PANJIT GMZJ3.3

DATA SHEET
GMZJ2.0~GMZJ56
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.0 to 56 Volts
500 mWatts
POWER
MICRO-MELF
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
.049(1.25)
.047(1.2)DIA.
• Ideally Suited for Automated Assembly Processes
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.043(1.1)
.008(0.2)
MECHANICAL DATA
.008(0.2)
.079(2.0)
.071(1.8)
• Case: Molded Glass MICRO-MELF
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.01 grams
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Value
Units
PTOT
500
mW
Junction Temperature
TJ
175
O
C
Storage Temperature Range
TS
-65 to +175
O
C
Power Dissipation at Tamb = 25
O
C
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Symbol
Mi n.
Typ.
Max.
Uni ts
RthA
--
--
0.3
K/mW
VF
--
--
1
V
Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
STAD-SEP.14.2004
PAGE . 1
Part Number
GMZJ 2.0
GMZJ 2.2
GMZJ 2.4
GMZJ 2.7
GMZJ 3.0
GMZJ 3.3
GMZJ 3.6
GMZJ 3.9
GMZJ 4.3
GMZJ 4.7
GMZJ 5.1
GMZJ 5.6
GMZJ 6.2
GMZJ 6.8
GMZJ 7.5
GMZJ 8.2
GMZJ 9.1
GMZJ 10
GMZJ 11
STAD-SEP.14.2004
C LA S S
V Z @ IZT
M i n. V
M a x. V
A
1.88
2.10
B
2.02
2.20
A
2.12
2.30
B
2.22
2.41
A
2.33
2.52
B
2.43
2.63
A
2.54
2.75
B
2.69
2.91
A
2.85
3.07
B
3.01
3.22
A
3.16
3.38
B
3.32
3.53
A
3.455
3.695
B
3.60
3.845
A
3.74
4.01
B
3.89
4.16
A
4.04
4.29
B
4.17
4.43
C
4.30
4.57
A
4.44
4.68
B
4.55
4.80
C
4.68
4.93
A
4.81
5.07
B
4.94
5.20
C
5.09
5.37
A
5.28
5.55
B
5.45
5.73
C
5.61
5.91
A
5.78
6.09
B
5.96
6.27
C
6.12
6.44
A
6.29
6.63
B
6.49
6.83
C
6.66
7.01
A
6.85
7.22
B
7.07
7.45
C
7.29
7.67
A
7.53
7.92
B
7.78
8.19
C
8.03
8.45
A
8.29
8.73
B
8.57
9.01
C
8.83
9.30
A
9.12
9.59
B
9.41
9.90
C
9.70
10.20
D
9.94
10.44
A
10.18
10.71
B
10.50
11.05
C
10.82
11.38
IZ
(m A )
VR
(V )
IR ( u A )
MA X
Iz t
(mA )
Z ZT (Ω )
MA X
IZK
(m A)
Z ZK (Ω )
MA X
5
0.5
120
5
100
0.5
1000
5
0.7
100
5
100
0.5
1000
5
1.0
120
5
100
0.5
1000
5
1.0
100
5
110
0.5
1000
5
1.0
50
5
120
0.5
1000
5
1.0
20
5
120
0.5
1000
5
1.0
10
5
100
1
1000
5
1.0
5
5
100
1
1000
5
1.0
5
5
100
1
1000
5
1.0
5
5
90
1
900
5
1.5
5
5
80
1
800
5
2.5
5
5
60
1
500
5
3.0
5
5
60
1
300
5
3.5
2
5
20
0.5
150
5
4.0
0.5
5
20
0.5
120
5
5.0
0.5
5
20
0.5
120
5
6.0
0.5
5
25
0.5
120
5
7.0
0.2
5
30
0.5
120
5
8.0
0.2
5
30
0.5
120
PAGE . 2
Part Number
GMZJ 12
GMZJ 13
GMZJ 15
GMZJ 16
GMZJ 18
GMZJ 20
GMZJ 22
GMZJ 24
GMZJ 27
GMZJ 30
GMZJ 33
GMZJ 36
GMZJ 39
C LA S S
V Z @ IZT
M i n. V
M a x. V
A
11.13
11.71
B
11.44
12.03
C
11.74
12.35
A
12.11
12.75
B
12.55
13.21
C
12.99
13.66
A
13.44
14.13
B
13.89
14.62
C
14.35
15.09
A
14.80
15.57
B
15.25
16.04
C
15.69
16.51
A
16.22
17.06
B
16.82
17.70
C
17.42
18.33
A
18.02
18.96
B
18.63
19.59
C
19.23
20.22
D
19.72
20.72
A
20.15
21.20
B
20.64
21.71
C
21.08
22.17
D
21.52
22.63
A
22.05
23.18
B
22.61
23.77
C
23.12
24.31
D
23.63
24.85
A
24.26
25.52
B
24.97
26.26
C
25.63
26.95
D
26.29
27.64
A
26.99
28.39
B
27.70
29.13
C
28.36
29.82
