HMC-ALH444 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems P1dB Output Power: +19 dBm @ 5 GHz • Point-to-Point Radios Supply Voltage: +5V @ 55 mA • Point-to-Multi-Point Radios Die Size: 2.64 x 1.64 x 0.1 mm • Military & Space • Test Instrumentation * VSAT General Description Functional Diagram The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage. Electrical Specifi cations*, TA = +25° C, Vdd= +5V Parameter Min. Frequency Range Gain 15 Gain Variation over Temperature Typ. Max. 1 - 12 GHz 17 dB 0.02 dB / °C Noise Figure 1.5 2 Input Return Loss 10 Output Return Loss 14 dB Output IP3 28 dBm Output Power for 1 dB Compression 19 dBm Supply Current (Idd) (Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) 55 mA *Unless otherwise indicated, all measurements are from probed die 0 - 48 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dB dB HMC-ALH444 v00.1007 Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency AMPLIFIERS - LOW NOISE - CHIP GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 5 V, Vg2= 1.5 V, Id= 55 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 - 49 HMC-ALH444 v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz AMPLIFIERS - LOW NOISE - CHIP Absolute Maximum Ratings Drain Bias Voltage +5.5 Vdc RF Input Power 12 dBm Gate Bias Voltage Vgg1 -1 to 0.3 Vdc Gate Bias Voltage Vgg2 0 to 2.5 Vdc Channel Temperature 180 °C Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” 0 - 50 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com