HMC572 v02.0809 3 GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz Typical Applications Features The HMC572 is ideal for: Conversion Gain: 8 dB • Point-to-Point and Point-to-Multi-Point Radio Image Rejection: 20 dB • Military Radar, EW & ELINT 2 LO to RF Isolation: 40 dB • Satellite Communications Noise Figure: 3.5 dB MIXERS - I/Q RECEIVERS - CHIP Input IP3: +5 dBm Die Size: 2.33 x 2.37 x 0.10 mm Functional Diagram General Description The HMC572 is a compact GaAs MMIC I/Q downconverter chip which provides a small signal conversion gain of 8 dB with a noise figure of 3.5 dB and 20 dB of image rejection across the frequency band. The device utilizes an LNA followed by an image reject mixer which is driven by an active x2 multiplier. The image reject mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90° hybrid is needed to select the required sideband. All data shown below is taken with the chip mounted in a 50 Ohm test fixture and includes the effects of 1 mil diameter x 20 mil length bond wires on each port. This product is a much smaller alternative to hybrid style image reject mixer downconverter assemblies. Electrical Specifi cations, TA = +25° C, IF = 100 MHz, LO = +4 dBm, Vdd = 3.5 Vdc* Parameter Min. Typ. Max. Min. Typ. Max. Frequency Range, RF 24.5 - 26.5 24 - 28 GHz Frequency Range, LO 9 - 15.5 9 - 15.5 GHz DC - 3.5 GHz 9 dB Frequency Range, IF Conversion Gain (As IRM) DC - 3.5 7 Noise Figure 9 7 3.5 Image Rejection 17 20 17 3.5 dB 23 dB 1 dB Compression (Input) -7 -5 -8 -6 dBm 2 LO to RF Isolation 40 43 38 45 dB 2 LO to IF Isolation 28 32 27 30 dB IP3 (Input) +5 +7 +3 +5 dBm 0.7 dB Amplitude Balance Phase Balance 0.3 5 Total Supply Current 125 7 165 125 Deg 165 *Data taken as IRM with external IF 90° hybrid 3 - 146 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC572 v02.0809 GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz Data Taken As IRM With External IF 90° Hybrid Conversion Gain vs. Temperature Image Rejection vs. Temperature 30 IMAGE REJECTION (dB) CONVERSION GAIN (dB) 15 10 5 +25C +85C -55C 0 -5 -10 3 25 20 15 +25C +85C -55C 10 5 23 24 25 26 27 28 29 23 24 RF FREQUENCY (GHz) Conversion Gain vs. LO Drive 26 27 29 0 15 RETURN LOSS (dB) -5 10 5 0 dBm +2dBm +4dBm +6dBm +8dBm 0 -5 -10 RF LO -15 -20 -10 -25 23 24 25 26 27 28 8 29 10 12 RF FREQUENCY (GHz) 14 16 18 20 22 25 -2 20 28 LO = 0 dBm LO = +2 dBm LO = +4 dBm LO = +6 dBm LO = +8 dBm -4 15 IP3 (dBm) -6 -8 -10 +25C +85C -55C -14 26 Input IP3 vs. LO Drive 0 -12 24 FREQUENCY (GHz) Input P1dB vs. Temperature P1dB (dBm) 28 Return Loss 20 CONVERSION GAIN (dB) 25 RF FREQUENCY (GHz) MIXERS - I/Q RECEIVERS - CHIP 20 10 5 0 -5 -16 -10 -18 -20 -15 23 24 25 26 27 RF FREQUENCY (GHz) 28 29 23 24 25 26 27 28 29 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 147 HMC572 v02.0809 GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz Quadrature Channel Data Taken Without IF 90° Hybrid Isolations IF Bandwidth* 10 20 10 -10 RESPONSE (dB) ISOLATION (dB) RF/IF2 RF/IF1 -20 2LO/IF1 -30 2LO/IF2 -40 5 0 -5 -10 2LO/RF -50 -15 -60 23 24 25 26 27 28 -20 0.5 29 1 1.5 RF FREQUENCY (GHz) 2 2.5 3 3.5 28 29 IF FREQUENCY (GHz) Amplitude Balance vs. LO Drive Phase Balance vs. LO Drive 20 4 3 PHASE BALANCE (degrees) 3.5 AMPLITUDE BALANCE (dB) MIXERS - I/Q RECEIVERS - CHIP 3 CONVERSION GAIN RETURN LOSS 15 0 LO = 0 dBm LO = +2 dBm LO = +4 dBm LO = +6 dBm LO = +8 dBm 2.5 2 1.5 1 0.5 0 LO = 0 dBm LO = +2 dBm LO = +4 dBm LO = +6 dBm LO = +8 dBm 15 10 5 0 -0.5 -1 -5 23 24 25 26 27 28 23 29 24 25 RF FREQUENCY (GHz) Noise Figure vs. LO Drive, LO Frequency = 12 GHz 27 Noise Figure vs. LO Drive, IF Frequency = 100 MHz 10 8 0dBm +2dBm +4dBm +6dBm +8dBm 6 8 NOISE FIGURE (dB) NOISE FIGURE (dB) 26 RF FREQUENCY (GHz) 4 2 0dBm +2dBm +4dBm +6dBm +8dBm 6 4 2 0 0.5 0 1 1.5 2 2.5 IF FREQUENCY (GHz) 3 3.5 4 21 22 23 24 25 26 27 RF FREQUENCY (GHz) * Conversion gain data taken with external IF 90° hybrid, LO frequency fi xed at 12 GHz and RF varied 3 - 148 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 28 29 HMC572 v02.0809 GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz RF +2 dBm LO Drive +13 dBm MxN Spurious Outputs nLO mRF 0 1 2 3 4 xx 46 15 32 38 40 Vdd 5.5V 0 Channel Temperature 175°C 1 15 39 0 35 2 xx xx 57 66 47 3 xx xx xx xx 82 4 xx xx xx xx xx Continuous Pdiss (T=85°C) (derate 10.2 mW/°C above 85°C) 920 mW Thermal Resistance (RTH) (channel to package bottom) 98.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C RF = 25 GHz @ -20 dBm LO = 12 GHz @ +4 dBm Data taken without IF hybrid All values in dBc below IF power level (1RF -2LO = 1 GHz) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 MIXERS - I/Q RECEIVERS - CHIP Absolute Maximum Ratings 3 - 149 HMC572 v02.0809 GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz Outline Drawing MIXERS - I/Q RECEIVERS - CHIP 3 Die Packaging Information [1] NOTES: Standard Alternate GP-1 (Gel Pack) [2] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS 0.004” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 150 3. BOND PAD METALIZATION: GOLD 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. OVERALL DIE SIZE ±0.002 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC572 v02.0809 GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz Pad Descriptions Function Description 1 VddRF Power supply for RF LNA. External RF bypass capacitors are required. 2 VddLO2 Power supply for second stage of LO amplifier. External RF bypass capacitors are required. 3 VddLO Power supply for first stage of LO amplifier. External RF bypass capacitors are required. 4 LO This pad is AC coupled and matched to 50 Ohms. 5 IF1 6 IF2 7 RF This pad is AC coupled and matched to 50 Ohms. GND The backside of the die must be connected to RF/DC ground. Interface Schematic This pad is DC coupled for applications not requiring operation to DC. This port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary frequency range. For operation to DC, this pad must not source / sink more than 3 mA of current or die non - function and possible die failure will result. Typical Application For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 MIXERS - I/Q RECEIVERS - CHIP Pad Number 3 - 151 HMC572 v02.0809 GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz Assembly Drawing MIXERS - I/Q RECEIVERS - CHIP 3 3 - 152 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC572 v02.0809 GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Figure 1. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 3 MIXERS - I/Q RECEIVERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 153