RENESAS HAT3021R

HAT3021R
Silicon N/P Channel Power MOS FET
Power Switching
REJ03G0415-0200
Rev.2.00
Oct.06.2004
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
Outline
SOP-8
7 8
D D
2
G
5 6
D D
4
G
8
5
7 6
3
1 2
S1
S3
Nch
Pch
4
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Tch
Ratings
Nch
Pch
80
±20
3.4
20.4
3.4
1.5
–80
±20
–2.6
–15.6
–2.6
1.5
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Rev.2.00, Oct.06.2004, page 1 of 10
Unit
V
V
A
A
A
W
°C
°C
HAT3021R
Electrical Characteristics
(Ta = 25°C)
• N Channel
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.2.00, Oct.06.2004, page 2 of 10
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
Min
80
±20
—
—
1.0
—
—
4.2
—
—
—
—
—
—
—
Typ
—
—
—
—
—
90
100
7.0
400
57
24
7.3
1.1
1.3
6.0
Max
—
—
± 10
1
2.5
115
145
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
tr
—
—
—
—
—
4.0
39
3.5
0.83
30
—
—
—
1.08
—
ns
ns
ns
V
ns
td(off)
tf
VDF
trr
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 1.7 A, VGS = 10 V Note4
ID = 1.7 A, VGS = 4.5 V Note4
ID = 1.7 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 3.4 A
VGS = 10 V, ID = 1.7 A
VDD ≅ 30 V
RL = 17.6 Ω
Rg = 4.7 Ω
IF = 3.4 A, VGS = 0 Note4
IF = 3.4 A, VGS = 0
diF/ dt = 100 A/ µs
HAT3021R
• P Channel
Item
Drain to source breakdown
voltage
Symbol
V(BR)DSS
Min
–80
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
±20
—
—
–1.0
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
165
200
3.3
930
90
56
16
2.1
2.4
20
12
40
—
±10
–1
–2.5
210
290
—
—
—
—
—
—
—
—
—
—
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –80 V, VGS = 0
VDS = –10 V, I D = –1 mA
ID = –1.3 A, VGS = –10 V Note4
ID = –1.3 A, VGS = – 4.5 V Note4
ID = –1.3 A, VDS = –10 V Note4
VDS = –10 V
VGS = 0
f = 1MHz
tf
VDF
trr
—
—
—
5.5
–0.83
30
—
–1.08
—
ns
V
ns
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Rev.2.00, Oct.06.2004, page 3 of 10
VDD = –25 V
VGS = –10 V
ID = -2.6 A
VGS = –10 V, ID = –1.3 A
VDD ≈ –30 V
RL = 23.0 Ω
Rg = 4.7 Ω
IF = –2.6 A, VGS = 0 Note4
IF = –2.6 A, VGS = 0
diF/ dt =100A/µs
HAT3021R
Main Characteristics
• N Channel
Power vs. Temperature Derating
3.0
2.0
1.0
10
10 µs
0µ
1m s
s
10
ID (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
PW
DC
1
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
100
4.0
=1
0m
s(
Op
era
0.1 Operation in
1s
tio
n(
PW
this area is
limited by RDS(on)
ho
t)
≤1
No
0 ste 4
)
0.01
Ta = 25°C
0
50
100
Ambient Temperature
150
200
0.001 1 shot Pulse
0.1
1
10
100
Drain to Source Voltage VDS (V)
Ta (°C)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
3.2 V
5
3.0 V
VGS = 2.8 V
VDS = 10 V
Pulse Test
ID (A)
4.5 V
10 V
Drain Current
Drain Current
Typical Transfer Characteristics
10
3.4 V
ID (A)
10
5
Pulse Test
500
5
Drain to Source Voltage VDS
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Pulse Test
400
300
200
ID = 2 A
100
1A
0.5 A
0
15
5
10
20
Gate to Source Voltage VGS (V)
Rev.2.00, Oct.06.2004, page 4 of 10
0
10
(V)
5
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
Tc = 75°C
25°C
−25°C
2
3
4
Gate to Source Voltage VGS
100
VGS = 4.5 V
10 V
10
0.1
Pulse Test
1
Drain Current
10
ID (A)
100
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
ID = 0.5 A, 1 A, 2 A
200
150
VGS = 4.5 V
0.5 A, 1 A, 2 A
100
50
0
-25
10 V
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
3
1
0.3
0.1
25°C
75°C
0.01
0.01
1
3
10
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Ciss
500
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
1
3
Reverse Drain Current
200
100
50
Coss
20
Crss
10
5
VGS = 0
f = 1 MHz
2
0
10
IDR (A)
VDD = 50 V
25 V
10 V
VDS
12
40
8
20
0
4
VDD = 50 V
25 V
10 V
2
4
Gate Charge
Rev.2.00, Oct.06.2004, page 5 of 10
6
8
Qg (nC)
40
50
0
10
td(off)
50
Switching Time t (ns)
60
VGS
16
VGS
80
30
Switching Characteristics
(V)
ID = 3.4 A
20
100
20
Gate to Source Voltage
100
10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
0.3
1000
10
Drain to Source Voltage
0.03 0.1
Drain Current
Body-Drain Diode Reverse
