GTM GJ9T18

Pb Free Plating Product
ISSUED DATE :2005/04/06
REVISED DATE :
GJ9T 18
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
20V
14m
38A
Description
The GJ9T18 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Capable of 2.5V gate drive
*Low Gate Charge
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current, [email protected]
ID @TC=25
38
A
Continuous Drain Current, [email protected]
ID @TC=100
24
A
140
A
31.3
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
0.25
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
W/
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
4
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
110
/W
GJ9T18
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ISSUED DATE :2005/04/06
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.1
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.5
V
VDS=VGS, ID=250uA
gfs
-
33
-
S
VDS=5V, ID=18A
IGSS
-
-
±100
nA
VGS= ±12V
-
-
1
uA
VDS=20V, VGS=0
-
-
25
uA
VDS=12V, VGS=0
-
-
14
-
-
28
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=4.5V, ID=18A
VGS=2.5V, ID=9A
Total Gate Charge2
Qg
-
16
25
Gate-Source Charge
Qgs
-
3
-
Gate-Drain (“Miller”) Change
Qgd
-
9
-
Td(on)
-
12
-
Tr
-
80
-
Td(off)
-
22
-
Tf
-
12
-
Input Capacitance
Ciss
-
1115
1790
Output Capacitance
Coss
-
280
-
Reverse Transfer Capacitance
Crss
-
220
-
Rg
-
1.54
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.3
V
IS=18A, VGS=0V
Reverse Recovery Time
Trr
-
19
-
ns
Reverse Recovery Charge
Qrr
-
11
-
nC
IS=18A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
nC
ID=18A
VDS=16V
VGS=4.5V
ns
VDS=10V
ID=18A
VGS=5V
RG=3.3
RD=0.56
pF
VGS=0V
VDS=20V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
2
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ9T18
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ISSUED DATE :2005/04/06
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GJ9T18
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/04/06
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ9T18
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