ETC GS9013E/E7

GS9013
Vishay Semiconductors
New Product
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-226AA ( TO-92)
0.142 (3.6)
0.181 (4.6)
Features
min. 0.492 (12.5) 0.181 (4.6)
• NPN Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for AFdriver stages and low power output stages such as
portable radios in class-B push-pull operation.
• Complementary to GS9012
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk- 5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
max. ∅
0.022 (0.55)
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
IC
500
Collector Current
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Ptot
RθJA
mA
(1)
mW
(1)
°C/W
625
200
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88196
10-May-02
www.vishay.com
1
GS9013
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (T
Parameter
DC Current Gain
J
= 25°C unless otherwise noted)
Symbol
Current Gain Group D
E
F
G
H
Test Condition
Min
Typ
Max
VCE = 1V, IC = 50mA
64
78
96
112
144
—
—
—
—
—
91
112
135
166
202
VCE = 1V, IC = 500mA
40
120
—
hFE
Unit
—
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
20
—
—
V
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100µA, IE = 0
40
—
—
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 100µA, IC = 0
5
—
—
V
Collector Cut-off Current
ICBO
VCB = 25V, IE = 0
—
—
100
nA
Emitter Cut-off Current
IEBO
VEB = 3V, IC = 0
—
—
100
nA
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 500mA, IB = 50mA
—
0.16
0.6
V
Base-Emitter Saturation Voltage
VBE(sat)
IC = 500mA, IB = 50mA
—
0.91
1.2
V
Base-Emitter ON Voltage
VBE(on)
VCE = 1V, IC = 10mA
0.6
0.67
0.7
V
www.vishay.com
2
Document Number 88196
10-May-02