CORPORATION GD421SD Description ISSUED DATE :2005/05/20 REVISED DATE : S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A The GD421SD is designed for low power rectification. Package Dimensions Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. A A1 A2 D E HE REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Unit Junction Temperature Tj +125 Storage Temperature Tstg -40 ~ +125 Maximum Recurrent Peak Reverse Voltage VRRM 40 V Maximum RMS Voltage VRPS 28 V Maximum DC Blocking Voltage VDC 40 V Peak Forward Surge Current at 8.3mSec single half sine-wave IFSM 1.0 A Typical Junction Capacitance between Terminal CJ 6.0 pF Maximum Average Forward Rectified Current Io 0.1 A Total Power Dissipation PD 225 mW Characteristics at Ta = 25 Parameter Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Symbol Min. Typ. Max. Unit Test Conditions V(BR)R 40 - - V IR=50 A VF(1) - - 340 mV IF=10mA VF(2) - - 550 mV IF=100mA IR - - 30 A VR=10V 1/2 CORPORATION ISSUED DATE :2005/05/20 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2