GTM GTS217E

ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
GTS217E
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
20V
22m
7A
Description
The GTS217E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
Package Dimensions
REF.
Millimeter
Min.
Max.
-
1.20
0.05
0.15
b
c
0.19
0.30
0.09
D
2.90
A
A1
REF.
E
E1
Millimeter
Min.
Max.
6.20
6.60
4.30
4.50
0.20
e
L
0.45
0.75
3.10
S
0°
8°
0.65 BSC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
Ratings
Unit
VDS
20
V
VGS
±12
V
Continuous Drain Current
3
ID @TA=25
7
A
Continuous Drain Current
3
ID @TA=70
5.7
A
30
A
1.5
W
Pulsed Drain Current
1
IDM
Total Power Dissipation
PD @TA=25
Linear Derating Factor
0.012
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
83
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GTS217E
3
Max.
Unit
/W
Page: 1/4
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
0.5
-
1.0
V
VDS=VGS, ID=250uA
gfs
-
24
-
S
VDS=5V, ID=7A
IGSS
-
-
±10
uA
VGS= ±10V
-
-
1
uA
VDS=16V, VGS=0
-
-
5
uA
VDS=16V, VGS=0
-
-
22
-
-
30
Qg
-
9.3
-
Gate-Source Charge
Qgs
-
0.6
-
Gate-Drain (“Miller”) Change
Qgd
-
3.6
-
Td(on)
-
820
-
Tr
-
934
-
Td(off)
-
860
-
Tf
-
510
-
Input Capacitance
Ciss
-
231
Output Capacitance
Coss
-
164
-
Reverse Transfer Capacitance
Crss
-
137
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.0
V
IS=1.0A, VGS=0V
Reverse Recovery Time2
Trr
-
15.2
-
ns
Reverse Recovery Charge
Qrr
-
6.3
-
nC
IS=7A, VGS=0V
dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-
2.5
A
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
Static Drain-Source On-Resistance
2
Total Gate Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
IDSS
RDS(ON)
m
Test Conditions
VGS=4.5V, ID=6.6A
VGS=2.5V, ID=5.5A
nC
ID=7A
VDS=10V
VGS=4.5V
ns
VDS=10V
ID=1A
VGS=4.5V
RG=6
RL=10
pF
VGS=0V
VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Test Conditions
VD=VG=0V, VS=1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
GTS217E
Page: 2/4
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
Fig 4. On-Resistance v.s.
Junction Temperature
10
1
0.1
0.01
0.001
0.0001
0.00001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
GTS217E
Fig 6. Body Diode Characteristics
Page: 3/4
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Power Rating
Junction-to-Ambient
v.s. Junction Temperature
Fig 9. Gate Charge Characteristics
Fig 10. Normalized Maximum Transient Thermal Impedance
Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTS217E
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