STMICROELECTRONICS HCF4030BM1

HCF4030B
QUAD EXCLUSIVE-OR GATE
■
■
■
■
■
■
■
MEDIUM SPEED OPERATION - tPHL = tPLH =
65ns (TYP.) at CL = 50pF and VDD-VSS = 10V
LOW OUTPUT IMPEDANCE : 500 Ω (TYP.) at
VDD-VSS = 10V
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DIP
SOP
ORDER CODES
PACKAGE
TUBE
T&R
DIP
SOP
HCF4030BEY
HCF4030BM1
HCF4030M013TR
DESCRIPTION
HCF4030B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF4030B types consist of four indipendent
exclusive-OR gates integrated on a single
monolithic silicon chip. Each exclusive-OR gate
consists of four n-channel and four p-channel
enhancement-type transistors. All inputs and
outputs are protected against electrostatic effects.
PIN CONNECTION
September 2002
1/10
HCF4030B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
2, 1, 5, 6, 8, A, B, C, D, E,
Data Inputs
9, 12, 13
F, G, H
3, 4, 10, 11
J, K, L, M Data Outputs
VSS
Negative Supply Voltage
7
14
VDD
Positive Supply Voltage
TRUTH TABLE
IN1
IN2
OUT
L
L
H
H
L
H
L
H
L
H
H
L
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
Parameter
Supply Voltage
VI
DC Input Voltage
II
DC Input Current
PD
Value
Unit
-0.5 to +22
V
-0.5 to VDD + 0.5
± 10
mA
V
200
100
mW
mW
Top
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
-55 to +125
°C
Tstg
Storage Temperature
-65 to +150
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
2/10
HCF4030B
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
Parameter
Value
Supply Voltage
VI
Input Voltage
Top
Operating Temperature
Unit
3 to 20
V
0 to VDD
V
-55 to 125
°C
DC SPECIFICATIONS
Test Condition
Symbol
IL
VOH
VOL
VIH
VIL
IOH
IOL
II
CI
Parameter
VI
(V)
0/5
0/10
0/15
0/20
Output High
0/5
Voltage
0/10
0/15
Output Low Voltage 5/0
10/0
15/0
Input High Voltage
VO
(V)
|IO| VDD
(µA) (V)
Quiescent Current
Input Low Voltage
Output Drive
Current
Output Sink
Current
Input Leakage
Current
Input Capacitance
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/18
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
Value
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
Any Input
Any Input
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
10
15
18
TA = 25°C
Min.
Typ.
Max.
0.02
0.02
0.02
0.04
4
8
16
20
4.95
9.95
14.95
-40 to 85°C
-55 to 125°C
Min.
Min.
4
8
16
20
4.95
9.95
14.95
0.05
0.05
0.05
4.95
9.95
14.95
3.5
7
11
1.5
3
4
-3.2
-1
-2.6
-6.8
1
2.6
6.8
±0.1
5
7.5
0.05
0.05
0.05
1.5
3
4
V
V
1.5
3
4
-1.1
-0.36
-0.9
-2.4
0.36
0.9
2.4
±1
µA
V
3.5
7
11
-1.15
-0.36
-0.9
-2.4
0.36
0.9
2.4
±10-5
Max.
30
60
120
600
0.05
0.05
0.05
3.5
7
11
-1.36
-0.44
-1.1
-3.0
0.44
1.1
3.0
Max.
Unit
V
mA
mA
±1
µA
pF
The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Test Condition
Symbol
Parameter
tPLH tPHL Propagation Delay Time
tTLH tTHL Output Transition Time
VDD (V)
5
10
15
5
10
15
Value (*)
Min.
Unit
Typ.
Max.
140
65
50
100
50
40
280
130
100
200
100
80
ns
ns
3/10
HCF4030B
TYPICAL APPLICATION : EVEN PARITY-BIT GENERATOR
TYPICAL APPLICATION : EVEN PARITY-CHECKER
TYPICAL APPLICATION : ODD-PARITY-BIT GENERATOR
4/10
HCF4030B
TYPICAL APPLICATION : ODD-PARITY-CHECKER
TYPICAL APPLICATION : 8-BIT COMPARATOR
5/10
HCF4030B
TYPICAL APPLICATION : 8-BIT TWO’S COMPLEMENT ADDER-SUBSTRACTOR
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
6/10
HCF4030B
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
7/10
HCF4030B
Plastic DIP-14 MECHANICAL DATA
mm.
inch
DIM.
MIN.
a1
0.51
B
1.39
TYP
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
1.27
0.130
2.54
0.050
0.100
P001A
8/10
HCF4030B
SO-14 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45˚ (typ.)
D
8.55
E
5.8
8.75
0.336
6.2
0.228
0.344
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.68
0.026
8 ˚ (max.)
PO13G
9/10
HCF4030B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
10/10