HGTG24N60D1D 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 24A, 600V EMITTER COLLECTOR GATE • Latch Free Operation • Typical Fall Time <500ns COLLECTOR (BOTTOM SIDE METAL) • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. E PACKAGING AVAILABILITY PART NUMBER HGTG24N60D1D PACKAGE BRAND TO-247 G24N60D1D NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specific Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (0.125 inch from case for 5s) HGTG24N60D1D 600 600 40 24 96 ±25 60A at 0.8 BVCES 40 24 125 1.0 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-107 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 2797.4 Specifications HGTG24N60D1D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVCES Collector-Emitter Leakage Voltage ICES Collector-Emitter Saturation Voltage VCE(SAT) Gate-Emitter Threshold Voltage TEST CONDITIONS IC = 280µA, VGE = 0V TC = +25oC VCE = BVCES +125oC MIN TYP MAX UNITS 600 - - V - - 280 µA - - 5.0 mA VCE = 0.8 BVCES TC = IC = IC90, VGE = 15V TC = +25oC - 1.7 2.3 V TC = +125oC - 1.9 2.5 V 3.0 4.5 6.0 V VGE(TH) IC = 250µA, VCE = VGE Gate-Emitter Leakage Current IGES VGE = ±20V - - ±500 nA Gate-Emitter Plateau Voltage VGEP IC = IC90, VCE = 0.5 BVCES - 6.3 - V IC = IC90, VCE = 0.5 BVCES VGE = 15V - 120 155 nC VGE = 20V - 155 200 nC - 100 - ns - 150 - ns tD(OFF)I - 700 900 ns tFI - 450 600 ns Turn-Off Energy (Note 1) WOFF - 4.3 - mJ Thermal Resistance (IGBT) RθJC - - 1.00 oC/W Thermal Resistance Diode RθJC - - 1.50 oC/W Diode Forward Voltage VEC IEC = 24A - - 1.50 V Diode Reverse Recovery Time tRR IEC = 24A, di/dt = 100A/µs - - 60 ns On-State Gate Charge QG(ON) Current Turn-On Delay Time tD(ON)I Current Rise Time tRI Current Turn-Off Delay Time Current Fall Time TC = +25oC L = 500µH, IC = IC90, RG = 25Ω, VGE = 15V, TJ = +150oC, VCE = 0.8 BVCES NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTG24N60D1D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Typical Performance Curves PULSE DURATION = 250µs DUTY CYCLE < 0.5%, TC = +25oC 40 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VCE = 15V ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 40 30 TC = +150oC 20 TC = +25oC 10 TC = -40oC 0 0 2 4 6 8 10 VGE = 10V VGE = 7.0V 35 VGE = 15V 30 25 VGE = 6.5V 20 15 VGE = 6.0V 10 VGE = 5.0V 5 VGE = 5.5V 0 0 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL) 3-108 5 HGTG24N60D1D Typical Performance Curves (Continued) 50 1000 VGE = 15V 40 800 tFI , FALL TIME (ns) 30 20 10 700 600 500 400 300 200 100 0 +25 0 +50 +75 +100 +125 1 +150 10 ICE, COLLECTOR-EMITTER CURRENT (A) TC , CASE TEMPERATURE (oC) FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT 6000 600 VCE, COLLECTOR-EMITTER VOLTAGE (V) f = 1MHz C, CAPACITANCE (pF) 5000 10.0 450 4000 VCC = BVCES 2000 5.0 0.75 BVCES 0.75 BVCES 0.50 BVCES 0.50 BVCES 0.25 BVCES 0.25 BVCES 150 COSS 1000 CRSS 0 0 5 10 15 20 0 0 25 20 FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE 7.00 WOFF , TURN-OFF SWITCHING LOSS (mJ) VGE = 10V TJ = +150 C 2 VGE = 15V 1 0 10 IG(REF) IG(ACT) TIME (µs) 80 IG(REF) IG(ACT) FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) 3 o 2.5 RL = 30Ω IG(REF) = 1.83mA VGE = 10V VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE(ON), SATURATION VOLTAGE (V) 7.5 VCC = BVCES 300 CISS 3000 1 40 VGE, GATE-EMITTER VOLTAGE (V) ICE, COLLECTOR CURRENT (A) VCE = 480V, VGE = 10V AND 15V, TJ = +150oC, RG = 25Ω, L = 500µH 900 40 VCE, COLLECTOR-EMITTER CURRENT (A) TJ = +150oC, RG = 25Ω, L = 500µH VCE = 480V, VGE = 10V, 15V 1.00 VCE = 240V, VGE = 10V, 15V 0.10 0.05 1 10 40 ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT 3-109 FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT HGTG24N60D1D Typical Performance Curves (Continued) 1300 TJ = +150oC, TC = +100oC, RGE = 25Ω, L = 500µH 80 fOP , OPERATING FREQUENCY (kHz) tD(OFF)I , TURN-OFF DELAY (ns) 1200 VCE = 480V, VGE = 10V 1100 VCE = 480V, VGE = 15V 1000 900 800 VCE = 240V, VGE = 10V 700 VCE = 240V, VGE = 15V 600 500 TJ = +150oC RGE = 25Ω L = 500µH 400 300 10 VCE = 480V, VGE = 10V, 15V VCE = 240V, VGE = 10V, 15V 1 1 1 10 10 40 50 ICE, COLLECTOR-EMITTER CURRENT (A) NOTE: PD = ALLOWABLE DISSIPATION ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER CURRENT PC = CONDUCTION DISSIPATION FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE 80 100 70 10 TJ = t, RECOVERY TIMES (ns) IEC , EMITTER-COLLECTOR CURRENT (A) fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF PC = DUTY FACTOR = 50% RθJC = 1.0oC/W +150oC TJ = +100oC 1.0 TJ = +25oC 60 50 40 30 20 10 0.1 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 1.8 10 100 IEC , EMITTER-COLLECTOR CURRENT (A) VEC , EMITTER-COLLECTOR VOLTAGE (V) FIGURE 11. FORWARD VOLTAGE vs FORWARD CURRENT CHARACTERISTIC FIGURE 12. TYPICAL tRR, tA, tB vs FORWARD CURRENT Operating Frequency Information Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/WOFF . The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) and the conduction losses (PC) are approximated by PC = (VCE • ICE)/2. WOFF is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The switching power loss (Figure 10) is defined as fMAX2 • WOFF. Turn-on switching losses are not included because they can be greatly influenced by external circuit conditions and components. 3-110 HGTG24N60D1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 3-111 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029