HITTITE HMC

HMC-MDB169
v01.0209
MIXERS - DOUBLE-BALANCED - CHIP
4
GaAs MMIC FUNDAMENTAL
MIXER, 54 - 64 GHz
Typical Applications
Features
This HMC-MDB169 is ideal for:
Passive Double Balanced Topology
• Short Haul / High Capacity Radios
High LO to RF Isolation: 30 dB
• Point-to-Multi-Point Equipment
Low Conversion Loss: 8 dB
• Military Radar, ECM & EW
Wide IF Bandwidth: DC - 5 GHz
• SATCOM
Die Size: 0.9 x 1.0 x 0.1 mm
Functional Diagram
General Description
The HMC-MDB169 is a passive Double Balanced
MMIC Mixer which utilizes GaAs Heterojunction Bipolar
Transistor (HBT) Shottky diode technology and can
be used as either an upconverter or a downconverter.
This compact mixer features wide IF bandwidth,
low conversion loss and high LO to RF and LO to IF
isolation. All bond pads and the die backside are Ti/Au
metallized and the Shottky devices are fully passivated
for reliable operation. The HMC-MDB169 Double
Balanced Mixer is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. This compact MMIC
is a much smaller and more consistent alternative to
hybrid style double balanced mixer assemblies. All
data shown herein is measured with the chip in a 50
Ohm environment and contacted with RF probes.
Electrical Specifi cations,[1] TA = 25 °C, IF = 2 GHz, LO = +13 dBm
Parameter
Min.
Typ.
Frequency Range, RF & LO
54 - 64
Frequency Range, IF
DC - 5
Max.
GHz
GHz
Conversion Loss
8
11
LO to RF Isolation
30
dB
LO to IF Isolation
25
dB
RF to IF Isolation
25
dB
IP3 (Input)
13
dBm
1 dB Compression (Input)
4
dBm
[1] Unless otherwise indicated, all measurements are from probed die
4 - 90
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
dB
HMC-MDB169
v01.0209
GaAs MMIC FUNDAMENTAL
MIXER, 54 - 64 GHz
Upconverter Conversion Loss
Note: Measured Performance Characteristics (TOP = 25°C)
RF = 59.5 - 64 GHz
LO = 59 GHz
IF = 0.1 - 5.0 GHz
PLO = +13 dBm
PRF = -10 dBm
-7
-9
-11
4
-13
-15
0
1
2
3
4
5
IF FREQUENCY (GHz)
Downconverter Conversion Loss
Note: Measured Performance Characteristics (TOP = 25°C)
CONVERSION LOSS (dB)
-5
RF = 57.5 - 64 GHz
LO = 55.5 - 62 GHz
IF = 2 GHz
PLO = +13 dBm
PRF = -5 dBm
-7
-9
-11
-13
-15
54
56
58
60
62
64
RF FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MIXERS - DOUBLE-BALANCED - CHIP
CONVERSION LOSS (dB)
-5
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HMC-MDB169
v01.0209
GaAs MMIC FUNDAMENTAL
MIXER, 54 - 64 GHz
Absolute Maximum Ratings
20 dBm
Storage Temperature
-65 °C to 150 °C
Operating Temperature
-55 °C to 85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
MIXERS - DOUBLE-BALANCED - CHIP
4
LO Drive
Die Packaging Information
[1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
Standard
Alternate
GP-2 (Gel Pack)
[2]
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
4 - 92
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-MDB169
v01.0209
GaAs MMIC FUNDAMENTAL
MIXER, 54 - 64 GHz
Pad Descriptions
Pad Number
Function
Pin Description
1
RF
This pad is DC coupled and matched to 50 Ohms.
2
IF
This pad is DC coupled.
3
LO
This pad is DC coupled and matched to 50 Ohms.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 93
HMC-MDB169
v01.0209
GaAs MMIC FUNDAMENTAL
MIXER, 54 - 64 GHz
Assembly Diagram
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 94
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-MDB169
v01.0209
GaAs MMIC FUNDAMENTAL
MIXER, 54 - 64 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
4
MIXERS - DOUBLE-BALANCED - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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