Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GT2625 BVDSS RDS(ON) ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 135m -2.3A Description The GT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GT2625 is universally used for all commercial-industrial applications. Features *Low Gate Charge *Low On-resistance Package Dimensions REF. Millimeter A Min. 2.70 Max. 3.10 B C D 2.60 1.40 0.30 E F 0 0° REF. Dimensions G Millimeter 1.90 REF. 3.00 1.80 0.55 H I J 1.20 REF. 0.12 REF. 0.37 REF. 0.10 10° K L 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings -30 12 -2.3 -2.0 -20 1.2 0.01 -55 ~ +150 Symbol Rthj-a Ratings 110 Unit /W 1/4 ISSUED DATE :2005/05/18 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.02 - Gate Threshold Voltage VGS(th) -0.5 - -1.2 V VDS=VGS, ID=-250uA gfs - 3.3 - S VDS=-5V, ID=-2.0A IGSS - - 100 nA VGS= - - -1 uA VDS=-30V, VGS=0 - - -25 uA VDS=-24V, VGS=0 - - 135 - - 185 - - 265 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) 2 Static Drain-Source On-Resistance IDSS RDS(ON) V/ Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA 12V VGS=-10V, ID=-2.0A m VGS=-4.5V, ID=-1.6A VGS=-2.5V, ID=-1.0A Total Gate Charge2 Qg - 4 6 Gate-Source Charge Qgs - 0.5 - Gate-Drain (“Miller”) Change Qgd - 2 - Td(on) - 5 - Tr - 6 - Td(off) - 20 - Tf - 3 - Input Capacitance Ciss - 265 425 Output Capacitance Coss - 42 - Reverse Transfer Capacitance Crss - 32 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-1.0A, VGS=0V Reverse Recovery Time Trr - 21 - ns Reverse Recovery Charge Qrr - 16 - Nc IS=-2.0A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=-2.0A VDS=-24V VGS=-4.5V ns VDS=-15V ID=-1.0A VGS=-10V RG=3.3 RD=15 pF VGS=0V VDS=-25V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 180 /W when mounted on Min. copper pad. 2/4 ISSUED DATE :2005/05/18 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 ISSUED DATE :2005/05/18 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4