55 to +150 V V IC (MAX) Pd Tj Tstg ∗120mW per element must not be exceeded (1) R2 R1=4.7kΩ R2=47kΩ Parameter (2) R1 (4) R1 (5) (6) mA mW ∗ °C °C Rev.A 1/3 EMD22 / UMD22N Transistors zElectrical characteristics (Ta=25°C) DTr 1 Parameter Symbol Min. Typ. Max. Unit Input voltage Output voltage Input current Output current DC current gain − − 0.5 VI (on) 1.3 − − VO (on) − 0.1 0.3 V II − − 1.8 mA IO (off) − − 0.5 µA VCC=50V, VI=0V GI 80 − − − VO=5V, IO=10mA V VCC=5V, IO=100µA VO=0.3V, IO=5mA IO/II=5mA/0.25mA VI=5V 3.29 4.7 6.11 kΩ − − − Input resistance R1 Resistance ratio R2/R1 8 10 12 fT − 250 − Transition frequency Conditions VI (off) MHz VCE=10V, IE=−5mA, f=100MHz ∗Transition frequency of the device ∗ DTr 2 Parameter Symbol Min. Typ. Max. Unit Input voltage Output voltage Input current Output current DC current gain VI (off) − − −0.5 VI (on) −1.3 − − VO (on) − II − − −1.8 mA IO (off) − − −0.5 µA GI 80 − −0.1 −0.3 − V − VO=−0.3V, IO=−5mA IO/II=−5mA/−0.25mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−10mA 3.29 4.7 6.11 kΩ − − − Input resistance R1 Resistance ratio R2/R1 8 10 12 fT − 250 − Transition frequency V Conditions VCC=−5V, IO=−100µA ∗Transition frequency of the device MHz VCE=−10V, IE=5mA, f=100MHz ∗ zPackaging specifications Type Package Code Taping T2R TR Basic ordering unit (pieces) 8000 3000 EMD22 UMD22N Rev.A 2/3 EMD22 / UMD22N Transistors zElectrical characteristic curves DTr 1 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 500µ 1m 2m 5m 10m 20m 500µ 200µ Ta=100°C 25°C −40°C 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 50m 100m VO=5V 500 2m 1m 200m 100m 100µ 200µ 1k VCC=5V DC CURRENT GAIN : GI 100 Ta=100°C 25°C −40°C 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 1 100µ 200µ 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current DTr 2 −100 lO/lI=20 INPUT VOLTAGE : VI(on) (V) OUTPUT VOLTAGE : VO(on) (V) Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 1m 100µ 200µ 500µ 1m 2m −1 −500m 5m 10m 20m 50m 100m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m −2m −1m −500µ Ta=100°C 25°C −40°C −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.4 Output voltage vs. output current Fig.5 Input voltage vs. output current (ON characteristics) Fig.6 Output current vs. input voltage (OFF characteristics) −1 VO=−5V Ta=100°C 25°C −40°C 100 50 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −500m OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI −2 Ta=−40°C 25°C 100°C VCC=−5V OUTPUT CURRENT : IO (A) 1k 200 −10 −200m 2m 500 −20 −5 −10m −5m VO=−0.3V −50 500m OUTPUT CURRENT : Io (A) 1 −5m −10m −20m −50m −100m −200m lO/lI=20 Ta=100°C 25°C −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A) Fig.7 DC current gain vs. output current Fig.8 Output voltage vs. output current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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