D
29.02
30.51
A
29.68
31.22
B
30.32
31.88
C
30.90
32.50
D
31.49
33.11
A
32.14
33.79
B
32.79
34.49
C
33.40
35.13
D
34.01
35.77
A
34.68
36.47
B
35.36
37.19
C
36.00
37.85
D
IZ
(m A )
VR
(V )
IR ( u A )
MA X
Iz t
(mA )
Z ZT (Ω )
MA X
IZK
(m A)
Z ZK (Ω)
MA X
5
9.0
0.2
5
30
0.5
110
5
10
0.2
5
35
0.5
110
5
11
0.2
5
40
0.5
110
5
12
0.2
5
40
0.5
150
5
13
0.2
5
45
0.5
150
5
15
0.2
5
55
0.5
200
5
17
0.2
5
30
0.5
200
5
19
0.2
5
35
0.5
200
5
21
0.2
5
45
0.5
250
5
23
0.2
5
55
0.5
250
5
25
0.2
5
65
0.5
250
5
27
0.2
5
75
0.5
250
5
30
0.2
5
85
0.5
250
36.63
38.52
GMZJ 43
40.00
45.00
5
33
0.2
5
90
--
--
GMZJ 47
44.00
49.00
5
36
0.2
5
90
--
--
GMZJ 51
48.00
54.00
5
39
0.2
5
110
--
--
GMZJ 56
53.00
60.00
5
43
0.2
5
110
--
--
STAD-SEP.14.2004
PAGE . 3
1.3
VZtn – RelativeVoltageChange
500
400
300
l
l
200
100
0
5
10
TK VZ =10 x 10–4/K
8 x 10–4/K
6 x 10–4/K
1.1
4 x 10–4/K
2 x 10–4/K
0
1.0
–2 x 10–4/K
–4 x 10–4/K
0.9
0.8
–60
20
15
l – Lead Length ( mm )
500
400
300
200
100
0
40
80
120
160
200
Tamb – Ambient Temperature(°C )
95 9602
60
120
180
240
Fig. 4 Typical Change of Working Voltage vs. Junction
Temperature
600
0
0
Tj – Junction Temperature (°C )
95 9599
Fig. 1 Thermal Resistance vs. Lead Length
Ptot –Total Power Dissipation ( mW)
1.2
TL=constant
0
95 9611
15
10
5
I Z=5mA
0
–5
0
10
20
30
40
50
V Z – Z-Voltage ( V )
95 9600
Fig. 2 Total Power Dissipation vs. Ambient Temperature
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
1000
200
CD – Diode Capacitance ( pF )
VZ –VoltageChange( mV )
V Ztn=V Zt/V Z(25°C)
TK VZ –Temperature Coefficient of VZ ( 10–4 /K)
RthJA –Therm.Resist.Junction/ Ambient ( K/W)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Tj =25°C
100
I Z=5mA
10
150
V R=2V
Tj =25°C
100
1
50
0
0
95 9598
5
10
15
20
25
V Z – Z-Voltage ( V )
Fig. 3 Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
STAD-SEP.14.2004
0
95 9601
5
10
15
20
25
V Z – Z-Voltage ( V )
Fig. 6 Diode Capacitance vs. Z-Voltage
PAGE . 4
50
10
40
IZ – Z-Current ( mA)
I F – Forward Current ( mA)
100
Tj =25°C
1
0.1
30
20
10
0.01
0
0.001
0
0.2
0.4
0.6
0.8
15
1.0
V F – Forward Voltage ( V )
95 9605
r Z – Differential Z-Resistance ( Ω )
IZ – Z-Current ( mA)
25
Ptot=500mW
Tamb=25°C
60
40
20
1000
I Z=1mA
100
0
5mA
10 10mA
Tj =25°C
1
0
4
8
12
16
20
0
V Z – Z-Voltage ( V )
95 9604
35
30
V Z – Z-Voltage ( V )
Fig. 9 Z-Current vs. Z-Voltage
100
80
20
95 9607
Fig. 7 Forward Current vs. Forward Voltage
5
10
15
20
25
V Z – Z-Voltage ( V )
95 9606
Fig. 8 Z-Current vs. Z-Voltage
Zthp –ThermalResistancefor PulseCond.(K/W)
Ptot=500mW
Tamb=25°C
Fig. 10 Differential Z-Resistance vs. Z-Voltage
1000
tp/T=0.5
100
tp/T=0.2
Single Pulse
10
RthJA=300K/W
T=Tjmax–Tamb
tp/T=0.01
tp/T=0.1
tp/T=0.02
tp/T=0.05
1
10–1
95 9603
i ZM =(–VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj)
100
101
102
tp – Pulse Length ( ms )
Fig. 11 Thermal Response
STAD-SEP.14.2004
PAGE . 5