PHOTODIODE GaAs PIN photodiode with preamp G10447-51/-54 ROSA type, 850 nm, 10 Gbps Features Applications l 10 gigabit ethernet l φ1.25 mm (-54)/ φ2.5 mm (-51)sleeve type ROSA (Receiver Optical Sub-Assembly) l Optical fiber communications l High-speed response: 10 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output l Sensitivity: +2 to -13.5 dBm Typ. (Extinction ratio=3.0 dB) l Trans-impedance: 6 kΩ Typ. (single-ended) l Large area (φ0.06 mm) for multi-mode optical fibers ■ Absolute m axim um ratings (Ta=25 °C) Parameter Supply voltage Reverse voltage (photodiode) Operating temperature * 1 Storage temperature *1 *1: No condensation Symbol Vcc VR Topr Tstg Value -0.5 Min., +3.7 Max. 7 -20 to +85 -40 to +85 Unit V V °C °C Value -20 to 85 3.05 to 3.53 3.05 to 5.0 830 to 870 50 9 to 10.3 NRZ, Mark ratio=1/2 Unit °C V V nm Ω Gbps - ■ Recom m ended operating conditions Parameter Case temperature * 1 Supply voltage Reverse voltage (photodiode) Spectral response range Load resistance * 2 Bit rate Bit pattern *2: Capacitive coupling Symbol Tc Vcc Vpd λ RL - ■ Electrical and optical characteristics (“■ Recom m ended operating conditions”, unless otherwise noted) Parameter Responsivity Supply current Cut-off frequency Low cut-off frequency Trans-impedance *3 Stressed receivable sensitivity (OMA) Minimum receivable sensitivity (OMA) Maximum receivable sensitivity (Average) Output amplitude Dark current Symbol R Icc fc fc-L Tz SRS Pmin (OMA) Pmax Vomax ID Optical return loss ORL Output resistance Rout *3: Single-ended (Vout+) measurement Condition Dark state, R L =∞ -3 dB -3 dB R L =50 Ω, f=100 MHz PN=31, BER=10 -12 Extinction ratio=3 dB λ=850 nm, VECP=3.5 dB Extinction ratio=3 dB PN=31 BER=10 -12 Extinction ratio=7 dB Differential Tc=25 °C Dark state Vpd=3.3 V Min. 0.4 6.0 4 Typ. 0.55 32 8.0 10 6 Max. 45 12.3 50 - Unit A/W mA GHz kHz kΩ - -12 - dBm - -13.5 -12 +0.5 +2 - 300 12 - 450 0.02 14 60 650 1 100 - dBm mVpp nA dB Ω PRELIMINARY DATA Jan. 2007 1 G10447-51/-54 GaAs PIN photodiode with preamp ■ Frequency response ■ Bit error rate 10 -3 10 -4 10 -5 10 -6 10 -7 10 -8 10 -9 ( Bit rate 10.3 Gbps, PN=31, NRZ, Vcc=Vpd=3.3 V Resposivity 0.55 A/W, λ=850 nm, Extinction ratio 3.0 dB ) (Ta=25 ˚C, Vout+, Pin= -15 dBm) +10 10 RELATIVE SENSITIVITY (dB) BIT ERROR RATE +5 -10 0 -5 -10 -15 -20 -25 -11 10 10-12 -18 -17 -16 -15 -14 -13 -12 -11 -10 -30 -9 0 -8 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) OPTICAL INPUT POWER (dBm in OMA) KGPDB0072EA KGPDB0073EB ■ Dimensional outlines (unit: mm) G10447-51 ( , ) G10447-54 ( 1.25) 2.72 3.38 ± 0.03 4.04 ± 0.03 25˚ ± 1˚ 6.10 ± 0.07 6.36 ± 0.06 1.65 ± 0.02 R0.3 1.5 MAX. 0.3 8.00 ± 0.05 5.38 0.3 0.1 4.17 ± 0.02 3.97 4.64 1.27 ± 0.03 +0.42 (7.28) 1.09 ± 0.02 7.26-0.22 0.3 (OPTICAL REFERENCE PLANE) 5.6 (6 ×) 0.35 (2 ×) 0.825 (5 ×) 0.79 5.6 5.38 (OPTICAL REFERENCE PLANE) 1.5 MAX. 7.4 ± 0.1 1.43 ± 0.06 6.58 ± 0.05 4.69 ± 0.07 5.08 6.25 ± 0.025 5.94 ± 0.05 4.88 2.92 ± 0.05 5.9 +0.12 8.00-0 1.1 Pin No. (6 ×) 0.35 (5 ×) 0.79 13.5 (2 ×) 0.825 2.1 +0.02 6.6-0.1 0.1 1.1 2.1 Vcc Vout+ VoutVpd GND 13.5 PIN No. Tolerance unless otherwise noted: ±0.15 KGPDA0029EA Vcc Vout+ VoutVpd GND Tolerance unless otherwise noted: ±0.15 Note: LC connector with lead pin terminal (-14) is available. KIRDA0192EB KIRDA0192EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KGPD1019E02 Aug. 2007 DN