HMC694 v03.1108 GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz Typical Applications Features The HMC694 is ideal for: Wide Gain Control Range: 23 dB • Point-to-Point Radio Single Control Voltage • Point-to-Multi-Point Radio Output IP3 @ Max Gain: +30 dBm • EW & ECM Output P1dB: +22 dBm No External Matching • X-Band Radar Die Size: 2.26 x 0.97 x 0.1 mm • Test Equipment General Description Functional Diagram The HMC694 is a GaAs MMIC PHEMT analog variable gain amplifier die which operates between 6 and 17 GHz. Ideal for microwave radio applications, the amplifier provides up to 24 dB of gain, output P1dB of up to 22 dBm, and up to 30 dBm of Output IP3 at maximum gain, while requiring only 170 mA from a +5V supply. A gate bias (Vctrl) is provided to allow variable gain control up to 23 dB. Gain flatness is excellent from 6 to 17 GHz, making the HMC694 ideal for EW, ECM and radar applications. The HMC694 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size and no external matching. All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (12 mils). Variable gain amplifiers - CHIP 6 Electrical Specifications, TA = +25° C, Vdd1, 2, 3= 5V, Vctrl= -2V, Idd= 170 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 6 - 10 19 Gain Flatness 24 17 Typ. Max. Units 10 - 17 GHz 21 dB ±1 ±1.5 dB 0.03 0.03 dB/ °C Gain Control Range 23 20 dB Noise Figure 5.5 Input Return Loss 15 Gain Variation Over Temperature Output Return Loss Output Power for 1 dB Compression (P1dB) 7.5 5 12 10 19 21 21 6.5 dB dB 8 dB 22 dBm Saturated Output Power (Psat) 22 23 dBm Output Third Order Intercept (IP3) 30 30 dBm Total Supply Current (Idd) 170 170 mA *Set Vctrl = -2V and then adjust Vgg1, 2 between -2V to 0V (typ. -0.8V) to achieve Idd = 170mA typical. 6-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC694 v03.1108 GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz Control Voltage Range vs. Gain Gain vs. Control Voltage 25 25 6 GHz Vctl = -2.0V 20 Vctl = -1.2V Vctl = -1.3V 15 GAIN (dB) Vctl = -1.1V 10 15 17 GHz 10 Vctl = -1.0V 5 13 GHz 5 Vctl = -0.8V Vctl = 0V 0 5 7 9 11 13 15 17 0 -1.6 19 -1.4 FREQUENCY (GHz) 30 30 20 25 S21 S11 S22 -0.8 -0.6 -0.4 16 18 20 0 15 -10 10 -20 5 -30 +25C +85C -55C 0 4 6 8 10 12 14 16 18 20 22 24 26 6 8 FREQUENCY (GHz) 12 14 Output Return Loss vs. Temperature 0 -5 -5 RETURN LOSS (dB) 0 -10 -15 +25C +85C -55C -20 10 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) -1 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 10 -1.2 CONTROL VOLTAGE (V) -25 -10 -15 +25C +85C -55C -20 6 variable gain amplifiers - CHIP GAIN (dB) 10 GHz 20 -25 -30 -30 6 8 10 12 14 FREQUENCY (GHz) 16 18 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6-2 HMC694 v03.1108 GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz Output Return Loss @ Voltage Extreme 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) Return Loss @ Voltage Extreme -10 -15 -2V 0V -20 -25 -2V 0V -20 -30 6 8 10 6 12 14 16 18 6 8 10 FREQUENCY (GHz) 12 14 18 Noise Figure vs. CTRL 22 10 6 GHz 20 NOISE FIGURE (dB) 8 NOISE FIGURE (dB) 16 FREQUENCY (GHz) Noise Figure vs. Temperature 6 4 +25C +85C -55C 2 6 8 18 (6, 8, 10, 12, 14, 17) GHz 16 17 GHz 14 12 10 6 GHz 8 6 4 -1.6 0 10 12 14 16 18 17 GHz -1.4 -1.2 -1 -0.8 -0.6 -0.4 CONTROL VOLTAGE (V) FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 28 28 24 24 20 20 Vctrl = -2V Psat (dBm) P1dB (dBm) Variable gain amplifiers - CHIP -15 -25 -30 16 Vctrl = 0V 12 8 Vctrl = -2V 16 12 Vctrl = 0V 8 +25C +85C -55C 4 +25C +85C -55C 4 0 0 4 6 8 10 12 FREQUENCY (GHz) 6-3 -10 14 16 18 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC694 v03.1108 GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz Reverse Isolation vs. Temperature Output IP3 vs. Temperature 34 30 -10 +25C +85C -55C -20 26 IP3 (dBm) -30 Vctrl = -2V, Pout = 15dBm 22 -40 18 -50 14 Vctrl = 0V, Pout = 8dBm +25C +85C -55C 10 -60 6 8 10 12 14 16 18 4 6 8 10 12 14 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 @ 0 dBm 16 18 6 Output IP3 @ 5 dBm 28 28 26 26 22 22 20 IP3 (dBm) 24 7 GHz 18 12 GHz 16 12 GHz 20 18 7 GHz 16 16 GHz 14 12 -0.8 14 -0.6 -0.4 -0.2 12 -1.2 0 -1 CONTROL VOLTAGE (V) -0.8 -0.6 -0.4 -0.2 0 CONTROL VOLTAGE (V) Output IP3 @ 10 dBm 30 7 GHz 28 26 IP3 (dBm) IP3 (dBm) 16 GHz 24 12 GHz 24 22 20 variable gain amplifiers - CHIP REVERSE ISOLATION (dB) 0 16 GHz 18 16 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 CONTROL VOLTAGE (V) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6-4 HMC694 v03.1108 GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz Typical Supply Current vs. Vdd Absolute Maximum Ratings Drain Bias Voltage (Vdd1, 2, 3) +5.5V Gate Bias Voltage (Vgg1, 2) -3 to 0V +5 170 Gain Control Voltage (Vctrl) -3 to 0V Vgg1,2 (V) Igg Total (mA) 0V to -2V <3 µA Vdd1,2,3 (V) RF Input Power +5 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 10.2 mW/°C above 85 °C) 0.92 W Thermal Resistance (channel to die bottom) 97.6 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Idd Total (mA) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Variable gain amplifiers - CHIP 6 Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 6-5 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC694 v03.1108 GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 ohm. 2-4 Vdd1, 2, 3 Drain Bias Voltage for the amplifier. See assembly diagram for required external components 5 RFOUT This pad is AC coupled and matched to 50 ohm. 6, 8 Vgg1, 2 Gate control for amplifier. Adjust voltage to achieve typical Idd. Please follow “MMIC Amplifier Biasing Procedure” application note. 7 Vctrl Gain control Voltage for the amplifier. See assembly diagram for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 variable gain amplifiers - CHIP Pad Number 6-6 HMC694 v03.1108 GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz Assembly Diagram Variable gain amplifiers - CHIP 6 6-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC694 v03.1108 GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6 - 17 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.254mm (0.010”) Thick MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 6 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] variable gain amplifiers - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 6-8