GTM GE2761

Pb Free Plating Product
ISSUED DATE :2005/05/18
REVISED DATE :
GE2761
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
600/650V
1.0
10A
Description
The GE2761 series provide the designer with best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications
such as DC/DC converters.
Features
*Low On-resistance
*Simple Drive Requirement
*RoHS Compliant
*Fast Switching Characteristic
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
- /A
Gate-Source Voltage
Symbol
Ratings
Unit
VDS
600/650
V
VGS
30
V
Continuous Drain Current , VGS@10V
ID @TC=25
10
A
Continuous Drain Current , VGS@10V
ID @TC=100
4.4
A
18
A
104
W
Pulsed Drain Current
1
IDM
PD @TC=25
Total Power Dissipation
Linear Derating Factor
Avalanche Current
Operating Junction and Storage Temperature Range
0.8
W/
IAR
10
A
Tj, Tstg
-55 ~ +150
Symbol
Value
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
1.2
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/W
1/4
ISSUED DATE :2005/05/18
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
600
-
-
V
VGS=0, ID=250uA
-
650
-
-
V
VGS=0, ID=250uA
A
-
0.6
-
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V
VDS=VGS, ID=250uA
gfs
-
4.5
-
S
VDS=10V, ID=3.5A
IGSS
-
-
100
nA
VGS=
-
-
10
uA
VDS=600V, VGS=0
-
-
100
uA
VDS=480V, VGS=0
RDS(ON)
-
-
1.0
Total Gate Charge
Qg
-
53
85
Gate-Source Charge
Qgs
-
10
-
Gate-Drain (“Miller”) Change
Qgd
-
15
-
Td(on)
-
16
-
Tr
-
20
-
Td(off)
-
82
-
Tf
-
36
-
Ciss
-
2770
4430
Output Capacitance
Coss
-
320
-
Reverse Transfer Capacitance
Crss
-
8
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.5
V
IS=10A, VGS=0V, Tj=25
Reverse Recovery Time
Trr
-
610
-
ns
Reverse Recovery Charge
Qrr
-
8.64
-
uC
IS=10A, VGS=0V
dI/dt=100A/ s
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
3
3
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
IDSS
V/
Reference to 25 , ID=1mA
30V
VGS=10V, ID=3.5A
nC
ID=10A
VDS=520V
VGS=10V
Ns
VDD=320V
ID=10A
VGS=10V
RG=10
RD=30
pF
VGS=0V
VDS=15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
3
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=1.2mH, RG=25 , IAS=10A.
3. Pulse width 300us, duty cycle 2%.
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ISSUED DATE :2005/05/18
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/05/18
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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