GTM GT2530

Pb Free Plating Product
ISSUED DATE :2006/01/23
REVISED DATE :
N-CH BVDSS
30V
N-CH RDS(ON) 72m
N-CH ID
3.3A
P-CH BVDSS
-30V
N-CH RDS(ON) 150m
N-CH ID
-2.3A
GT2530
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Change
*Low On-resistance
*RoHS Compliant
Package Dimensions
REF.
A
Max.
3.10
B
C
D
2.60
1.40
0.30
E
F
0
0°
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Millimeter
Min.
2.70
REF.
Dimensions
G
Millimeter
1.90 REF.
3.00
1.80
0.55
H
I
J
1.20 REF.
0.12 REF.
0.37 REF.
0.10
10°
K
L
0.60 REF.
0.95 REF.
Ratings
N-channel P-channel
Unit
VDS
30
-30
V
VGS
±20
±20
V
Continuous Drain Current
3
ID @TA=25
3.3
-2.3
A
Continuous Drain Current
3
ID @TA=70
2.6
-1.8
A
10
-10
A
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TA=25
Linear Derating Factor
1.14
0.01
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
110
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GT2530
3
Max.
Unit
/W
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ISSUED DATE :2006/01/23
REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.02
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
4
-
S
VDS=5V, ID=3A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
1
uA
VDS=30V, VGS=0
-
-
25
uA
VDS=24V, VGS=0
-
-
72
-
-
125
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=10V, ID=3A
VGS=4.5V, ID=2A
Total Gate Charge2
Qg
-
3
5
Gate-Source Charge
Qgs
-
1
-
Gate-Drain (“Miller”) Change
Qgd
-
2
-
Td(on)
-
6
-
Tr
-
8
-
Td(off)
-
11
-
Tf
-
2
-
Input Capacitance
Ciss
-
170
270
Output Capacitance
Coss
-
50
-
Reverse Transfer Capacitance
Crss
-
35
-
Rg
-
0.5
0.8
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.3
V
IS=0.9A, VGS=0V
Reverse Recovery Time
Trr
-
14
-
ns
Reverse Recovery Charge
Qrr
-
7
-
nC
IS=3A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
nC
ID=3A
VDS=25V
VGS=4.5V
ns
VDS=15V
ID=1A
VGS=10V
RG=3.3
RD=15
pF
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
GT2530
Page: 2/7
ISSUED DATE :2006/01/23
REVISED DATE :
P-Channel Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
-0.03
-
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
gfs
-
2
-
S
VDS=-5V, ID=-2A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
-1
uA
VDS=-30V, VGS=0
-
-
-25
uA
VDS=-24V, VGS=0
-
-
150
-
-
280
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=-250uA
Reference to 25 , ID=-1mA
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-1A
Total Gate Charge2
Qg
-
3
5
Gate-Source Charge
Qgs
-
1
-
Gate-Drain (“Miller”) Change
Qgd
-
2
-
Td(on)
-
6
-
Tr
-
8
-
Td(off)
-
17
-
Tf
-
4
-
Input Capacitance
Ciss
-
150
240
Output Capacitance
Coss
-
50
-
Reverse Transfer Capacitance
Crss
-
40
-
Rg
-
8
12
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.3
V
IS=-0.9A, VGS=0V
Reverse Recovery Time
Trr
-
15
-
ns
Reverse Recovery Charge
Qrr
-
7
-
nC
IS=-2A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
nC
ID=-2A
VDS=-25V
VGS=-4.5V
ns
VDS=-15V
ID=-1A
VGS=-5V
RG=3.3
RD=15
pF
VGS=0V
VDS=-25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
GT2530
Page: 3/7
ISSUED DATE :2006/01/23
REVISED DATE :
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GT2530
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2006/01/23
REVISED DATE :
N-Channel
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
GT2530
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Page: 5/7
ISSUED DATE :2006/01/23
REVISED DATE :
P-Channel
Fig 1. Typical Output Characteristics
GT2530
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 6/7
ISSUED DATE :2006/01/23
REVISED DATE :
P-Channel
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GT2530
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