Pb Free Plating Product ISSUED DATE :2004/12/21 REVISED DATE : GJ9960 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40V 16m 42A Description The GJ9960 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features *Simple Drive Requirement *Low Gate Charge *Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS@10V ID @TC=25 42 A Continuous Drain Current, VGS@10V ID @TC=100 26 A 195 A 45 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Operating Junction and Storage Temperature Range Tj, Tstg Linear Derating Factor -55 ~ +150 0.36 W/ Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-case Max. Rthj-c 2.8 /W Thermal Resistance Junction-ambient Max. Rthj-a 110 /W GJ9960 Page: 1/4 ISSUED DATE :2004/12/21 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 40 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.032 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 30 - S VDS=10V, ID=20A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=40V, VGS=0 - - 25 uA VDS=32V, VGS=0 - - 16 - - 25 Qg - 18 - Gate-Source Charge Qgs - 6 - Gate-Drain (“Miller”) Change Qgd - 12 - Td(on) - 9 - Tr - 110 - Td(off) - 23 - Tf - 10 - Input Capacitance Ciss - 1500 - Output Capacitance Coss - 250 - Reverse Transfer Capacitance Crss - 180 - Symbol Min. Typ. Max. Unit VSD - - 1.3 V IS=45A, VGS=0V Reverse Recovery Time Trr - 22 - ns Reverse Recovery Charge Qrr - 27.4 - nC IS=20A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA ID=20A, VGS=10V ID=18A, VGS=4.5V nC ID=20A VDS=20V VGS=4.5V ns VDS=20V ID=20A VGS=10V RG=3.3 RD=1 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GJ9960 Page: 2/4 ISSUED DATE :2004/12/21 REVISED DATE : Characteristics Curve GJ9960 Page: 3/4 ISSUED DATE :2004/12/21 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ9960 Page: 4/4