ISSUED DATE :2005/02/25 REVISED DATE : GS123 NPN EPITAXIAL TRANSISTOR Description The GS123 is designed for general purpose amplifier applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 5 V Collector Current IC 700 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 25 - - V IC=10uA , IE=0 BVCEO 20 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=10uA, IC=0 ICBO - - 1 uA VCB=20V, IE=0 VCE(sat) - - 400 mV IC=500mA, IB=50mA VBE(on) - - 1 V VCE=1V, IC=150mA hFE 150 - 300 fT 150 - - MHz - - 10 pF Cob Test Conditions VCE=1V, IC=150mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f=1MHz 1/2 ISSUED DATE :2005/02/25 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2