Recovery Time
100
VDS = 10 V
Pulse Test
0.03
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT3021R
20
tf
10
5
td(on)
tr
2 VGS = 10 V, VDD = 30 V
Rg = 4.7 Ω, duty ≤ 1 %
1
0.1 0.2
1
2
0.5
5
Drain Current ID (A)
10
HAT3021R
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
10
10 V
5
5V
VGS = 0 V, –5 V
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
0.5
1
0.2
0.1
0.05
0.1
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
1
0.0
lse
t pu
o
h
1s
0.01
PDM
D=
0.001
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
1000
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 30 V
Vout
10%
10%
90%
td(on)
Rev.2.00, Oct.06.2004, page 6 of 10
10000
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
100
tr
10%
90%
td(off)
tf
HAT3021R
• P Channel
Power vs. Temperature Derating
3.0
10 µs
2.0
1.0
10
ID (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
100
4.0
PW
1
DC
10
0
1 m µs
s
=1
0m
s(
Op
era
0.1
1s
tio
n(
PW
Operation in
this area is
0.01 limited by RDS(on)
ho
t)
≤ 1Note
0s 4
)
Ta = 25°C
0
50
100
Ambient Temperature
150
200
0.001 1 shot Pulse
0.1
1
10
100
Drain to Source Voltage VDS (V)
Ta (°C)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
–5.0
Typical Transfer Characteristics
–5
-10 V
-4.5 V
–4
–2.5
VGS = -2.8 V
Drain Current
ID (A)
ID (A)
Drain Current
VDS = 10 V
Pulse Test
-3.0 V
–3
–2
Tc = 75°C
25°C
–1
−25°C
Pulse Test
–1000
–5
Drain to Source Voltage VDS
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Pulse Test
–800
–600
–400
ID = –2 A
–200
–1 A
–0.5 A
0
–4
–8
–12
Gate to Source Voltage
Rev.2.00, Oct.06.2004, page 7 of 10
0
–10
(V)
–16
–20
VGS (V)
–2
–4
–6
Gate to Source Voltage
–8
VGS
–10
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
VGS = –4.5 V
100
10
–0.1
–10 V
–1
Drain Current
–10
ID (A)
Static Drain to Source on State Resistance
vs. Temperature
500
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT3021R
–2 A
400
ID = –0.5 A, –1 A
300
VGS = 4.5 V
200
–0.5 A, –1 A, –2 A
100
10 V
0
-25
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25°C
2
1
0.5
25°C
0.2
75°C
0.1
0.05
VDS = 10 V
Pulse Test
0.02
0.01
0
0
25 50 75 100 125 150
Case Temperature Tc (°C)
–0.03 –0.1 –0.3
Drain Current
Reverse Recovery Time trr (ns)
100
Capacitance C (pF)
50
20
10
–0.1
di / dt = –100 A / µs
VGS = 0, Ta = 25°C
2000
Ciss
1000
500
200
100
Coss
50
Crss
20
10
0
–0.3
–1
–3
–10
Reverse Drain Current IDR (A)
–8
VGS
–12
–80
–16
ID = –2.6 A
4
8
12
16
Gate Charge Qg (nC)
Rev.2.00, Oct.06.2004, page 8 of 10
–20
20
VGS
–4
50
Switching Time t (ns)
VDS
(V)
VDD = –50 V
–25 V
–10 V
VDD = –50 V
–25 V
–10 V
–30
–40
–50
100
0
–40
–20
Switching Characteristics
0
–20
–10
Drain to Source Voltage VDS (V)
Gate to Source Voltage
VDS (V)
ID (A)
VGS = 0
f = 1 MHz
Dynamic Input Characteristics
Drain to Source Voltage
–10
10000
5000
–100
0
–3
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
–60
–1
20
td(off)
tr
td(on)
10
tf
5
2
1
–0.1
VGS = –10 V, VDS = –30 V
Rg = 4.7 Ω, duty ≤ 1 %
–1
Drain Current
–10
ID (A)
HAT3021R
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
–5.0
–10 V
–5 V
–2.5
VGS = 0V, 5 V
Pulse Test
0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage
–2.0
VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.05
0.02
0.01
0.01
e
uls
PDM
p
ot
D=
h
1s
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
Vin
10%
D.U.T.
RL
90%
Vin
-10 V
V DD
= -30 V
Vout
td(on)
Rev.2.00, Oct.06.2004, page 9 of 10
90%
90%
10%
10%
tr
td(off)
tf
HAT3021R
Package Dimensions
As of January, 2003
Unit: mm
3.95
4.90
5.3 Max
5
8
1
1.75 Max
*0.22 ± 0.03
0.20 ± 0.03
4
0.75 Max
+ 0.10
6.10 – 0.30
1.08
1.27
*0.42 ± 0.08
0.40 ± 0.06
0.14 – 0.04
+ 0.11
0˚ – 8˚
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Package Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
Ordering Information
Part Name
HAT3021R-EL-E
Quantity
2500 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Oct.06.2004, page 10 of 10
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Colophon .2.0