FDMC2523P P-Channel QFET® tm -150V, -3A, 1.5Ω Features General Description Max rDS(on) = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Low Crss ( typical 10pF) Fast Switching Low gate charge ( typical 6.2 nC ) Improved dv / dt capability RoHS Compliant Application Active Clamp Switch Bottom 5 6 7 Top 8 D 4 3 2 D D D 1 S S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID -Continuous Ratings -150 Units V ±30 V TC = 25°C -3 TC = 100°C -1.8 -Pulsed A -12 PD Power Dissipation (Steady State) TJ, TSTG Operating and Storage Junction Temperature Range TC = 25°C TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds dv/dt Peak Diode Recovery dv/dt 42 W -55 to +150 °C 300 °C -5 V/ns (Note 2) Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Note 1) 3.0 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking FDMC2523P Device FDMC2523P ©2006 Fairchild Semiconductor Corporation FDMC2523P Rev.C Package Power 33 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC2523P P-Channel QFET® January 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient -150 ID = -250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V mV/°C -138 VDS = -150V, VGS = 0V -1 TJ = 125°C -10 VGS = ±30V, VDS = 0V μA ±100 nA -5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient -3 ID = -250μA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance -3.8 6 mV/°C VGS = -10V, ID = -1.5A 1.1 1.5 VGS = -10V, ID = -1.5A , TJ = 125°C 2.0 3.6 VDS = -40V, ID = -1.5A 1.4 (Note 4) Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -25V, VGS = 0V, f = 1MHz f = 1MHz 200 270 pF 60 80 pF 10 15 pF Ω 7.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = -75V, ID = -3A VGS = -10V, RGEN = 25Ω (Note 3,4) VGS = -10V VDD = -75V ID = -3A (Note 3,4) 15 27 ns 11 20 ns 19 35 ns 13 24 ns 6.2 9 nC 1.4 nC 3.3 nC Drain-Source Diode Characteristics IS Maximum continuous Drain - Source Diode Forward Current -3 A ISM Maximum Pulse Drain - Source Doide Forward Current -12 A VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -3.0A trr Reverse Recovery Time IF = -3.0A, di/dt = 100A/μs Qrr Reverse Recovery Charge -1.8 (Note 3) -5 V 93 ns 0.27 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper b.135°C/W when mounted on a minimum pad of 2 oz copper 2: ISD < -3A, dI/dt < 300A/us, VDD < BVDSS, Starting TJ = 25°C 3: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 4: Essentially independent of operating temperature. FDMC2523P Rev.C 2 www.fairchildsemi.com FDMC2523P P-Channel QFET® Electrical Characteristics TJ = 25°C unless otherwise noted FDMC2523P P-Channel QFET® Typical Characteristics TJ = 25°C unless otherwise noted 1.6 - ID, DRAIN CURRENT (A) VGS = -10V 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = -8V 2.0 VGS = -7V VGS = -9V 1.5 1.0 VGS = -6V 0.5 0.0 0 2 4 6 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = -8V VGS = -9V 1.0 VGS = -10V 0.8 0.0 10 0.5 1.0 1.5 2.0 2.5 3.0 -ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.1 4.0 ID = -3A VGS = -10V 1.8 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (Ω) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -7V 1.2 Figure 1. On-Region Characteristics 1.5 1.2 0.9 0.6 0.3 -50 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 3.5 ID = -0.75A 3.0 2.5 TJ = 125oC 2.0 1.5 TJ = 25oC 1.0 -25 0 25 50 75 100 125 150 5 TJ, JUNCTION TEMPERATURE (oC) - IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VDD = -5V 2.0 1.5 TJ = 125oC 1.0 TJ = 25oC 0.5 TJ = -55oC 0.0 2 3 4 5 6 7 -VGS, GATE TO SOURCE VOLTAGE (V) 8 Figure 5. Transfer Characteristics FDMC2523P Rev.C 7 8 9 10 Figure 4. On-Resistance vs Gate to Source Voltage 3.0 2.5 6 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature - ID, DRAIN CURRENT (A) PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = -6V 10 VGS = 0V 1 TJ = 125oC 0.1 0.01 1E-3 1E-4 0.0 TJ = 25oC TJ = -55oC 0.5 1.0 1.5 2.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 2.5 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC2523P P-Channel QFET® 10 1000 ID = -3A VDD = -50V 8 Ciss VDD = -75V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) Typical Characteristics TJ = 25°C unless otherwise noted VDD = -100V 6 4 2 100 Coss 10 Crss f = 1MHz VGS = 0V 0 0 2 4 6 Qg, GATE CHARGE(nC) 1 8 0 Figure 7. Gate Charge Characteristics 50 75 100 125 150 Figure 8. Capacitance vs Drain to Source Voltage 6 40 rDS(on) LIMITED 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 25 -VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 25oC TJ = 125oC 1 100us 1 1ms 10ms 0.1 100ms SINGLE PULSE TJ = MAX RATED 0.01 1s 10s DC o RθJA = 135 C/W TA = 25oC 0.5 -2 10 -1 0 10 1 10 10 1E-3 20 1 10 100 400 VDS, DRAIN to SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE(μs) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 500 TA = 25oC 100 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 I = I25 150 – T A -----------------------125 SINGLE PULSE o 1 0.5 -4 10 RθJA = 135 C/W -3 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 10 1 10 2 10 3 10 Figure 11. Single Pulse Maximum Power Dissipation FDMC2523P Rev.C 4 www.fairchildsemi.com FDMC2523P P-Channel QFET® Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 1E-3 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMC2523P Rev.C 5 www.fairchildsemi.com FDMC2523P P-Channel QFET® FDMC2523P Rev.C 6 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDMC2523P Rev. C 7 www.fairchildsemi.com FDMC2523P P-Channel QFET® TRADEMARKS